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    • 2. 发明申请
    • CATHODE PULVERISATION TARGETS IN ALUMINIUM ALLOY
    • 铝合金中的CATHODE PULVERISATION TARGETS
    • WO1998024945A1
    • 1998-06-11
    • PCT/FR1997002142
    • 1997-11-27
    • ALUMINIUM PECHINEYLEROY, MichelMULLER, JeanCHENAL, Bruno
    • ALUMINIUM PECHINEY
    • C23C14/34
    • C23C14/3414C22C21/00
    • The invention concerns a cathode pulverisation target characterised in that its active part, i.e. the volume of the target capable of being removed during the cathode pulverisation, consists of a high purity aluminium alloy simultaneously containing copper and iron and having simultaneously a recrystallisation temperature well above 20 DEG C and an electric resistivity less than 2.85 mu OMEGA .cm at 20 DEG C. The use of the target for making bonding circuits reduces the frequency at which voids and hillocks appear, while maintaining the resistance of the bonding circuits at values comparable to the resistance obtained with a high purity aluminium alloy, while also providing the etching characteristics comparable to those of high purity aluminium alloy.
    • 本发明涉及一种阴极粉碎靶,其特征在于其活性部分,即在阴极粉碎过程中能够除去的靶的体积由同时含有铜和铁的高纯度铝合金组成,同时具有高于20的再结晶温度 ℃,电阻率在20℃时小于2.85微米OMEGA·cm。使用目标物进行接合电路可以降低出现空隙和小丘的频率,同时保持接合电路的电阻值与 由高纯度铝合金获得的电阻,同时还提供与高纯度铝合金相当的蚀刻特性。