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1. 发明申请

WO0203427A3 SEMICONDUCTOR PROCESSING EQUIPMENT HAVING IMPROVED PARTICLE PERFORMANCE 审中-公开
标题翻译：具有改进的粒子性能的半导体处理设备
公开(公告)号：WO0203427A3
公开(公告)日：2002-04-11
申请号：PCT/US0120284
申请日：2001-06-25
申请人： LAM RES CORP , BOSCH WILLIAM FREDERICK
发明人： BOSCH WILLIAM FREDERICK
IPC分类号： C04B41/00 , C04B41/80 , C23C16/44 , H01L21/00 , C23C16/50
CPC分类号： C04B41/009 , C04B41/0054 , C04B41/80 , C23C16/4404 , H01J37/321 , C04B41/53 , C04B35/565 , C04B35/515
摘要： A ceramic part having a surface exposed to the interior space, the surface having been shaped and plasma conditioned to reduce particles thereon by contacting the shaped surface with a high intensity plasma. The ceramic part can be made by sintering or machining a chemically deposited material. During processing of semiconductor substrates, particle contamination can be minimized by the ceramic part as a result of the plasma conditioning treatment. The ceramic part can be made of various materials such as alumina, silicon dioxide, quartz, carbon, silicon, silicon carbide, silicon nitride, boron nitride, boron carbide, aluminum nitride or titanium carbide. The ceramic part can be various parts of a vacuum processing chamber such as a liner within a sidewall of the processing chamber, a gas distribution plate supplying the process gas to the processing chamber, a baffle plate of a showerhead assembly, a wafer passage insert, a focus ring surrounding the substrate, an edge ring surrounding an electrode, a plasma screen and/or a window.
摘要翻译：具有暴露于内部空间的表面的陶瓷部件，该表面已经成形并经等离子体处理以通过使成形表面与高强度等离子体接触来减少其上的颗粒。陶瓷部件可以通过烧结或加工化学沉积的材料制成。在处理半导体衬底期间，由于等离子体调节处理，陶瓷部件可以使颗粒污染最小化。陶瓷部件可以由诸如氧化铝，二氧化硅，石英，碳，硅，碳化硅，氮化硅，氮化硼，碳化硼，氮化铝或碳化钛等各种材料制成。陶瓷部分可以是真空处理室的不同部分，例如处理室侧壁内的衬里，将处理气体供给处理室的气体分配板，喷头组件的挡板，晶片通道插入件，围绕衬底的聚焦环，围绕电极的边缘环，等离子体屏幕和/或窗口。

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