专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2022212295A1 LOW TEMPERATURE DEPOSITION PROCESS 审中-公开
公开(公告)号：WO2022212295A1
公开(公告)日：2022-10-06
申请号：PCT/US2022/022226
申请日：2022-03-28
申请人： ENTEGRIS, INC.
发明人： WANG, Han , HENDRIX, Bryan C.
IPC分类号： H01L21/285 , H01L21/768 , C23C16/34 , C23C16/455 , C23C16/52 , C23C16/45527
摘要： The invention provides a process for the deposition of titanium silicon nitride (TiSiN) films onto a substrate, such as a substrate surface on a microelectronic device. The process comprises: introducing compounds A, B, and C, individually, into a reaction zone under pulsed vapor deposition conditions to provide a pulse sequence, wherein the reaction zone is about 250°C to about 450°C, wherein each compound is optionally followed by a purge step with an inert gas, wherein A is chosen from bis-t-amyl ethylene silylene, SiI2H2, and SiI, B is TiCl4, and C is a nitrogen-containing reducing gas; and repeating the pulse sequence until a desired thickness of the film has been deposited. The process can be run at relatively low temperatures for silicon precursors.

2. 发明申请

WO2018136511A1 COMPOSITIONS AND METHODS FOR REMOVING CERIA PARTICLES FROM A SURFACE 审中-公开
公开(公告)号：WO2018136511A1
公开(公告)日：2018-07-26
申请号：PCT/US2018/014049
申请日：2018-01-17
申请人： ENTEGRIS, INC.
发明人： WHITE, Daniela , PARSON, Thomas , WHITE, Michael , COOPER, Emanuel, I. , DAS, Atanu
IPC分类号： C09G1/00
摘要： A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

3. 发明申请

WO2022236040A1 DEPOSITION PROCESS FOR MOLYBDENUM OR TUNGSTEN MATERIALS 审中-公开
公开(公告)号：WO2022236040A1
公开(公告)日：2022-11-10
申请号：PCT/US2022/028052
申请日：2022-05-06
申请人： ENTEGRIS, INC.
发明人： WRIGHT, Robert L.
IPC分类号： C23C16/06 , C23C16/14 , C23C16/455 , H01L21/285
摘要： Provided is a process for the rapid deposition of highly conformal molybdenum- or tungsten-containing films onto microelectronic device substrates under vapor deposition conditions. In the practice of the invention, a first nucleation step is conducted, while utilizing a generally lower concentration of metal precursor than would ordinarily be utilized in the reaction zone. This utilization of lower metal precursor concentrations can be achieved by way of regulating the temperature of the ampoule (housing the precursor), the concentration of the precursor, pressure in the reaction zone, and the duration of the pulse. In this fashion, a generally lower concentration is utilized to form a nucleation layer of greater than or equal to about 3 Å, or up to about 9, 15, or 25 Å, at which time, the conditions for introducing the precursor are advantageously changed and the concentration of the precursor in the reaction zone is increased for the purpose of bulk deposition.

4. 发明申请

WO2022226174A1 SILICON PRECURSOR COMPOUNDS AND METHOD FOR FORMING SILICON-CONTAINING FILMS 审中-公开
公开(公告)号：WO2022226174A1
公开(公告)日：2022-10-27
申请号：PCT/US2022/025735
申请日：2022-04-21
申请人： ENTEGRIS, INC.
发明人： CHO, Sungsil , KIM, DaHye , KIM, HwanSoo , LEE, SooJin , HENDRIX, Bryan C.
IPC分类号： C23C16/455 , C23C16/40 , H01L21/02
摘要： Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide.

5. 发明申请

WO2022226121A1 LIFT WHEEL LOCK FOR INSTALLING AND/OR REMOVING VAPORIZER VESSELS 审中-公开
公开(公告)号：WO2022226121A1
公开(公告)日：2022-10-27
申请号：PCT/US2022/025641
申请日：2022-04-20
申请人： ENTEGRIS, INC.
发明人： THOMAS, Jacob
IPC分类号： B62B3/06 , B62B5/04 , B66F9/075 , B60B33/02
摘要： A delivery system includes a handheld electric lift configured to lift at least one vaporizer vessel, and a cabinet configured to hold the at least one vaporizer vessel. The lift includes an elongated mast, an effector attached to the mast, a handler configured to move the lift, and at least one caster. The effector is controlled by an electric power source to move along the mast. Each of the at least one caster includes a stopper and a wheel. The stopper is elongated and is disposed above the wheel. The stopper is configured to engage with the wheel to prevent the wheel from swiveling when the stopper is pushed down. The stopper is further configured to disengage with the wheel to allow the wheel to swivel when the stopper is released. The cabinet includes at least one channel configured to accommodate the at least one caster.

6. 发明申请

WO2022164753A1 METAL-ORGANIC-FRAMEWORK-CONTAINING BODIES AND RELATED METHODS 审中-公开
公开(公告)号：WO2022164753A1
公开(公告)日：2022-08-04
申请号：PCT/US2022/013525
申请日：2022-01-24
申请人： ENTEGRIS, INC.
发明人： STURM, Edward A. , BYL, Oleg , LEAVY, Montray , GUDDATI, Subhash , PERUMAL, Thines K.
IPC分类号： B29C64/165 , B33Y10/00 , B33Y70/10 , C08K9/04 , C08K3/08
摘要： Described are three-dimensional structures that contain metal-organic-framework adsorbent material and that are prepared by additive manufacturing techniques, as well as methods of preparing the structures by additive manufacturing methods.

7. 发明申请

WO2018098139A1 CLEANING COMPOSITIONS FOR REMOVING POST ETCH RESIDUE 审中-公开
公开(公告)号：WO2018098139A1
公开(公告)日：2018-05-31
申请号：PCT/US2017/062761
申请日：2017-11-21
申请人： ENTEGRIS, INC.
发明人： PAYNE, Makonnen , COOPER, Emanuel , KIM, WonLae , HONG, Eric , KIM, Sean
IPC分类号： C11D7/32 , C11D3/00 , C11D7/36 , C11D11/00 , G03F7/42
摘要： The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.

8. 发明申请

WO2017210518A1 VAPOR PHASE ETCHING OF HAFNIA AND ZIRCONIA 审中-公开
标题翻译： HAFNIA和ZIRCONIA的汽相蚀刻
公开(公告)号：WO2017210518A1
公开(公告)日：2017-12-07
申请号：PCT/US2017/035613
申请日：2017-06-02
申请人： ENTEGRIS, INC.
发明人： HENDRIX, Bryan
IPC分类号： H01L21/311
摘要： A method is described for vapor phase etching of oxide material including at least one of hafhia (HfO 2 ) and zirconia (ZrO 2 ), in the absence of plasma exposure of the oxide material. The method involves contacting the oxide material with an etching medium including at least one of phosphorus chloride and tungsten chloride under conditions producing a removable fluid reaction product, and removing the removable fluid reaction product. The etching process may be controllably carried out by use of pressure swings, temperature swings, and/or modulation of partial pressure of Hf or Zr chloride in the reaction, e.g., to achieve precision etch removal in the manufacture of semiconductor devices such as 3D NAND, sub-20 nm DRAMs, and finFETs.
摘要翻译：描述了一种用于对包括hafhia（HfO 2）和氧化锆（ZrO 2）中的至少一种的氧化物材料进行气相蚀刻的方法，在没有氧化物材料的等离子体暴露的情况下。该方法包括在产生可除去的流体反应产物的条件下使氧化物材料与包括氯化磷和氯化钨中的至少一种的蚀刻介质接触，并除去可除去的流体反应产物。可以通过使用压力摆动，温度摆动和/或反应中Hf或Zr氯化物的分压的调节来可控地执行蚀刻工艺，例如以在制造诸如3DNAND的半导体器件中实现精确蚀刻去除，20纳米以下的DRAM和finFET。

9. 发明申请

WO2022266421A1 PROCESS FOR PREPARING ORGANOTIN COMPOUNDS 审中-公开
公开(公告)号：WO2022266421A1
公开(公告)日：2022-12-22
申请号：PCT/US2022/033954
申请日：2022-06-17
申请人： ENTEGRIS, INC. , CAMERON, Thomas M.
发明人： ERMERT, David M.
IPC分类号： C07F7/22
摘要： The invention provides a facile process for preparing certain organotin compounds having alkyl and aryl substituents. These compounds are useful as intermediates in the synthesis of certain alkylamino- and alkoxy-substituted alkyl tin compounds, which are in turn useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

10. 发明申请

WO2022266138A1 GRINDING OF HARD SUBSTRATES 审中-公开
公开(公告)号：WO2022266138A1
公开(公告)日：2022-12-22
申请号：PCT/US2022/033485
申请日：2022-06-14
申请人： ENTEGRIS, INC.
发明人： SINGH, Rajiv K. , DE, Sunny
IPC分类号： C09G1/02 , C09K3/14 , B24B37/00 , H01L21/306
摘要： The invention provides improved slurries for the polishing of hard materials such as those having a Mohs hardness of greater than about 6. Exemplary hard surfaces include sapphire, silicon carbide, silicon nitride, and gallium nitride, and diamond. In the compositions and method of the invention, novel compositions comprising a unique combination of additives which surprisingly were found to uniformly disperse diamond particles having a wide range of particle size in a slurry. In the method of the invention, the generally alkaline slurry compositions of the invention are capable of utilizing diamond particle sizes of greater than 40 microns while effecting good removal rates. In such cases, when utilized with a suitable pad, rapid and planar grinding of silicon carbide, silicon nitride, sapphire, gallium nitride, and diamond is possible, with uniform surface damage.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式