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71. 发明申请

WO2004102648A3 REACTOR SURFACE PASSIVATION THROUGH CHEMICAL DEACTIVATION 审中-公开
标题翻译：通过化学灭活反应器表面被钝化
公开(公告)号：WO2004102648A3
公开(公告)日：2005-03-24
申请号：PCT/US2004013166
申请日：2004-04-29
申请人： ASM INC , VERGHESE MOHITH , SHERO ERIC J
发明人： VERGHESE MOHITH , SHERO ERIC J
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C22/68 , C30B25/14 , H01L21/285 , C30B25/00
CPC分类号： B82Y30/00 , C23C16/403 , C23C16/4404 , C23C16/45525 , C23C22/68 , C30B25/14 , H01J37/32477
摘要： Protective layers (208) are formed on a surface (201) of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor (100). Parts defining a reaction space (200) for an ALD or CVD reactor (100) can be treated, in situ or ex situ, with chemicals (206) that deactivate reactive sites (210) on the reaction space surface(s) (201). A pre-treatment step (502) can maximize the available reactive sites (210) prior to the treatment step (504). With reactive sites (210) deactivated by adsorbed treatment reactant (208), during subsequent processing the reactant gases (214) have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps (310, 314) can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.
摘要翻译：在原子层沉积（ALD）或化学气相沉积（CVD）反应器（100）的表面（201）上形成保护层（208）。可以在原位或非原位处理限定用于ALD或CVD反应器（100）的反应空间（200）的部件与使反应空间表面（201）上的反应位点（210）失活的化学物质（206）。预处理步骤（502）可以在处理步骤（504）之前使可用的反应位点（210）最大化。通过吸附处理反应物（208）使活性位点（210）失活，在随后的处理过程中，反应气体（214）在这些处理过的表面上具有降低的反应性或沉积。因此，清洗步骤（310,314）可以大大缩短，并且可以在清洁步骤之间进行更多次的运行，以消除反应器壁上的堆积沉积物。

72. 发明申请

WO2004061896A3 METHOD AND APPARATUS FOR PRODUCING MONOCRYSTALLINE AIN 审中-公开
标题翻译：用于生产单晶AIN的方法和装置
公开(公告)号：WO2004061896A3
公开(公告)日：2004-09-10
申请号：PCT/US0314579
申请日：2003-05-07
申请人： CRYSTAL IS INC
发明人： SCHOWALTER LEO J , SLACK GLEN A , ROJO J CARLOS
IPC分类号： C30B11/00 , C30B23/00 , C30B25/00 , C30B35/00
CPC分类号： C30B23/00 , C30B11/003 , C30B29/403 , Y10T117/10
摘要： A method and apparatus for producing bulk single crystals (7) of AIN includes a crystal growth enclosure (9) with Al and N2 source (11) material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure (9), while maintaining the total vapor pressure in the crystal growth enclosure (9) at super-atmospheric pressure. At least one nucleation site (19) is provided in the crystal growth enclosure (9), and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure (9). The Al and N2 vapor is then deposited to grow single crystalline AIN (7) at the nucleation site (19).
摘要翻译：用于制造AIN的本体单晶（7）的方法和装置包括其中具有Al和N2源（11）材料的晶体生长封壳（9），其能够形成本体晶体。该装置相对于晶体生长壳体（9）内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长壳体（9）中的总蒸气压。在晶体生长封壳（9）中提供至少一个成核位点（19），并且提供用于相对于晶体生长封壳（9）中的其它位置冷却成核位置。然后沉积Al和N 2蒸气以在成核位点（19）处生长单晶AIN（7）。

73. 发明申请

WO03069027A2 ENERGY EFFICIENT METHOD FOR GROWING POLYCRYSTALLINE SILICON 审中-公开
标题翻译：生长多晶硅的能效法
公开(公告)号：WO03069027A2
公开(公告)日：2003-08-21
申请号：PCT/US0304360
申请日：2003-02-13
申请人： ADVANCED SILICON MATERIALS LLC , WINTERTON LYLE C , HILL JOHN PETER
发明人： WINTERTON LYLE C , HILL JOHN PETER
IPC分类号： C01B33/029 , C01B33/03 , C01B33/035 , C30B25/00 , C30B
CPC分类号： C01B33/035 , C30B25/005 , C30B29/06
摘要： Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites (120) develop due to the deposition of silicon from silicon-containing molecules in the surrounding reactor atmosphere. Thereafter, the surface temperature is gradually reduced so that silicon that deposits on the needle-like (120) dendrites causes the dendrites to grow and assume a generally flared shape.
摘要翻译：多晶硅枝晶通过在多晶硅棒或其他衬底上沉积硅来生长。由于从周围反应器气氛中的含硅分子中沉积硅，表面温度升高到针状枝晶（120）发展的温度。之后，表面温度逐渐降低，从而沉积在针状（120）枝晶上的硅引起枝晶生长并呈大体喇叭状。

74. 发明申请

WO02086451A3 ORGANOBORON ROUTE AND PROCESS FOR PREPARATION OF BORON NITRIDE 审中-公开
标题翻译： ORGANOBORON路线和制备硝酸硼的方法
公开(公告)号：WO02086451A3
公开(公告)日：2002-12-27
申请号：PCT/US0213082
申请日：2002-04-24
申请人： UNIV NEW MEXICO , PAINE ROBERT T , KROENKE WILLIAM J , PRUSS EUGENE A , WOOD GARY L , JANIK JERZY F
发明人： PAINE ROBERT T , KROENKE WILLIAM J , PRUSS EUGENE A , WOOD GARY L , JANIK JERZY F
IPC分类号： C01B21/064 , C01B21/082 , C04B41/50 , C04B41/87 , C30B25/00 , C01B3/10
CPC分类号： C30B25/005 , B82Y30/00 , C01B21/0646 , C01B21/0828 , C01P2002/01 , C01P2002/76 , C01P2004/03 , C01P2004/04 , C01P2004/10 , C01P2004/22 , C01P2004/32 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2006/80 , C04B41/009 , C04B41/5064 , C04B41/87 , C30B29/10 , C30B29/403 , C04B41/0072 , C04B41/4519 , C04B41/4545 , C04B35/04 , C04B35/10 , C04B35/48
摘要： An organoboron route and process for preparation of boron nitride utilizing aerosol assited vapor phase synthesis (AAVS) wherein organoboron precursors are nitrided in one or two heating steps, and wherein a boron oxide nitride intermediary composition is formed after the first heating step and may be further nitrided to form resultant sphroidal boron nitride powders including spheroidal particles that are smooth, bladed, have protruding whiskers, and are of turbostratic or hexagonal crystalline structure. The aerosol assisted vapor phase reactor system (AAVS) 10 comprises aerosol generator assembly 12, inert carrier gas source 14, nitriding source 16, connection systems 18, 18,'18," furnance 20, preferably, collection device 41.
摘要翻译：一种利用气溶胶气相合成（AAVS）制备氮化硼的有机硼路线和方法，其中有机硼前体在一个或两个加热步骤中被氮化，并且其中在第一加热步骤之后形成氧化硼氮化物中间体组合物，并且可以进一步氮化以形成所得的球形氮化硼粉末，其包括平滑，叶片的球形颗粒，具有突出的晶须，并且具有涡流或六方晶结构。气溶胶辅助气相反应器系统（AAVS）10包括气溶胶发生器组件12，惰性载气源14，氮化源16，连接系统18,18'，18，优选地为收集装置41的炉20。

75. 发明申请

WO0217362A8 DOPED ELONGATED SEMICONDUCTORS, GROWING SUCH SEMICONDUCTORS, DEVICES INCLUDING SUCH SEMICONDUCTORS AND FABRICATING SUCH DEVICES 审中-公开
标题翻译：掺杂的半导体，生长这样的半导体，包括这样的半导体和器件
公开(公告)号：WO0217362A8
公开(公告)日：2002-11-21
申请号：PCT/US0126298
申请日：2001-08-22
申请人： HARVARD COLLEGE , LIEBER CHARLES M , CUI YING , DUAN XIANGFENG , HUANG YUNG-SHENG
发明人： LIEBER CHARLES M , CUI YING , DUAN XIANGFENG , HUANG YUNG-SHENG
IPC分类号： H01L29/73 , C30B11/00 , C30B25/00 , G01N27/12 , G01N27/414 , G01N33/543 , G11C13/02 , H01L21/329 , H01L21/331 , H01L23/532 , H01L27/10 , H01L29/06 , H01L29/207 , H01L29/267 , H01L29/88 , H01L33/06 , H01L33/18 , H01L51/00 , H01L51/30 , H01L21/00 , C30B25/02
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A method comprises providing a population of catalyst particles and growing a population of semiconductor nanowires catalytically from the population of catalyst particles. The nanowires of the population have a variation in diameter of less than about 20%, and the nanowires of the population have a smallest width less than 500 nanometers. Preferably the nanowires of the population have a variation in diameter of less than about 10%.

76. 发明申请

WO0033388A9 METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES 审中-公开
标题翻译：生产器件质量（Al）InGaP合金的方法在厚度不匹配的衬底上
公开(公告)号：WO0033388A9
公开(公告)日：2001-03-29
申请号：PCT/US9928044
申请日：1999-11-24
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： KIM ANDREW Y , FITZGERALD EUGENE A
IPC分类号： C30B23/00 , C30B25/00 , C30B25/02 , C30B25/06 , C30B28/12 , C30B28/14 , C30B29/40 , H01L21/20 , H01L21/205 , H01L31/18 , H01L33/00 , H01L33/30 , H01S5/323
CPC分类号： H01L21/02392 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02461 , H01L21/02505 , H01L21/0251 , H01L21/02543 , H01L21/02576 , H01L21/0262 , H01L31/1844 , H01L33/0062 , H01L33/0066 , H01L33/30 , Y02E10/544
摘要： A method of forming a semiconductor structure including providing a single crystal semiconductor substrate of GaP, and fabricating a graded composition buffer including a plurality of epitaxial semiconductor Inx(AlyGa1-y)1-xP alloy layers. The buffer includes a first alloy layer immediately contacting the substrate having a lattice constant that is nearly identical to that of the substrate, subsequent alloy layers having lattice constants that differ from adjacent layers by less than 1 %, and a final alloy layer having a lattice constant that is substantially different from the substrate. The growth temperature of the final alloy layer is at least 20 DEG C less than the growth temperature of the first alloy layer.
摘要翻译：一种形成半导体结构的方法，包括提供GaP的单晶半导体衬底，以及制造包括多个外延半导体In x（Al y Ga 1-y）1-xP合金层的渐变组合物缓冲层。缓冲器包括立即接触基板的第一合金层，其具有与基板的晶格常数几乎相同的晶格常数，随后的合金层具有不同于相邻层的晶格常数小于1％，以及具有晶格的最终合金层基本上不同于基底的常数。最终合金层的生长温度比第一合金层的生长温度低至少20℃。

77. 发明申请

WO01009412A1 MATERIAL FOR RAISING SINGLE CRYSTAL SIC AND METHOD OF PREPARING SINGLE CRYSTAL SIC 审中-公开
标题翻译：提高单晶SIC材料及制备单晶SIC的方法
公开(公告)号：WO01009412A1
公开(公告)日：2001-02-08
申请号：PCT/JP1999/004097
申请日：1999-07-30
IPC分类号： C30B23/00 , C30B23/02 , C30B25/00 , C30B25/02 , C30B29/36
CPC分类号： C30B25/00 , C30B23/00 , C30B23/02 , C30B25/02 , C30B29/36
摘要： A method for preparing a single crystal SiC which comprises providing a closely laminated composite (M or M') comprising a base material (1) of a single crystal alpha -SiC, a polycrystalline plate (3) prepared by thermal chemical deposition into a plate form and an intermediate layer (4 or 4') composed of a material containing Si and O as basic components, such as a silicone rubber, which is caused to be present between (1) and (2), and subjecting the composite to a heat treatment at a temperature of 2200 DEG C or higher and under the saturated vapour pressure of SiC, thereby transforming the polycrystal of the polycrystalline plate (3) to the same direction as that of the single crystal of the base single crystal alpha -SiC material (1) and raising a combined single crystal. This method not only prevents the occurrence of crystal defect or strain, but also allows an easy and efficient preparation of a high quality single crystal alpha -SiC which is almost free from the occurrence of micropipe defect.
摘要翻译：一种制备单晶SiC的方法，其包括提供包括单晶α-SiC的基材（1），通过热化学沉积制备的多晶板（3）的紧密层压的复合材料（M或M'）到板形式和由含有Si和O作为基本组分的材料（例如硅橡胶）组成的中间层（4或4'），其被存在于（1）和（2）之间，并将复合材料在2200℃以上的温度下在SiC的饱和蒸气压下进行热处理，将多晶板（3）的多晶体转变为与单晶α-SiC材料的单晶相同的方向（1）并提高组合的单晶。这种方法不仅可以防止晶体缺陷或应变的发生，而且可以方便而有效地制备高质量的单晶α-SiC，其几乎不会发生微孔缺陷。

78. 发明申请

WO00063466A1 COMPOUND GAS INJECTION SYSTEM AND METHODS 审中-公开
标题翻译：化合物注射系统和方法
公开(公告)号：WO00063466A1
公开(公告)日：2000-10-26
申请号：PCT/US2000/010151
申请日：2000-04-13
IPC分类号： C30B29/38 , C23C16/30 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , C30B23/00 , C23C16/00 , C30B25/00 , C30B28/12 , C30B28/14 , H01L21/311
CPC分类号： C23C16/45519 , C23C16/303 , C23C16/4405 , C23C16/45576 , C30B25/02 , C30B25/14 , C30B29/403 , C30B29/406
摘要： A reaction assembly (30) of a vapor-phase deposition system (10) includes a reaction chamber (38) leading to a gullet outlet (34b), and a sheath (36) leading to a sheath outlet (32b). The gullet outlet (34b) and the sheath outlet (32b) at the distal end (30b) of the reaction assembly (30), the distal end (30b) including a compound nozzle (33). The reaction assembly (30) generates a compound gas stream (42) for projection from the compound nozzle (33) towards a target substrate (14). The compound gas stream (42) includes a reagent gas stream (44) and a sheath gas stream (46), wherein the sheath gas stream (46) at least partially envelopes the reagent gas stream (44). Methods for generating and delivering a compound gas stream (42), and for performing vapor-phase deposition, are also disclosed.
摘要翻译：气相沉积系统（10）的反应组件（30）包括通向齿槽出口（34b）的反应室（38）和通向护套出口（32b）的护套（36）。在反应组件（30）的远端（30b）处的齿槽出口（34b）和鞘出口（32b），远端（30b）包括复合喷嘴（33）。反应组件（30）产生用于从复合喷嘴（33）向目标衬底（14）突出的复合气流（42）。复合气流（42）包括反应气流（44）和鞘气流（46），其中鞘气流（46）至少部分地包围反应气流（44）。还公开了用于产生和输送复合气流（42）并进行气相沉积的方法。

79. 发明申请

WO0022195A2 PRODUCTION OF BULK SINGLE CRYSTALS OF SILICON CARBIDE 审中-公开
标题翻译：生产碳化硅散装单晶
公开(公告)号：WO0022195A2
公开(公告)日：2000-04-20
申请号：PCT/US9923547
申请日：1999-10-08
申请人： CREE INC , HUNTER CHARLES ERIC
发明人： HUNTER CHARLES ERIC
IPC分类号： C30B29/36 , C30B23/00 , C30B25/00 , C30B
CPC分类号： C30B23/00 , C30B25/00 , C30B29/36
摘要： Bulk, low impurity silicon carbide single crystals are grown by deposition of vapor species containing silicon and vapor species containing carbon on a crystal growth interface. The silicon source vapor is provided by vaporizing liquid silicon and transporting the silicon vapor to a crystal growth crucible. The carbon vapor species are provided by either a carbon containing source gas (for example, CN) or by flowing the silicon source vapor over or through a solid carbon source, for example flowing the silicon vapor through porous graphite or a bed of graphite particles.
摘要翻译：通过在晶体生长界面上沉积含有硅和含碳的蒸汽物质的蒸汽物种来生长块状，低杂质碳化硅单晶。通过汽化液体硅并将硅蒸汽输送到晶体生长坩埚来提供硅源蒸汽。通过含碳源气体（例如CN）或通过使硅源蒸汽流过或穿过固体碳源（例如使硅蒸气流过多孔石墨或石墨颗粒床）来提供碳蒸气物质。

80. 发明申请

WO2022013111A1 SINGLE CRYSTAL METAL LAYERS, METHODS OF PRODUCTION AND USES THEREOF 审中-公开
公开(公告)号：WO2022013111A1
公开(公告)日：2022-01-20
申请号：PCT/EP2021/069223
申请日：2021-07-09
申请人： CAMBRIDGE ENTERPRISE LIMITED
发明人： BURTON, Oliver J. , HOFMANN, Stephan
IPC分类号： C30B23/02 , C30B25/00 , C30B29/02
摘要： The present invention relates to a method for production of a single crystal metal layer, to single crystal metal layers produced according to the method, to use of said single crystal metal layers as catalyst layers in a 2D material growth process, and to 2D material layers grown via such a process. The method comprises steps of: providing a metal source material, providing a single crystal deposition substrate having a selected crystallographic orientation, arranging these in a closely-spaced relationship, and heating the metal source material and deposition substrate under vacuum to cause sublimation of the metal source material and heteroepitaxial deposition of sublimed metal atoms onto the deposition substrate, to thereby form a single crystal metal layer on the deposition substrate. Single crystal metal layers produced according to this method are found to be of high quality, in particular with respect to surface roughness and defect density of the layer.

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