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71. 发明申请

WO2002086947A2 A METHOD FOR MAKING A METAL-INSULATOR-METAL CAPACITOR USING PLATE-THROUGH MASK TECHNIQUES 审中-公开
标题翻译：使用板穿透掩模技术制造金属绝缘体金属电容器的方法
公开(公告)号：WO2002086947A2
公开(公告)日：2002-10-31
申请号：PCT/US2002/010893
申请日：2002-04-08
申请人： INFINEON TECHNOLOGIES NORTH AMERICA CORP. , INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： WONG, Kwong, H. , NING, Xian, J.
IPC分类号： H01L
CPC分类号： H01L28/60 , H01L21/3212 , H01L21/76838 , H01L28/75
摘要： A method for making a metal-insulator-metal capacitive structure includes depositing a copper barrier and seed layer over a support structure such as an inter-level dielectric layer, forming a dielectric over the copper barrier and seed layer, and then forming a forming a metal layer over the dielectric. The copper barrier and seed layer forms a bottom plate of a capacitor, and the metal layer forms the upper plate which is separated from the bottom plate by the dielectric. By forming the bottom plate from a copper barrier and seed layer, reduced sheet resistance and surface roughness is achieved, both of which enhance the performance of the capacitor. This performance is further enhanced by forming the capacitor to have a damascene structure. Preferably, at least one conductive interconnect is formed simultaneously with the formation of the capacitor. This is made possible, at least in part, by forming the interconnect using a plate-through mask technique. The interconnect and capacitor are then finished using one and only one planarizing (e.g., CMP) step. The result is to form a capacitor and interconnect structure in far fewer steps than conventionally required, which translates into improved cost and efficiency.
摘要翻译：制造金属 - 绝缘体 - 金属电容结构的方法包括在诸如层间电介质层的支撑结构上沉积铜屏障和种子层，在铜屏障和籽晶层上形成电介质，然后形成电介质上的金属层。铜屏障和种子层形成电容器的底板，并且金属层形成通过电介质与底板分离的上板。通过从铜屏障和种子层形成底板，实现了降低的薄层电阻和表面粗糙度，这两者都增强了电容器的性能。通过形成具有镶嵌结构的电容器来进一步增强该性能。优选地，与电容器的形成同时形成至少一个导电互连。至少部分地通过使用平板穿透技术形成互连来实现这一点。然后使用一个且仅一个平面化（例如CMP）步骤来完成互连和电容器。其结果是形成电容器和互连结构，其步骤远低于常规要求，这转化为成本和效率的提高。

72. 发明申请

WO2002047159A3 DRAM WITH VERTICAL TRANSISTOR AND TRENCH CAPACITOR MEMORY CELLS AND METHOD OF FABRICATION 审中-公开
公开(公告)号：WO2002047159A3
公开(公告)日：2002-06-13
申请号：PCT/US2001/043959
申请日：2001-11-14
申请人： INFINEON TECHNOLOGIES NORTH AMERICA CORP.
发明人： JAIPRAKASH, V., C. , SEITZ, Michel , ARNOLD, Norbert
IPC分类号： H01L21/8242
摘要： A semiconductor Dynamic Random Access Memory (DRAM) cell is fabricated using a vertical access transistor and a storage capacitor formed in a vertical trench. A Shallow Trench Isolation (STI) region (480) is used as a masking region to confine the channel region of the access transistor, the first and second (433-1) output regions of the access transistor, and a strap region (448-1) connecting the second output region to the storage capacitor (440-1) , to a narrow portion of the trench. The so confined second output region of the access transistor has reduced leakage to similar second output regions of adjacent memory cells. Adjacent memory cells can then be placed closer to one another without an increase in leakage and cross-talk between adjacent memory cells.

73. 发明申请

WO2002027934A3 LEVEL-SHIFTING CIRCUITRY HAVING "HIGH" OUTPUT DURING DISABLE MODE 审中-公开
公开(公告)号：WO2002027934A3
公开(公告)日：2002-04-04
申请号：PCT/US2001/029191
申请日：2001-09-19
申请人： INFINEON TECHNOLOGIES NORTH AMERICA CORP.
发明人： TERLETZKI, Hartmud
IPC分类号： H03K19/0185
摘要： Level-shifting circuitry having a level-shifting section and an enable/disable section. The level-shifting section is responsive to an input logic signal. The input logic signal has a first voltage level representative of a first logic state and a second voltage level representative of a second logic state. The level-shifting section provides an output logic signal, such output logic signal having a third voltage level representative of the first logic state of the input logic signal. The enable/disable section is responsive to an enable/disable signal for driving the output logic signal to the third voltage level during a disable mode, such third voltage level being greater than the first or second voltage levels.

74. 发明申请

WO2001099161A3 METHOD OF REDUCING POST-DEVELOPMENT DEFECTS IN AND AROUND OPENINGS FORMED IN PHOTORESIST BY USE OF MULTIPLE DEVELOPMENT/RINSE CYCLES 审中-公开
公开(公告)号：WO2001099161A3
公开(公告)日：2001-12-27
申请号：PCT/US2001/019815
申请日：2001-06-21
申请人： INFINEON TECHNOLOGIES NORTH AMERICA CORP. , INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： LU, Zhijian , THOMAS, Alan , GUTMANN, Alois , CHEN, Kuang, Jung , LAWSON, Margaret
IPC分类号： G03F7/30
摘要： In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable remnants (denoted as Blob Defects) of various components of photoresist material remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of using a Puddle Development technique to develop the photoresist material, and subsequently exposing the semiconductor wafer to at least one Puddle Rinse cycle which uses water.

75. 发明申请

WO2001099158A3 COLLAR FORMATION BY SELECTIVE OXIDE DEPOSITION 审中-公开
公开(公告)号：WO2001099158A3
公开(公告)日：2001-12-27
申请号：PCT/US2001/019578
申请日：2001-06-19
申请人： INFINEON TECHNOLOGIES NORTH AMERICA CORP.
发明人： BEINTNER, Jochen , MICHAELIS, Alexander , GRUENING, Ulrike , SPINDLER, Oswald , GABRIC, Zvonimir
IPC分类号： H01L21/8242
摘要： A method for forming an oxide collar in a trench, in accordance with the present invention, includes forming a trench (104) in a silicon substrate (102), and depositing and recessing a nitride liner (112) in the trench to expose a portion of the silicon substrate on sidewalls of the trench. An oxide (116) is deposited selective to the nitride liner on the portion of the silicon substrate. Residue oxide is removed from surfaces of the nitride liner to form a collar (116) in the trench.

76. 发明申请

WO2001026158A3 CENTER STORAGE NODE FOR DRAM TRENCH CAPACITORS 审中-公开
公开(公告)号：WO2001026158A3
公开(公告)日：2001-04-12
申请号：PCT/US2000/027218
申请日：2000-10-02
申请人： INFINEON TECHNOLOGIES NORTH AMERICA CORP.
发明人： ZIMMERMANN, Ulrich , ACHAMMER, Thomas
IPC分类号： H01L27/108
摘要： A trench capacitor cell (100), in accordance with the present invention, includes a trench having an outer electrode (110) formed in a substrate adjacent to the trench. A storage node (108) is formed in the trench and capacitively coupled to the outer electrode. A center node (112) is capacitively coupled to the storage node, and the storage node surrounds the center node within the trench. The center node includes a portion extending from the trench for connecting to a potential (P) to provide charge retention in the storage node during operation.

77. 发明申请

WO2013052868A1 APPARATUS AND METHODS FOR REDUCING PAGE LOSS IN MULTIPLE SUBSCRIPTION, MULTIPLE RADIO ACCESS TECHNOLOGY DEVICES 审中-公开
标题翻译：用于减少多次订阅，多个无线接入技术设备中的页面丢失的装置和方法
公开(公告)号：WO2013052868A1
公开(公告)日：2013-04-11
申请号：PCT/US2012/059060
申请日：2012-10-05
申请人： QUALCOMM INCORPORATED
发明人： KRISHNAMOORTHY, Sathish , SANKA, Suresh , GUPTA, Ajit , BERA, Asimava , NAYAK, Shivank , PATTANAYAK, Uttam
IPC分类号： H04W48/20 , H04W68/00
CPC分类号： H04W68/02 , H04W48/20 , H04W88/06
摘要： Disclosed are methods and apparatus for reducing page loss in a multiple subscription, multiple radio access wireless device, such as a dual SIM wireless device. The disclosed methodology and apparatus determine whether a conflict will arise between paging channel information received from at least two or more subscriptions from two or more radio access networks using a single receiver in the wireless device. The reception for paging channel information via the wireless receiver is switched to receive the paging channel information from a neighboring cell for one of the two subscriptions when a conflict is determined. By switching reception of paging channel information to another neighboring cell, the likelihood of page collisions between two subscriptions is reduced.
摘要翻译：公开了用于减少多订阅多无线电接入无线设备（诸如双SIM无线设备）中的页面丢失的方法和装置。所公开的方法和装置确定在使用无线设备中的单个接收机的来自两个或更多个无线电接入网络的至少两个或更多个预订接收的寻呼信道信息之间是否会出现冲突。当确定冲突时，切换经由无线接收器的寻呼信道信息的接收，以从两个订阅中的一个接收来自相邻小区的寻呼信道信息。通过将寻呼信道信息的接收切换到另一个相邻小区，减少了两个订阅之间的页面冲突的可能性。

78. 发明申请

WO2012109271A1 METHOD AND APPARATUS FOR SYSTEM LEVEL SOLUTION FOR DIFFERENT SERVICE CO -EXISTENCE 审中-公开
标题翻译：用于系统级解决方案的方法和装置，用于不同的服务共存
公开(公告)号：WO2012109271A1
公开(公告)日：2012-08-16
申请号：PCT/US2012/024179
申请日：2012-02-07
申请人： QUALCOMM Incorporated , FRANKLAND, Stephen
发明人： FRANKLAND, Stephen
IPC分类号： H04W72/12
CPC分类号： H04W72/1215 , H04L65/1083 , H04L67/148 , H04W36/0016 , H04W36/0022 , H04W36/14 , H04W36/18 , H04W36/20 , H04W76/15 , H04W76/28
摘要： An apparatus and method for implementing a system solution for co-existence between a first service and a second service including accepting a first service selection for a first wireless system on a mobile terminal; performing a data transport using the first service selection on the mobile terminal; accepting a second service selection for a second wireless system on the mobile terminal; implementing a suspension of the data transport using the first service selection on the mobile terminal; and redirecting the data transport using a different wireless system.
摘要翻译：一种用于实现用于第一服务和第二服务之间共存的系统解决方案的装置和方法，包括接受移动终端上的第一无线系统的第一服务选择; 使用所述移动终端上的所述第一服务选择来执行数据传输; 接受所述移动终端上的第二无线系统的第二服务选择; 使用移动终端上的第一服务选择实现数据传输的暂停; 并使用不同的无线系统重定向数据传输。

79. 发明申请

WO2011066296A1 APPARATUS AND METHOD FOR COMPRESSIVE SENSING TAP IDENTIFICATION FOR CHANNEL ESTIMATION 审中-公开
标题翻译：用于信道估计的压缩感测标签识别的装置和方法
公开(公告)号：WO2011066296A1
公开(公告)日：2011-06-03
申请号：PCT/US2010/057827
申请日：2010-11-23
申请人： QUALCOMM INCORPORATED , ABRISHAMKAR, Farrokh , SHENTAL, Ori , WANG, Ni-Chun , YU, Yingqun
发明人： ABRISHAMKAR, Farrokh , SHENTAL, Ori , WANG, Ni-Chun , YU, Yingqun
IPC分类号： H04L25/02
CPC分类号： H04L25/0242 , H04L5/0048 , H04L25/0234 , H04L27/2607
摘要： An apparatus and method for compressive sensing tap identification for channel estimation comprising identifying a set of significant taps in the time domain; representing a time-flat channel response using a Taylor series expansion with the set of significant taps; converting the time-flat channel response to a vectorized channel response; transforming the vectorized channel response to a compressive sensing (CS) polynomial frequency response; aggregating the CS polynomial frequency response into a stacked frequency response; converting the stacked frequency response into a measured pilot frequency response; estimating a channel parameter vector based on the measured pilot frequency response; and generating a reconstructed channel response from the channel parameter vector.
摘要翻译：一种用于信道估计的压缩感测抽头识别的装置和方法，包括在时域中识别一组重要抽头; 代表使用具有该组重要抽头的泰勒级数展开的时间平坦的信道响应; 将时间平坦的信道响应转换为矢量化信道响应; 将矢量化信道响应变换为压缩感知（CS）多项式频率响应; 将CS多项式频率响应聚合成堆叠频率响应; 将堆叠的频率响应转换成测量的导频响应; 基于所测量的导频频率响应估计信道参数向量; 以及从所述信道参数向量生成重建的信道响应。

80. 发明申请

WO2011066271A1 APPARATUS AND METHOD FOR CHANNEL ESTIMATION USING COMPRESSIVE SENSING 审中-公开
标题翻译：使用压缩感测的信道估计的装置和方法
公开(公告)号：WO2011066271A1
公开(公告)日：2011-06-03
申请号：PCT/US2010/057775
申请日：2010-11-23
申请人： QUALCOMM INCORPORATED , ABRISHAMKAR, Farrokh , SHENTAL, Ori , WANG, Ni-Chun , YU, Yingqun
发明人： ABRISHAMKAR, Farrokh , SHENTAL, Ori , WANG, Ni-Chun , YU, Yingqun
IPC分类号： H04L25/02
CPC分类号： H04L25/0234 , H04L5/0048 , H04L25/0242 , H04L27/2607
摘要： An apparatus and method for channel estimation comprising obtaining a response matrix G(I) using Q quantity pilots; constructing a sensing matrix W sensing based on K quantity tones, L quantity symbols and P quantity multipaths; and using compressive sensing channel estimation to determine an equivalent channel matrix G p (i) based on the response matrix G(I) and the sensing matrix W sensing .
摘要翻译：一种用于信道估计的装置和方法，包括使用Q量导频获得响应矩阵G（I）基于K数量音，L量符号和P量多径构建感测矩阵Wsensing; 并且使用压缩感测信道估计来基于响应矩阵G（I）和感测矩阵Wsensing来确定等效信道矩阵Gp（i）。

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