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71. 发明申请

WO2005122223A1 PRODUCTION METHOD OF COMPOUND SEMICONDUCTOR DEVICE WAFER 审中-公开
标题翻译：复合半导体器件的生产方法
公开(公告)号：WO2005122223A1
公开(公告)日：2005-12-22
申请号：PCT/JP2005/010904
申请日：2005-06-08
申请人： SHOWA DENKO K.K. , KUSUNOKI, Katsuki
发明人： KUSUNOKI, Katsuki
IPC分类号： H01L21/301
CPC分类号： H01L33/0095 , B23K26/364
摘要： An object of the present invention is to provide a method for producing a compound semiconductor device wafer, which method enables cleaving of a wafer with precision and at remarkably high yield, attains high process speed, and improves productivity. The inventive method for producing a compound semiconductor device wafer, the wafer including a substrate and a plurality of compound semiconductor devices provided on the substrate and arranged with separation zones being disposed between the compound semiconductor devices, comprises a step of forming separation grooves, through laser processing, on the top surface of the substrate (i.e., surface on the compound semiconductor side) at the separation zones under the condition that a compound semiconductor layer is present on the top surface of the substrate.
摘要翻译：本发明的目的是提供一种化合物半导体器件晶片的制造方法，该方法能够精确地并且以高产率切割晶片，达到高处理速度，并提高生产率。本发明的化合物半导体器件晶片的制造方法，包括基板的晶片和设置在基板上并配置有分离区域的多个化合物半导体器件，配置在化合物半导体器件之间，包括通过激光器形成分离槽的步骤在化合物半导体层存在于基板的顶面的条件下，在分离区的基板的顶面（即，化合物半导体侧的表面）上进行加工。

72. 发明申请

WO2005120176A2 MAGNETIC RECORDING MEDIUM, METHOD FOR PRODUCTION THEREOF AND MAGNETIC RECORDING AND REPRODUCING DEVICE USING THE MEDIUM 审中-公开
标题翻译：磁记录介质，其制造方法和磁记录和使用介质的再现装置
公开(公告)号：WO2005120176A2
公开(公告)日：2005-12-22
申请号：PCT/JP2005/010744
申请日：2005-06-07
申请人： SHOWA DENKO K.K. , SHIMIZU, Kenji
发明人： SHIMIZU, Kenji
IPC分类号： G11B5/64 , G11B5/73 , G11B5/84
CPC分类号： G11B5/8404 , G11B5/65 , G11B5/667
摘要： A magnetic recording medium includes at least a soft under layer, a perpendicular magnetic recording film and a protective film that are stacked on a nonmagnetic substrate. The nonmagnetic substrate is a disk of silicon having a diameter of 48 mm or less. A method for the production of the magnetic recording medium includes exerting a bias onto the silicon substrate when forming the protective film. A magnetic recording medium can be produced using the method. A magnetic recording and reproducing device can be produced using the magnetic recording medium and a magnetic head for recording and reproducing information in the magnetic recording medium. The magnetic head is a magnetic monopole head.
摘要翻译：磁记录介质至少包括层叠在非磁性基板上的软底层，垂直磁记录膜和保护膜。非磁性基板是直径为48mm以下的硅片。制造磁记录介质的方法包括在形成保护膜时在硅衬底上施加偏压。可以使用该方法制造磁记录介质。可以使用磁记录介质和用于在磁记录介质中记录和再现信息的磁头来制造磁记录和再现装置。磁头是磁单极头。

73. 发明申请

WO2005114754A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III类氮化物半导体发光器件
公开(公告)号：WO2005114754A1
公开(公告)日：2005-12-01
申请号：PCT/JP2005/009723
申请日：2005-05-20
申请人： SHOWA DENKO K.K. , TAKEDA, Hitoshi , HORIKAWA, Syunji
发明人： TAKEDA, Hitoshi , HORIKAWA, Syunji
IPC分类号： H01L33/00
CPC分类号： H01L33/325 , H01L33/305 , H01L33/32
摘要： A Group III nitride semiconductor light emitting device having a light emitting layer (6) bonded to a crystal layer composed of an n-type or p-type Group III nitride semiconductor, the Group III nitride semiconductor light emitting device being characterized by comprising an n-type Group III nitride semiconductor layer (4) having germanium (Ge) added thereto and having a resistivity of 1 x 10 -1 to 1 x 10 -3 Ωcm. The invention provides a Ge-doped n-type Group III nitride semiconductor layer with low resistance and excellent flatness, in order to obtain a Group III nitride semiconductor light emitting device exhibiting low forward voltage and excellent light emitting efficiency.
摘要翻译：一种III族氮化物半导体发光器件，其具有与由n型或p型III族氮化物半导体构成的晶体层结合的发光层（6），所述III族氮化物半导体发光器件的特征在于，包括n 型锗族氮化物半导体层（4），其具有锗（Ge），并具有1×10 -1至1×10 -3欧姆·厘米的电阻率。本发明提供了具有低电阻和优异的平坦度的Ge掺杂的n型III族氮化物半导体层，以便获得显示低正向电压和优异的发光效率的III族氮化物半导体发光器件。

74. 发明申请

WO2005113678A1 ELECTROCONDUCTIVE COMPOSITION AND APPLICATION THEREOF 审中-公开
标题翻译：电磁组合物及其应用
公开(公告)号：WO2005113678A1
公开(公告)日：2005-12-01
申请号：PCT/JP2005/009491
申请日：2005-05-18
申请人： SHOWA DENKO K.K. , OKUBO, Takashi , SAIDA, Yoshihiro , TANAKA, Jun
发明人： OKUBO, Takashi , SAIDA, Yoshihiro , TANAKA, Jun
IPC分类号： C08L65/00
CPC分类号： C08L65/00 , C08G61/122 , C08G61/126 , C08G73/026 , C08L71/02 , C08L79/02 , C08L101/12 , C09D5/24 , H01B1/127 , H01B1/20 , H01L51/0034 , H01L51/0035 , H01L51/0037 , H01L51/0038 , H01L51/0043 , H01L51/5088 , C08L2666/04 , C08L2666/22 , C08L2666/26
摘要： The present invention provides an electroconductive composition containing an aqueous solvent-soluble electroconductive polymer as represented by formula (1) which has a π-electron conjugated system and exhibits electroconductivity in electron conducting mechanism and an aqueous solvent-soluble resin. By using the electroconductive composition of the invention, reduction in resistivity and enhancement in electroconductivity of the coating film can be achieved, and the coating film can be suitable used, for example, as an electroconductive coating film, as coating film for a coated article and in an anode buffer layer of an organic electronic device.
摘要翻译：本发明提供一种导电组合物，其含有式（1）表示的水溶剂可溶性导电聚合物，其具有π-电子共轭体系，并且在电子传导机理中显示出导电性和水溶性溶剂可溶性树脂。通过使用本发明的导电性组合物，可以实现涂膜的电阻率降低和导电性的提高，涂膜可以适合用作例如导电性涂膜，作为涂布物的涂膜，在有机电子器件的阳极缓冲层中。

75. 发明申请

WO2005112136A1 LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：WO2005112136A1
公开(公告)日：2005-11-24
申请号：PCT/JP2005/009287
申请日：2005-05-16
申请人： SHOWA DENKO K.K. , TAMAMURA, Hideo
发明人： TAMAMURA, Hideo
IPC分类号： H01L33/00
CPC分类号： H01L33/508 , H01L2933/0041
摘要： The present invention provides a low-cost light-emitting diode having little irregular color. A light-emitting diode converts light of a first light emission wavelength emitted from an LED as a primary light emission source into light of a second light emission wavelength, using one or a few kinds of phosphor materials. A thin film mainly made of a phosphor material is applied to a light extracting surface of the LED as the primary light emission source, thereby converting a wavelength and emitting light of the secondary light emission wavelength.
摘要翻译：本发明提供一种几何不规则颜色的低成本发光二极管。使用一种或几种荧光体材料，发光二极管将从作为主要发光源的LED发射的第一发光波长的光转换成第二发光波长的光。主要由磷光体材料制成的薄膜被施加到作为主要发光源的LED的光提取表面，从而转换波长并发射二次发光波长的光。

76. 发明申请

WO2005109553A2 CURABLE COMPOSITION, CURED PRODUCT THEREOF AND MOLDED PRODUCT THEREOF 审中-公开
标题翻译：可固化组合物，固化产品及其成型产品
公开(公告)号：WO2005109553A2
公开(公告)日：2005-11-17
申请号：PCT/JP2005/008562
申请日：2005-04-28
申请人： SHOWA DENKO K.K. , SEKI, Kentaro , SASAKI, Nobutoshi , UCHIDA, Hiroshi
发明人： SEKI, Kentaro , SASAKI, Nobutoshi , UCHIDA, Hiroshi
IPC分类号： H01M8/00
CPC分类号： H01M8/0226 , B82Y30/00 , C08C19/25 , C08K3/04 , C08K3/041 , C08K2201/011 , C08L9/00 , C08L15/00 , C08L25/04 , C08L29/08 , H01M8/0213 , H01M8/0221
摘要： A curable composition comprising: at least, (A) a hydrocarbon compound having a plurality of carbon-carbon double bonds, wherein a silyl group is added to at least a part of the carbon-carbon double bonds; and (B) a carbonaceous material. There is provided a curable composition capable of providing a cured product having a high electro-conductivity, which is excellent in thermal resistance, electro-conductivity, moldability (such as those in compression molding, transfer molding, injection molding and injection compression molding), and in particular, excellent in hydrothermal resistance.
摘要翻译：一种可固化组合物，其至少包含（A）具有多个碳 - 碳双键的烃化合物，其中在至少一部分碳 - 碳双键中加入甲硅烷基; 和（B）碳质材料。提供一种能够提供耐热性，电导率，成型性（压缩成型，转印成型，注射成型，注射成型等）中的导电性高的固化物的固化性组合物，特别是耐水热性优异。

77. 发明申请

WO2005106981A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译： III类氮化物半导体发光器件
公开(公告)号：WO2005106981A1
公开(公告)日：2005-11-10
申请号：PCT/JP2005/008551
申请日：2005-04-28
申请人： SHOWA DENKO K.K. , MIKI, Hisayuki , BANDO, Akira , UDAGAWA, Takashi
发明人： MIKI, Hisayuki , BANDO, Akira , UDAGAWA, Takashi
IPC分类号： H01L33/00
CPC分类号： H01L33/32
摘要： A Group III nitride semiconductor light-emitting device provided on a crystal substrate with an n-type and p-type Group III nitride semiconductor of Al X Ga Y In Z N 1 - a M a , wherein 0 ≤ X ≤ 1, 0 ≤ Y ≤ 1, 0 ≤ Z ≤ 1, X + Y + Z = 1, M denotes a Group V element other than N and 0 ≤ a
摘要翻译：一种III型氮化物半导体发光器件，其在晶体衬底上设置有Al x Ga y In z N 1-a M a的n型和p型III族氮化物半导体，其中0 <= X <=1,0,0≤Y≤1,0 <= Z <= 1，X + Y + Z = 1，M表示除N以外的V族元素，0 <= a <1，包括III族氮化物半导体的n型电极接触层，其包含掺杂 Ge和包含未掺杂或掺杂有选自由Si，C，Sn和Pb组成的组中的至少一种元素的区域的发光层。

78. 发明申请

WO2005106980A1 COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：化合物半导体发光器件
公开(公告)号：WO2005106980A1
公开(公告)日：2005-11-10
申请号：PCT/JP2005/008459
申请日：2005-04-27
申请人： SHOWA DENKO K.K. , UDAGAWA, Takashi
发明人： UDAGAWA, Takashi
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16 , H01L33/38
摘要： This pn-junction compound semiconductor light-emitting device includes a crystal substrate; an n-type light-emitting layer formed of a hexagonal n-type Group III nitride semiconductor and provided on the crystal substrate; a p-type Group III nitride semiconductor layer formed of a hexagonal p-type Group III nitride semiconductor and provided on the n-type light-emitting layer; a p-type boron-phosphide-based semiconductor layer having a sphalerite crystal type and provided on the p-type Group III nitride semiconductor layer; and a thin-film layer composed of an undoped hexagonal Group III nitride semiconductor formed on the p-type Group III nitride semiconductor layer, wherein the p-type boron-phosphide-based semiconductor layer is joined to the thin-film layer composed of an undoped hexagonal Group III nitride semiconductor.
摘要翻译：该pn结化合物半导体发光器件包括晶体衬底; 由六边形n型III族氮化物半导体形成的n型发光层，设置在该晶体基板上; 设置在n型发光层上的由六边形p型III族氮化物半导体形成的p型III族氮化物半导体层; 设置在p型III族氮化物半导体层上的具有闪锌矿型晶体的p型磷化硼类半导体层; 以及由在p型III族氮化物半导体层上形成的未掺杂的六方晶III族氮化物半导体构成的薄膜层，其中p型磷化硼类半导体层与由未掺杂的六方晶III族氮化物半导体。

79. 发明申请

WO2005103607A1 PRESSURE RESISTANCE INSPECTING METHOD AND PRESSURE RESISTANCE INSPECTING APPARATUS FOR HEAT EXCHANGERS 审中-公开
标题翻译：耐高压检测方法和耐压检测装置的换热器
公开(公告)号：WO2005103607A1
公开(公告)日：2005-11-03
申请号：PCT/JP2005/008109
申请日：2005-04-21
申请人： SHOWA DENKO K.K. , TOCHIGI, Masaharu , SHIDA, Takashi , FUKAURA, Keiji , AKATSUKA, Takumi
发明人： TOCHIGI, Masaharu , SHIDA, Takashi , FUKAURA, Keiji , AKATSUKA, Takumi
IPC分类号： G01B11/16
CPC分类号： F28D1/0391 , F28F2200/00 , G01M5/005 , G01M5/0091 , G01M11/081 , G01N3/12 , G01N2203/0647 , G01N2203/0694
摘要： A pressure resistance inspecting method is a method of inspecting a heat exchanger for pressure resistance. The interior of the heat exchanger is pressurized, and with the exchanger irradiated with light from one side thereof, a monochromatic image of the exchanger is captured by CCD cameras from the other side thereof before and after the pressurization. Each of the images is divided into dots, luminance data as to the dots of each image is converted into binary data items of white areas and black areas with reference to a threshold value, and the number of black areas is counted. The pressure resistance of the heat exchanger is judged based on an increase in the number of black areas after the pressurization from the number of black areas before the pressurization.
摘要翻译：耐压检查方法是检查耐热性的热交换器的方法。热交换器的内部被加压，并且交换器从其一侧照射光，交换器的单色图像在加压之前和之后由CCD照相机从其另一侧捕获。每个图像被分成点，关于每个图像的点的亮度数据参考阈值被转换为白色区域和黑色区域的二进制数据项目，并且对黑色区域的数量进行计数。基于加压前的黑色区域的黑色区域的数量的增加来判断热交换器的耐压性。

80. 发明申请

WO2005102267A1 AGENT FOR SKIN EXTERNAL USE CONTAINING TOCOPHEROL DERIVATIVE, ASCORBIC ACID DERIVATIVE AND SURFACE ACTIVE AGENT HAVING LIPOPEPTIDE STRUCTURE 审中-公开
标题翻译：含皮质醇衍生物，抗坏血酸衍生物和表面活性剂的皮肤外用剂代谢物
公开(公告)号：WO2005102267A1
公开(公告)日：2005-11-03
申请号：PCT/JP2005/007758
申请日：2005-04-19
申请人： SHOWA DENKO K.K. , KATO, Eiko , TSUZUKI, Toshi , OGATA, Eiji
发明人： KATO, Eiko , TSUZUKI, Toshi , OGATA, Eiji
IPC分类号： A61K7/48
CPC分类号： A61K8/64 , A61K8/676 , A61K8/678 , A61K31/355 , A61K31/375 , A61K2800/52 , A61K2800/522 , A61K2800/84 , A61Q19/00 , A61K2300/00
摘要： The agent for skin external use of the present invention contains (A) tocopherol glycine esters, (B) ascorbic acid-2-phosphoric acid esters and a specific amount of (C) an anionic surface active agent having a lipopeptide structure. According to the agent for skin external use (including a cosmetic) of the present invention, it is possible to enhance stability of the tocopherol glycine esters in spite that the tocopherol glycine esters and the ascorbic acids are contained simultaneously, so that occurrence of coloring (including turbidity) and/or precipitation with time can be prevented. Therefore, efficacy and effects of the agent or the cosmetic can be well exerted over a long period of time.
摘要翻译：本发明的皮肤外用剂包含（A）生育酚甘氨酸酯，（B）抗坏血酸-2-磷酸酯和特定量的（C）具有脂肽结构的阴离子表面活性剂。根据本发明的皮肤外用剂（包括化妆品），尽管生育酚甘氨酸酯和抗坏血酸同时含有，但是可以提高生育酚甘氨酸酯的稳定性，从而发生着色（包括浊度）和/或随时间的沉淀。因此，药剂或化妆品的功效和效果可以很好地长期施行。

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