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61. 发明申请

WO2004105084A3 METHOD OF ROOM TEMPERATURE COVALENT BONDING 审中-公开
标题翻译：室温共价键合方法
公开(公告)号：WO2004105084A3
公开(公告)日：2006-01-05
申请号：PCT/US2004013306
申请日：2004-05-19
申请人： ZIPTRONIX INC , TONG QIN-YI
发明人： TONG QIN-YI
IPC分类号： B81C1/00 , H01L21/3105 , H01L21/58 , H01L21/762 , H01L21/30 , H01L29/04
CPC分类号： B32B7/04 , B32B2250/04 , B81C1/00357 , B81C2201/019 , B81C2203/0118 , B81C2203/019 , H01L21/3105 , H01L21/76251 , H01L24/26 , H01L24/29 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/0401 , H01L2224/08059 , H01L2224/29186 , H01L2224/80896 , H01L2224/81894 , H01L2224/81895 , H01L2224/8319 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/9202 , H01L2224/9212 , H01L2224/92125 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01039 , H01L2924/01058 , H01L2924/01067 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/07802 , H01L2924/10253 , H01L2924/1305 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T428/24355 , Y10T428/24942 , Y10T428/31504 , Y10T428/31678 , H01L2924/3512 , H01L2924/00 , H01L2924/05442
摘要： A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH 2 species. This may be accomplished by exposing the bonding layer to an NH 4 OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.
摘要翻译：接合方法包括使用具有氟化氧化物的接合层。可以通过暴露于含氟溶液，蒸汽或气体或通过注入将氟引入粘合层。接合层也可以使用在其形成期间将氟引入层中的方法形成。接合层的表面用所需的物质，优选NH 2种类终止。这可以通过将粘合层暴露于NH 4 OH溶液来实现。在室温下获得高粘结强度。该方法还可以包括将两个结合层结合在一起并产生在接合层之间的界面附近具有峰的氟分布。结合层之一可以包括彼此形成的两个氧化物层。氟浓度也可以在两个氧化物层之间的界面处具有第二个峰。

62. 发明申请

WO2004105084A2 METHOD OF ROOM TEMPERATURE COVALENT BONDING 审中-公开
标题翻译：室温共价键合方法
公开(公告)号：WO2004105084A2
公开(公告)日：2004-12-02
申请号：PCT/US2004/013306
申请日：2004-05-19
申请人： ZIPTRONIX, INC. , TONG, Qin-Yi
发明人： TONG, Qin-Yi
IPC分类号： H01L
CPC分类号： B32B7/04 , B32B2250/04 , B81C1/00357 , B81C2201/019 , B81C2203/0118 , B81C2203/019 , H01L21/3105 , H01L21/76251 , H01L24/26 , H01L24/29 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/0401 , H01L2224/08059 , H01L2224/29186 , H01L2224/80896 , H01L2224/81894 , H01L2224/81895 , H01L2224/8319 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/9202 , H01L2224/9212 , H01L2224/92125 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01039 , H01L2924/01058 , H01L2924/01067 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/07802 , H01L2924/10253 , H01L2924/1305 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T428/24355 , Y10T428/24942 , Y10T428/31504 , Y10T428/31678 , H01L2924/3512 , H01L2924/00 , H01L2924/05442
摘要： A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH 2 species. This may be accomplished by exposing the bonding layer to an NH 4 OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.
摘要翻译：接合方法包括使用具有氟化氧化物的接合层。可以通过暴露于含氟溶液，蒸汽或气体或通过注入将氟引入粘合层。接合层也可以使用在其形成期间将氟引入层中的方法形成。接合层的表面用所需的物质，优选NH 2物质终止。这可以通过将结合层暴露于NH 4 OH溶液来实现。在室温下获得高粘结强度。该方法还可以包括将两个结合层结合在一起并产生在接合层之间的界面附近具有峰的氟分布。结合层之一可以包括彼此形成的两个氧化物层。氟浓度也可以在两个氧化物层之间的界面处具有第二个峰。

63. 发明申请

WO2003097552A1 A METHOD OF WAFER/SUBSTRATE BONDING 审中-公开
标题翻译：一种波形/基板结合方法
公开(公告)号：WO2003097552A1
公开(公告)日：2003-11-27
申请号：PCT/SG2002/000072
申请日：2002-04-30
申请人： SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY , WEI, Jun , WANG, Zhiping , XIE, Hong
发明人： WEI, Jun , WANG, Zhiping , XIE, Hong
IPC分类号： C03C27/04
CPC分类号： C04B37/04 , C03C27/042 , C04B35/64 , C04B37/00 , C04B2235/666 , C04B2237/52 , H01L24/26 , H01L24/83 , H01L2224/8319 , H01L2224/8385 , H01L2924/01006 , H01L2924/01018 , H01L2924/01023 , H01L2924/01033 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/09701 , H01L2924/12042 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： A method of bonding two components by depositing an amorphous and non-hydrogenated intermediate layer (2) on one of the components (1,4) and arranging the components (1,4) in spaced relationship with the intermediate layer (2) therebetween. The method further comprises heating one or both of the components (1,4) before bringing the components (1,4) into contact. Finally, a voltage is applied to the components (1,4) to create a permanent bond between the two components.
摘要翻译：一种通过在其中一个部件（1,4）上沉积非晶态和非氢化中间层（2）并且将组件（1,4）与它们之间的中间层（2）间隔开的关系来结合两个部件的方法。该方法还包括在使组分（1,4）接触之前加热组分（1,4）中的一种或两种。最后，向组件（1,4）施加电压以在两个组件之间产生永久的接合。

64. 发明申请

WO02009168A1 CURVED CHIP ON RIGID SUPPORT TO BE MOUNTED REMOVABLE ON AN APPLIANCE 审中-公开
标题翻译：在设备上安装的刚性支持的弯曲芯片
公开(公告)号：WO02009168A1
公开(公告)日：2002-01-31
申请号：PCT/FR2001/002357
申请日：2001-07-19
IPC分类号： G06K19/077 , H01L21/58 , H01L23/13 , H01L23/498 , H01L29/06
CPC分类号： H01L24/83 , G06K19/07749 , H01L23/13 , H01L23/49855 , H01L24/26 , H01L29/0657 , H01L2224/8319 , H01L2224/8385 , H01L2924/01004 , H01L2924/01039 , H01L2924/01047 , H01L2924/01058 , H01L2924/01061 , H01L2924/01073 , H01L2924/01079 , H01L2924/07802 , H01L2924/07811 , H01L2924/14 , H01L2924/19042
摘要： The invention concerns a method for making a portable smart object, which consists in transferring a chip (2) on a rigid final support (22; 50; 84), on part of the surface of said support (22; 50; 84) previously or subsequently comprising a curvature and/or several surfaces (84a; 94b; 84c). Typically, the chip has a thickness of the order of 10 mu m.
摘要翻译：本发明涉及一种用于制造便携式智能物体的方法，该方法包括：将先前在所述支撑件（22; 50; 84）的一部分表面上的刚性最终支撑件（22; 50; 84）上的芯片（2）或随后包括曲率和/或几个表面（84a; 94b; 84c）。通常，芯片的厚度为10μm左右。

65. 发明申请

WO01091175A1 METHOD AND DEVICE FOR BLEED OUT CONTROL IN SOLDER BONDING 审中-公开
标题翻译：用于在焊接接合中进行排放控制的方法和装置
公开(公告)号：WO01091175A1
公开(公告)日：2001-11-29
申请号：PCT/SG2001/000099
申请日：2001-05-23
IPC分类号： H01L21/52 , H01L21/60 , H01L23/495 , H01L21/58
CPC分类号： H01L24/83 , H01L23/49513 , H01L24/26 , H01L24/75 , H01L2224/8319 , H01L2224/83801 , H01L2924/01033 , H01L2924/01039 , H01L2924/01058 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/14
摘要： An improved die placement and bonding apparatus with bleed out control for attachment of a die onto the prescribed surface of a leadframe. The apparatus contains a bond frame provided with an alignment mechanism, and a die placement mechanism. The frame has a perimeter side wall with a base defining a predetermined area therein, with dimensions larger than the dimensions of the die. The side wall is used to provide a solder liquid tight seal when it is placed on a prescribed surface of the leadframe. The alignment mechanism is coupled to the frame and allows the frame to be properly aligned with the leadframe before it is lowered onto the prescribed surface. The die placement mechanism is used for delivering and placing the die onto the liquid solder on the leadframe within the side wall.
摘要翻译：一种改进的管芯放置和粘合装置，具有用于将管芯附接到引线框架的规定表面上的渗出控制。该装置包括设置有对准机构的接合框架和模具放置机构。框架具有周边侧壁，其具有限定其中的预定区域的基部，其尺寸大于模具的尺寸。当侧壁被放置在引线框的规定表面上时，用于提供焊液密封。对准机构联接到框架，并且允许框架在引导框架下降到规定的表面之前与引线框架正确对准。管芯放置机构用于将管芯递送并放置在侧壁内的引线框架上的液体焊料上。

66. 发明申请

WO01078131A1 PROCESS AND ASSEMBLY FOR APPLYING AN ADHESIVE TO A SUBSTRATE 审中-公开
标题翻译：将胶粘剂应用于基材的方法和组装
公开(公告)号：WO01078131A1
公开(公告)日：2001-10-18
申请号：PCT/SG2001/000053
申请日：2001-04-05
IPC分类号： H01L21/00 , H01L21/58 , H01L21/56 , C09J7/00
CPC分类号： H01L24/83 , H01L21/67132 , H01L24/26 , H01L2224/8319 , H01L2224/8385 , H01L2924/07802 , H01L2924/14 , Y02P80/30 , H01L2924/00
摘要： A process for applying an adhesive panel to a substrate including the steps of:- providing a die including two operatively linked die parts each having a die cavity;- lowering the die to punch a panel of adhesive out of a strip of adhesive and into the die cavity of one die part;- rotating the die to transfer the panel of adhesive which is retained in the die cavity to a substrate;- lowering the die and applying heat and pressure to adhere the adhesive panel to the substrate, whilst at the same time punching a panel of adhesive out of the strip of adhesive with the other of the die parts; and- transferring the substrate having the adhesive panel bonded thereto to a rolling station where a roller is passed transversely across the surface of the adhesive to taper the edges of the adhesive panel so as to create a domed upper surface of the adhesive panel.
摘要翻译：一种将粘合剂面板应用于基材的方法，包括以下步骤： - 提供包括两个具有模腔的可操作连接的模具部件的模具; - 降低模具以将粘合剂板从粘合剂条上冲出并进入一个模具部件的模腔; - 旋转模具以将保留在模腔中的粘合剂面板转移到基底; - 降低模具并施加热和压力以将粘合剂面板粘附到基底上，同时将另一个模具部件的粘合剂带从粘合剂条上冲出一段时间; 以及 - 将具有粘合剂的粘合剂面板的基材转移到辊子横向穿过粘合剂表面的轧制工位，以使粘合剂面板的边缘逐渐变细，从而形成粘合剂面板的圆顶形上表面。

67. 发明申请

WO01069676A2 METHOD AND APPARATUS FOR BONDING SUBSTRATES 审中-公开
标题翻译：用于粘结基板的方法和装置
公开(公告)号：WO01069676A2
公开(公告)日：2001-09-20
申请号：PCT/US2001/007874
申请日：2001-03-13
IPC分类号： H01L21/48 , H01L21/58 , H01L23/36 , H01L23/373
CPC分类号： H01L24/83 , H01L21/4882 , H01L23/36 , H01L24/26 , H01L2224/8319 , H01L2224/8385 , H01L2224/83894 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/014 , H01L2924/07802 , H01L2924/14
摘要： A method for bonding diamond heat distribution structures to integrated circuit packages using optical contacting. In one embodiment, a heat spreader comprising diamond slab has a flat contact surface which is polished to a high degree of smoothness. An integrated circuit's package also has a flat contact surface which is polished to a high degree of smoothness. The contact surfaces of the diamond slab and the package are thoroughly cleaned and are then placed in contact with each other, establishing an optical contact bond between them. In one embodiment, the contact surfaces of the diamond and package which are to be bonded together are first polished, then a layer of an intermediate material such as silicon carbide is deposited on the polished surfaces. The silicon carbide layers on the contact surfaces are cleaned and placed in contact with each other to establish an optical contact bond. If desired, the silicon carbide layers on the contact surfaces may be activated with a substance such as hydrogen fluoride to promote bonding.
摘要翻译：一种使用光学接触将金刚石热分布结构结合到集成电路封装的方法。在一个实施例中，包括金刚石板的散热器具有平坦的接触表面，其被抛光到高度的平滑度。集成电路的封装还具有平坦的接触表面，其被抛光到高度的平滑度。金刚石板和封装的接触表面被彻底清洁，然后彼此接触，在它们之间建立光学接触。在一个实施例中，首先研磨要结合在一起的金刚石和封装的接触表面，然后在抛光表面上沉积诸如碳化硅的中间材料层。接触表面上的碳化硅层被清洁并相互接触以建立光学接触键。如果需要，接触表面上的碳化硅层可以用诸如氟化氢的物质来活化以促进结合。

68. 发明申请

WO01020659A1 METHOD FOR TRANSFERRING INTEGRATED CIRCUIT MICROCHIPS AND IMPLEMENTING DEVICE 审中-公开
标题翻译：用于传输集成电路微处理器和实现器件的方法
公开(公告)号：WO01020659A1
公开(公告)日：2001-03-22
申请号：PCT/FR2000/002379
申请日：2000-08-25
IPC分类号： H01L21/58 , H01L21/60
CPC分类号： H01L24/83 , H01L24/26 , H01L2221/68359 , H01L2221/68363 , H01L2224/8319 , H01L2224/83801 , H01L2224/8385 , H01L2924/01005 , H01L2924/01023 , H01L2924/07802 , H01L2924/14
摘要： The invention concerns a method for turning integrated circuit chips, which consists in arranging a wafer (1) of chips (5) in a given orientation on a first adhesive film (2); optionally separating the individual chips from the assembly and turning around the chips (5) still fixed to the first adhesive onto a second adhesive (6) which, after the first adhesive has been removed, maintains said chips in the desired orientation, said second adhesive having a higher adhesive coefficient than the first adhesive, optionally after the latter has been degraded. The invention is useful for transferring integrated circuit flip-chips into or onto a module of a card body.
摘要翻译：本发明涉及一种用于转动集成电路芯片的方法，其中包括将芯片（5）的晶片（1）以给定方向布置在第一粘合膜（2）上; 可选地将各个芯片与组件分离并将仍然固定到第一粘合剂上的切屑（5）转动到第二粘合剂（6）上，第二粘合剂（6）在第一粘合剂被去除之后将所述切屑保持在所需取向，所述第二粘合剂具有比第一粘合剂更高的粘合系数，任选地在后者已经劣化之后。本发明对于将集成电路翻转芯片传送到卡体的模块中或其上的模块是有用的。

69. 发明申请

WO01015224A1 METHOD FOR PROTECTING INTEGRATED CIRCUIT CHIPS BY DEPOSITING A THIN INSULATION LAYER 审中-公开
标题翻译：通过沉积薄膜绝缘层保护集成电路的方法
公开(公告)号：WO01015224A1
公开(公告)日：2001-03-01
申请号：PCT/FR2000/002344
申请日：2000-08-18
IPC分类号： H01L21/316 , H01L21/56 , H01L21/58 , H01L21/68 , H01L23/29 , H01L23/31 , C23C16/50
CPC分类号： H01L21/568 , H01L21/31612 , H01L21/56 , H01L21/6835 , H01L23/291 , H01L23/3171 , H01L23/3185 , H01L24/26 , H01L24/83 , H01L2224/16 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01029 , H01L2924/01047 , H01L2924/01058 , H01L2924/01061 , H01L2924/01073 , H01L2924/01076 , H01L2924/01079 , H01L2924/01094 , H01L2924/07802 , H01L2924/14
摘要： The invention relates to a method for protecting integrated circuit chips (100) on a silicon wafer, comprising the following stages: cutting the silicon wafer in such a way as to separate the integrated circuit chips (100); depositing an electrically insulating material (150) on the back panel (104) and the sides (106) of each integrated circuit chip (100) in the form of a thin layer. This thin layer can be deposited using known techniques, especially by cathode sputtering or by vacuum evaporation.
摘要翻译：本发明涉及一种用于保护硅晶片上的集成电路芯片（100）的方法，包括以下步骤：以分离集成电路芯片（100）的方式切割硅晶片; 以薄层的形式在每个集成电路芯片（100）的后面板（104）和侧面（106）上沉积电绝缘材料（150）。可以使用已知技术，特别是通过阴极溅射或通过真空蒸发来沉积该薄层。

70. 发明申请

WO99016114A1 METHOD FOR PRODUCING A COMPOSITE PART AND COMPOSITE PART 审中-公开
标题翻译：一种用于生产复合材料部件和复合材料部件
公开(公告)号：WO99016114A1
公开(公告)日：1999-04-01
申请号：PCT/DE1998/002359
申请日：1998-08-14
IPC分类号： B41J2/05 , B41J2/16 , C03C27/04 , C04B37/04 , H01L21/20 , H01L21/326 , H01L21/58
CPC分类号： H01L24/83 , B32B18/00 , C03C27/044 , C04B37/045 , C04B2235/666 , C04B2237/16 , C04B2237/30 , C04B2237/36 , C04B2237/52 , C04B2237/561 , H01L24/26 , H01L2224/8319 , H01L2224/8385 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01049 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/07802 , H01L2924/09701 , H01L2924/10329 , H01L2924/12036 , H01L2924/12043 , H01L2924/00
摘要： The invention relates to a method for producing a composite part consisting of a component and a glass plate (10). According to said method, a body (1) formed by a semiconductor substrate is brought into contact with the glass plate (10) and an electric voltage is applied between the body (1) and the glass plate (10), said voltage been high enough to move the ions contained in the glass plate (10). Before the body (1) and the glass plate (10) are assembled, a connecting layer (8) containing silicon is applied on the body (1). Before the connection layer (8) is applied, at least one additional layer (2) is formed in or applied on the body (1) and doping agents are implanted on the additional layer (2).
摘要翻译：本发明涉及一种方法，用于制造的部件和玻璃板（10），其中，通过在半导体基板形成体（1）接触，在接触的玻璃板（10）和所述主体（1）和所述玻璃板之间的复合材料部件（10 ）的电电压被施加其是如此之大，（在玻璃板离子含有10）是可移动的，其中所述方法进行，使得 - 所述主体（1）与玻璃板之前（10）相关联 - 在主体（1）的化合物层（8），其包含硅，沉积并在 - （8）被施加在连接层之前 - 至少一个另外的层中的主体（1）（2）形成或在所述主体（1 ）沉积并植入，所述另外的层（2）的掺杂剂。

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