专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

WO00041250A1 SPIN DEPENDENT TUNNELING SENSOR 审中-公开
标题翻译：旋转依赖隧道传感器
公开(公告)号：WO00041250A1
公开(公告)日：2000-07-13
申请号：PCT/US2000/000039
申请日：2000-01-03
IPC分类号： G01R33/06 , G11B5/39 , H01L43/08 , H01L43/00
CPC分类号： G01R33/098 , B82Y10/00 , B82Y25/00 , G01R33/06 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01L43/08
摘要： A magnetic field sensor having a junction structure (23) in a sensor (21, 22) cell using a dielectric intermediate separating material (14) with two major surfaces on one of which is a base anisotropic ferromagnetic thin-film (12, 13) which is also on a base eelctrode (11', 12, 13), and on the other of which there is at least one of a plurality of separate anisotropic ferromagnetic thin-films (15, 16, 17) but of differing rotational responses (18) to external magnetic fields. Similar structures have a separated film (15, 16, 17) in each that can be interconnected to one another with the interconnections (25) extending at least in part substantially parallel to the widths of the separated films (15, 16, 17), and the separated films (15, 16, 17) can have lengths with gradually narrowing widths to the ends thereof as can the base electrode (11', 12, 13). One or more planar coils (27, 29) can be supported at least in part on the separated films (15, 16, 17).
摘要翻译：一种具有在传感器（21,22）单元中具有接合结构（23）的磁场传感器，其使用具有两个主表面的电介质中间分离材料（14），其中一个主要表面是基底各向异性铁磁性薄膜（12,13）其还在基底鳗（11'，12,13）上，另一个具有多个单独的各向异性铁磁性薄膜（15,16,17）中的至少一个，但具有不同的旋转响应（ 18）到外部磁场。类似的结构具有每个分离的薄膜（15,16,17），它们彼此互连，互连（25）至少部分延伸至基本平行于分离的薄膜（15,16,17）的宽度，并且分离的膜（15,16,17）可以具有与其基端电极（11'，12,13）一样的其端部的宽度逐渐变窄的长度。一个或多个平面线圈（27,29）可以至少部分地被支撑在分离的薄膜（15,16,17）上。

62. 发明申请

WO00037715A1 BISMUTH THIN FILM STRUCTURE AND METHOD OF CONSTRUCTION 审中-公开
标题翻译： BISMUTH薄膜结构及其构造方法
公开(公告)号：WO00037715A1
公开(公告)日：2000-06-29
申请号：PCT/US1999/027237
申请日：1999-11-18
IPC分类号： C23C28/00 , C25D3/00 , C25D3/54 , C25D5/00 , C25D5/34 , C25D5/50 , G01R33/09 , G11B5/39 , H01F41/26 , H01L43/12 , G11B5/33 , H01L43/02
CPC分类号： B82Y25/00 , B82Y10/00 , C25D3/54 , C25D5/50 , G01R33/09 , G11B5/3903 , G11B2005/3996 , H01F41/26 , H01L43/12 , Y10S205/922
摘要： The invention is directed to the use of electrochemical deposition to fabricate thin films of a material (e.g., bismuth) exhibiting a superior magnetoresistive effect. The process in accordance with a preferred embodiment produces a thin film of bismuth with reduced polycrystallinization and allows for the production of single crystalline thin films. Fabrication of a bismuth thin film in accordance with a preferred embodiment of the invention includes deposition of a bismuth layer (120) onto a substrate (200) with a metallic underlayer (118) using electrochemical deposition under relatively constant current density. Preferably, the resulting product is subsequently exposed to an annealing stage for the formation of single crystal bismuth thin film. The inclusion of these two stages in the process produces a thin film exhibiting superior MR with a simple field dependence in the process suitable for a variety of field sensing applications.
摘要翻译：本发明涉及使用电化学沉积来制造表现出优异磁阻效应的材料（例如铋）的薄膜。根据优选实施方案的方法产生具有减少的多晶化的铋薄膜并允许制备单晶薄膜。根据本发明的优选实施方案的铋薄膜的制造包括使用电化学沉积在相对恒定的电流密度下用金属底层（118）将铋层（120）沉积到基底（200）上。优选地，将所得产物随后暴露于用于形成单晶铋薄膜的退火阶段。在该方法中包含这两个阶段产生了在适用于各种场感测应用的工艺中具有优异MR的薄膜，具有简单的场依赖性。

63. 发明申请

WO00036594A1 READ HEAD WITH READ TRACK WIDTH DEFINING LAYER THAT PLANARIZES THE WRITE GAP LAYER OF A WRITE HEAD 审中-公开
标题翻译：阅读头与阅读轨迹宽度定义层平面写写头的写入层
公开(公告)号：WO00036594A1
公开(公告)日：2000-06-22
申请号：PCT/GB1999/003917
申请日：1999-11-24
IPC分类号： G11B5/012 , G11B5/31 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , Y10T29/49025 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/4905 , Y10T29/49052
摘要： A read track width defining layer (306, 310) is employed for defining first (322) and second side edges of a read sensor. The read track width defining layer (310) preferably remains in the head to planarize the read head at first (330) and second (332) hard bias and lead layers so as to overcome a problem of write gap curvature in an accompanying write head. The read track width defining layer is defined by a subtractive process about a bilayer photoresist layer (308). The subtractive process is selective to the read track width defining layer over a read sensor material layer (304) therebelow. Ion milling is then employed for defining first and second side edges of a read sensor layer employing the read track width defining layer as a mask. First and second hard bias and lead layers are then deposited which make contiguous junctions with the first and second side edges of each of the read sensor and read track width defining layers. The photoresist is then removed and the remainder of the read head is completed.
摘要翻译：读磁道宽度限定层（306,310）用于限定读传感器的第一（322）和第二侧边。读磁道宽度限定层（310）优选地保留在磁头中以在第一（330）和第二（332）硬偏压和引线层处平坦化读头，从而克服伴随写头中的写间隙曲率的问题。读取磁道宽度限定层通过关于双层光致抗蚀剂层（308）的减去法来定义。减法过程在其下的读取传感器材料层（304）上对读取磁道宽度限定层是选择性的。然后使用离子铣削来定义读取传感器层的第一和第二侧边缘，采用读取磁道宽度限定层作为掩模。然后沉积第一和第二硬偏压和引线层，其与读取传感器和读取磁道宽度限定层中的每一个的第一和第二侧边缘相连接。然后去除光致抗蚀剂，并且完成读头的其余部分。

64. 发明申请

WO00030077A1 DIFFERENTIAL VGMR SENSOR 审中-公开
标题翻译：差分VGMR传感器
公开(公告)号：WO00030077A1
公开(公告)日：2000-05-25
申请号：PCT/US1999/023119
申请日：1999-10-06
IPC分类号： G01R33/09 , G11B5/00 , G11B5/09 , G11B5/127 , G11B5/39 , H01F10/16 , H01F10/30 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/1278 , G11B5/3951 , G11B5/3954 , G11B2005/0018 , G11B2005/3996
摘要： A Vertical Giant Magnetoresistive Sensor (VGMR) with two VGMR structures (61A, 61B), each responding differently to an external magnetic field, producing a differential signal proportional to the field. The magnetizations (M1, M1', M2, M2') in each of the sensors are oriented antiparallel. The antiparallel magnetization is attained by altering the magnetic compositions of the two structures, or adding an additional structure such as a permanent magnet or current strip (11) between the VGMR structures.
摘要翻译：具有两个VGMR结构（61A，61B）的垂直巨磁电阻传感器（VGMR），每个响应与外部磁场不同，产生与场成比例的差分信号。每个传感器中的磁化（M1，M1'，M2，M2'）反平行取向。反平行磁化通过改变两个结构的磁性组成，或者在VGMR结构之间添加额外的结构例如永磁体或电流带（11）来实现。

65. 发明申请

WO00022612A1 MAGNETIC SENSOR, MAGNETIC HEAD, MAGNETIC ENCODER, AND HARD DISK DRIVE 审中-公开
标题翻译：磁性传感器，磁头，磁性编码器和硬盘驱动器
公开(公告)号：WO00022612A1
公开(公告)日：2000-04-20
申请号：PCT/JP1999/005568
申请日：1999-10-08
IPC分类号： G01R33/06 , G11B5/012 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11B5/012 , G11B5/3903 , G11B2005/3996
摘要： A magnetic sensor with a ferromagnetic tunnel junction comprises a free layer (10) where the direction of magnetization rotates freely, and a barrier layer (11) formed on the free layer and including a first region that is locally thin. The portion of the free layer, corresponding to the first region, functions as a sensor (13) for detecting an external magnetic field. This structure provides a magnetic sensor, a magnetic head, and a magnetic encoder with increased sensitivity. A magnetic head adaptable to high-density recording and a hard disk drive with the magnetic head are thus provided.
摘要翻译：具有铁磁隧道结的磁传感器包括其中磁化方向自由旋转的自由层（10）和形成在自由层上并包括局部薄的第一区域的阻挡层（11）。对应于第一区域的自由层的部分用作用于检测外部磁场的传感器（13）。该结构提供了灵敏度增加的磁传感器，磁头和磁编码器。因此，提供了适用于高密度记录的磁头和具有磁头的硬盘驱动器。

66. 发明申请

WO00014733A1 INFORMATION RECORDING/REPRODUCING DEVICE 审中-公开
标题翻译：信息记录/再现设备
公开(公告)号：WO00014733A1
公开(公告)日：2000-03-16
申请号：PCT/JP1998/003929
申请日：1998-09-02
IPC分类号： G11B5/00 , G11B5/39 , G11B5/55 , G11B5/596 , G11B5/74 , G11B5/82 , G11B11/105 , G11B5/02
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/398 , G11B5/5552 , G11B5/59683 , G11B5/74 , G11B5/82 , G11B11/1053 , G11B11/10532 , G11B11/10541 , G11B11/10554 , G11B11/10576 , G11B11/1058 , G11B2005/0002 , G11B2005/0005 , G11B2005/0016 , G11B2005/0021 , G11B2005/3996
摘要： An information recording/reproducing device using a recording medium which holds information by a reversed magnetic domain on a vertical magnetic recording film, comprising a light projecting means which projects an electromagnetic energy or light onto the recording medium and a magnetic flux sensing means which is located on the same side as the light projecting means and senses the leakage magnetic flux from the recording medium. With this construction, information can be recorded on both sides of the recording medium.
摘要翻译：一种使用记录介质的信息记录/再现装置，该记录介质通过垂直磁记录膜上的反向磁畴保持信息，包括将电磁能量或光投射到记录介质上的光投射装置和位于在与光投射装置相同的一侧上，并且感测来自记录介质的漏磁通。利用这种结构，可以在记录介质的两侧记录信息。

67. 发明申请

WO00011664A1 THIN FILM SHIELDED MAGNETIC READ HEAD DEVICE 审中-公开
标题翻译：薄膜屏蔽磁头阅读头装置
公开(公告)号：WO00011664A1
公开(公告)日：2000-03-02
申请号：PCT/EP1999/006163
申请日：1999-08-23
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3961 , G11B2005/3996
摘要： A thin film shielded magnetic read head device comprises an end face extending in a first direction, in which a magnetic information carrier is movable with respect to the magnetic head device, and in a second direction, perpendicular to said first direction. The magnetic head device further comprises shield forming flux guiding elements (S1, S2) for magnetic cooperation with the information carrier, which elements extend in the second direction and in a third direction, perpendicular to the first and the second direction. A number of magnetoresistive elements (F1, IB, F2) each having a spin tunnel junction structure is provided, which number of magnetoresistive elements corresponds to the number of magnetic channels of the magnetic head device. One of said shields (S1) forms a common contact lead for the current through said magnetoresistive elements. The thin film magnetic read head device is applied in a system for reading information from a magnetic information carrier.
摘要翻译：薄膜屏蔽磁读头装置包括沿着第一方向延伸的端面，其中磁信息载体相对于磁头装置可移动，并且在垂直于所述第一方向的第二方向上延伸。磁头装置还包括用于与信息载体磁协作的屏蔽成形磁通引导元件（S1，S2），这些元件在垂直于第一和第二方向的第二方向和第三方向上延伸。提供了各自具有自旋隧道结结构的多个磁阻元件（F1，IB，F2），多个磁阻元件对应于磁头器件的磁通道数。所述屏蔽件（S1）中的一个形成用于通过所述磁阻元件的电流的公共接触引线。薄膜磁读头装置应用于从磁信息载体读取信息的系统中。

68. 发明申请

WO99008265A1 SPIN BULB MAGNETORESISTANT ELEMENT AND METHOD FOR DESIGNING IT 审中-公开
标题翻译：旋转磁珠元件及其设计方法
公开(公告)号：WO99008265A1
公开(公告)日：1999-02-18
申请号：PCT/JP1998/003309
申请日：1998-07-24
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F41/30 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/08
摘要： A spin bulb magnetoresistant element provided with a free layer of a magnetic layer, a pinned layer of a magnetic layer, a non-magnetic layer interposed therebetween, and a permanent magnet film for controlling the magnetic domains of the free layer. The product of the residual magnetization (unit: mu emu/cm ) and the thickness (unit: cm) of the permanent magnet film is expressed by a function f(x) of Equation (1) where the track width is represented by x (unit: mu m). With this construction of the permanent magnet film, a large output can be achieved even with a narrow track, and the output characteristics are good with neither hysteresis nor inflection point. Equation (1): f(x) = -11.24 X (1/x ) + A [wherein x
摘要翻译：设置有磁性层自由层，磁性层的被钉扎层，插入其间的非磁性层的自旋式灯泡磁阻元件和用于控制自由层的磁畴的永磁体膜。永久磁铁膜的残余磁化积（单位：mu emu / cm 3）和厚度（单位：cm）的乘积由表示轨道宽度的式（1）的函数f（x）表示 x（单位：亩）。通过这种永磁体膜的结构，即使使用窄轨迹也能实现大的输出，并且输出特性良好，既没有滞后也没有拐点。等式（1）：f（x）= -11.24×（1 / x2）+ A [其中x <2和A = 670-900]。

69. 发明申请

WO98057188A1 SENSOR COMPRISING A WHEATSTONE BRIDGE 审中-公开
标题翻译：传感器包括一个WHEATSTONE桥
公开(公告)号：WO98057188A1
公开(公告)日：1998-12-17
申请号：PCT/IB1998/000688
申请日：1998-05-11
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/09 , G01R33/096 , G11B5/3945 , G11B2005/3996
摘要： A sensor comprising a substrate on which a plurality of resistive elements (7a, 7b, 7c, 7d) is arranged in a Wheatstone bridge configuration (5), whereby at least one of the resistive elements demonstrates a magneto-resistive effect, the resistive elements (7a, 7b, 7c, 7d) being provided in branches which respectively connect: (a) a current input terminal (Ii) with a first voltage terminal (VQ); (b) the first voltage terminal (VQ) with a current output terminal (Io); (c) the current output terminal (Io) with a second voltage terminal (VR); (d) the second voltage terminal (VR) with the current input terminal (Ii), whereby the sensor comprises a second Wheatstone bridge (5') which is electrically connected to the first Wheatstone bridge (5) already referred to, the first and second Wheatstone bridges (5, 5') being identical except in that, if a given magneto-resistive element in a given branch in one bridge has a positive output polarity, then the corresponding magneto-resistive element in the same branch in the other bridge has a negative output polarity. By adding the output signals from the two Wheatstone bridges (5, 5'), the zero-point offset of the sensor can be determined and eliminated. This is achieved without the need to use the so-called flipping technique employed in conventional sensors.
摘要翻译：一种传感器，包括在惠斯通电桥配置（5）中布置有多个电阻元件（7a，7b，7c，7d）的基板，由此至少一个电阻元件呈现出磁阻效应，电阻元件（7a，7b，7c，7d）分别设置有：（a）电流输入端子（Ii）与第一电压端子（VQ）; （b）具有电流输出端子（Io）的第一电压端子（VQ）; （c）具有第二电压端子（VR）的电流输出端子（Io）; （d）具有电流输入端子（Ii）的第二电压端子（VR），由此传感器包括电连接到已经参考的第一惠斯登电桥（5）的第二惠斯登电桥（5'），第一和第二个惠斯通电桥（5,5'）是相同的，除了在一个桥中的给定分支中的给定磁阻元件具有正输出极性的情况下，则在另一个桥中的相同分支中的对应的磁阻元件具有负输出极性。通过添加两个惠斯通电桥（5,5'）的输出信号，可以确定和消除传感器的零点偏移。这是在不需要使用常规传感器中使用的所谓的翻转技术的情况下实现的。

70. 发明申请

WO9837550A2 MULTI-CHANNEL MAGNETIC HEAD WITH MAGNETORESISTIVE ELEMENTS 审中-公开
标题翻译：具有磁性元件的多通道磁头
公开(公告)号：WO9837550A2
公开(公告)日：1998-08-27
申请号：PCT/IB9800092
申请日：1998-01-22
申请人： KONINKL PHILIPS ELECTRONICS NV , PHILIPS NORDEN AB
发明人： RUIGROK JACOBUS JOSEPHUS MARIA , SOMERS GERARDUS HENRICUS JOHAN
IPC分类号： G11B5/11 , G11B5/235 , G11B5/29 , G11B5/39 , G11B5/40
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/11 , G11B5/3903 , G11B5/3925 , G11B5/3945 , G11B5/3951 , G11B5/40 , G11B2005/3996
摘要： Multi-channel magnetic head having a high channel density, provided with a head face (1) which extends in a first direction (I) in which a record carrier is relatively movable with respect to said magnetic head, and in a second direction (II) transverse to the first direction. The magnetic head has a structure of layers which, viewed in the first direction, are situated one on top of the other and extend substantially in the second direction and in a third direction (III) transverse to the first and the second direction. Viewed in the second direction, adjacent magnetoresistive sensors (S1, S2, S3) are distinguishable in the structure, each comprising a magnetoresistive measuring element (5), a first magnetic element (7) and a second magnetic element (9). The magnetic elements of adjacent sensors are electrically conducting and have electric connection faces (70a, 9a), while the measuring element in each sensor is electrically arranged in series between the first and the second magnetic element for passing a measuring current (i) through the measuring element substantially in the third direction.
摘要翻译：具有高通道密度的多通道磁头，其具有在第一方向（I）上延伸的头部面（1），其中记录载体相对于所述磁头相对移动，并且在第二方向（II ）横向于第一方向。磁头具有从第一方向观察的层的结构，其一个位于另一个的顶部上，并且基本上沿第二方向延伸，并且在横向于第一和第二方向的第三方向（III）上延伸。在第二方向上观察，相邻的磁阻传感器（S1，S2，S3）在结构上是可区分的，每个包括磁阻测量元件（5），第一磁性元件（7）和第二磁性元件（9）。相邻传感器的磁性元件是导电的并且具有电连接面（70a，9a），而每个传感器中的测量元件串联地电排列在第一和第二磁性元件之间，用于使测量电流（i）通过测量元件基本上在第三方向上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式