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    • 65. 发明申请
    • CATHETER
    • 导管
    • WO2014176486A1
    • 2014-10-30
    • PCT/US2014/035431
    • 2014-04-25
    • SERRANO, Eric
    • SERRANO, Eric
    • A61F5/44A61M25/00A61M27/00A61F5/453
    • A61M25/0017A61F5/4404A61M2205/18A61M2205/3368
    • Provided in one embodiment is a system that includes a collection reservoir coupled to a flexible tube. The system may also include a temperature sensor disposed in the flexible tube and a control system. The control system may further include a processor configured to detect an amount of a fluid flowing in the flexible tube by detecting a temperature change in the flexible tube using the temperature sensor. The system may also include a signaling device. The signaling device may be activated by the processor responsive to the processor not detecting fluid flow in the flexible tube after a predetermined amount of time. In some embodiments, the system includes a full catheter system, and in some embodiments the system includes a coupling that may be added to off-the-shelf catheters.
    • 在一个实施例中提供了一种系统,其包括联接到柔性管的收集容器。 该系统还可以包括设置在柔性管中的温度传感器和控制系统。 控制系统还可以包括处理器,其配置成通过使用温度传感器检测柔性管中的温度变化来检测在柔性管中流动的流体的量。 系统还可以包括信令装置。 响应于处理器在预定的时间量之后不检测柔性管中的流体流动,可以由处理器激活信号装置。 在一些实施例中,该系统包括全导管系统,并且在一些实施例中,该系统包括可附加到现成的导管的联接器。
    • 68. 发明申请
    • METHODS OF FORMING A LOW RESISTANCE SILICON METAL CONTACT
    • 形成低电阻硅金属接触的方法
    • WO2011109242A1
    • 2011-09-09
    • PCT/US2011/026253
    • 2011-02-25
    • INNOVALIGHT, INC.POPLAVSKYY, DmitryABBOTT, Malcolm
    • POPLAVSKYY, DmitryABBOTT, Malcolm
    • H01L21/22
    • H01L31/022425Y02E10/50
    • A method of forming an ohmic contact on a substrate is described. The method includes depositing a set of silicon particles on the substrate surface. Then, heating the substrate to a baking temperature for a baking time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient comprising POCI 3 , a carrier N 2 gas, a main N 2 gas, and a reactive 0 2 gas at a temperature for a time period, wherein a PSG layer is formed on the substrate surface. The method also includes heating the substrate to a drive-in temperature and for a time period; and depositing a silicon nitride layer. The method further includes depositing a set of metal contacts on the set of silicon particles; and heating the substrate to a firing temperature and for a time period.
    • 描述了在衬底上形成欧姆接触的方法。 该方法包括在衬底表面上沉积一组硅颗粒。 然后,将基板加热到烧成温度以进行焙烧时间,以便产生致密的薄膜油墨图案。 该方法还包括在一段时间内将衬底暴露于扩散炉中的掺杂剂源,其中沉积环境包括POCI 3,载体N 2气体,主N 2气体和反应性O 2气体,其中PSG层为 形成在基板表面上。 该方法还包括将衬底加热到​​驱动温度和一段时间; 并沉积氮化硅层。 该方法还包括在该硅颗粒组上沉积一组金属触点; 并将基板加热至焙烧温度并持续一段时间。