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51. 发明申请

WO2008029283A3 OPTOELECTRONIC DEVICE FOR HIGH-SPEED DATA TRANSFER 审中-公开
标题翻译：用于高速数据传输的光电设备
公开(公告)号：WO2008029283A3
公开(公告)日：2008-12-18
申请号：PCT/IB2007003510
申请日：2007-06-06
申请人： LEDENTSOV NIKOLAI , SHCHUKIN VITALY
发明人： LEDENTSOV NIKOLAI , SHCHUKIN VITALY
IPC分类号： H01S5/183 , H01L31/00 , H01L33/00 , H01L33/10 , H01S5/00 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/062 , H01S5/12 , H01S5/20
CPC分类号： H01S5/1833 , H01L31/02327 , H01L31/1035 , H01L33/0045 , H01L33/105 , H01S5/0014 , H01S5/0264 , H01S5/0265 , H01S5/0285 , H01S5/0425 , H01S5/062 , H01S5/1218 , H01S5/1221 , H01S5/18302 , H01S5/18311 , H01S5/18313 , H01S5/18316 , H01S5/18341 , H01S5/2004 , H01S5/2027 , H01S5/205
摘要： A vertically integrated optoelectronic device allows high- speed data transfer by direct or indirect modulation of the intensity of the emitted light. The device comprises at least one multilayer interference reflector and at least one cavity. In one embodiment the reflector operates as a modulator element controlled by an applied voltage. The stopband edge of the reflector is electrooptically tuned using the quantum confined Stark effect in the vicinity of the cavity mode, resulting in a modulated transmittance of the reflector and, thus, in indirect modulation of light intensity. In another embodiment, the optical field profile in the cavity is affected by the shift of the stopband wavelength, and the device operates as a wavelength- tunable light emitter. In yet another embodiment, two or more refractive index periodicities are integrated in the reflector, suppressing parasitic optical modes and enabling a high-speed direct modulation of the intensity of light emitted by the device.
摘要翻译：垂直集成的光电子器件允许通过直接或间接调制发射光的强度进行高速数据传输。该装置包括至少一个多层干涉反射器和至少一个空腔。在一个实施例中，反射器作为由施加电压控制的调制器元件工作。反射器的阻带边缘在腔模式附近使用量子限制的斯塔克效应进行电光调谐，导致反射器的调制透射率，因此间接调制光强度。在另一个实施例中，空腔中的光场分布受到阻带波长的偏移的影响，并且器件作为波长可调光发射器工作。在另一个实施例中，两个或更多个折射率周期性集成在反射器中，抑制寄生光学模式并使得能够高速直接调制由器件发射的光的强度。

52. 发明申请

WO2007126159A1 SURFACE-EMISSION LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS 审中-公开
标题翻译：表面发射激光阵列，光学扫描装置和图像形成装置
公开(公告)号：WO2007126159A1
公开(公告)日：2007-11-08
申请号：PCT/JP2007/059563
申请日：2007-04-27
申请人： RICOH COMPANY, LTD. , SATO, Shunichi , ITOH, Akihiro , SHOUJI, Hiroyoshi , HAYASHI, Yoshinori , ICHII, Daisuke , HARA, Kei , FUJII, Mitsumi
发明人： SATO, Shunichi , ITOH, Akihiro , SHOUJI, Hiroyoshi , HAYASHI, Yoshinori , ICHII, Daisuke , HARA, Kei , FUJII, Mitsumi
IPC分类号： H01S5/183 , B41J2/44
CPC分类号： B41J2/45 , B41J2/473 , B82Y20/00 , G02B26/123 , H01S5/18311 , H01S5/18358 , H01S5/3432 , H01S5/423
摘要： A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.
摘要翻译：表面发射激光器阵列包括以二维阵列的形式布置的多个表面发射激光二极管元件，其中垂直于从第一方向延伸的直线绘制的多条直线从多个在与第一方向垂直的第二方向上排列的表面发射激光二极管元件在第一方向上以大致相等的间隔形成，多个表面发射激光二极管元件在第一方向上对准，间隔设置为基准并且其中在所述第一方向上排列的所述表面发射激光二极管元件的数量小于在所述第二方向上排列的所述表面发射激光二极管元件的数量。

53. 发明申请

WO2007089042A1 SURFACE-EMITTING LASER DEVICE AND SURFACE-EMITTING LASER ARRAY INCLUDING SAME 审中-公开
标题翻译：表面发射激光器件和表面发射激光阵列，包括它们
公开(公告)号：WO2007089042A1
公开(公告)日：2007-08-09
申请号：PCT/JP2007/052298
申请日：2007-02-02
申请人： RICOH COMPANY, LTD. , SATO, Shunichi , HARA, Kei , JIKUTANI, Naoto
发明人： SATO, Shunichi , HARA, Kei , JIKUTANI, Naoto
IPC分类号： H01S5/183 , H01S5/42
CPC分类号： H01S5/18358 , B41J2/45 , B82Y20/00 , H01S5/02461 , H01S5/18311 , H01S5/3211 , H01S5/34326 , H01S5/423 , H01S2304/04
摘要： A surface-emitting laser device is disclosed that includes a substrate connected to a heat sink; a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate; a first cavity spacer layer formed in contact with the first reflective layer; an active layer formed in contact with the first cavity spacer layer; a second cavity spacer layer formed in contact with the active layer; and a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer. The first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than the thermal conductivity of a semiconductor material forming the second cavity spacer layer.
摘要翻译：公开了一种表面发射激光器件，其包括连接到散热器的衬底; 由衬底上的半导体分布布拉格反射器形成的第一反射层; 形成为与第一反射层接触的第一空腔间隔层; 形成为与所述第一空腔间隔层接触的有源层; 形成为与有源层接触的第二空腔间隔层; 以及由与第二空腔间隔层接触的半导体分布式布拉格反射体形成的第二反射层。第一空腔间隔层包括导热率大于形成第二空腔间隔层的半导体材料的导热率的半导体材料。

54. 发明申请

WO2006136346A1 MONOLITHIC MICRO-LASERS WITH STABILISED POLARISATION 审中-公开
标题翻译：具有稳定极化的单晶微激光器
公开(公告)号：WO2006136346A1
公开(公告)日：2006-12-28
申请号：PCT/EP2006/005835
申请日：2006-06-19
申请人： VRIJE UNIVERSITEIT BRUSSEL , ARIZALETA ARTEAGA, Mikel , PANAYOTOV, Krassimir , THIENPONT, Hugo
发明人： ARIZALETA ARTEAGA, Mikel , PANAYOTOV, Krassimir , THIENPONT, Hugo
IPC分类号： H01S5/183 , H01S5/14 , H01S5/06 , H01S5/062 , H01S5/068 , H01S5/10
CPC分类号： B82Y20/00 , H01S5/0607 , H01S5/06236 , H01S5/0656 , H01S5/06821 , H01S5/1021 , H01S5/142 , H01S5/18302 , H01S5/18311 , H01S5/1833 , H01S5/18355 , H01S5/18386 , H01S5/34313
摘要： A Vertical-Cavity Surface-Emitting Laser has a resonant cavity (3,5) and an external cavity (6,15) formed as a monolithic structure, the external cavity being arranged to provide loss differences for different linearly polarised modes, the loss differences being arranged to provide an output with a stable polarisation state. Compared to the known polarisation stability techniques, this enables a stable polarisation output without the complexity of modification of the VCSEL structure, less sensitivity to small changes of injected current and temperature, and less need for the complex, non monolithic optical parts. Active polarisation control and stabilisation in the same device can be achieved by growing a polarisation dependent mirror on top of the VCSEL and by applying an external field to alter an optical length of the external cavity.
摘要翻译：垂直腔表面发射激光器具有形成为单体结构的谐振腔（3,5）和外腔（6,15），所述外腔被布置成为不同线性偏振模式提供损耗差，损耗差被布置成提供具有稳定偏振状态的输出。与已知的偏振稳定性技术相比，这使得能够实现稳定的偏振输出，而不需要对VCSEL结构进行修改的复杂性，对注入的电流和温度的小变化的敏感性较小，并且对复杂的非单片光学部件的需求较少。可以通过在VCSEL的顶部生长偏振相关的反射镜并施加外部场来改变外部空腔的光学长度来实现同一器件中的主动偏振控制和稳定化。

55. 发明申请

WO2006026610A3 LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION 审中-公开
标题翻译：具有迁移增强外延的低温成长层与基于InGaAsN（Sb）的有源区相邻
公开(公告)号：WO2006026610A3
公开(公告)日：2006-07-06
申请号：PCT/US2005030819
申请日：2005-08-31
申请人： FINISAR CORP , JOHNSON RALPH
发明人： JOHNSON RALPH
IPC分类号： H01S5/00 , H01L21/203 , H01L33/00 , H01S5/183 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01L33/007 , H01S5/18311 , H01S5/18358 , H01S5/3201 , H01S5/3211 , H01S5/32358 , H01S5/32366 , H01S5/3403 , H01S5/3406 , H01S5/342 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S2301/173 , H01S2302/00 , H01S2304/00 , H01S2304/02
摘要： A laser system having migration enhanced epitaxy grown substantially flat layers proximate to quantum wells of an active region. The flat layers may be grown at low temperature. This growth may result in flatter interfaces in the nitrogen containing quantum wells within the active region as well as lower trap densities in adjacent material. This may achieve a reduced trap density as well as reduced segregation resulting in a spectral luminescence profile revealing a single narrow peak with a high level of photoluminescence.
摘要翻译：具有迁移增强外延生长的激光系统在生长区域的量子阱附近生长基本平坦的层。平层可以在低温下生长。这种增长可能导致活性区域内含氮量子阱中更平坦的界面以及相邻材料中更低的陷阱密度。这可以实现降低的陷阱密度以及降低的偏析，导致光谱发光分布图显示具有高水平的光致发光的单个窄峰。

56. 发明申请

WO2005089521A2 HIGH POWER VCSELS WITH TRANSVERSE MODE CONTROL 审中-公开
标题翻译：具有横向模式控制的高功率VCSELS
公开(公告)号：WO2005089521A2
公开(公告)日：2005-09-29
申请号：PCT/US2005/009478
申请日：2005-03-21
申请人： ARIZONA BOARD OF REGENTS , SAMAL, Nigamananda , JOHNSON, Shane , ZHANG, Yong-Hang
发明人： SAMAL, Nigamananda , JOHNSON, Shane , ZHANG, Yong-Hang
IPC分类号： H01S5/183
CPC分类号： H01S5/1833 , H01S5/0207 , H01S5/024 , H01S5/18311 , H01S5/18313 , H01S2301/166 , H01S2301/20
摘要： A single mode high power laser device such as a VCSEL is formed with two oxide apertures, one on each side of the active region or cavity. The sizes of the apertures and the distances from the apertures to the cavity center are chosen or optimum, near-Gaussian current density distribution. The high power of a VCSEL thus formed is improved still more by good heat removal by either formation of a via through the substrate and gold plating on top and bottom of the VCSEL (including the via) or by lifting the VCSEL structure from the substrate and locating it on a heat sink.
摘要翻译：诸如VCSEL的单模高功率激光器件形成有两个氧化物孔，一个在有源区或空腔的每一侧上。选择孔径的尺寸以及从孔到腔中心的距离或最佳的近似高斯电流密度分布。通过在VCSEL（包括通孔）的顶部和底部形成通孔以及通过衬底的顶部和底部的金镀层或者通过从衬底提升VCSEL结构，通过良好的散热来改善如此形成的VCSEL的高功率，以及将其放在散热器上。

57. 发明申请

WO2005055379A1 LICHTEMITTIERENDES HALBLEITERBAUELEMENT MIT EINER SCHUTZDIODE 审中-公开
标题翻译：有保护二极管的半导体发光元件
公开(公告)号：WO2005055379A1
公开(公告)日：2005-06-16
申请号：PCT/DE2004/002384
申请日：2004-10-26
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , ALBRECHT, Tony , BRICK, Peter , PHILIPPENS, Marc , PLAINE, Glenn-Yves
发明人： ALBRECHT, Tony , BRICK, Peter , PHILIPPENS, Marc , PLAINE, Glenn-Yves
IPC分类号： H01S5/026
CPC分类号： H01S5/0261 , H01L23/62 , H01L27/15 , H01L2924/0002 , H01S5/042 , H01S5/06825 , H01S5/18311 , H01S5/40 , H01L2924/00
摘要： Die Erfindung betrifft ein lichtemittierendes Halbleiterbauelement, das eine Halbleiterschichtenfolge (2) mit einem Bereich p-dotierter Halbleiterschichten (4) und n-dotierter Halbleiterschichten (3) enthält, zwischen denen ein erster pn-Übergang (5a,5b) ausgebildet ist. Der pn-Übergang (5a,5b) ist in lateraler Richtung von einem isolierenden Abschnitt (6) in einen lichtemittierenden Abschnitt (7) und eine Schutzdiodenabschnitt (8) unterteilt. Im Bereich des Schutzdiodenabschnitts (8) ist auf dem p-dotierten Bereich (4) eine n-dotierte Schicht (9) aufgebracht, die mit dem p-dotierten Bereich (4) einen als Schutzdiode fungierenden zweiten pn-Übergang (10) ausbildet, wobei der erste pn-Übergang (5b) im Schutzdiodenabschnitt (8) eine größere Fläche als der erste pn-Übergang (5a) im lichtemittierenden Abschnitt (7) aufweist. Der Schutzdiodenabschnitt (8) schützt das lichtemittierende Halbleiterbauelement vor Spannungspulsen durch elektrostatische Entladungen (ESD).
摘要翻译：本发明涉及一种其中具有（4）含有一半导体层序列（2）和n型掺杂的半导体层（3）之间（5A，5B）形成，一第一pn结的p掺杂半导体层上的区域中的半导体发光器件。 pn结的（图5a图5b）是在横向方向上由绝缘部分（6）的发光部（7）和保护二极管部分（8）。在保护二极管部的区域（8）与p型掺杂区上的p掺杂区（4）沉积在n掺杂层（9）（4）具有用作保护二极管第二pn结（10）的形式，其中，所述第一PN结（图5b）中的保护二极管部（8）具有比在发光部（7）的第一pn结（5a）的更大的面积。保护二极管部（8）相对于电压脉冲发光半导体装置保护由于静电放电（ESD）。

58. 发明申请

WO2004006393A3 METHOD OF SELF-ALIGNING AN OXIDE APERTURE WITH AN ANNULAR INTRA-CAVITY CONTACT IN A LONG WAVELENGTH VCSEL 审中-公开
标题翻译：在长波长VCSEL中通过环形腔内接触自对准氧化物孔的方法
公开(公告)号：WO2004006393A3
公开(公告)日：2004-07-01
申请号：PCT/US0321036
申请日：2003-07-03
申请人： OPTICAL COMM PRODUCTS INC
发明人： CHIROVSKY LEO M F , NAONE RYAN LIKEKE , KISKER DAVID , FELD STEWART
IPC分类号： H01S5/042 , H01S5/183 , H01S5/20 , H01L21/00 , H01L21/20
CPC分类号： H01S5/18341 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/18369 , H01S5/2081 , H01S2301/166
摘要： A method of forming a vertical cavity surface emitting laser (100, 600, 900) includes process steps for self-aligning the p-type ohmic contact (118, 518, 932), an oxide current aperture (122, 926a), and a central puck of re-phase material (560a, 936) around the optical axis of the laser.
摘要翻译：一种形成垂直腔表面发射激光器（100,600,900）的方法包括以下步骤：自对准p型欧姆接触（118,518,932），氧化物电流孔径（122,926a）和围绕激光器光轴的再相位材料（560a，936）的中心圆盘。

59. 发明申请

WO2004049528A2 LONG WAVELENGTH VCSEL WITH TUNNEL JUNCTION AND IMPLANT 审中-公开
标题翻译：长波长VCSEL与隧道连接和植入
公开(公告)号：WO2004049528A2
公开(公告)日：2004-06-10
申请号：PCT/US2003/040047
申请日：2003-11-20
申请人： HONEYWELL INTERNATIONAL INC.
发明人： JOHNSON, Ralph, H. , WANG, Tzu-Yu
IPC分类号： H01S5/183
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/1833 , H01S5/18369 , H01S5/18377 , H01S5/2063 , H01S5/3095
摘要： A vertical cavity having a tunnel junction surface emitting laser (VCSEL) for emitting long wavelength light (i.e., 1200 to 1800 nanometers, though it is contemplated that the structures and techniques are applicable to other wavelength VCSELs). The tunnel junction may be isolated with an implant down into the top mirror through the tunnel junction and p-layer and a trench around the VCSEL down to at least past the tunnel junction. The trench may result in reduced capacitance and D.C. isolation of the tunnel junction. The implant is performed after the trench is made. Some of the implant may enter the bottom of the trench into the bottom mirror for some further isolation for the tunnel junction of the VCSEL. Further isolation and some current confinement may be provided with lateral oxidation of a layer below the tunnel junction. Internal trenches may be made from the top of the VCSEL vertically down to the oxidizable layer below the tunneljunction. Oxidation of that layer via these trenches may provide further isolation of the tunnel junction. Also, a bonding pad connected to a contact on the VCSEL with a bridge may have an open trench about their periphery for their isolation. Internal trenches may be placed on the pad and its bridge that go down vertically to the oxidizable layer. Oxidation via these trenches may provide further isolation for the pad and bridge if the latter is present.
摘要翻译：具有用于发射长波长光的隧道结表面发射激光器（VCSEL）的垂直腔（即1200至1800纳米，尽管预期该结构和技术可应用于其它波长VCSEL）。隧道结可以通过隧道结和p层以及VCSEL周围的沟槽沿着至少穿过隧道结的方式与植入物隔离成上反射镜。沟道可能会导致隧道结的电容和直流隔离。在制造沟槽之后执行注入。一些植入物可以进入沟槽的底部进入底部反射镜，以进一步隔离VCSEL的隧道结。可以在隧道结下方的层的侧向氧化提供进一步隔离和一些电流限制。内部沟槽可以从VCSEL的顶部垂直向下到达隧道结下方的可氧化层。通过这些沟槽氧化该层可以进一步隔离隧道结。此外，连接到具有桥接器的VCSEL上的接触件的接合焊盘可以围绕其外围具有敞开的沟槽用于隔离。内部沟槽可以放置在垂直于可氧化层的衬垫及其桥上。通过这些沟槽的氧化可以为衬垫和桥梁提供进一步隔离，如果后者存在的话。

60. 发明申请

WO03043247A2 TUNABLE OPTICAL ADD/DROP MULTIPLEXER WITH MULTI-FUNCTION OPTICAL AMPLIFIERS 审中-公开
标题翻译：带有多功能光学放大器的光电式ADD / DROP多路复用器
公开(公告)号：WO03043247A2
公开(公告)日：2003-05-22
申请号：PCT/US0236598
申请日：2002-11-14
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： PETRICH GALE S , KOLODZIEJSKI LESLIE A
IPC分类号： G02B6/12 , H01S3/063 , H01S3/23 , H01S5/026 , H01S5/0625 , H01S5/0687 , H01S5/10 , H01S5/183 , H01S5/34 , H01S5/40 , H01S5/50 , H04J14/00
CPC分类号： B82Y20/00 , G02B6/12004 , G02B6/12007 , G02B2006/12109 , H01S3/063 , H01S3/2383 , H01S5/02248 , H01S5/026 , H01S5/06256 , H01S5/0687 , H01S5/1032 , H01S5/1071 , H01S5/18311 , H01S5/1833 , H01S5/3412 , H01S5/4025 , H01S5/50
摘要： A photonic circuit includes a tunable drop filter arrangement that includes a plurality of resonators. The drop filter arrangement is tuned to remove a selected frequency from an input data stream from a waveguide. A wavelength sensor coupled to the drop filter to monitor the selected frequency to which the drop filter arrangement has been tuned. A tunable laser presents a new signal of a defined frequency indicative of a signal to be added to the input data stream. A modulator coupled to the tunable laser for receiving the new signal and forming a modulated signal. An add filter arrangement coupled to the modulator for receiving the modulated signal and adding the modulated signal to the data stream.
摘要翻译：光子电路包括包括多个谐振器的可调滴式滤波器装置。滤波器布置被调谐以从波导的输入数据流中移除选定的频率。波长传感器耦合到放大滤波器，以监测已经调谐了滤波器布置的选定频率。可调谐激光器呈现指示要添加到输入数据流的信号的定义频率的新信号。耦合到可调激光器的调制器，用于接收新信号并形成调制信号。耦合到调制器的加法滤波器装置，用于接收调制信号并将调制信号加到数据流中。

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