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51. 发明申请

WO2007108925A3 OXIDATION-STABILIZED CMP COMPOSITIONS AND METHODS 审中-公开
标题翻译：氧化稳定的CMP组合物和方法
公开(公告)号：WO2007108925A3
公开(公告)日：2008-03-13
申请号：PCT/US2007005592
申请日：2007-03-06
申请人： CABOT MICROELECTRONICS CORP
发明人： GRUMBINE STEVEN , ZHOU RENJIE , CHEN ZHAN , CARTER PHILLIP
IPC分类号： C09G1/02 , H01L21/321
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , C23F3/04 , C23F3/06
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives). The invention further provides a method of chemically-mechanically polishing a substrate with the CMP compositions, as well as a method of enhancing the shelf-life of CMP compositions containing an amine and a radical-forming oxidizing agent, in which a radical trapping agent is added to the CMP composition.
摘要翻译：本发明提供一种包含氨基化合物，自由基形成氧化剂，能够抑制氨基化合物自由基诱导氧化的自由基捕获剂的化学机械抛光（CMP）组合物，以及含水载体。自由基捕获剂是羟基取代的多不饱和环状化合物，含氮化合物或其组合。任选地，组合物包含金属氧化物研磨剂（例如二氧化硅，氧化铝，二氧化钛，二氧化铈，氧化锆，或两种或更多种前述研磨剂的组合）。本发明还提供了用CMP组合物对基材进行化学机械抛光的方法，以及提高含有胺和自由基形成氧化剂的CMP组合物的保存期限的方法，其中自由基捕获剂是添加到CMP组合物中。

52. 发明申请

WO2007038077A2 COMPOSITIONS AND METHODS FOR TANTALUM CMP 审中-公开
标题翻译：用于钽CMP的组合物和方法
公开(公告)号：WO2007038077A2
公开(公告)日：2007-04-05
申请号：PCT/US2006/036430
申请日：2006-09-19
申请人： CABOT MICROELECTRONICS CORPORATION
发明人： CARTER, Philip , ZHANG, Jian , GRUMBINE, Steven , DE REGE THESAURO, Francesco
IPC分类号： C09G1/02
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , C23F3/04 , C23F3/06
摘要： A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E 0 ) of not more than 0.5 V relative to a standard hydrogen electrode. The oxidized form comprises at least one pi-conjugated ring, which includes at least one heteroatom directly attached to the ring. The heteroatom can be a N, O, S or a combination thereof. In a method embodiment, a CMP composition comprising an abrasive, and organic oxidizer having an E0 of not more than 0.7 V relative to a standard hydrogen electrode, and a liquid carrier therefor, is utilized to polish a tantalum-containing surface of a substrate, by abrading the surface of the substrate with the composition, preferably with the aid of a polishing pad.
摘要翻译：适用于钽化学机械抛光（CMP）的组合物包含研磨剂，有机氧化剂和用于其的液体载体。相对于标准氢电极，有机氧化剂具有不超过0.5V的标准氧化还原电势（E 0 / sup）。氧化形式包含至少一个π-共轭环，其包含至少一个直接连接到环上的杂原子。杂原子可以是N，O，S或其组合。在一个方法实施方案中，使用包含研磨剂和相对于标准氢电极具有不超过0.7V的E0的有机氧化剂的CMP组合物及其液体载体用于抛光基材的含钽表面，通过用组合物研磨基材表面，优选借助于抛光垫。

53. 发明申请

WO2006105150A2 METAL CMP PROCESS ON ONE OR MORE POLISHING STATIONS USING SLURRIES WITH OXIDIZERS 审中-公开
标题翻译：金属CMP工艺在一个或多个抛光站使用流动与氧化剂
公开(公告)号：WO2006105150A2
公开(公告)日：2006-10-05
申请号：PCT/US2006/011387
申请日：2006-03-29
申请人： APPLIED MATERIALS, INC. , WANG, Shi-Ping , WOHLERT, Martin S. , DUBOUST, Alain , JIA, Renhe , LIU, Feng Q. , TIAN, Yuan A. , CHEN, Liang-Yuh , TSAI, Stan D. , HSU, Wei-Yung
发明人： WANG, Shi-Ping , WOHLERT, Martin S. , DUBOUST, Alain , JIA, Renhe , LIU, Feng Q. , TIAN, Yuan A. , CHEN, Liang-Yuh , TSAI, Stan D. , HSU, Wei-Yung
IPC分类号： C03C15/00 , H01L21/302 , B44C1/22 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/04 , C23F3/06 , H01L21/32125 , H01L21/7684
摘要： Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. In one aspect, a full sequence electrochemical mechanical planarization technique is provided. In another aspect, a hybrid planarization technique using combination of at least one chemical mechanical polishing process and at least one electrochemical mechanical polishing process is provided. In addition, a multi-step polishing process for polishing a substrate surface using at least two oxidizers in one or more polishing composition is described. The polishing composition may be used in the full sequence or the hybrid planarization technique. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization defects.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料和阻挡材料的方法。一方面，提供了全序列电化学机械平面化技术。在另一方面，提供了使用至少一种化学机械抛光工艺和至少一种电化学机械抛光工艺的组合的混合平面化技术。此外，描述了在一种或多种研磨组合物中使用至少两种氧化剂来研磨衬底表面的多步抛光方法。抛光组合物可以以全序或混合平面化技术使用。本文所述的抛光组合物和方法改善了材料从衬底表面的有效去除速率，同时减小了平坦化缺陷。

54. 发明申请

WO2006073156A1 研磨用スラリー审中-公开
标题翻译：抛光浆
公开(公告)号：WO2006073156A1
公开(公告)日：2006-07-13
申请号：PCT/JP2006/300036
申请日：2006-01-05
申请人：ニッタ・ハース株式会社 , 太田慶治 , 田中利香 , 新田浩士 , 森岡善隆
发明人：太田慶治 , 田中利香 , 新田浩士 , 森岡善隆
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
CPC分类号： C09K3/1463 , C09G1/02 , C23F3/06 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要：　本発明の目的は、被研磨物である半導体ウェハのディッシングやエロージョンを低減できる研磨用スラリーを提供することである。酸化剤を含有するとともに、２種以上の研磨砥粒として、ヒュームドシリカおよびコロイダルシリカを含有し、ヒュームドシリカとコロイダルシリカとの混合比によって、タングステンなどの金属膜の研磨レートとＳｉＯ２などの絶縁膜（酸化膜）の研磨レートの比（選択比）を調整できるようにし、ディッシングやエロージョンを低減できるようにしている。
摘要翻译：公开了一种抛光浆料，其能够减少作为待抛光对象的半导体晶片的凹陷或腐蚀。具体公开了含有氧化剂和两种或更多种磨粒，即热解法二氧化硅和胶体二氧化硅的抛光浆料。诸如钨膜的金属膜的抛光速率与诸如SiO 2膜之类的绝缘膜（氧化物膜）的抛光速率之间的比率（选择率）可以通过改变热解法二氧化硅和胶体二氧化硅之间的混合比可以降低，从而可以减少半导体晶片的凹陷或腐蚀。

55. 发明申请

WO2006065347A2 POLISHING SOLUTIONS 审中-公开
标题翻译：抛光解决方案
公开(公告)号：WO2006065347A2
公开(公告)日：2006-06-22
申请号：PCT/US2005/038372
申请日：2005-10-25
申请人： 3M INNOVATIVE PROPERTIES COMPANY
发明人： KOLLODGE, Jeffrey, S.
IPC分类号： C09G1/02 , H01L21/321
CPC分类号： C23F3/06 , C09G1/02
摘要： A polishing solution containing two different organic acids is described. The first organic acid is a multifunctional amino acid. The second organic acid is selected from a simple carboxylic acid, a hydroxy-carboxylic acid, and combinations thereof. The simple carboxylic acid may be a monofunctional or a multifunctional simple carboxylic acid. Polishing solutions containing two different organic acids providing enhanced removal rates are also described. Methods of polishing surfaces, including metal surfaces comprising copper, are also described.
摘要翻译：描述了含有两种不同有机酸的抛光溶液。第一种有机酸是多官能氨基酸。第二有机酸选自简单的羧酸，羟基羧酸及其组合。简单的羧酸可以是单官能的或多官能的单羧酸。还描述了含有提供增强的去除速率的两种不同有机酸的抛光溶液。还描述了抛光表面的方法，包括包含铜的金属表面。

56. 发明申请

WO2005033234A3 NOVEL SLURRY FOR CHEMICAL MECHANICAL POLISHING OF METALS 审中-公开
标题翻译：金属化学机械抛光的新型浆料
公开(公告)号：WO2005033234A3
公开(公告)日：2006-01-26
申请号：PCT/US2004032262
申请日：2004-09-30
申请人： INTEL CORP , FELLER DANIEL A , BARNS CHRIS E
发明人： FELLER DANIEL A , BARNS CHRIS E
IPC分类号： C09G1/02 , C09K3/14 , C23F3/06 , H01L21/02 , H01L21/3105 , H01L21/321 , H01L21/768
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1463 , C23F3/06 , H01L21/3212 , H01L28/65
摘要： A slurry for removing metals, useful in the manufacture of integrated circuits generally, and for the chemical mechanical polishing of noble metals particularly, may be formed by combining periodic acid, an abrasive, and a buffer system, wherein the pH of the slurry is between about (4) to about (8).
摘要翻译：可以通过组合高碘酸，研磨剂和缓冲体系来形成通常用于制造集成电路和用于贵金属的化学机械抛光的金属的浆料，其中浆料的pH在约（4）〜（8）。

57. 发明申请

WO2005012451A2 SLURRIES AND METHODS FOR CHEMICAL-MECHANICAL PLANARIZATION OF COPPER 审中-公开
标题翻译：铜的化学机械平面化的方法和方法
公开(公告)号：WO2005012451A2
公开(公告)日：2005-02-10
申请号：PCT/US2004/024143
申请日：2004-07-27
申请人： CLIMAX ENGINEERED MATERIALS, LLC
发明人： BABU, S., V. , HEGDE, Sharath , JHA,Sunil , PATRI, Udaya, B. , HONG, Youngki
IPC分类号： C09G1/02
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1463 , C23F3/06
摘要： The claimed invention involves a novel aqueous slurry for chemical-mechanical planarization that is effective for polishing copper at high polish rates. The aqueous slurry according to the present invention comprises particles of MoO 2 or MoO 3 and an oxidizing agent. A method for polishing copper by chemical-mechanical planarization includes contacting copper with a polishing pad and an aqueous slurry comprising particles Of MoO 2 or MoO 3 and an oxidizing agent.
摘要翻译：所要求保护的发明涉及用于化学 - 机械平面化的新型含水浆料，其有效地以高抛光速率抛光铜。根据本发明的含水浆料包含MoO 2或MoO 3颗粒和氧化剂。通过化学机械平面化抛光铜的方法包括使铜与抛光垫接触，以及包含MoO 2或MoO 3颗粒和氧化剂的含水浆料。

58. 发明申请

WO2004085706A1 SOLUTION FOR ETCHING COPPER SURFACES AND METHOD OF DEPOSITING METAL ON COPPER SURFACES 审中-公开
标题翻译：用于蚀刻铜表面的方法和在铜表面上沉积金属的方法
公开(公告)号：WO2004085706A1
公开(公告)日：2004-10-07
申请号：PCT/EP2004/002702
申请日：2004-03-16
申请人： ATOTECH DEUTSCHLAND GMBH , MAHLKOW, Hartmut , SPARING, Christian
发明人： MAHLKOW, Hartmut , SPARING, Christian
IPC分类号： C23F1/18
CPC分类号： C23C18/1844 , C23C18/31 , C23C18/50 , C23F1/18 , C23F3/06 , H01L2924/0002 , H05K3/244 , H05K3/383 , H01L2924/00
摘要： A solution for etching copper or a copper alloy for producing a copper surface having the brightest possible finish for a metallization that is to follow is described. The solution has a pH on the order of 4 or less and is free of sulfate ions. It comprises: a) at least one oxidizing agent selected from the group comprising hydrogen peroxide and peracids, b) at least one substance selected from the group comprising aromatic sulfonic acids and salts of the aromatic sulfonic acids and optionally c) at least one N-heterocyclic compound. Further a method for depositing metal onto the surface of copper or a copper alloy is described. Said method comprises the following method steps: a) contacting the surface with the solution in accordance with the invention and b) coating the surface with at least one metal. The solution and the method are especially suited in the production of electric circuit carriers, more specifically for semiconductor manufacturing.
摘要翻译：描述了用于蚀刻铜或铜合金的方法，用于制造具有尽可能光亮的用于金属化的精加工的铜表面。溶液的pH值在4以下，不含硫酸根离子。它包括：a）至少一种选自过氧化氢和过酸的氧化剂，b）至少一种选自芳族磺酸和芳族磺酸盐的物质，以及任选的c）至少一种N- 杂环化合物。另外描述了一种将金属沉积在铜或铜合金表面上的方法。所述方法包括以下方法步骤：a）使表面与根据本发明的溶液接触，以及b）用至少一种金属涂覆表面。该方案和方法特别适用于生产电路载体，更具体地说用于半导体制造。

59. 发明申请

WO2004067660A1 SELECTIVE BARRIER METAL POLISHING SOLUTION 审中-公开
标题翻译：选择性障碍金属抛光解决方案
公开(公告)号：WO2004067660A1
公开(公告)日：2004-08-12
申请号：PCT/US2004/001132
申请日：2004-01-16
申请人： ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.
发明人： LIU, Zhendong , BARKER, Ross, E., II
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , C23F3/06 , H01L21/3212 , H01L21/7684
摘要： The polishing solution is useful for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisting of nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid for adjusting a pH level of the polishing solution to less than 3, at least 0.0025 benzotriazole inhibitor for reducing removal rate of the interconnect metals, 0 to 10 surfactant, 0.01 to 10 colloidal silica having an average particle size of less than 50 nm and balance water and incidental impurities. The polishing solution has a tantalum nitride material to copper selectivity of at least 3 to 1 and a tantalum nitride to TEOS selectivity of at least 3 to 1.
摘要翻译：抛光溶液可用于在存在互连金属和电介质的情况下去除阻挡材料。抛光溶液以重量百分比计包含0.1至10种过氧化氢，至少一种选自硝酸，硫酸，盐酸和磷酸的pH调节剂，用于将抛光溶液的pH值调节至小于 3，至少含有0.0025的苯并三唑抑制剂，用于降低互连金属的去除速率，0至10表面活性剂，0.01至10个平均粒度小于50nm的胶体二氧化硅，余量为水和附带杂质。抛光溶液的氮化钽材料至铜选择性为至少3比1，氮化钽至TEOS选择性为至少3比1。

60. 发明申请

WO03050864A3 METHOD FOR COPPER CMP USING POLYMERIC COMPLEXING AGENTS 审中-公开
标题翻译：使用聚合复合材料的铜CMP的方法
公开(公告)号：WO03050864A3
公开(公告)日：2003-09-12
申请号：PCT/US0241453
申请日：2002-12-03
申请人： CABOT MICROELECTRONICS CORP
发明人： SCHROEDER DAVID J , CARTER PHILLIP , CHAMBERLAIN JEFFREY P , MILLER KYLE , CHERIAN ISAAC K
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/321
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an abrasive, and a negatively charged polymer or copolymer, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the substrate to polish the metal layer of the substrate. The negatively charged polymer or copolymer comprises one or more monomers selected from sulfonic acids, sulfonates, sulfates, phosphonic acids, phosphonates, and phosphates, has a molecular weight of 20,000 g/mol or more, and coats at least a portion of the abrasive such that the abrasive has a zeta potential value that is lowered upon interaction of the negatively charged polymer or copolymer with the abrasive.
摘要翻译：本发明提供了一种抛光包含铜的金属层的衬底的方法。该方法包括以下步骤：（i）提供包括液体载体，抛光垫，研磨剂和带负电荷的聚合物或共聚物的化学机械抛光系统，（ii）使基底与抛光系统接触，和（iii ）研磨衬底的至少一部分以抛光衬底的金属层。带负电荷的聚合物或共聚物包含一种或多种选自磺酸，磺酸盐，硫酸盐，膦酸，膦酸盐和磷酸盐的单体，其分子量为20,000g / mol或更高，并且涂覆至少一部分研磨剂研磨剂具有在带负电荷的聚合物或共聚物与研磨剂相互作用时降低的ζ电位值。

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