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51. 发明申请

WO2005104634A3 METHOD AND SYSTEM FOR PERFORMING ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于实现原子层沉积的方法和系统
公开(公告)号：WO2005104634A3
公开(公告)日：2006-11-02
申请号：PCT/US2005003304
申请日：2005-02-03
申请人： TOKYO ELECTRON LTD , STRANG ERIC J
发明人： STRANG ERIC J
IPC分类号： C23C16/00 , C23C16/22 , C23C16/509 , H01J37/32 , H05H1/24
CPC分类号： C23C16/45542 , C23C16/45525 , C23C16/45544 , C23C16/5096 , H01J37/32082 , H01J37/32449 , H01J37/32935
摘要： A plasma processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first gas and a second gas to the process chamber. The system includes a controller that controls the gas injection system to continuously flow a first gas flow to the process chamber and to pulse a second gas flow to the process chamber at a first time. The controller pulses a RF power to the substrate holder at a second time. A method of operating a plasma processing system is provided that includes adjusting a background pressure in a process chamber, where the background pressure is established by flowing a first gas flow using a gas injection system, and igniting a processing plasma in the process chamber. The method includes pulsing a second gas flow using the gas injection system at a first time, and pulsing a RF power to a substrate holder at a second time.
摘要翻译：一种用于执行原子层沉积（ALD）的等离子体处理系统，包括处理室，设置在处理室内的衬底保持器，以及被配置为向处理室提供第一气体和第二气体的气体注入系统。该系统包括控制器，其控制气体注入系统以将第一气流连续地流动到处理室，并且在第一时间将第二气流脉冲到处理室。控制器在第二时间将RF功率脉冲到衬底保持器。提供了一种操作等离子体处理系统的方法，其包括调整处理室中的背景压力，其中通过使用气体注入系统流动第一气流并且点燃处理室中的处理等离子体来建立背景压力。该方法包括在第一时间使用气体注入系统脉动第二气流，并且在第二时间将RF功率脉冲到衬底保持器。

52. 发明申请

WO2006104741A1 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM HAVING REDUCED CONTAMINATION 审中-公开
标题翻译：具有减少污染的等离子体增强原子沉积沉积体系
公开(公告)号：WO2006104741A1
公开(公告)日：2006-10-05
申请号：PCT/US2006/009984
申请日：2006-03-20
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , ISHIZAKA, Tadahiro
发明人： ISHIZAKA, Tadahiro
IPC分类号： C23C16/458 , C23C16/44 , C23C16/455 , H01L21/00
CPC分类号： C23C16/45542 , C23C16/4401 , C23C16/45525 , C23C16/45544 , C23C16/4583 , H01L21/67155 , H01L21/67751
摘要： A plasma enhanced atomic layer deposition (PEALD) system (101 ) is described, wherein the system comprises a processing space (212) and a high vacuum, ultra-clean transfer space (216). During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate (125) is exposed to the high vacuum space. Processing gases are introduced sequentially and alternately to the process chamber (110) and the pressures and gas flows within, to and from, and between the process chamber (110) and the high vacuum transfer space (216) are controlled to keep the transfer space ultra-clean.
摘要翻译：描述了等离子体增强原子层沉积（PEALD）系统（101），其中该系统包括处理空间（212）和高真空超洁净传送空间（216）。在加工过程中，形成薄保形膜的基板暴露于处理空间。在衬底转移期间，衬底（125）暴露于高真空空间。处理气体被顺序地和交替地引入处理室（110），并且压力和气体在处理室（110）和高真空传送空间（216）之内，之中和之间以及之间流动被控制以保持传送空间超洁净。

53. 发明申请

WO2006101646A1 METHOD FOR FORMING A RUTHENIUM METAL LAYER ON A PATTERNED SUBSTRATE 审中-公开
标题翻译：在图案基板上形成金属层的方法
公开(公告)号：WO2006101646A1
公开(公告)日：2006-09-28
申请号：PCT/US2006/006031
申请日：2006-02-21
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , MATSUDA, Tsukasa
发明人： MATSUDA, Tsukasa
IPC分类号： H01L21/768 , H01L23/532 , C23C16/18 , C23C16/02 , C23C16/455
CPC分类号： H01L21/28556 , C23C16/18 , C23C16/4481 , C23C16/45542 , C23C16/52 , H01L21/28562 , H01L21/76846 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method (300) for forming a ruthenium metal layer (560) includes providing a patterned substrate (25, 125, 500) in a process chamber (10, 110) of a deposition system(1, 100), where the patterned substrate (25, 125, 500) contains one or more vias or trenches, or combinations thereof, depositing a first ruthenium metal layer (540) on the substrate (25, 125, 500) in an atomic layer deposition process, and depositing a second ruthenium metal layer (550) on the first ruthenium metal layer (540) in a thermal chemical vapor deposition process. The deposited ruthenium metal layer (560) can be used as a diffusion barrier layer, a seed layer for electroplating, or both.
摘要翻译：用于形成钌金属层（560）的方法（300）包括在沉积系统（1,100）的处理室（10,110）中提供图案化衬底（25,125,500），其中所述图案化衬底 25，125，500）包含一个或多个通孔或沟槽或其组合，在原子层沉积工艺中在衬底（25,125,500）上沉积第一钌金属层（540），并沉积第二钌金属层（550）在热化学气相沉积工艺中的第一钌金属层（540）上。沉积的钌金属层（560）可以用作扩散阻挡层，用于电镀的种子层或两者。

54. 发明申请

WO2006014034A1 REMOTE PLASMA ATOMIC LAYER DEPOSITION APPARATUS AND METHOD USING DC BIAS 审中-公开
标题翻译：远程等离子体原子层沉积装置和使用直流偏置的方法
公开(公告)号：WO2006014034A1
公开(公告)日：2006-02-09
申请号：PCT/KR2004/001962
申请日：2004-08-04
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY , JEON, Hyeong-Tag , KIM, Un-Jung , KIM, Ju-Youn , KIM, Jin-Woo
发明人： JEON, Hyeong-Tag , KIM, Un-Jung , KIM, Ju-Youn , KIM, Jin-Woo
IPC分类号： H01L21/20
CPC分类号： C23C16/45542 , C23C16/452 , C23C16/45525 , C23C16/45544 , C23C16/45565 , C23C16/45574 , C30B25/105 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H05H3/02
摘要： A conventional plasma applied ALD apparatus has a problem in that physical shock is directly imposed on a substrate and a thin film thereby damaging the thin film. Further, many reports have said that since an apparatus for controlling plasma energy is not arranged well, the thin film is not formed uniformly due to plasma nonuniformity. Therefore, there is provided a remote plasma atomic layer deposition apparatus using a DC bias comprising: a reaction chamber having an inner space; a substrate supporting body on which a substrate on which a thin film is to be formed is loaded arranged at one side of the inner space of the reaction chamber; a remote plasma generating unit arranged outside of the reaction chamber to supply a remote plasma into the inner space of the reaction chamber; a DC bias unit controlling energy of the remote plasma; and a source gas supply unit supplying a source gas for forming the thin film into the reaction chamber.
摘要翻译：常规的等离子体涂覆的ALD装置具有直接施加在基板和薄膜上的物理冲击从而损坏薄膜的问题。此外，许多报道说，由于用于控制等离子体能量的装置不能很好地布置，所以由于等离子体不均匀性而不能均匀地形成薄膜。因此，提供了使用DC偏压的远程等离子体原子层沉积装置，包括：具有内部空间的反应室; 在反应室的内部空间的一侧设置有基板支撑体，在基板支撑体上形成有要形成薄膜的基板，远程等离子体生成单元，其布置在反应室的外部，以将远程等离子体供应到反应室的内部空间中; DC偏压单元，控制远程等离子体的能量; 以及源气体供给单元，其将用于将薄膜形成的源气体供给到反应室中。

55. 发明申请

WO2005043623A2 METHOD FOR FORMING A DIELECTRIC ON A METALLIC LAYER AND CAPACITOR ASSEMBLY 审中-公开
标题翻译：一种用于形成电介质上的含铜金属化和电容器装置
公开(公告)号：WO2005043623A2
公开(公告)日：2005-05-12
申请号：PCT/EP2004052594
申请日：2004-10-20
申请人： INFINEON TECHNOLOGIES AG , GSCHWANDTNER ALEXANDER , HOLZ JUERGEN , SCHRENK MICHAEL
发明人： GSCHWANDTNER ALEXANDER , HOLZ JUERGEN , SCHRENK MICHAEL
IPC分类号： C23C14/06 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/511 , H01L21/02 , H01L21/318 , H01L21/768 , H01L23/522 , H01L27/08
CPC分类号： C23C16/45542 , C23C16/345 , C23C16/45523 , C23C16/511 , H01L21/318 , H01L21/3185 , H01L21/76807 , H01L23/5223 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method that permits the direct application of a dielectric layer to a metallic layer containing copper. According to said method, two process gases (26, 28) are excited by means of respectively different plasma powers for each substrate surface or one of the process gases (26) is excited by means of a plasma and the other process gas (28) is not excited.
摘要翻译：解释措施，除其他外，允许电介质层的上的含铜金属的直接应用。因此，两种处理气体是（26,28），兴奋与每个衬底表面相互不同的等离子体功率或处理气体（26）被激发的等离子和其它工艺气体（28）不被激励。

56. 发明申请

WO2004066377A1 被処理基板上にシリコン窒化膜を形成するＣＶＤ方法审中-公开
标题翻译：在衬底上形成氮化硅膜的CVD方法
公开(公告)号：WO2004066377A1
公开(公告)日：2004-08-05
申请号：PCT/JP2004/000370
申请日：2004-01-19
申请人：東京エレクトロン株式会社 , 加藤寿 , 織戸康一 , 菊地宏之 , 真久眞吾
发明人：加藤寿 , 織戸康一 , 菊地宏之 , 真久眞吾
IPC分类号： H01L21/318
CPC分类号： C23C16/45542 , C23C16/345 , C23C16/46 , H01L21/3185
摘要：このＣＶＤ方法では、被処理基板（Ｗ）上にシリコン窒化膜を形成する。この方法は、基板（Ｗ）を処理容器（８）内に収納して処理温度に加熱する工程と、処理温度に加熱された基板（Ｗ）に対してヘキサエチルアミノジシランガスとアンモニアガスとを含む処理ガスを供給し、基板（Ｗ）上にシリコン窒化膜を堆積する工程と、を含む。
摘要翻译：一种用于在基板（W）上形成氮化硅膜的CVD方法，包括在处理容器（8）中容纳基板（W）并将其加热至处理温度的步骤，以及将含有六乙基氨基二硅烷气体的处理气体和加热到处理温度的衬底（W）上的氨气，以在衬底（W）上沉积氮化硅膜。

57. 发明申请

WO02046489A1 METHOD FOR INTEGRATED IN-SITU CLEANING AND SUBSEQUENT ATOMIC LAYER DEPOSITION WITHIN A SINGLE PROCESSING CHAMBER 审中-公开
标题翻译：一体化处理室内集成式现场清洗和后续原子层沉积的方法
公开(公告)号：WO02046489A1
公开(公告)日：2002-06-13
申请号：PCT/US2001/044300
申请日：2001-11-26
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/511 , H01J37/32 , H01L21/285 , H01L21/768 , C23C14/02 , C08J7/18 , C23C16/00 , C23C16/06 , C30B25/00 , C30B25/08 , C30B25/14
CPC分类号： C23C16/45525 , C23C16/0227 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/46 , C23C16/466 , C23C16/481 , C23C16/511 , H01J37/3244 , H01J37/32449 , H01J37/32862 , H01L21/28562 , H01L21/76814 , H01L21/76838
摘要： A system and sequential method for integrated, in-situ modification of a substrate (181) in and subsequent atomic layer deposition of a thin film onto the substrate (181) in an evacutated chamber comprising introducing at least one feed gas (130) into the chamber; generating a plasma (172) from the feed gas; exposing the substrate to ions (177) and/or radicals (176) formed by the plasma; modulating any ions; reacting the substrate with the modulated ions and/or radicals to remove any contaminants for the substate and producing a modified substrate. These steps are followed, in-situ, by performing an atomic layer deposition of a thin film onto the modified substrate in the chamber.
摘要翻译：一种系统和顺序方法，用于在真空室中将薄膜原位层沉积到衬底（181）上和之后的衬底（181）的原位修改，包括将至少一个进料气体（130）引入到室; 从所述进料气体产生等离子体（172）; 将衬底暴露于由等离子体形成的离子（177）和/或自由基（176）; 调节任何离子; 使基底与调制的离子和/或自由基反应以除去子状态的任何污染物并产生改性的底物。通过在腔室中将薄膜原子层沉积到改性基底上，就可以实现这些步骤。

58. 发明申请

WO01029280A1 DEPOSITION OF TRANSITION METAL CARBIDES 审中-公开
标题翻译：过渡金属碳化物的沉积
公开(公告)号：WO01029280A1
公开(公告)日：2001-04-26
申请号：PCT/US2000/028537
申请日：2000-10-16
IPC分类号： C23C16/08 , C23C16/32 , C23C16/44 , C23C16/455 , C30B25/02 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/285 , H01L21/768 , H01L23/532 , H01L21/00
CPC分类号： C30B29/38 , C23C16/08 , C23C16/32 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45542 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/28568 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76876 , H01L23/53238 , H01L23/53252 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers (6) within integrated circuits having trench (1) and via (2) openings.
摘要翻译：本发明一般涉及沉积过渡金属碳化物薄膜的方法。特别地，本发明涉及通过原子层沉积（ALD）沉积过渡金属碳化物薄膜的方法，其中过渡金属源化合物和碳源化合物交替地提供给基底。公开了各种金属和碳源气体。这些方法适用于在半导体制造中形成金属碳化物薄膜，特别是在具有沟槽（1）和通孔（2））的集成电路中形成薄的导电扩散阻挡层（6）。

59. 发明申请

WO2018089534A1 METHOD FOR HIGH MODULUS ALD SIO2 SPACER 审中-公开
标题翻译：高模量ALD SIO2间隔器的方法
公开(公告)号：WO2018089534A1
公开(公告)日：2018-05-17
申请号：PCT/US2017/060692
申请日：2017-11-08
申请人： LAM RESEARCH CORPORATION
发明人： BALDASSERONI, Chloe , SWAMINATHAN, Shankar
IPC分类号： H01L21/027 , H01L21/3065 , H01L21/67 , H01L21/768
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/45542 , C23C16/56 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/02348 , H01L21/0332 , H01L21/0337 , H01L21/31144
摘要： Methods and apparatuses for forming high modulus silicon oxide spacers using atomic layer deposition are provided. Methods involve depositing at high temperature, using high plasma energy, and post-treating deposited silicon oxide using ultraviolet radiation. Such silicon oxide spacers are suitable for use as masks in multiple patterning applications to prevent pitch walking.
摘要翻译：提供了使用原子层沉积形成高模量氧化硅隔离物的方法和装置。方法涉及使用高等离子体能量在高温下沉积，并使用紫外线辐射对沉积的氧化硅进行后处理。这种氧化硅隔离物适合在多种图案化应用中用作掩模，以防止俯仰行走。

60. 发明申请

WO2017044690A1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS 审中-公开
标题翻译：沉积金属或金属硅化物薄膜和成膜的方法
公开(公告)号：WO2017044690A1
公开(公告)日：2017-03-16
申请号：PCT/US2016/050874
申请日：2016-09-09
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： LEI, Xinjian , KIM, Moo-Sung , LI, Jianheng
IPC分类号： C23C16/34 , C23C16/36 , C23C16/455 , C23C16/30
CPC分类号： C23C16/45553 , C23C16/303 , C23C16/345 , C23C16/36 , C23C16/45531 , C23C16/45542
摘要： Described herein are conformal films and methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride dielectric film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one metal precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.
摘要翻译：本文描述了用于形成保形基团4,5,6,13金属或准金属掺杂的氮化硅介电膜的保形膜和方法。一方面，提供一种形成氮化硅铝膜的方法，包括以下步骤：在反应器中提供衬底; 向所述反应器中引入至少一种金属前体，其在所述基底的至少一部分表面上反应以提供化学吸附层; 用吹扫气净化反应器; 向所述反应器中引入有机氨基硅烷前体，以在所述基材的至少一部分表面上反应以提供化学吸附层; 将包含氮气和惰性气体的等离子体引入反应器中以与化学吸附层的至少一部分反应并提供至少一个反应性位点，其中以约0.01至约1.5W / cm 2的功率密度产生等离子体; 并且可选地用惰性气体吹扫反应器; 并且其中重复这些步骤直到得到所需的氮化铝膜厚度。

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