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51. 发明申请

WO2014201627A1 APPARATUS AND METHOD FOR TAPING ADHESIVE FILM ON SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：用于在半导体基板上贴合粘合膜的装置和方法
公开(公告)号：WO2014201627A1
公开(公告)日：2014-12-24
申请号：PCT/CN2013/077437
申请日：2013-06-19
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： WANG, Hui , WANG, Xi , ZHAO, Hu , WANG, Jun
IPC分类号： H01L21/00 , H01L21/67
CPC分类号： H01L21/67132
摘要： The present invention discloses an apparatus and a method for taping adhesive film on semiconductor substrate. In one embodiment, the apparatus includes: a support arm holding a semiconductor substrate; a stage loading and locating an adhesive film above the semiconductor substrate; a rotating plate having a linear rail and being positioned over the adhesive film; a linear actuator mounted on the linear rail and being capable of moving along the linear rail; a gas nozzle supplying taping gas onto the adhesive film for pressing the adhesive film onto the adhesive side of the semiconductor substrate, the gas nozzle fixed on the linear actuator and moving together with the linear actuator; and a rotating actuator connected to the rotating plate and driving the rotating plate to rotate in a plane parallel to the plane of the semiconductor substrate.
摘要翻译：本发明公开了一种用于在半导体衬底上胶粘粘合剂膜的设备和方法。在一个实施例中，该装置包括：保持半导体衬底的支撑臂; 载置和定位半导体衬底上方的粘合剂膜的载物台; 旋转板，其具有线性轨道并且位于所述粘合膜上方; 线性致动器，其安装在线性轨道上并且能够沿着线性轨道移动; 一个气体喷嘴，用于将粘合剂膜粘合到粘合剂膜上，用于将粘合剂膜压在半导体衬底的粘合剂侧上，气体喷嘴固定在线性致动器上并与线性致动器一起移动; 以及旋转致动器，其连接到所述旋转板并驱动所述旋转板在平行于所述半导体衬底的平面的平面中旋转。

52. 发明申请

WO2013173999A1 LOADLOCK CHAMBER AND METHOD FOR TREATING SUBSTRATES USING THE SAME 审中-公开
标题翻译：用于处理基板的装载室和方法
公开(公告)号：WO2013173999A1
公开(公告)日：2013-11-28
申请号：PCT/CN2012/075992
申请日：2012-05-24
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , HE, Zenghua , FANG, Zhiyou , JIA, Zhaowei , WANG, Hui
发明人： WANG, Jian , HE, Zenghua , FANG, Zhiyou , JIA, Zhaowei , WANG, Hui
IPC分类号： H01L21/677 , H01L21/673 , H01L21/68
CPC分类号： H01L21/67109 , H01L21/67201
摘要： A load lock chamber (100) and methods for treating multiple substrates using the same are provided. The load lock chamber (100) includes a chamber housing (10), a chuck (20), a support frame (30) and at least one elevating mechanism (40). The chamber housing (10) has a first vacuum valve (11) and a second vacuum valve (12), via which the substrates are loaded in the chamber housing (10) or unloaded out of the chamber housing (10). The chuck (20) has a plate portion (21) for holding the substrates. The plate portion (21) is received in the chamber housing (10) and defines at least two notches (23). The support frame (30) received in the chamber housing (10) has at least two connecting portions (32). A stack of support platforms (33) protrudes from either of the connecting portions (32). Every support platform (33) has a placing portion (332) arranged in the notch (23) of the chuck (20). The placing portions (332) which are in the same plane are parallel with the plate portion (21) and capable of holding a piece of the substrates. The elevating mechanism (40) is used for raising or lowering the connecting portions (32) of the support frame (30).
摘要翻译：提供了一种负载锁定室（100）以及使用该负载锁定室处理多个基板的方法。负载锁定室（100）包括室室（10），卡盘（20），支撑框架（30）和至少一个升降机构（40）。腔室壳体（10）具有第一真空阀（11）和第二真空阀（12），基板通过该第一真空阀（11）和第二真空阀（12）装载到腔室壳体（10）中或从腔室壳体（10）中卸载。卡盘（20）具有用于保持基板的板部（21）。板部分（21）被容纳在腔室（10）中并限定至少两个切口（23）。容纳在腔室（10）中的支撑框架（30）具有至少两个连接部分（32）。一组支撑平台（33）从连接部分（32）中的任一个突出。每个支撑平台（33）具有布置在卡盘（20）的凹口（23）中的放置部分（332）。位于同一平面中的放置部分（332）平行于板部分（21）并且能够保持一片基片。升降机构（40）用于升降支撑框架（30）的连接部（32）。

53. 发明申请

WO2012174732A1 METHODS AND APPARATUS FOR UNIFORMLY METALLIZATION ON SUBSTRATES 审中-公开
标题翻译：用于基底上均匀金属化的方法和装置
公开(公告)号：WO2012174732A1
公开(公告)日：2012-12-27
申请号：PCT/CN2011/076262
申请日：2011-06-24
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Hui , MA, Yue , HE, Chuan , WANG, Xi
发明人： WANG, Hui , MA, Yue , HE, Chuan , WANG, Xi
IPC分类号： C25D5/02 , C25D5/16
CPC分类号： C25D21/10 , C25D5/08 , C25D5/18 , C25D5/20 , C25D7/12 , C25D7/123 , C25D17/00 , C25D17/001 , C25D17/002 , C25D17/008 , C25D17/06 , H01L21/02 , H01L21/67138
摘要： An apparatus for substrate metallization from electrolyte is provided. The apparatus comprises: an immersion cell containing metal salt electrolyte; at least one electrode connecting to at least one power supply; an electrically conductive substrate holder holding at least one substrate to expose a conductive side of the substrate to face the at least one electrode; an oscillating actuator for oscillating the substrate holder with an amplitude and a frequency; at least one ultrasonic device with an operating frequency and an intensity, disposed in the metallization apparatus; at least one ultrasonic power generator connecting to the ultrasonic device; at least one inlet for metal slat electrolyte feeding; and at least one outlet for metal salt electrolyte draining.
摘要翻译：提供了一种用于从电解质进行衬底金属化的设备。该装置包括：含有金属盐电解质的浸液池; 连接至少一个电源的至少一个电极; 保持至少一个基板的导电基板保持器，以暴露所述基板的导电侧面对所述至少一个电极; 用于以幅度和频率振荡衬底保持器的振荡致动器; 设置在所述金属化装置中的具有工作频率和强度的至少一个超声装置; 连接到所述超声波装置的至少一个超声波发生发电机; 用于金属板条电解质进料的至少一个入口; 和用于金属盐电解液排出的至少一个出口。

54. 发明申请

WO2010031215A1 METHOD FOR SUBSTANTIALLY UNIFORM COPPER DEPOSITION ONTO SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于将半导体沉积物沉积到半导体晶体上的方法
公开(公告)号：WO2010031215A1
公开(公告)日：2010-03-25
申请号：PCT/CN2008/072373
申请日：2008-09-16
申请人： ACM RESEARCH (SHANGHAI) INC. , MA, Yue , WANG, Xi , HE, Chuan , WANG, Hui
发明人： MA, Yue , WANG, Xi , HE, Chuan , WANG, Hui
IPC分类号： C25D5/02 , C25D5/18 , C25D21/12 , C25D17/00 , H01L21/288
CPC分类号： C25D5/08 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/12 , C25D21/12 , H01L21/2885
摘要： The methods practiced in an electrochemical deposition apparatus with two or more electrodes, described in earlier inventions, are disclosed. The methods produce uniform copper films with WFNU less than 2.5% on semiconductor wafers bearing a resistive copper seed layer with a thickness ranging from 50 to 9O0A in a copper sulfate based electrolyte whose conductivity is between 0.02 to 0.8S/cm.
摘要翻译：公开了在具有两个或多个电极的电化学沉积设备中实施的方法，其在先前的发明中描述。该方法在导电率为0.02至0.8S / cm的硫酸铜基电解质中，在半导体晶片上产生厚度范围为50至90OA的电阻铜籽晶层的WFNU小于2.5％的均匀铜膜。

55. 发明申请

WO2010020092A1 BARRIER LAYER REMOVAL METHOD AND APPARATUS 审中-公开
标题翻译： BARRIER层去除方法和装置
公开(公告)号：WO2010020092A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/072059
申请日：2008-08-20
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , JIA, Zhaowei , WU, Junping , XIE, Liangzhi , WANG, Hui
发明人： WANG, Jian , JIA, Zhaowei , WU, Junping , XIE, Liangzhi , WANG, Hui
IPC分类号： H01L21/302 , H01L21/306 , B44C1/22
CPC分类号： H01L21/67069 , H01L21/02074 , H01L21/32115 , H01L21/32135 , H01L21/67075
摘要： A method and an apparatus by integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the tantalum oxide or titanium oxide formed during SFP process and XeF2 gas phase etching barrier layer Ta/TaN or Ti/TiN process are provided. Firstly, at least portion of plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ti/TiN is removed with XeF2 gas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.
摘要翻译：提供了一种通过集成无应力电化学铜抛光（SFP）的半导体制造工艺，去除在SFP工艺和XeF 2气相蚀刻阻挡层Ta / TaN或Ti / TiN工艺期间形成的氧化钽或氧化钛的方法和装置。首先，通过SFP抛光电镀铜膜的至少一部分。其次，在SFP工艺期间形成的阻挡金属氧化物膜被蚀刻剂蚀刻掉。最后，用XeF2气相蚀刻除去阻挡层Ta / TaN或Ti / TiN。因此该装置由三个子系统组成：无应力铜电解抛光系统，阻挡层氧化膜去除系统和阻挡层Ta / TaN或Ti / TiN气相蚀刻系统。

56. 发明申请

WO2022226684A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：WO2022226684A1
公开(公告)日：2022-11-03
申请号：PCT/CN2021/089596
申请日：2021-04-25
申请人： ACM RESEARCH (SHANGHAI) , INC. , ACM RESEARCH KOREA CO., LTD. , CLEANCHIP TECHNOLOGIES LIMITED
发明人： WANG, Hui , LEE, Mark , WU, Jun , CHENG, Cheng , JUNG, Andrew , SOHN, Bruce , WANG, Jun , KIM, Yy
IPC分类号： H01L21/677
摘要： Embodiments of the present invention provide a substrate processing apparatus comprising a chemical liquid processing apparatus. The chemical liquid processing apparatus includes a first chemical liquid processing part, a second chemical liquid processing part configured to be stacked with the first chemical liquid processing part, a heating processing part located opposite the first chemical liquid processing part and the second chemical liquid processing part and a substrate transferring part located between the first and second chemical liquid processing parts and the heating processing part. The substrate transferring part is configured to have at least two first robots, at least one second robot and at least one third robot, all of which are arranged in parallel layers, and at least one pair of first buffer units located between two adjacent first robots and configured for loading and unloading the substrates therein and therefrom via the at least one second robot. The at least two first robots are configured to transfer the substrates between the first chemical liquid processing part and the heating processing part and the at least one third robot is configured to transfer the substrates between the second chemical liquid processing part and the heating processing part.

57. 发明申请

WO2022126403A1 SUBSTRATE SUPPORTING APPARATUS 审中-公开
公开(公告)号：WO2022126403A1
公开(公告)日：2022-06-23
申请号：PCT/CN2020/136658
申请日：2020-12-16
申请人： ACM RESEARCH (SHANGHAI) , INC.
发明人： WANG, Hui , LIU, Feng , TAO, Xiaofeng , JIA, Shena , CHEN, Fuping , HU, Haibo , LIU, Yang
IPC分类号： H01L21/687 , H01L21/67
摘要： A substrate supporting apparatus having a spin chuck (100) and a plurality of locating pins (130) is provided. The spin chuck (100) configured to support and rotate a substrate (001) has a supporting surface (110). The locating pins (130) are disposed at the periphery of the supporting surface (110) for limiting the substrate (001) horizontal displacement. The supporting surface (110) defines a first annular region (150). The first annular region (150) is divided into a plurality of pin regions (151) and a plurality of non-pin regions (152). The pin regions (151) and the non-pin regions (152) are arranged alternatively in a circumferential direction of the first annular region (150). Each of the pin regions (151) is corresponding to one locating pin (130). A plurality of Bernoulli holes (160) are set in the first annular region (150) and is configured as an uneven structure in the first annular region (150) so as to supply stronger gas flow in the pin regions (151) than in the non-pin regions (152).

58. 发明申请

WO2021189181A1 PLATING APPARATUS AND PLATING METHOD 审中-公开
公开(公告)号：WO2021189181A1
公开(公告)日：2021-09-30
申请号：PCT/CN2020/080622
申请日：2020-03-23
申请人： ACM RESEARCH (SHANGHAI) , INC.
发明人： WANG, Hui , WANG, Jian , YANG, Hongchao , JIA, Zhaowei
IPC分类号： C25D17/00 , C25D17/06 , C25D7/12
摘要： The present invention discloses plating apparatuses and plating methods for metal deposition on a substrate with pattern structures. In an embodiment, a plating apparatus comprises a plating bath configured to accommodate electrolyte, a substrate holding module configured to hold a substrate, and at least one driving device configured to drive the substrate holding module together with the substrate to horizontally vibrate and/or vertically vibrate during the substrate being immersed into the electrolyte to be plated. The present invention can enhance mass transfer during the substrate being plated by vibrating the substrate holding module so as to raise plating rate and uniformly plating on the pattern structures.

59. 发明申请

WO2019232741A1 APPARATUS AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
公开(公告)号：WO2019232741A1
公开(公告)日：2019-12-12
申请号：PCT/CN2018/090227
申请日：2018-06-07
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： WANG, Hui , FANG, Zhiyou , WU, Jun , LU, Guanzhong , CHEN, Fuping , WANG, Jian , WANG, Jun , WANG, Deyun
IPC分类号： H01L21/00
摘要： Methods and apparatuses for cleaning semiconductor wafers(202). Thereinto, a method comprises transferring one or more wafers(202) to at least one first tank(201) containing cleaning chemical, one or more second tanks(207) containing cleaning liquid successively for implementing batch cleaning process; taking the one or more wafers(202) out of the cleaning liquid in the one or more second tanks(207) and transferring the one or more wafers(202) to one or more single wafer cleaning modules(510) for implementing single wafer cleaning and drying processes; wherein control and keep a certain thickness of liquid film(204,504) on the one or more wafers(202) from the moment of the one or more wafers out of the cleaning chemical in the at least one first tank(201) till the one or more wafers(202) are immersed in the cleaning liquid of the one or more second tanks(207), and/or from the moment of the one or more wafers(202) out of the cleaning liquid in the one or more second tanks(207) till the one or more wafers(202) are transferred to the one or more single wafer cleaning modules(510).

60. 发明申请

WO2019205074A1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
公开(公告)号：WO2019205074A1
公开(公告)日：2019-10-31
申请号：PCT/CN2018/084752
申请日：2018-04-27
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： CHEN, Fuping , ZHANG, Xiaoyan , WANG, Hui
IPC分类号： B01D19/00 , F04B23/00
摘要： Embodiments of the present disclosure relate to a method for cleaning an in-process wafer. The method comprises causing the in-process wafer to be rotated, causing function water to be applied to a surface of the rotated in-process wafer to generate a flowing function water film on the rotated in-process wafer, causing the surface of the in-process wafer to be cleaned by a sonic device for a first period, causing the sonic device to be lifted and/or rotation speed of the rotated in-process wafer to be accelerated to separate the sonic device from the flowing function water film, causing the function water to be applied to the surface of the rotated in-process wafer for a second period after separating the sonic device from the function water film, and causing the surface of the in-process wafer to be dried.

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