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    • 45. 发明申请
    • CONTROLLER FOR TUNABLE MEMS CAPACITOR
    • 微控制器电容器控制器
    • WO2008152559A3
    • 2009-02-05
    • PCT/IB2008052253
    • 2008-06-09
    • NXP BVSTEENEKEN PETER GREIMANN KLAUS
    • STEENEKEN PETER GREIMANN KLAUS
    • H03J5/24H01G5/16
    • H01G5/16H01G5/013H01G5/0136H01G7/06H01G2005/02H03J5/248
    • A MEMS tunable capacitor comprises first and second opposing capacitor electrodes (10,12), wherein the second capacitor electrode (12) is movable by a MEMS switch to vary the capacitor dielectric spacing, and thereby tune the capacitance. A tunable dielectric material (14) and a non- tunable dielectric material are in series between the first and second electrodes. The tunable dielectric material occupies a dimension gd of the electrode spacing, and the non-tunable dielectric material occupies a dimension g of the electrode spacing. A third electrode (20) faces the movable second electrode (12) for electrically controlling tunable dielectric material. A controller is adapted to vary the capacitor dielectric spacing for a first continuous range of adjustment of the capacitance of the MEMS capacitor, and to tune the dielectric material (14) for a second continuous range of adjustment of the capacitance of the MEMS capacitor, thereby to provide a continuous analogue range of adjustment including the first and second ranges. This arrangement provides independent control of the MEMS function and the dielectric tuning function, and enables a continuous adjustability.
    • MEMS可调谐电容器包括第一和第二相对电容器电极(10,12),其中第二电容器电极(12)可通过MEMS开关移动以改变电容器介电间距,从而调谐电容。 可调电介质材料(14)和非可调电介质材料串联在第一和第二电极之间。 可调电介质材料占电极间距的尺寸gd,不可调电介质材料占电极间距的尺寸g。 第三电极(20)面向可动第二电极(12),用于电控制可调电介质材料。 控制器适于改变用于MEMS电容器的电容的第一连续调节范围的电容器电介质间隔,并且调谐电介质材料(14)用于MEMS电容器的电容的第二连续调节范围,从而 以提供包括第一和第二范围的连续模拟调节范围。 这种布置提供了对MEMS功能和介质调谐功能的独立控制,并且实现了连续可调性。
    • 47. 发明申请
    • RECEIVER COMPRISING A VARIABLE CAPACITANCE DIODE
    • 包含可变电容二极管的接收器
    • WO0207222A3
    • 2002-04-11
    • PCT/EP0107686
    • 2001-07-04
    • KONINKL PHILIPS ELECTRONICS NVPHILIPS CORP INTELLECTUAL PTYBOLLIG BERNHARDRITTER HANS M
    • BOLLIG BERNHARDRITTER HANS M
    • H01L27/04H01L21/822H01L27/06H01L27/08H01L29/93H03J5/24H04B1/18
    • H01L27/0808H01L27/0682H01L27/0802
    • A receiver for radio or television signals provided with a high-frequency circuit comprising a discrete semiconductor component which includes a planar variable capacitance diode formed on a semiconductor substrate of a first doping type with a first doping density n1, on which semiconductor substrate an epitaxial layer of the same doping type with a second doping density n2 > n1 is provided, on which epitaxial layer an insulation layer having a first window is provided by means of a first laterally bounded semiconductor region of a second doping type with a doping density n3 > n2 in the epitaxial layer below the first window, and a first contact pad which contacts the first laterally bounded semiconductor region via the first window, which semiconductor component further includes an integrated series resistor composed of a resistor path comprising two path ends on the insulation layer, the first path end being in contact, through a second window in the insulation layer, with a third laterally bounded semiconductor region of the first doping type with a doping density n5 > n2, which extends, in the vertical direction, at least through the epitaxial layer, which resistor path further comprises a second contact pad, which is arranged on the insulation layer and contacts the second path end of the resistor path, and a second laterally bounded semiconductor region in the epitaxial layer, below the second contact pad and the resistor path, said semiconductor region having a doping of the second doping type with a doping density n4, which substantially compensates for the doping of the first doping type with a doping density n2 of the epitaxial layer.
    • 一种用于无线电或电视信号的接收机,其具有包括分立半导体部件的高频电路,该分立半导体部件包括形成在具有第一掺杂密度n1的第一掺杂类型的半导体衬底上的平面可变电容二极管,半导体衬底上具有外延层 提供具有第二掺杂密度n2> n1的相同掺杂类型,其上具有第一窗口的绝缘层的外延层借助于具有掺杂密度n3> n2的第二掺杂类型的第一横向界限半导体区域提供 在第一窗口下方的外延层中,以及经由第一窗口接触第一横向界限半导体区域的第一接触焊盘,该半导体部件还包括由在绝缘层上包括两个路径端的电阻器路径组成的集成串联电阻器, 第一路径端部通过绝缘层中的第二窗口与第三通道接触 具有掺杂密度n5> n2的第一掺杂型的有界半导体区域,其在垂直方向上至少穿过外延层延伸,该电阻器路径还包括布置在绝缘层上的第二接触焊盘, 接触电阻器路径的第二路径端,以及外延层中的第二横向限制的半导体区域,在第二接触焊盘和电阻器路径下方,所述半导体区域具有掺杂浓度为n4的第二掺杂类型的掺杂, 基本上补偿了具有外延层的掺杂密度n 2的第一掺杂类型的掺杂。
    • 48. 发明申请
    • HIGH FREQUENCY INPUT STAGE
    • 高频输入STAGE
    • WO02013383A1
    • 2002-02-14
    • PCT/DE2001/003012
    • 2001-08-07
    • H03J5/24H04B1/18H04B1/403
    • H04B1/406H03J5/244H04B1/18
    • The invention relates to a high frequency input stage comprising a high frequency coupling element (KE), which couples an air interface (ANT) to the inputs of high frequency resonant circuits (HR1, HR2) that are connected in parallel. In order to realize a switchless circuit with a simple design, only one capacitor (C3) that forms a low pass filter is provided in the coupling element (KE), which divides an antenna signal up on the different bands thereby suppressing influences of a band that is other than the selected band. The high frequency input stage can be used, for example, in three-band TV tuners.
    • 提供了一种具有射频耦合元件(KE),高频输入级,其耦合并联连接到高频谐振电路(HR1,HR2)的输入端的空中接口(ANT)。 为了允许自由切换,结构简单的电路布置中,只有一个低通形成在所述耦合元件(KE)容量(C3)设置其将在不同频带从而抑制除了所选择的频带以外的影响的天线信号。 RF输入电平是适用的,例如在三频段电视调谐器。
    • 49. 发明申请
    • RECEIVER COMPRISING A DIGITALLY CONTROLLED CAPACITOR BANK
    • 收件人包含数字控制电容器银行
    • WO02009280A1
    • 2002-01-31
    • PCT/EP2001/008398
    • 2001-07-19
    • H04B1/26H03J3/20H03J5/24H04B1/18
    • H03J5/246H03J2200/10H03J2200/36
    • Receiver comprising an RF input filter including a digitally controlled capacitor bank with n capacitors being controlled by a tuning control signal for varying the tuning frequency of the RF input filter within a tuning range. For an improvement of the receiver in price/performance ratio the n capacitors of the digitally controlled capacitor bank are monolythically integrated, whereas the bandwidth of the tunable RF input filter is being adjusted to the maximum relative spread of said capacitors. A continuous tuning control signal is being supplied through an analogue to digital (AD) converter to said capacitor bank and to a first input of a differential stage, an output of the AD converter being coupled through a digital to analogue (DA) converter to a second input of a differential stage, an output of the differential stage being coupled to a control terminal of a variable capacitance diode being arranged in parallel to the digitally controlled capacitor bank.
    • 接收机包括具有数字控制的电容器组的RF输入滤波器,其中n个电容器由调谐控制信号控制,用于在调谐范围内改变RF输入滤波器的调谐频率。 为了改善接收机的性价比,数字控制电容器组的n个电容器是单分频集成的,而可调RF输入滤波器的带宽正在调整到所述电容器的最大相对扩展。 通过模拟数字(AD)转换器向所述电容器组和差分级的第一输入端提供连续调谐控制信号,AD转换器的输出通过数模转换器(DA)转换器耦合到 差分级的第二输入端,差分级的输出端耦合到与数字控制的电容器组并联布置的可变电容二极管的控制端。
    • 50. 发明申请
    • HIGH Q STRUCTURE
    • 高Q结构
    • WO01076066A1
    • 2001-10-11
    • PCT/US2001/011107
    • 2001-04-04
    • H03B1/00H03B5/08H03F3/191H03J1/00H03J5/24H03M1/80H03J3/20
    • H03F1/56H03B5/08H03B2201/0208H03B2201/025H03B2201/0266H03F3/191H03J1/0008H03J5/246H03J2200/10H03M1/804
    • A structure (110, 150) for enhancing the quality factor (Q) of a capacitive circuit (112, 152). The capacitive circuit (112, 152) includes a first resistance (122, 164), a capacitance (124, 166), and a second resistance (126, 168). The capacitance (124, 166) represents the net capacitance of the capacitive circuit (112, 152), and the first resistance (122, 164) and second resistance (126, 168) represent elements of the intrinsic resistance of the capacitive circuit (112, 152). In one embodiment the structure (110) includes a first capacitor (128) which is connected in parallel with the capacitive circuit (112), and second capacitor (130) which is connected in series with the capacitive circuit (112). In a second embodiment the structure (150) includes a first inductor (164), connected in series between the capacitive circuit (152) and a node (162) where the first capacitor (174) and one end of the second capacitor (176) connect, and a second inductor (172) connected in series between the capacitive circuit (152) and the other end of the second capacitor (130).
    • 一种用于增强电容电路(112,152)的品质因数(Q)的结构(110,150)。 电容电路(112,152)包括第一电阻(122,164),电容(124,166)和第二电阻(126,168)。 电容(124,166)表示电容电路(112,152)的净电容,第一电阻(122,164)和第二电阻(126,168)表示电容电路(112)的固有电阻的元件 ,152)。 在一个实施例中,结构(110)包括与电容电路(112)并联连接的第一电容器(128)和与电容电路(112)串联连接的第二电容器(130)。 在第二实施例中,结构(150)包括串联连接在电容电路(152)和节点(162)之间的第一电感器(164),其中第一电容器(174)和第二电容器(176)的一端 连接,并且串联连接在电容电路(152)和第二电容器(130)的另一端之间的第二电感器(172)。