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41. 发明申请

WO2011056426A1 SEMIPOLAR {20-21} III-NITRIDE LASER DIODES WITH ETCHED MIRRORS 审中-公开
标题翻译： SEMIPOLAR {20-21} III-NITRIDE激光二极管与蚀刻镜
公开(公告)号：WO2011056426A1
公开(公告)日：2011-05-12
申请号：PCT/US2010/053353
申请日：2010-10-20
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , TYAGI, Anurag , FARRELL, Robert, M. , HUANG, Chia-Yen , HSU, Po Shan , HAEGER, Daniel, A. , KELCHNER, Kathryn, M. , OHTA, Hiroaki , NAKAMURA, Shuji , DENBAARS, Steven, P. , SPECK, James, S.
发明人： TYAGI, Anurag , FARRELL, Robert, M. , HUANG, Chia-Yen , HSU, Po Shan , HAEGER, Daniel, A. , KELCHNER, Kathryn, M. , OHTA, Hiroaki , NAKAMURA, Shuji , DENBAARS, Steven, P. , SPECK, James, S.
IPC分类号： H01S5/0683 , H01L21/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01S5/0014 , H01S5/06216 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.
摘要翻译：采用具有一个或多个蚀刻刻面镜的空腔的半极性{20-21} III族氮化物基激光二极管。蚀刻刻面镜提供了任意控制激光二极管的空腔或条纹的取向和尺寸的能力，从而能够控制激光二极管的电和光学性质。

42. 发明申请

WO2011034194A1 SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS, AND IMAGE FORMING APPARATUS 审中-公开
标题翻译：表面发射激光，表面发射激光阵列，光学扫描装置和图像形成装置
公开(公告)号：WO2011034194A1
公开(公告)日：2011-03-24
申请号：PCT/JP2010/066270
申请日：2010-09-14
申请人： RICOH COMPANY, LTD. , JIKUTANI, Naoto , HARASAKA, Kazuhiro , SUGAWARA, Satoru , SATO, Shunichi
发明人： JIKUTANI, Naoto , HARASAKA, Kazuhiro , SUGAWARA, Satoru , SATO, Shunichi
IPC分类号： H01S5/183
CPC分类号： H01S5/18313 , B82Y20/00 , H01S5/0014 , H01S5/18327 , H01S5/1835 , H01S5/18355 , H01S5/18369 , H01S5/18394 , H01S5/2009 , H01S5/3054 , H01S5/3202 , H01S5/3406 , H01S5/423 , H01S2301/166
摘要： A surface-emitting laser includes a substrate; a lower semiconductor multilayer film reflector disposed on the substrate; a resonator structure including an active layer and disposed on the lower semiconductor multilayer film reflector; and an upper semiconductor multilayer film reflector disposed on the resonator structure. The second semiconductor multilayer film reflector includes a confinement structure in which a current passage region is surrounded by an oxidized portion of a selectively oxidized layer containing aluminum. An emission region includes a central portion and a peripheral portion, the peripheral portion being covered with a transparent dielectric film whose reflectivity is lower than a reflectivity of the central portion. The selectively oxidized layer has a thickness in a range from 30 nm to 40 nm. The temperature at which an oscillation threshold current is minimized is 60°C or lower.
摘要翻译：表面发射激光器包括基板; 设置在所述基板上的下半导体多层膜反射器; 包括有源层并设置在下半导体多层膜反射器上的谐振器结构; 以及设置在谐振器结构上的上半导体多层膜反射器。第二半导体多层膜反射器包括限制结构，其中电流通道区域被包含铝的选择性氧化层的氧化部分包围。发射区域包括中心部分和周边部分，周边部分被反射率低于中心部分的反射率的透明电介质膜覆盖。选择性氧化层的厚度为30nm〜40nm。振荡阈值电流最小化的温度为60℃以下。

43. 发明申请

WO2010029775A1 窒化物系半導体光素子、窒化物系半導体光素子のためのエピタキシャルウエハ、及び半導体発光素子を製造する方法审中-公开
标题翻译：氮化物半导体光学器件，氮化物半导体光学器件的外延晶片及制造半导体发光器件的方法
公开(公告)号：WO2010029775A1
公开(公告)日：2010-03-18
申请号：PCT/JP2009/050992
申请日：2009-01-22
申请人：住友電気工業株式会社 , 上野昌紀 , 塩谷陽平 , 京野孝史 , 秋田勝史 , 善積祐介 , 住友隆道 , 中村孝夫
发明人：上野昌紀 , 塩谷陽平 , 京野孝史 , 秋田勝史 , 善積祐介 , 住友隆道 , 中村孝夫
IPC分类号： H01L33/00 , H01L21/205 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要：窒化物系半導体光素子ＬＥ１では、歪みを内包した井戸層２１は、ｃ軸方向に延びる基準軸に直交する面に対して傾斜角αで傾斜した基準平面ＳＲ１に沿って延びる。傾斜角αは５９度より大きく８０度未満の範囲及び１５０度より大きく１８０度未満の範囲である。負のピエゾ電界を有する発光層ＳＰ－に隣接して、障壁層のバンドギャップより大きなバンドギャップを有する窒化ガリウム系半導体層Ｐが示されている。井戸層Ｗ３におけるピエゾ電界の向きはｎ層からｐ層への方向であり、窒化ガリウム系半導体層Ｐにおけるピエゾ電界の向きはｐ層からｎ層への方向である。このため、発光層ＳＰ－と窒化ガリウム系半導体層Ｐとの界面には、伝導帯ではなく価電子帯にディップが形成される。
摘要翻译：氮化物半导体光学器件（LE1）的阱层（21）涉及应变并且沿着相对于垂直于沿着c轴延伸的参考轴的平面以倾斜角α倾斜的参考平面（SR1）延伸。倾斜角度α在59°至80°的范围内，在150°至180°的范围内。与具有负压电场的发光层（SP-）相邻地设置具有比阻挡层的带隙大的带隙的氮化镓半导体层（P）。阱层（W3）中的压电场的方向是从n层到p层，并且氮化镓半导体层（P）中的压电场的方向是从p层到n层。因此，在发光层（SP-）和氮化镓半导体层（P）的界面处形成不在导带上而是价带的倾斜。

44. 发明申请

WO2010021529A2 외부 공진기를 이용한 반도체 레이저 审中-公开
标题翻译：使用外部谐振器的半导体激光器
公开(公告)号：WO2010021529A2
公开(公告)日：2010-02-25
申请号：PCT/KR2009/004719
申请日：2009-08-24
申请人： 김정수
发明人： 김정수
IPC分类号： H01S5/00 , H01S5/10
CPC分类号： H01S5/141 , H01S5/0014 , H01S5/02288 , H01S5/02292 , H01S5/0687
摘要： 본 발명은 외부 공진기형의 반도체 레이저에 관한 것으로, 레이저 다이오드 칩에서 패키지 바닥면에 대해 수평으로 발산되는 레이저 빛을 레이저 다이오드 칩의 레이저 빛 방출면 측면에 배치된 반사 거울을 이용하여 패키지 상부 방향으로 레이저 빛의 진행 경로를 절환 한 후, 상향 방향으로 진행하는 레이저 빛 광 경로상에 렌즈를 부착함으로써, 렌즈에 의한 외부 공진기 광 정렬를 패키지 바닥면과 수평한 평면에서 이루어지도록 함으로써 광정렬을 쉽게 할 수 있다. 또한 렌즈의 상부에 패키지 바닥에 대해 상향 방향으로 진행하는 레이저 빛을 수평으로 절환하는 추가의 반사 거울을 장착함으로써, 패키지 바닥면에 대해 수평면으로 이동하는 렌즈에 의한 광정렬를 손쉽게 함과 동시에 여러 광학적 기구물들을 패키지 바닥면에 늘어 놓는 형태로 패키지의 제작이 가능해, 손쉽게 다양한 특징을 가지는 외부 공진기형 반도체 레이저를 제작 할 수 있다.
摘要翻译：本发明涉及使用外部谐振器的半导体激光器。激光二极管芯片在平行于封装的底面的水平方向上发射激光束，并且激光束的行进路径通过反射镜改变为垂直方向，该反射镜紧邻激光束的激光束发射表面二极管芯片结果，通过安装在激光束的垂直行进路径上的透镜，外部空腔的光束布置可以在与封装的底部平面平行的平面上使用。因此，梁容易布置。此外，在透镜上方安装附加的反射镜，其将垂直行进路径改变为水平行进路径，这允许平行于底平面的光束容易地通过透镜布置。包装的生产也可以在各种光学工具布置在包装的底部上的配置中实现。因此，可以容易地制造使用外部空腔并具有各种特性的半导体激光器。

45. 发明申请

WO2008011043A2 ALGAINN-BASED LASERS WITH DOVETAILED RIDGE 审中-公开
标题翻译：基于ALGAINN的激光与DOVETAILID RIDGE
公开(公告)号：WO2008011043A2
公开(公告)日：2008-01-24
申请号：PCT/US2007/016235
申请日：2007-07-18
申请人： BINOPTICS CORPORATION
发明人： BEHFAR, Alex, A.
IPC分类号： H01L21/311 , H01S5/02
CPC分类号： H01S5/0201 , B82Y20/00 , H01S5/0014 , H01S5/0203 , H01S5/1085 , H01S5/18 , H01S5/22 , H01S5/34333
摘要： A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500 °C and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.
摘要翻译：一种用于制造能够发射蓝光的激光的工艺，其中在CAIBE中使用超过500℃的温度和超过500V的离子束蚀刻GaN晶片以形成激光波导和反射镜，并且其中所述激光波导具有向内的成角度侧壁。

46. 发明申请

WO2005079248A3 METHODS AND SYSTEMS FOR HIGH CURRENT SEMICONDUCTOR DIODE JUNCTION PROTECTION 审中-公开
标题翻译：用于高电流半导体二极管接点保护的方法和系统
公开(公告)号：WO2005079248A3
公开(公告)日：2007-02-15
申请号：PCT/US2005004013
申请日：2005-02-10
申请人： SCIENCE RES LAB INC , MANGANO JOSEPH
发明人： MANGANO JOSEPH
IPC分类号： H02H5/00 , H01S5/00 , H01S5/068 , H03K17/082
CPC分类号： H03K17/082 , H01S5/0014 , H01S5/06825 , H01S5/06835
摘要： Protection methodes and protection systems, for high current semiconductor devices with diode junctions, that detect the anomalie in the local temperature at small areas of the junction and protect the device from accelerated aging and premature catastrophic damage In an embodiment of the method of this invention for protecting high current semiconductor devices with diode junctions, anomalies in the electrical or optical behavior of the junction are detected (20) and, upon detection of the anomalies, power is diverted away from or around the device (30).
摘要翻译：用于具有二极管接头的大电流半导体器件的保护方法和保护系统，其检测接合部分的小区域处的局部温度的异常并保护器件免于加速老化和过早的灾难性损坏。在本发明的方法的实施例中，保护具有二极管结的大电流半导体器件，检测到结的电或光学行为的异常（20），并且在检测到异常时，电力被转移离开设备（30）或其周围。

47. 发明申请

WO2006138492A2 POST & PENETRATION INTERCONNECTION 审中-公开
标题翻译： POST＆PENETRATION INTERCONNECTION
公开(公告)号：WO2006138492A2
公开(公告)日：2006-12-28
申请号：PCT/US2006/023364
申请日：2006-06-14
申请人： CUBIC WAFER, INC. , TREZZA, John , CALLAHAN, John , DUDOFF, Gregory
发明人： TREZZA, John , CALLAHAN, John , DUDOFF, Gregory
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L21/6835 , H01L21/76898 , H01L23/5389 , H01L23/552 , H01L24/11 , H01L24/13 , H01L24/24 , H01L24/27 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2221/68359 , H01L2221/68368 , H01L2223/6622 , H01L2224/05001 , H01L2224/05022 , H01L2224/05023 , H01L2224/05026 , H01L2224/05027 , H01L2224/0508 , H01L2224/05147 , H01L2224/05568 , H01L2224/05572 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/114 , H01L2224/1147 , H01L2224/116 , H01L2224/13012 , H01L2224/13099 , H01L2224/13609 , H01L2224/16 , H01L2224/24226 , H01L2224/274 , H01L2224/75305 , H01L2224/81136 , H01L2224/81193 , H01L2224/81801 , H01L2225/06513 , H01L2225/06541 , H01L2225/06555 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01S5/0014 , H01S5/0201 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： A method of physically and electrically joining two chips to each other involves aligning an electrically conductive contact of a first chip with a corresponding electrically conductive contact on a second chip, the electrically conductive contact of the first chip being a rigid material and the electrically conductive contact of the second chip being a material that is malleable, bringing the aligned electrically conductive contact of the first chip into contact with the corresponding electrically conductive contact on the second chip, elevating the contact of the chips to a temperature that is below a liquidus temperature for both the rigid material and the material that is malleable while applying pressure to the chips so as to cause the rigid material to penetrate the malleable material and form an electrically conductive connection, and, following the forming of the electrically conductive connection, cooling the contacts to an ambient temperature.
摘要翻译：将两个芯片彼此物理和电连接的方法包括将第一芯片的导电触点与第二芯片上的对应导电触点对准，第一芯片的导电触点是刚性材料，并且导电触点第二芯片是具有延展性的材料，使得第一芯片的对齐的导电触点与第二芯片上的对应的导电触点接触，将芯片的接触升高到低于液相线温度的温度刚性材料和材料都是可塑的，同时向芯片施加压力，以使刚性材料穿透可延展材料并形成导电连接，并且在形成导电连接之后，将触点冷却环境温度。

48. 发明申请

WO2006102686A2 HIGH POWER DIODE LASERS 审中-公开
标题翻译：高功率二极管激光器
公开(公告)号：WO2006102686A2
公开(公告)日：2006-09-28
申请号：PCT/US2006/011476
申请日：2006-03-27
申请人： TRUMPF PHOTONICS INC. , CHARACHE, Greg , JIANG, Ching-Long , MENNA, Raymond J.
发明人： CHARACHE, Greg , JIANG, Ching-Long , MENNA, Raymond J.
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/1014 , H01S5/16 , H01S5/22 , H01S5/2214 , H01S5/2231 , H01S2301/18
摘要： The invention relates to ridge waveguide semiconductor diode lasers that include a substrate, a first cladding layer near the substrate, a second cladding layer near the first cladding layer, and an active layer between the first cladding layer and the second cladding layer and extending the distance between a first facet and a second facet of the diode laser. The diode laser includes a cap layer located near the second cladding layer, a ridge formed in the cap layer and the second cladding layer, and a contact layer applied at least at the ridge for injecting current into the active layer. The contact layer contacts the cap layer in a contact region having a length that is less than the distance between the first facet and the second facet such that the cap layer includes an unpumped facet region. Methods to make the new lasers are also described.
摘要翻译：本发明涉及脊形波导半导体二极管激光器，其包括衬底，靠近衬底的第一包层，靠近第一包层的第二包层以及在第一包层和第二包层之间的有源层，第二包层并延伸二极管激光器的第一小面和第二小面之间的距离。该二极管激光器包括位于第二覆盖层附近的覆盖层，形成在覆盖层和第二覆盖层中的脊，以及至少施加在脊处用于将电流注入有源层的接触层。接触层在长度小于第一小面与第二小面之间的距离的接触区域中接触盖层，使得盖层包括未抛出的小面积区域。还介绍了制作新激光器的方法。

49. 发明申请

WO2006036717A2 OPTICAL FEEDBACK FROM MODE-SELECTIVE TUNER 审中-公开
标题翻译：模式选择性调谐器的光学反馈
公开(公告)号：WO2006036717A2
公开(公告)日：2006-04-06
申请号：PCT/US2005/033909
申请日：2005-09-20
申请人： CORNING INCORPORATED , DUNN, Thomas J , FARMIGA, Nestor O , KULAWIEC, Andrew W , MARRON, Joseph C
发明人： DUNN, Thomas J , FARMIGA, Nestor O , KULAWIEC, Andrew W , MARRON, Joseph C
IPC分类号： H01S3/10
CPC分类号： H01S5/0687 , G01B9/02004 , G01B9/02057 , G01B9/02083 , G01B2290/60 , G01J9/02 , G01J2009/0292 , H01S5/0014 , H01S5/141 , H01S5/142
摘要： A mode-monitoring system used in connection with discrete beam frequency tunable laser provides optical feedback that can be used for adjusting the laser or for other processing associated with the use of the laser. For example, the output of a frequency tunable source for a frequency-shifting interferometer can be monitored to support the acquisition or processing of more accurate interference data. A first interferometer for taking desired measurements of optical path length differences traveled by different portions of a measuring beam can be linked to a second interferometer for taking measurements of the measuring beam itself. The additional interference data can be interpreted in accordance with the invention to provide measures of beam frequency and intensity.
摘要翻译：与分立光束可调谐激光器相结合使用的模式监测系统提供可用于调整激光器或与使用激光器相关的其他处理的光学反馈。例如，可以监视用于频移干涉仪的频率可调谐源的输出，以支持获取或处理更准确的干扰数据。用于取得测量光束的不同部分所行进的光程长差的期望测量的第一干涉仪可以连接到用于测量测量光束本身的第二干涉仪。可以根据本发明解释附加的干扰数据，以提供射束频率和强度的测量。

50. 发明申请

WO2005079248A2 METHODS AND SYSTEMS FOR HIGH CURRENT SEMICONDUCTOR DIODE JUNCTION PROTECTION 审中-公开
标题翻译：用于高电流半导体二极管接点保护的方法和系统
公开(公告)号：WO2005079248A2
公开(公告)日：2005-09-01
申请号：PCT/US2005/004013
申请日：2005-02-10
申请人： SCIENCE RESEARCH LABORATORY, INC. , MANGANO, Joseph
发明人： MANGANO, Joseph
IPC分类号： H01S5/00 , H01S5/068 , H03K17/082
CPC分类号： H03K17/082 , H01S5/0014 , H01S5/06825 , H01S5/06835
摘要： Protection methods and protection systems, for high current semiconductor devices with diode junctions, that detect the anomalies in the local temperature at small areas of the junction and protect the device from accelerated aging and premature catastrophic damage. In an embodiment of the method of this invention for protecting a high current semiconductor devices with diode junctions, anomalies in the electrical or optical behavior of the junction are detected and, upon detection of the anomalies, power is diverted away from or around the device.
摘要翻译：用于具有二极管接头的大电流半导体器件的保护方法和保护系统，用于检测接合部分小区域局部温度的异常，并保护器件免受加速老化和过早的灾难性损坏。在用于保护具有二极管结的高电流半导体器件的本发明的方法的实施例中，检测到结的电或光学行为的异常，并且在检测到异常时，功率被转移离开器件或器件周围。

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