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    • 31. 发明申请
    • DIFFERENTIAL CRYSTAL OSCILLATOR CIRCUIT
    • 差分晶体振荡器电路
    • WO2016014176A1
    • 2016-01-28
    • PCT/US2015/036055
    • 2015-06-16
    • QUALCOMM INCORPORATED
    • RAJAVI, YasharKAVOUSIAN, AmirpouyaKHALILI, AlirezaVAHID FAR, Mohammad BagherKOMIJANI, Abbas
    • H03B5/36H03B5/06
    • H03B5/364H03B5/06H03B5/36H03B2200/004H03B2200/0094
    • A differential crystal oscillator circuit, including: first and second output terminals; a cross-coupled oscillation unit including first and second transistors cross-coupled to the first and second output terminals; first and second metal-oxide semiconductor field-effect transistor (MOSFET) diodes, each MOSFET diode including a resistor connected between gate and drain terminals, wherein the first MOSFET diode couples to the first transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the first transistor, wherein the second MOSFET diode couples to the second transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the second transistor; and a reference resonator coupled between the first and second output terminals to establish an oscillation frequency.
    • 一种差分晶体振荡器电路,包括:第一和第二输出端子; 交叉耦合振荡单元,包括交叉耦合到第一和第二输出端子的第一和第二晶体管; 第一和第二金属氧化物半导体场效应晶体管(MOSFET)二极管,每个MOSFET二极管包括连接在栅极和漏极端子之间的电阻器,其中第一MOSFET二极管耦合到第一晶体管以在低频和高电平下提供低阻抗负载 在第一晶体管的较高频率处的阻抗负载,其中所述第二MOSFET二极管耦合到所述第二晶体管,以在低频处提供低阻抗负载,并以较高频率向所述第二晶体管提供高阻抗负载; 以及耦合在第一和第二输出端子之间以建立振荡频率的参考谐振器。
    • 32. 发明申请
    • 高周波用電圧制御発振回路
    • 高频电压控制振荡电路
    • WO2008108201A1
    • 2008-09-12
    • PCT/JP2008/053173
    • 2008-02-25
    • 日本電波工業株式会社石井 武仁
    • 石井 武仁
    • H03B5/06
    • H03B5/1841H03B5/1203H03B5/1231H03B5/1243H03B5/1296H03B2200/007H03H7/20
    •  異常発振を抑制し、位相雑音を改善すると共に回路を小型化できる高周波用電圧制御発振回路を提供する。  発振用増幅回路のトランジスタQの帰還ループに移相回路として、3次以上の奇数のπ型ローパスフィルタと、その入出力に直列に接続された容量性可変リアクタンス素子D1 ,D2 とで構成し、ローパスフィルタは帰還ループに直列に接続する誘導性リアクタンス素子L3 と、その誘導性リアクタンス素子L3 の入出力に並列に接続された容量性可変リアクタンス素子D4 ,D5 とで構成し、誘導性リアクタンス素子L3 を馬蹄形、ドーナッツ形、コの字形のマイクロストリップラインとした高周波用電圧制御発振回路である。
    • 没有异常振荡的高频电压控制振荡电路的相位噪声提高,电路规模小。 分别连接到低通滤波器的输入和输出的三阶或更多阶奇数p低通滤波器和电容式可变电抗元件(D1,D2)组成的相移电路分别插入到 振荡放大器电路的晶体管(Q)。 低通滤波器由与反馈回路串联的感抗元件(L3)和并联连接到感抗元件(L3)的输入和输出的电容式可变电抗元件(D4,D5)组成。 感抗元件(L3)是C形,环形或U形微带线。 因此,实现了高频电压控制振荡电路。
    • 33. 发明申请
    • A METHOD AND APPARATUS FOR REDUCING THE START TIME OF A VCXO
    • 一种减少VCXO启动时间的方法和装置
    • WO2006022809A1
    • 2006-03-02
    • PCT/US2005/002493
    • 2005-01-25
    • SONY ERICSSON MOBILE COMMUNICATIONS ABWILCOX, Bruce
    • WILCOX, Bruce
    • H03B5/06
    • H03B5/368H03B5/06
    • A voltage controlled oscillator (100), such as a VCXO (Voltage Controlled Crystal Oscillator) (100), for generating a desired reference frequency in a wireless terminal (10) with a reduced start-up time is described herein. According to the present invention, the VCXO (100) comprises an oscillator (120) that generates the desired reference frequency based on a variable voltage applied to the oscillator (120) by a voltage controller (110). In addition, the VCXO (100) includes a start-up controller (130) that applies a bias voltage to an oscillator input node to reduce a capacitance associated with the oscillator (120), and therefore, to reduce the start-up time without negatively impacting the DC current consumption or the tuning range of the VCXO (100).
    • 这里描述了用于在具有减少的启动时间的无线终端(10)中产生期望的参考频率的压控振荡器(100),例如VCXO(压控晶体振荡器)(100)。 根据本发明,VCXO(100)包括基于通过电压控制器(110)施加到振荡器(120)的可变电压来产生期望参考频率的振荡器(120)。 此外,VCXO(100)包括启动控制器(130),其向振荡器输入节点施加偏置电压以减小与振荡器(120)相关联的电容,并且因此减少启动时间而没有 对VCXO(100)的直流电流消耗或调谐范围产生负面影响。
    • 35. 发明申请
    • METHOD AND SYSTEM FOR FAST WAKE-UP OF OSCILLATORS
    • 振荡器快速唤醒的方法和系统
    • WO2004036733A3
    • 2004-09-02
    • PCT/IL0300846
    • 2003-10-19
    • RFWAVES LTDGAZIT MEIR
    • GAZIT MEIR
    • H03B1/00H03B5/06H03B5/36H03B5/32
    • H03B5/06H03B5/36
    • A method and system for fast wakeup of a high-Q oscillator (300) that includes a resonating element (304), preferably a crystal resonator (304), and an amplifier (310). The method comprises connecting the resonating element (304) to a fast wakeup, low-Q oscillator (302), inputting a plurality of pulses generated by the low-Q oscillator(302) into the resonating element (304), and simultaneously disconnecting the resonating element (304) from the low-Q oscillator (302) while connecting the resonating element (304) to the amplifier (310), thereby obtaining substantially uniform steady state oscillations in the high-Q oscillator. The system (300) includes in addition to high-Q and low-Q oscillator elements a mechanism for counting the pulses (312) and for performing the simultaneous disconnection and connection mentioned above.
    • 一种用于快速唤醒高Q振荡器(300)的方法和系统,其包括谐振元件(304),优选晶体谐振器(304)和放大器(310)。 该方法包括将谐振元件(304)连接到快速唤醒低Q振荡器(302),将由低Q振荡器(302)产生的多个脉冲输入到谐振元件(304)中,同时断开 同时将谐振元件(304)连接到放大器(310),从而在低Q振荡器(302)中产生谐振元件(304),从而在高Q振荡器中获得基本上均匀的稳态振荡。 除了高Q和低Q振荡器元件之外,系统(300)还包括用于对脉冲(312)进行计数并执行上述同时断开和连接的机构。
    • 36. 发明申请
    • LOW-VOLTAGE OSCILLATION AMPLIFIER CIRCUIT AND PORTABLE ELECTRONIC DEVICE COMPRISING THE SAME
    • 低电压振荡放大器电路和包含其的便携式电子设备
    • WO99026334A1
    • 1999-05-27
    • PCT/JP1998/005115
    • 1998-11-13
    • H03K3/012H03K3/03H03K3/354H03B5/06H03K3/353
    • H03K3/03H03K3/012H03K3/354
    • A low-voltage oscillation amplifier circuit has an amplifier circuit (120) comprising a switching circuit (110) in which first and second MOSFETs (1, 2) of the same conductivity are connected in series and gate electrodes are connected to each other, a third MOSFET (3) of a first conductivity whose gate and drain electrodes are connected to each other, and a fourth MOSFET (4) of a second conductivity whose gate and drain electrodes are connected to each other. The body potentials of the P- and N-type MOSFETs (4, 3) constituting the amplifier circuit (120) are controlled by a control signal and its inverted signal. The amplifier circuit (120) can be operated on a very low voltage by apparently lowering the threshold voltages of the third and fourth MOSFETs (3, 4). When the switching circuit (110) is turned off to turn off the amplifier circuit, leak current can be almost completely cut off by apparently raising the threshold voltage of the second MOSFET (2).
    • 低压振荡放大器电路具有放大器电路(120),该放大器电路(120)包括开关电路(110),其中具有相同导电性的第一和第二MOSFET(1,2)串联连接,栅电极相互连接, 栅极和漏极彼此连接的第一导电体的第三MOSFET(3)和栅极和漏极彼此连接的第二导电体的第四MOSFET(4)。 构成放大器电路(120)的P型和N型MOSFET(4,3)的体电位由控制信号及其反相信号控制。 通过明显降低第三和第四MOSFET(3,4)的阈值电压,放大器电路(120)可以在非常低的电压下工作。 当切换电路(110)关闭以关闭放大器电路时,通过明显提高第二MOSFET(2)的阈值电压,可以将漏电流几乎完全切断。