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    • 31. 发明申请
    • THE TECHNIQUE OF PRODUCTION OF FANCY RED DIAMONDS
    • 粉红色钻石生产技术
    • WO2004113597A1
    • 2004-12-29
    • PCT/RU2004/000205
    • 2004-05-27
    • C30B33/04
    • C30B29/04B01J3/062B01J19/085B01J2203/062B01J2203/0655B01J2203/0695C01B32/28
    • The invention concerns the treatment of diamonds in order to give them different colors and it can be made ise of by gem trade. The Essence of invention: The technique consists in producing isolated substitutional nitrogen atoms, or C centers in the crystal lattice of natural type Ia diamond containing A centers or of natural high-nitrogenous type Ia diamond containing over 800 ppm of nitrogen in the form of A and B1 centers. Natural type Ia diamonds containing A centers are annealed in a high-pressure apparatus at a temperature over 2150 DEG C under stabilizing pressure of 6.0-7.0 Gpa, then irradiated with 5x10 -5x10 cm 2-4 MeV electrons and finally annealed in vacuum at a temperature no lower than 1100 DEG C. Natural high-nitrogenous type Ia diamonds, containing over 800 ppm of nitrogen in the form of A and B1 centers, are irradiated with high-energy electrons with the irradiation dose over 10 cm and are annalead in vacuum at a temperature no lower than 1100 DEG C. Thus Fancy Red diamonds are produced with stable N-V cenetrs absorbing in the 400-to-640 nm range.
    • 本发明涉及钻石的处理以使其具有不同的颜色,并且可以通过宝石贸易来制造。 发明的本质:该技术包括在含有A中心的天然Ia型金刚石或含有超过800ppm氮的形式的天然高氮型Ia金刚石的晶格中产生分离的取代氮原子或C中心,其形式为A 和B1中心。 含有A中心的天然Ia型金刚石在高压设备中在温度超过2150℃,稳定压力为6.0-7.0Gpa的条件下退火,然后用5×10 -5×10 18 cm -2 2- 4 MeV电子,最后在不低于1100℃的温度下真空退火。含有超过800ppm A和B1中心形式的氮的天然高氮型Ia金刚石用高能电子照射 辐射剂量超过10 19 cm -2,并且在不低于1100℃的温度下在真空中放置。因此,在400至640nm范围内吸收的稳定的NV透明层产生花式红色金刚石。
    • 32. 发明申请
    • JADEITE AND ITS PRODUCTION
    • 玉米及其生产
    • WO02048038A2
    • 2002-06-20
    • PCT/US2001/046615
    • 2001-12-05
    • B01J3/06C01B33/20C01B33/26
    • C01B33/26B01J3/062B01J2203/068C01B33/20Y10T428/2982Y10T428/2996
    • A jadeite material has a thickness in excess of about 1.0 mm and CIELAB indices of L* > 42, a* +6. The grain size of the jadeite material is less than about 30 microns and is an equiaxed grain structure. The jadeite material has an optical transmission peak between 500 and 565 nm with an I/Io optical transmission ratio of over 40 %. The first step in making the jadeite material is to wrap a glass block, convertible by HP/HT into jadeite and having a nominal composition of NaAlSi2O6, with a graphite or refractive metal sheet. The wrapped glass block is placed in an HP/HT apparatus, rapidly heated, and subjected therein to a pressure in excess of about 3 GPa and a temperature in excess of about 1000 DEG C for a time adequate to convert the glass block into jadeite. The jadeite material then is cooled and the pressure subsequently released.
    • 翡翠材料的厚度超过约1.0mm,CIELAB指数L *> 42,a * <-6,b *> +6。 翡翠材料的晶粒尺寸小于约30微米,是等轴晶粒结构。 翡翠材料的光传输峰值在500和565nm之间,I / Io光传输比率超过40%。 制造翡翠材料的第一步是将玻璃块包裹,由HP / HT转化为翡翠,并具有标称组成的NaAlSi 2 O 6与石墨或折射金属片。 将包裹的玻璃块放置在HP / HT装置中,快速加热,并在其中进行超过约3GPa的压力和超过约1000℃的温度足以将玻璃块转化成翡翠的时间。 然后将翡翠材料冷却并随后释放压力。
    • 36. 发明申请
    • HIGH PRESSURE REACTOR AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA
    • 高压反应器及其在超临界氨基酸中生长III族氮化物晶体的方法
    • WO2016210428A1
    • 2016-12-29
    • PCT/US2016/039622
    • 2016-06-27
    • SIXPOINT MATERIALS, INC.SEOUL SEMICONDUCTOR CO., LTD.
    • HASHIMOTO, Tadao
    • C30B7/10C30B29/40B01J3/00B01J3/04B01J3/06
    • C30B29/406B01J3/008B01J3/042B01J3/062C30B7/105
    • Provided is a high-pressure reactor suitable for a high-pressure process using supercritical ammonia grow bulk crystal of group III nitride having lateral dimension larger than 2 inches or to form various transition metal nitrides. The reactor has nutrient distributed along the reactor's longitudinal axis and seed material positioned at the reactor's inner wall and along the reactor's longitudinal axis. Nutrient diffuses through supercritical ammonia from the reactor's longitudinal axis and deposits on the seed material positioned by the reactor's inner wall. Both the nutrient and seed material are heated by the same heater. Material growth can primarily be due to material diffusion through supercritical ammonia. This configuration and methodology reduce convective movement of supercritical ammonia due to temperature differential, providing a more quiescent environment in which group III nitride or transition metal nitride is formed.
    • 提供了适用于使用横向尺寸大于2英寸的III族氮化物的超临界氨生长体晶体或形成各种过渡金属氮化物的高压法的高压反应器。 反应器具有沿着反应器的纵向轴线的分布的营养物质和位于反应器的内壁和沿着反应器的纵向轴线的种子材料。 营养物通过超临界氨从反应器的纵轴扩散并沉积在由反应器内壁定位的种子材料上。 营养物质和种子材料均由相同的加热器加热。 材料生长主要是由于通过超临界氨的物质扩散。 这种配置和方法减少了由于温差引起的超临界氨的对流运动,提供了形成III族氮化物或过渡金属氮化物的更静态的环境。
    • 37. 发明申请
    • PRESS APPARATUS FOR ULTRA-HIGH PRESSURES AND METHODS OF CONTROLLING SAME
    • 用于超高压的压力设备及其控制方法
    • WO2016146570A1
    • 2016-09-22
    • PCT/EP2016/055430
    • 2016-03-14
    • ELEMENT SIX (UK) LIMITED
    • VUKOVIC, Dragan
    • B01J3/06
    • B01J3/067B01J3/062B01J2203/062B01J2203/0645B01J2203/0655B01J2203/066B01J2203/068B01J2203/0685
    • Press apparatus for pressurising a capsule to at least one gigapascal (GPa) and a method of controlling the press apparatus. The press apparatus comprises a frame for accommodating the capsule and at least four load devices, each securable in relation to the frame and capable of applying variable load onto the capsule in response to control of a first or second variable operating parameter. Measurement mechanisms for measuring the values of first or second operating parameters in respect of each of the load devices are provided. A control mechanism controls each load device according to a set-point for the first or the second operating parameter. The method includes controlling a first of the load devices according to a set-point of the first operating parameter; measuring the second operating parameter in respect of the first load device; and controlling a second of the load devices according to the measured second operating parameter in respect of the first load device.
    • 用于将胶囊加压至至少一个千兆(GPa)的压制装置和控制该压制装置的方法。 压制装置包括用于容纳胶囊的框架和至少四个负载装置,每个装载装置可相对于框架固定,并且能够响应于第一或第二可变操作参数的控制而将可变负载施加到胶囊上。 提供了用于测量关于每个负载装置的第一或第二操作参数的值的测量机构。 控制机构根据第一或第二操作参数的设定点来控制每个负载装置。 该方法包括根据第一操作参数的设定点来控制第一负载装置; 测量关于所述第一负载装置的所述第二操作参数; 以及根据所测量的关于所述第一负载装置的第二操作参数来控制所述负载装置中的第二负载装置。