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31. 发明申请

WO2012010292A1 SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b] [1]-BENZOTHIOPHENES 审中-公开
标题翻译：基于取代的[1]苯并[3,2-b] [1] - 苯并噻吩的半导体
公开(公告)号：WO2012010292A1
公开(公告)日：2012-01-26
申请号：PCT/EP2011/003605
申请日：2011-07-19
申请人： HERAEUS CLEVIOS GMBH , MEYER-FRIEDRICHSEN, Timo , REUTER, Knud , ELSCHNER, Andreas , HALIK, Marcus
发明人： MEYER-FRIEDRICHSEN, Timo , REUTER, Knud , ELSCHNER, Andreas , HALIK, Marcus
IPC分类号： C07D495/04 , H01L51/00
CPC分类号： H01L51/0074 , C07D495/04 , C07F9/655354 , H01L51/0002 , H01L51/0558 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to compounds of the general formula (I) wherein Z corresponds to - a C 1 -C 22 -alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR 1 ) 2 (wherein the radicals R 1 can be identical or different and correspond to a hydrogen atom or C 1 -C 12 -alkyl), sulphonic acid groups -SO 3 H, halosilyl radicals -SiHal n R 2 3-n (R 2 = C 1 -C 18 - alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR 3 ) 3 (R 3 = C 1 -C 18 -alkyl), - a C 5 -C 12 -cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups— P(O)(OR 1 ) 2 (wherein the radicals R 1 can be identical or different and correspond to a hydrogen atom or C 1 -C 12 -alkyl), sulphonic acid groups -SO 3 H, halosilyl radicals -SiHal n R 2 3-n (R 2 = C 1 -C 18 - alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR 3 ) 3 (R 3 = C 1 -C 18 -alkyl), - a C 6 -C 14 -aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR 1 ) 2 (wherein the radicals R 1 can be identical or different and correspond to a hydrogen atom or C 1 -C 12 -alkyl), sulphonic acid groups -S0 3 H, halosilyl radicals -SiHal n R 2 3-n (R 2 = C 1 -C 18 - alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR 3 ) 3 (R 3 = C 1 -C 18 -alkyl), or - a C 7 -C 30 -aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR 1 ) 2 (wherein the radicals R 1 can be identical or different and correspond to a hydrogen atom or C 1 -C 12 -alkyl), sulphonic acid groups -SO 3 H, halosilyl radicals -SiHal n R 2 3-n (R 2 = C 1 -C 18 - alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR 3 ) 3 (R 3 = C 1 -C 18 -alkyl) or a trialkylsilyl radical R 5 R 6 R 7 Si, in which R 5 , R 6 , R 7 independently of each other are identical or different C 1 -C 18 -alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).
摘要翻译：本发明涉及通式（I）的化合物，其中Z对应于被卤素，膦酸或膦酸酯基-P（O）（OR 1）2取代的C 1 -C 22 - 烷基（其中基团R 1 可以相同或不同，并且对应于氢原子或C 1 -C 12烷基），磺酸基-SO 3 H，卤代甲硅烷基-SiHalnR 2 3-n（R 2 = C 1 -C 18烷基，n = 1至3的整数），硫醇基或三烷氧基甲硅烷基-Si（OR 3）3（R 3 = C 1 -C 18烷基）， - 被卤素，膦酸或膦酸酯基-P（O）（OR 1）2取代的C 5 -C 12环烷基（其中基团R 1可以相同或不同并且对应于氢原子或C 1 -C 12 - 烷基），磺酸基-SO 3 H，卤代甲硅烷基-SiHaln R 3-n（R 2 = C 1 -C 18烷基，n =整数 1至3），硫醇基或三烷氧基甲硅烷基-Si（OR 3）3（R 3 = C 1 -C 18 - 烷基）， - 来自噻吩基，吡咯基，呋喃基或吡啶基的C 6 -C 14 - 芳基或杂芳基由卤素，膦酸或膦酸酯基-P（O）（OR 1）2（其中基团R 1可以相同或不同并且对应于氢原子或C 1 -C 12 - 烷基）取代的基团，磺酸基-S03H ，卤代甲硅烷基-SiHalnR2 3-n（R2 = C1-C18烷基，n = 1-3的整数），硫醇基或三烷氧基甲硅烷基-Si（OR3）3（R3 = C1-C18-烷基）任选被卤素，膦酸或膦酸酯基团-P（O）（OR 1）2取代的C 7 -C 30 - 芳烷基（其中基团R 1可以相同或不同并且对应于氢原子或C 1 -C 12 - 烷基），磺酸基-SO 3 H，卤代甲硅烷基-SiHalnR 2 3-n（R 2 = C 1 -C 18烷基，n = 1至3的整数），硫醇基或三烷氧基甲硅烷基-Si（OR 3）3（R 3 = C18烷基）或三烷基甲硅烷基R5R6R7Si，其中R5，R6，R7彼此独立地是相同或不同的C1-C18-烷基。本发明还涉及半导体层，电子部件，电子部件的制造方法，通过该方法得到的电子部件和通式（I）的化合物的用途。

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