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31. 发明申请

WO03028090A3 INTEGRATION OF BARRIER LAYER AND SEED LAYER 审中-公开
标题翻译：障碍层和种植层的整合
公开(公告)号：WO03028090A3
公开(公告)日：2003-09-12
申请号：PCT/US0228715
申请日：2002-09-09
申请人： APPLIED MATERIALS INC
发明人： CHUNG HUA , CHEN LING , YU JICK , CHANG MEI
IPC分类号： C23C14/06 , C23C30/00 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： C23C14/06 , C23C30/00 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to filling of a feature by depositing a barrier layer (1204), depositing a seed layer (1502) over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper alloy seed layer (1512) deposited over the barrier layer and a second seed layer (1514) deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.
摘要翻译：本发明一般涉及通过在阻挡层上沉积阻挡层（1204），沉积种子层（1502）以及在种子层上沉积导电层来填充特征。在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。在另一个实施方案中，种子层包括沉积在阻挡层上的铜合金晶种层（1512）和沉积在铜合金晶种层上的第二晶种层（1514）。铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。在另一个实施例中，种子层包括第一种子层和第二种子层。第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。

32. 发明申请

WO03001590A3 SYSTEM AND METHOD TO FORM A COMPOSITE FILM STACK UTILIZING SEQUENTIAL DEPOSITION TECHNIQUES 审中-公开
标题翻译：使用顺序沉积技术形成复合膜片的系统和方法
公开(公告)号：WO03001590A3
公开(公告)日：2003-02-20
申请号：PCT/US0219481
申请日：2002-06-20
申请人： APPLIED MATERIALS INC
发明人： MAK ALFRED W , CHANG MEI , BYUN JEONG SOO , CHUNG HUA , SINHA ASHOK , KORI MORIS
IPC分类号： C23C16/30 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76846 , H01L21/28562
摘要： A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer (58). Then, the adhesion layer is serially exposed to third and fourth reactive gases to form a barrier layer (60) adjacent to the adhesion layer. This is followed by deposition of a copper layer adjacent to the barrier layer.
摘要翻译：一种在基板上形成用于铜触点的层叠阻挡层的系统和方法。衬底连续地暴露于第一和第二反应气体以形成粘合层（58）。然后，粘附层连续地暴露于第三和第四反应气体，以形成邻近粘合层的阻挡层（60）。随后在阻挡层附近沉积铜层。

33. 发明申请

WO9928955A3 CHEMICAL VAPOR DEPOSITION OF TITANIUM ON A WAFER COMPRISING AN IN-SITU PRECLEANING STEP 审中-公开
标题翻译：在包含现场预防步骤的波浪中的钛的化学气相沉积
公开(公告)号：WO9928955A3
公开(公告)日：1999-09-16
申请号：PCT/US9823740
申请日：1998-11-06
申请人： APPLIED MATERIALS INC
发明人： SRINIVAS RAMANUJAPURAM A , WU FREDERICK C , VASUDEV ANAND , CHANG MEI , BUCKLEY LAWRENCE D JR , WU LI , BOYLE BRIAN P , HIZUME SHUNICHI , JENNINGS PATRICIA
IPC分类号： C23C16/02 , C23C16/14 , H01L21/285 , H01L21/768 , H01L21/3205 , H01L21/60
CPC分类号： H01L21/76856 , C23C16/0245 , C23C16/14 , H01L21/28556 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： GB9803672e step chemical vapor deposition process for depositing a titanium film over a substrate. A first step of the deposition process includes a plasma pretreatment step in which a pretreatment gas including a hydrogen-containing gas and an inert gas are flowed into a deposition zone of a substrate processing chamber. During this first deposition stage, a plasma is formed from the pretreatment gas and maintained for at least about 5 seconds in order to etch any dielectric material left in the contact area of the substrate and clean the contact area prior to deposition of the titanium layer. Next, during a second deposition stage after the first stage, a titanium-containing source and a reduction agent are introduced into the deposition zone and the plasma formed in the first stage is maintained in order to deposit the titanium layer over the substrate. In a preferred embodiment, the hydrogen-containing source included in the pretreatment gas and the reduction agent in the process gas of the second deposition stage are the same continuous flow of H2.
摘要翻译： GB9803672一步骤化学气相沉积工艺，用于在衬底上沉积钛膜。沉积工艺的第一步包括等离子体预处理步骤，其中包括含氢气体和惰性气体的预处理气体流入基板处理室的沉积区。在该第一沉积阶段期间，从预处理气体形成等离子体并保持至少约5秒，以蚀刻留在基板的接触区域中的任何介电材料，并在沉积钛层之前清洁接触区域。接下来，在第一阶段之后的第二沉积阶段期间，将含钛源和还原剂引入沉积区，并且保持在第一阶段中形成的等离子体以使钛层沉积在衬底上。在优选实施方案中，包含在预处理气体中的含氢源和第二沉积阶段的处理气体中的还原剂是相同的H2连续流。

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