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31. 发明申请

WO2010111286A3 HIGH TEMPERATURE THIN FILM TRANSISTOR ON SODA LIME GLASS 审中-公开
公开(公告)号：WO2010111286A3
公开(公告)日：2010-09-30
申请号：PCT/US2010/028341
申请日：2010-03-23
申请人： APPLIED MATERIALS, INC. , YANG, Ya-Tang , PARK, Beom Soo , WON, Tae K. , CHOI, Soo Young
发明人： YANG, Ya-Tang , PARK, Beom Soo , WON, Tae K. , CHOI, Soo Young
IPC分类号： H01L29/786 , H01L21/205
摘要： The present invention generally comprises a low cost TFT and a method of manufacturing a TFT. For TFTs, soda lime glass would be an attractive alternative to non-alkali glass, but a soda lime glass substrate will permit sodium to diffuse into the active layer and degrade the performance of the TFT. Substrates comprising a polyimide, because they are flexible, would also be attractive to utilize instead of non-alkali glass substrates, but the plastic substrates permit carbon to diffuse into the active layer. By depositing a silicon oxynitride adhesion layer over the soda lime glass substrate and a silicon rich barrier layer over the adhesion layer, diffusion may be reduced and deposition may occur at high temperatures. Thus, a lower cost TFT may be produced with a soda lime glass substrate or a substrate comprising a polyimide as compared to a non-alkali glass substrate.

32. 发明申请

WO2010083271A2 SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
标题翻译：基础支持与气体介绍开幕
公开(公告)号：WO2010083271A2
公开(公告)日：2010-07-22
申请号：PCT/US2010/020979
申请日：2010-01-14
申请人： APPLIED MATERIALS, INC. , KIM, Sam H. , WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , TINER, Robin L. , PARK, Beom Soo
发明人： KIM, Sam H. , WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , TINER, Robin L. , PARK, Beom Soo
IPC分类号： H01L21/683 , H01L21/687 , H01L21/203 , H01L21/205
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当大面积基板被放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全地与基板支撑件齐平。气囊可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并导致基板粘附到基板支撑件。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

33. 发明申请

WO2009126827A3 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
公开(公告)号：WO2009126827A3
公开(公告)日：2009-10-15
申请号：PCT/US2009/040105
申请日：2009-04-09
申请人： APPLIED MATERIALS, INC. , FURUTA, Gaku , CHOI, Young-Jin , CHOI, Soo Young , PARK, Beom, Soo , WHITE, John, M. , ANWAR, Suhail , TINER, Robin, L.
发明人： FURUTA, Gaku , CHOI, Young-Jin , CHOI, Soo Young , PARK, Beom, Soo , WHITE, John, M. , ANWAR, Suhail , TINER, Robin, L.
IPC分类号： H01L21/205
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.

34. 发明申请

WO2009039343A1 PECVD PROCESS CHAMBER WITH COOLED BACKING PLATE 审中-公开
标题翻译：带冷却背板的PECVD工艺室
公开(公告)号：WO2009039343A1
公开(公告)日：2009-03-26
申请号：PCT/US2008/076966
申请日：2008-09-19
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , TINER, Robin, L. , WHITE, John, M.
发明人： CHOI, Soo Young , TINER, Robin, L. , WHITE, John, M.
IPC分类号： C30B25/02 , C23C16/458 , H01L21/67
CPC分类号： C23C16/24 , C23C16/45565 , C23C16/5096 , H01J37/3244 , H01J37/32522
摘要： The invention generally relates to a plasma enhanced chemical vapor deposition chamber for depositing amorphous or microcrystalline silicon on a glass substrate to fabricate solar voltaic cells. The chamber includes a backing plate having at least one fluid receiving conduit to receive cooling fluid to remove heat generated within the chamber by the plasma, thereby stabilizing and cooling the backing plate to assure the uniformity of deposition of materials on the surface of the substrate.
摘要翻译：本发明一般涉及用于在玻璃基板上沉积非晶或微晶硅以制造太阳能电池的等离子体增强化学气相沉积室。该腔室包括具有至少一个流体接收导管以便接收冷却流体以利用等离子体去除室内产生的热量的背板，从而稳定和冷却背板，以确保材料在衬底表面上的沉积的均匀性。

35. 发明申请

WO2008147696A1 METHODS FOR DEPOSITING A SILICON LAYER ON A LASER SCRIBED TCO LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS 审中-公开
标题翻译：用于在太阳能电池应用中使用的激光可控TCO层上沉积硅层的方法
公开(公告)号：WO2008147696A1
公开(公告)日：2008-12-04
申请号：PCT/US2008/063613
申请日：2008-05-14
申请人： APPLIED MATERIALS, INC. , WON, Tae Kyung , CHOI, Soo Young , CHAE, YongKee , LI, Liwei , SHENG, Shuran
发明人： WON, Tae Kyung , CHOI, Soo Young , CHAE, YongKee , LI, Liwei , SHENG, Shuran
IPC分类号： H01L21/00
CPC分类号： H01L21/68735
摘要： Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. The method includes a method of laser scribing a TCO layer for solar cell applications. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include laser scribing a cell-integrated region of a TCO layer disposed on a substrate for solar applications, the TCO layer having a laser scribing free periphery region outward of the cell-integrated region, the periphery region having a width between about 10 mm and about 30 mm measured from an edge of the substrate, transferring the scribed substrate into a deposition chamber, and depositing a silicon containing layer on the TCO layer in the deposition chamber.
摘要翻译：提供了减少传导导电氧化物（TCO）层缺陷的方法和装置。该方法包括激光划片用于太阳能电池应用的TCO层的方法。在一个实施例中，用于在透射导电氧化物（TCO）层上沉积硅层的方法可以包括激光刻划设置在用于太阳能应用的衬底上的TCO层的电池集成区域，TCO层具有激光划线自由周边所述外围区域具有从所述基板的边缘测量的约10mm至约30mm之间的宽度，将所述划线基板转印到沉积室中，并且在所述TCO层上沉积含硅层在沉积室中。

36. 发明申请

WO2008127920A2 SILICON NITRIDE PASSIVATION FOR A SOLAR CELL 审中-公开
标题翻译：用于太阳能电池的氮化硅钝化
公开(公告)号：WO2008127920A2
公开(公告)日：2008-10-23
申请号：PCT/US2008/059674
申请日：2008-04-08
申请人： APPLIED MATERIALS, INC. , ZHOU, Lisong , DIXIT, Sangeeta , CHOI, Soo Young
发明人： ZHOU, Lisong , DIXIT, Sangeeta , CHOI, Soo Young
IPC分类号： B05D5/12
CPC分类号： C23C16/345 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A silicon nitride layer may be formed with a suitable refractive index, mass density, and hydrogen concentration so that the layer may serve as an ARC/passivation layer on a solar cell substrate. The silicon nitride layer may be formed on a solar cell substrate by adding a hydrogen gas diluent to a conventional precursor gas mixture during the deposition process. Alternatively, the silicon nitride layer may be formed on a solar cell substrate by using a precursor gas mixture consisting essentially of silane and nitrogen. To improve deposition chamber throughput, the silicon nitride layer may be a dual stack film that includes a low-hydrogen interface layer and a thicker bulk silicon nitride layer. Placing a plurality of solar cell substrates on a substrate carrier and transferring the substrate carrier into the deposition chamber may further enhance deposition chamber throughput.
摘要翻译：可以形成具有合适的折射率，质量密度和氢浓度的氮化硅层，使得该层可以用作太阳能电池基板上的ARC /钝化层。氮化硅层可以通过在沉积工艺期间向常规的前体气体混合物中加入氢气稀释剂而形成在太阳能电池基板上。或者，可以通过使用主要由硅烷和氮组成的前体气体混合物在太阳能电池基板上形成氮化硅层。为了提高沉积室的生产量，氮化硅层可以是包括低氢界面层和较厚体积氮化硅层的双层叠膜。将多个太阳能电池基板放置在基板载体上并将基板载体转移到沉积室中可进一步增强沉积室的生产量。

37. 发明申请

WO2007112179A3 METHOD AND APPARATUS FOR IMPROVING UNIFORMITY OF LARGE-AREA SUBSTRATES 审中-公开
公开(公告)号：WO2007112179A3
公开(公告)日：2007-10-04
申请号：PCT/US2007/063450
申请日：2007-03-07
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , WHITE, John, M.
发明人： CHOI, Soo Young , WHITE, John, M.
IPC分类号： C23C16/00
摘要： Embodiments of the present invention generally provide methods and apparatus for improving the uniformity of a film deposited on a large-area substrate, particularly for films deposited in a PECVD system. In one embodiment, a plasma-processing chamber is configured to be asymmetrical relative to a substrate in order to compensate for plasma density non-uniformities in the chamber caused by unwanted magnetic fields. In another embodiment, a plasma-processing chamber is adapted to create a neutral current bypass path that reduces electric current flow through a magnetic field-generating feature in the chamber. In another embodiment, a method is provided for depositing a uniform film on a large-area substrate in a plasma-processing chamber. The chamber is made electrically symmetric during processing by creating a neutral current bypass path, wherein the neutral current bypass path substantially reduces neutral current flow through a magnetic field-generating feature in the chamber.

38. 发明申请

WO2010005439A1 SOLAR CELLS AND METHODS AND APPARATUSES FOR FORMING THE SAME 审中-公开
标题翻译：太阳能电池及其形成方法及装置
公开(公告)号：WO2010005439A1
公开(公告)日：2010-01-14
申请号：PCT/US2008/069685
申请日：2008-07-10
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , LI, Liwei
发明人： CHOI, Soo Young , LI, Liwei
IPC分类号： C23C16/00
CPC分类号： H01L31/1876 , C23C16/24 , C23C16/4404 , C23C16/4408 , H01L21/67161 , H01L21/67745 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521 , Y10S438/906
摘要： Embodiments of the present invention generally provide an apparatus and method for forming an improved thin film single or multi-junction solar cell in a substrate processing device. One embodiment provides a system that contains at least one processing chamber that is adapted to deposit one or more layers that form a portion of a solar cell device. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the processing chamber by performing a cleaning process on the inner surfaces of the processing chamber prior to depositing the one or more layers on a substrate. The cleaning process may include depositing a layer, such as a seasoning layer or passivation layer, that tends to trap contaminants found in the processing chamber. Other embodiments of the invention may provide scheduling and/or positioning the cleaning processing steps at desirable times within a substrate processing sequence.
摘要翻译：本发明的实施例通常提供一种用于在衬底处理装置中形成改进的薄膜单结或多结太阳能电池的装置和方法。一个实施例提供一种系统，其包含适于沉积形成太阳能电池器件的一部分的一个或多个层的至少一个处理室。在一个实施例中，采用一种方法来在将一个或多个层沉积在衬底上之前通过在处理室的内表面上进行清洁处理来减少在处理室中处理的衬底的污染。清洁过程可以包括沉积倾向于捕获在处理室中发现的污染物的层，例如调味层或钝化层。本发明的其他实施例可以提供在衬底处理序列内的期望时间调度和/或定位清洁处理步骤。

39. 发明申请

WO2009059238A1 PLASMA TREATMENT BETWEEN DEPOSITION PROCESSES 审中-公开
标题翻译：沉积过程之间的等离子体处理
公开(公告)号：WO2009059238A1
公开(公告)日：2009-05-07
申请号：PCT/US2008/082135
申请日：2008-10-31
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , CHAE, Yong Kee , SHENG, Shuran , LI, Liwei
发明人： CHOI, Soo Young , CHAE, Yong Kee , SHENG, Shuran , LI, Liwei
IPC分类号： H01L21/205
CPC分类号： H01L21/0262 , H01L21/02532 , H01L21/02576 , H01L21/02595 , H01L21/02667 , H01L31/0236 , H01L31/02366 , H01L31/075 , H01L31/076 , H01L31/186 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention include an improved method of forming a thin film solar cell device using a plasma processing treatment between two or more deposition steps. Embodiments of the invention also generally provide a method and apparatus for forming the same. The present invention may be used to advantage to form other single junction, tandem junction, or multi-junction solar cell devices.
摘要翻译：本发明的实施例包括使用在两个或更多个沉积步骤之间的等离子体处理处理来形成薄膜太阳能电池器件的改进方法。本发明的实施例还通常提供了用于形成该方法和装置的方法和装置。本发明可用于形成其它单结，串联结或多结太阳能电池器件。

40. 发明申请

WO2009055388A1 NIP-NIP THIN-FILM PHOTOVOLTAIC STRUCTURE 审中-公开
标题翻译： NIP-NIP薄膜光伏结构
公开(公告)号：WO2009055388A1
公开(公告)日：2009-04-30
申请号：PCT/US2008/080641
申请日：2008-10-21
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , CHOI, Soo Young
发明人： WHITE, John M. , CHOI, Soo Young
IPC分类号： H01L31/042
CPC分类号： H01L31/076 , H01L31/0475 , H01L31/18 , H01L31/1824 , H01L31/1884 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A thin film multi-junction photovoltaic structure is presented as well as methods and apparatus for forming the same. The photovoltaic structure comprises first and second NIP junctions formed over a translucent substrate.
摘要翻译：介绍了薄膜多结光伏结构及其形成方法和装置。光伏结构包括在半透明基板上形成的第一和第二NIP结。

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