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21. 发明申请

WO2008066091A1 DEVICE, AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：装置及其制造方法
公开(公告)号：WO2008066091A1
公开(公告)日：2008-06-05
申请号：PCT/JP2007/072991
申请日：2007-11-21
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YUKAWA, Mikio , SUGISAWA, Nozomu , NAGATA, Takaaki , YOSHITOMI, Shuhei , AIZAWA, Michiko
发明人： YUKAWA, Mikio , SUGISAWA, Nozomu , NAGATA, Takaaki , YOSHITOMI, Shuhei , AIZAWA, Michiko
IPC分类号： H01L27/28 , H01L21/02 , H01L21/336 , H01L27/10 , H01L27/12 , H01L29/786 , H01L51/05
CPC分类号： H01L51/105 , G11C13/0016 , G11C13/004 , H01L27/283 , H01L51/006 , H01L51/0591
摘要： In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin.
摘要翻译：在制造柔性存储器件和半导体器件的方法中，在具有分离层的衬底上形成包括元件层和密封元件层的绝缘层的堆叠，并且将堆叠与分离层分离。元件层包括在一对电极，第一电极层和第二电极层之间具有含有有机化合物的层的存储元件，并且使用含有锡的合金层形成所述一对电极层中的至少一个。柔性存储器件和半导体器件包括具有在一对电极之间含有有机化合物的层的存储元件，第一电极层和第二电极层，其中使用合金形成一对电极层中的至少一个含锡层。

22. 发明申请

WO2007105575A1 MEMORY ELEMENT AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：存储元件和半导体器件
公开(公告)号：WO2007105575A1
公开(公告)日：2007-09-20
申请号：PCT/JP2007/054485
申请日：2007-02-28
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YUKAWA, Mikio , SUGISAWA, Nozomu
发明人： YUKAWA, Mikio , SUGISAWA, Nozomu
IPC分类号： H01L27/28 , H01L27/10 , H01L29/786 , H01L51/05
CPC分类号： H01L27/13 , H01L27/101
摘要： It is an object of the present invention to reduce variations in behavior of each memory element. In addition, it is another object of the present invention to obtain a semiconductor device, on which the memory element is mounted, which is superior in terms of performance and reliability. A memory element of the present invention includes in its structure a first conductive layer; a semiconductor layer; an organic compound layer; and a second conductive layer, where the semiconductor layer and the organic compound layer are interposed between the first conductive layer and the second conductive layer, and the semiconductor layer is formed to be in contact with the first conductive layer and/or the second conductive layer. With such a structure, variations in behavior of each memory element are reduced.
摘要翻译：本发明的目的是减少每个存储元件的行为变化。此外，本发明的另一个目的是获得其性能和可靠性方面优于其上安装有存储元件的半导体器件。本发明的记忆元件在其结构中包括第一导电层; 半导体层; 有机化合物层; 以及第二导电层，其中半导体层和有机化合物层介于第一导电层和第二导电层之间，并且半导体层形成为与第一导电层和/或第二导电层接触。利用这种结构，减少了每个存储元件的行为变化。

23. 发明申请

WO2013153931A1 GRAPHENE OXIDE, POSITIVE ELECTRODE FOR NONAQUEOUS SECONDARY BATTERY USING GRAPHENE OXIDE, METHOD OF MANUFACTURING POSITIVE ELECTRODE FOR NONAQUEOUS SECONDARY BATTERY, NONAQUEOUS SECONDARY BATTERY, AND ELECTRONIC DEVICE 审中-公开
标题翻译：用于使用氧化烯的非水性二次电池的正极，用于非水性二次电池的制造方法，非电解二次电池和电子装置的方法
公开(公告)号：WO2013153931A1
公开(公告)日：2013-10-17
申请号：PCT/JP2013/058203
申请日：2013-03-14
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： TODORIKI, Hiroatsu , YUKAWA, Mikio , SAITO, Yumiko , YAMAKAJI, Masaki , YATABE, Rika , IKENUMA, Tatsuya
IPC分类号： C01B31/00 , C01B25/45 , H01M4/13 , H01M4/136 , H01M4/139 , H01M4/1397 , H01M4/58 , H01M4/62
CPC分类号： H01M4/625 , C01B32/23 , H01M4/136 , H01M4/364 , H01M4/366 , H01M4/5825 , H01M4/624 , H01M10/052
摘要： A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the weight ratio of oxygen to carbon is greater than or equal to 0.405.
摘要翻译：提供了用作用于形成具有高导电性的活性材料层的导电添加剂的原料的石墨烯氧化物，其具有少量的导电添加剂。提供了使用石墨烯氧化物作为导电添加剂的非水系二次电池用正极。氧化石墨烯用作非水系二次电池用正极中的导电性添加剂的原料，氧化石墨烯中的氧与碳的重量比大于或等于0.405。

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