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    • 25. 发明申请
    • PIEZOELECTRIC STRUCTURES HAVING CONTROLLABLE OPTICAL SURFACES
    • 具有可控光学表面的压电结构
    • WO03005100A3
    • 2003-10-02
    • PCT/US0212913
    • 2002-04-24
    • MOTOROLA INC
    • KLOSOWIAK TOMASZ LGAMOTA DANIEL RLEMPKOWSKI ROBERT B
    • G02B26/08H01L41/22H01L27/20
    • G02B26/0858H01L41/319
    • High quality epitaxial layers of monocrystalline materials (126) can be grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (104) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Further, various shaped piezoelectric structures (132) having optical surfaces (134) may be disposed on the overlying monocrystalline layer for optical switching and controlled manipulation of light signals.
    • 通过形成用于生长单晶层的顺应性衬底,可以将单晶材料(126)的高质量外延层生长在覆盖单晶衬底(102),例如大硅晶片上。 容纳缓冲层(104)包括通过氧化硅的非晶界面层(108)与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外,顺应性衬底的形成可以包括利用表面活性剂增强的外延,将单晶硅外延生长到单晶氧化物上,以及Zintl相材料的外延生长。 此外,具有光学表面(134)的各种成形的压电结构(132)可以设置在上覆单晶层上,用于光信号的光学切换和受控操纵。