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    • 24. 发明申请
    • ANTI-REFLECTIVE COATINGS USING VINYL ETHER CROSSLINKERS
    • 使用乙烯基交联剂的抗反射涂层
    • WO2008109198A1
    • 2008-09-12
    • PCT/US2008/051948
    • 2008-01-24
    • BREWER SCIENCE INC.GUERRERO, Douglas, J.MERCADO, Ramil-Marcelo, L.
    • GUERRERO, Douglas, J.MERCADO, Ramil-Marcelo, L.
    • G03F7/11
    • G03F7/091G03F7/0392
    • Novel, developer soluble anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a polymer and/or oligomer having acid functional groups and dissolved in a solvent system along with a crosslinker, a photoacid generator, and optionally a chromophore. The preferred acid functional group is a carboxylic acid, while the preferred crosslinker is a vinyl ether crosslinker. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light (and optionally a post exposure bake), the cured compositions will decrosslink, rendering them soluble in typical photoresist developing solutions (e.g., alkaline developers). In one embodiment, the compositions can be used to form ion implant areas in microelectronic substrates.
    • 提供了新颖的开发可溶性抗反射涂层组合物和使用这些组合物的方法。 组合物包含具有酸官能团并与交联剂,光致酸发生剂和任选的发色团一起溶解在溶剂体系中的聚合物和/或低聚物。 优选的酸官能团是羧酸,而优选的交联剂是乙烯基醚交联剂。 在使用中,将组合物施用于基材并进行热交联。 在曝光(和任选地曝光后烘烤)时,固化的组合物将脱链,使其溶于典型的光致抗蚀剂显影溶液(例如碱性显影剂)中。 在一个实施方案中,组合物可用于在微电子衬底中形成离子注入区域。
    • 25. 发明申请
    • CONTACT PLANARIZATION APPARATUS
    • 联系平面设备
    • WO2008079582A1
    • 2008-07-03
    • PCT/US2007/085772
    • 2007-11-28
    • BREWER SCIENCE INC.MCCUTCHEON, Jeremy, W.BROWN, Robert, D.
    • MCCUTCHEON, Jeremy, W.BROWN, Robert, D.
    • H01L21/304
    • G03F7/168H01L21/67092H01L21/67115
    • A contact planarization apparatus includes a lower membrane assembly, an upper membrane assembly, a differential pressure assembly, and a curing or reflowing assembly. The lower membrane assembly supports a substrate to be planarized and biases it toward the upper membrane assembly under the influence of the pressure differential assembly. The upper membrane assembly planarizes the coating on the substrate under the influence of the differential pressure assembly and includes a flexible sheet which is supported above the substrate stage and below the curing or reflowing assembly via a vacuum force applied by the differential pressure assembly. The differential pressure assembly moves the lower and upper membrane assemblies relative to one another to planarize the coating on the substrate entirely through the application of vacuum and pressure forces. The differential pressure assembly includes a top pressure chamber positioned above the upper face of the upper sheet, a bottom pressure chamber positioned below the lower face of the lower sheet, and a central pressure chamber positioned generally between the lower face of the upper sheet and the upper face of the lower sheet.
    • 接触平面化装置包括下膜组件,上膜组件,差压组件和固化或回流组件。 下膜组件支撑待平坦化的基底,并在压差组件的影响下将其偏向上膜组件。 上膜组件在差压组件的影响下平坦化基板上的涂层,并且包括柔性片,其通过由差压组件施加的真空力被支撑在基底台上并在固化或回流组件之下。 差压组件相对于彼此移动下部膜组件和上部膜组件,以通过施加真空和压力力使衬底上的涂层完全平坦化。 差压组件包括位于上板的上表面上方的顶压室,位于下板下表面下方的底压室,以及通常位于上板的下表面和 下片的上表面。
    • 26. 发明申请
    • DEPOSITION OF POLYMERIC MATERIALS AND PRECURSORS THEREFOR
    • 聚合材料及其前身的沉积
    • WO2006101902A3
    • 2007-03-22
    • PCT/US2006009347
    • 2006-03-15
    • BREWER SCIENCE INCSENKEVICH JOHN J
    • SENKEVICH JOHN J
    • C23C16/00
    • B05D1/60H01L21/312
    • Substituted paracyclophanes are particularly useful as precursors in the formation of a cross-linkable polymer on a deposition substrate such as an electronic device being processed. The paracyclophane precursor including a cross-linkable substituent such as an alkynyl is cracked at the phenyl linkages. The substrate is subjected to the*cracked precursor. As a result, an organic polymer is formed on the substrate. Cross-linking of the polymer through reaction, e.g. thermally induced reaction, of the cross-linkable substituents produces a thermally stable cross-linked polymer. The deposition of such cross-linked polymer is particularly useful for sealing ultra low k dielectric materials used in the damascene process in the production of integrated circuits. Alternatively the polymer is also advantageous as an adhesive in wafer-to-wafer bonding. Alternatively, the polymer is useful as a hardmask to replace silicon nitride and silicon carbide in the back-end-of-the-line processing of electronic devices.
    • 取代的副环己烷特别可用作在沉积基底上形成可交联聚合物的前体,例如正在加工的电子器件。 包括可交联的取代基如炔基的对环芳烃前体在苯基键处裂解。 使基板经受*裂纹前体。 结果,在基板上形成有机聚合物。 通过反应交联聚合物,例如, 可交联取代基的热诱导反应产生热稳定的交联聚合物。 这种交联聚合物的沉积特别可用于密封用于集成电路生产中的镶嵌工艺中使用的超低k电介质材料。 或者,聚合物在晶片到晶片结合中也是有利的。 或者,聚合物可用作硬掩模以在电子设备的后端处理中替代氮化硅和碳化硅。
    • 28. 发明申请
    • ANTI-REFLECTIVE COMPOSITIONS COMPRISING TRIAZINE COMPOUNDS
    • 包含TRIAZINE化合物的抗反射组合物
    • WO2004036311A2
    • 2004-04-29
    • PCT/US2003/029819
    • 2003-09-19
    • BREWER SCIENCE, INC.
    • ENOMOTO, TomoyukiNAKAYAMA, KeisukePULIGADDA, Rama
    • G03F
    • G03F7/091Y10T428/31938
    • The present invention relates to an anti-reflective coating composition characterized by comprising a resin made from triazine compounds having at least two nitrogen atoms substituted a hydroxymethyl group and/or alkoxymehyl group, and a light absorbing compound and/or a light absorbing resin. The present invention offers an anti-reflective coating composition for the anti-reflective coating having high light absorption property of the light used for the lithography process in the preparation of semiconductor device, showing high reflective light preventing effect, being used at thinner film thickness more than before, and having greater dry etching rate in comparison to photoresist layer.
    • 本发明涉及一种抗反射涂料组合物,其特征在于包含由具有至少两个氮原子取代羟甲基和/或烷氧基甲基的三嗪化合物制成的树脂,以及光吸收化合物和/或光吸收树脂。 本发明提供了一种用于抗反射涂层的抗反射涂层组合物,其在制备半导体器件时用于光刻工艺的光具有高的光吸收特性,显示出高的防反射光效果,在较薄的膜厚度下使用 并且与光致抗蚀剂层相比具有更大的干蚀刻速率。