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21. 发明申请

WO2003007368A2 METHOD OF FORMING NITRIDE CAPPED CU LINES WITH REDUCED ELECTROMIGRATION ALONG THE CU/NITRIDE INTERFACE 审中-公开
标题翻译：在铜/氮化物界面上形成具有减少的电迁移的氮化物铠装铜线的方法
公开(公告)号：WO2003007368A2
公开(公告)日：2003-01-23
申请号：PCT/US2002/021262
申请日：2002-07-03
申请人： ADVANCED MICRO DEVICES, INC. , BESSER, Paul, R. , NGO, Minh, Van , ZHAO, Larry
发明人： BESSER, Paul, R. , NGO, Minh, Van , ZHAO, Larry
IPC分类号： H01L21/768
CPC分类号： H01L21/76862 , H01L21/3185 , H01L21/76834 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The electromigration resistance of nitride capped Cu lines is significantly improved by controlling the nitride deposition conditions to reduce the compressive stress of the deposited nitride layer (40), thereby reducing diffusion along the Cu-nitride interface. Embodiments include deposition a silicon nitride capping layer (40) on inlaid Cu (13A) at a reduced RF power, e.g., about 400 to about 500 watts and an increased spacing, e.g., about 680 to about 720 mils, to reduce the compressive stress of the deposited silicon nitride layer (40) to below about 2 x 10 7 Pascals. Embodiments also include sequentially and contiguously treating the exposed planarized surface of in-laid Cu with a soft plasma containing NH 3 diluted with N 2 , ramping up the introduction of SiH 4 and then initiating plasma enhanced chemical vapor deposition of a silicon nitride capping layer (40), while maintaining substantially the same pressure and N 2 flow rate during plasma treatment, SiH 4 ramp up and silicon nitride deposition. Embodiments also include Cu dual damascene structures formed in dielectric material having a dielectric constant (k) less than about 3.9.
摘要翻译：通过控制氮化物沉积条件以降低沉积的氮化物层（40）的压缩应力，从而减少沿着氮化物 - 氮化物界面的扩散，氮化物覆盖的铜线的电迁移阻力显着提高。实施例包括以降低的RF功率（例如，约400至约500瓦）和增加的间隔（例如，约680至约720密耳）在镶嵌Cu（13A）上沉积氮化硅覆盖层（40）以降低压缩应力沉积的氮化硅层（40）的厚度降至约2×10 -7帕斯卡以下。实施方式还包括用含有用N 2稀释的NH 3的软等离子体顺序地并连续地处理嵌入Cu的暴露的平坦化表面，加速SiH _{4斜升和氮化硅沉积。实施例还包括在具有小于约3.9的介电常数（k）的介电材料中形成的Cu双镶嵌结构。}

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