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    • 22. 发明申请
    • REVERSE CONDUCTING INSULATED GATE POWER SEMICONDUCTOR DEVICE HAVING LOW CONDUCTION LOSSES
    • WO2020193180A1
    • 2020-10-01
    • PCT/EP2020/056779
    • 2020-03-13
    • ABB POWER GRIDS SWITZERLAND AG
    • PAPADOPOULOS, CharalamposRAHIMO, MunafCORVASCE, Chiara
    • H01L29/739H01L29/08H01L29/06H01L29/861
    • A reverse conducting insulated gate power semiconductor device is provided which comprises a plurality of active unit cells (40) and a pilot diode unit cell (50) comprising a second conductivity type anode region (51) in direct contact with a first main electrode (21) and extending from a first main side (11) to a first depth (d1). Each active unit cell (40) comprises a first conductivity type first source layer (41a) in direct contact with the first main electrode (21), a second conductivity type base layer (42) and a first gate electrode (47a), which is separated from the first source layer (41a) and the second conductivity type base layer (42) by a first gate insulating layer (46a) to form a first field effect transistor structure. A lateral size (w) of the anode region (51) in an orthogonal projection onto a vertical plane perpendicular to the first main side (11) is equal to or less than 1 µm. On a first lateral side surface of the anode region (51) a first insulating layer (52a) is arranged and on an opposing second lateral side surface of the anode region (51) a second insulating layer (52b) is arranged. And a distance between the first insulating layer (52a) and the second insulating layer (52b) is equal to or less than 1 µm, the first insulating layer (52a) extending vertically from the first main side (11) to a second depth (d2), and the second insulating layer (52b) extending vertically from the first main side (11) to a third depth (d3), wherein the first depth (d1) is less than the second depth (d2) and less than the third depth (d3).
    • 25. 发明申请
    • ELECTRIC TRANSFORMER ASSEMBLY, METHOD FOR DETERMINING A THERMAL STATE OF AN ELECTRIC TRANSFORMER, AND DETERMINATION DEVICE
    • WO2020178390A1
    • 2020-09-10
    • PCT/EP2020/055883
    • 2020-03-05
    • ABB POWER GRIDS SWITZERLAND AG
    • ISLER, StephanePORCELLATO, Valter
    • H01F27/08H01F27/10H01F27/40H02H7/04G01K7/42
    • A transformer assembly (100) comprises an electric transformer (10), a temperature sensor system (20), and a computation unit (30) for determining a thermal state of the electric transformer (10). The electric transformer (10) includes a cooling device (40) having at least one liquid coolant channel (41) arranged such as to absorb exhaust heat from the electric transformer (10) by means of a liquid coolant that is passed through the liquid coolant channel (41), a heat spreader (42) in thermal communication with the liquid coolant channel (41) for transferring heat from the liquid coolant to a heat dissipation surface (43) of the heat spreader (42), and an air blower (45) arranged and configured to effect an airstream (46) along the heat dissipation surface (43) of the heat spreader (42). The temperature sensor system (20) includes an entering coolant sensor (21) arranged for measuring an entering coolant temperature of the liquid coolant upstream of the cooling device (40) and for providing an entering coolant temperature signal (S1), a leaving coolant sensor (22) arranged for measuring a leaving coolant temperature of the liquid coolant downstream of the cooling device (40) and for providing a leaving coolant temperature signal (S2), an entering airstream sensor (23) arranged for measuring an entering airstream temperature of the airstream (46) upstream of the heat spreader (42) and providing an entering airstream temperature signal (S3), and a leaving airstream sensor (24) arranged for measuring a leaving airstream temperature of the airstream (46) downstream of the heat spreader and providing a leaving airstream temperature signal (S4). The computation unit (30) is configured to receive the sensor signals (S1, S2, S3, S4) from the temperature sensor system (20), and configured to determine a thermal state of the transformer (10), in particular of the cooling device (40) or parts thereof, by relating the sensor signals (S1, S2, S3, S4) to each other.
    • 30. 发明申请
    • BUSHING FOR A POWER SYSTEM
    • WO2020109299A1
    • 2020-06-04
    • PCT/EP2019/082579
    • 2019-11-26
    • ABB POWER GRIDS SWITZERLAND AG
    • ERIKSSON, Göran
    • H01B17/28
    • A bushing (1) for a power system, comprising: a conductor (3), and a condenser core (5), wherein the condenser core (5) comprises a dielectric sheet (11) and a plurality of disjoint regions (9a, 9a, 9c) of electrically conducting material (9) provided on the dielectric sheet (11), wherein the dielectric sheet (11) and the electrically conducting material (9) form a wound structure around the conductor (3), wherein in at least one region (9b) the electrically conducting material (9) is a semiconducting material, wherein the semiconducting material extends more than one turn around the conductor (3), whereby the at least one region (9b) has overlapping edges (15, 17) in the radial direction, and wherein the dielectric sheet (11) extends between the overlapping edges (15, 17) whereby a capacitance is formed between the overlapping edges (15, 17), which capacitance is partly defined by an overlap length of the overlapping edges (15, 17) and which capacitance forms part of a resonance circuit of the at least one region (9b), wherein the overlap length is such that the resonance circuit has a resonance frequency contained in a very fast transient, VFT, spectrum.