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11. 发明申请

WO2009152127A2 TECHNIQUES FOR PROVIDING A MULTIMODE ION SOURCE 审中-公开
标题翻译：提供多个离子源的技术
公开(公告)号：WO2009152127A2
公开(公告)日：2009-12-17
申请号：PCT/US2009/046701
申请日：2009-06-09
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , KURUNCZI, Peter, E. , DORAI, Rajesh , BILOIU, Costel , PLATOW, Wilhelm, P.
发明人： KURUNCZI, Peter, E. , DORAI, Rajesh , BILOIU, Costel , PLATOW, Wilhelm, P.
IPC分类号： H01L21/265
CPC分类号： H01J37/08 , H01J27/08 , H01J27/16 , H01J37/3171 , H01J2237/061 , H01J2237/0817 , H01J2237/082 , H01J2237/0827 , H01J2237/304
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.
摘要翻译：公开了提供多模离子源的技术。在一个特定示例性实施例中，可以将技术实现为用于离子注入的装置，其包括以多种模式操作的离子源，使得第一模式是电弧放电模式，而第二模式是RF模式。

12. 发明申请

WO2008073734A3 MAGNETIC MONITORING OF A FARADAY CUP FOR AN ION IMPLANTER 审中-公开
标题翻译：用于离子植入物的微型杯的磁性监测
公开(公告)号：WO2008073734A3
公开(公告)日：2008-08-07
申请号：PCT/US2007086240
申请日：2007-12-03
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , DZENGELESKI JOSEPH P , EVANS MORGAN D , SCHEUER JAY THOMAS , SHETTY ASHWIN , SWENSON KENNETH
发明人： DZENGELESKI JOSEPH P , EVANS MORGAN D , SCHEUER JAY THOMAS , SHETTY ASHWIN , SWENSON KENNETH
IPC分类号： H01J37/244 , G01R19/00 , H01J37/317
CPC分类号： G01R33/07 , B82Y25/00 , G01R19/0061 , G01R33/093 , H01J37/244 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24535 , H01J2237/24564 , H01J2237/304 , H01J2237/31703
摘要： This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.
摘要翻译：本公开提供了用于离子注入机的法拉第杯的磁监测方法。在本公开中，存在位于真空室内的真空室和法拉第杯。法拉第杯配置成在离子束进入真空室的路径内移动。位于真空室周围的磁性监测器被配置为将与法拉第杯相关的磁场与杂散磁场区分开。

13. 发明申请

WO02052608A3 CHARGING CONTROL AND DOSIMETRY SYSTEM FOR GAS CLUSTER ION BEAM 审中-公开
标题翻译：用于气体聚束离子束的充气控制和计量系统
公开(公告)号：WO02052608A3
公开(公告)日：2003-01-09
申请号：PCT/US0150343
申请日：2001-12-26
申请人： EPION CORP
发明人： MACK MICHAEL E , LIBBY BRUCE K
IPC分类号： H01J37/04 , H01J37/02 , H01J37/244 , H01J37/304 , H01J37/317 , C23C14/00
CPC分类号： H01J37/304 , H01J37/026 , H01J37/317 , H01J2237/0041 , H01J2237/0812 , H01J2237/304
摘要： A method and apparatus for gas cluster ion beam (GCIB) (128) processing uses X-Y scanning of the workpiece (152) relative to the GCIB (128). A neutralizer (310) reduces surface charging of the workpiece (152) by the GCIB. A single Faraday cup sensor (306) is used to measure the GCIB current for dosimetry and scanning control and also to measure and control the degree of surface charging that may be induced in the workpiece (152) during processing.
摘要翻译：用于气体簇离子束（GCIB）（128）处理的方法和装置使用相对于GCIB（128）的工件（152）的X-Y扫描。中和器（310）通过GCIB减少了工件（152）的表面充电。单个法拉第杯传感器（306）用于测量用于剂量测量和扫描控制的GCIB电流，并且还用于测量和控制在加工期间可能在工件（152）中感应的表面充电程度。

14. 发明申请

WO02052608A2 CHARGING CONTROL AND DOSIMETRY SYSTEM FOR GAS CLUSTER ION BEAM 审中-公开
标题翻译：用于气体聚束离子束的充气控制和计量系统
公开(公告)号：WO02052608A2
公开(公告)日：2002-07-04
申请号：PCT/US2001/050343
申请日：2001-12-26
IPC分类号： H01J37/04 , H01J37/02 , H01J37/244 , H01J37/304 , H01J37/317 , H01J37/00
CPC分类号： H01J37/304 , H01J37/026 , H01J37/317 , H01J2237/0041 , H01J2237/0812 , H01J2237/304
摘要： A method and apparatus for gas cluster ion beam (GCIB) (128) processing uses X-Y scanning of the workpiece (152) relative to the GCIB (128). A neutralizer (310) reduces surface charging of the workpiece (152) by the GCIB. A single Faraday cup sensor (306) is used to measure the GCIB current for dosimetry and scanning control and also to measure and control the degree of surface charging that may be induced in the workpiece (152) during processing.
摘要翻译：用于气体簇离子束（GCIB）（128）处理的方法和装置使用相对于GCIB（128）的工件（152）的X-Y扫描。中和器（310）通过GCIB减少了工件（152）的表面充电。单个法拉第杯传感器（306）用于测量用于剂量测量和扫描控制的GCIB电流，并且还用于测量和控制在加工期间可能在工件（152）中感应的表面充电程度。

15. 发明申请

WO2016138086A1 BIPOLAR WAFER CHARGE MONITOR SYSTEM AND ION IMPLANTATION SYSTEM COMPRISING SAME 审中-公开
标题翻译：双极波浪充电监测系统和包含相同的离子植入系统
公开(公告)号：WO2016138086A1
公开(公告)日：2016-09-01
申请号：PCT/US2016/019281
申请日：2016-02-24
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： FARLEY, Marvin , SAKASE, Takao , FOLEY, Joseph
IPC分类号： H01J37/304 , H01J37/317 , H01J37/32
CPC分类号： H01J37/304 , H01J37/3171 , H01J37/32412 , H01J2237/0041 , H01J2237/0203 , H01J2237/24507 , H01J2237/304 , H01J2237/31701 , H01L22/14
摘要： Charge monitor apparatus and methods are provided for determining a cumulative charge experienced by a workpiece during ion implantation. In one aspect, a charge monitor having a Langmuir probe 126 is provided, wherein a positive and negative charge rectifier 136,138 are operably coupled to the probe and configured to pass only a positive and negative charges therethrough, respectively; a positive current integrator 140 is operably coupled to the positive charge rectifier 136, wherein the positive current integrator is biased via a positive threshold voltage 142, and wherein the positive current integrator is configured to output a positive dosage 144 based, at least in part, on the positive threshold voyage; a negative current integrator 150 is operably coupled to the negative charge rectifier 138, wherein the negative current integrator is biased via a negative threshold voltage 152, and wherein the negative current integrator is configured to output a negative dosage 154 based, at least in part, on the negative threshold voltage; a positive charge counter 146 and a negative charge counter 156 are configured to respectively receive the output from the positive current integrator and negative current integrator in order to provide a respective cumulative positive charge value 148 and cumulative negative charge value 158 associated with the respective positive charge and negative charge.
摘要翻译：提供充电监测装置和方法，用于确定在离子注入期间由工件经历的累积电荷。在一个方面，提供了具有朗缪尔探针126的电荷监测器，其中正和负电荷整流器136,138可操作地耦合到探针并且被配置为分别仅通过正和负电荷; 正电流积分器140可操作地耦合到正电荷整流器136，其中正电流积分器经由正阈值电压142被偏置，并且其中正电流积分器被配置为输出正剂量144，至少部分地，在积极的航程上; 负电流积分器150可操作地耦合到负电荷整流器138，其中负电流积分器经由负阈值电压152被偏置，并且其中负电流积分器被配置为输出负剂量154，至少部分地，对负阈值电压; 正电荷计数器146和负电荷计数器156被配置为分别接收来自正电流积分器和负电流积分器的输出，以便提供与相应的正电荷相关联的相应的累积正电荷值148和累积负电荷值158 和负电荷。

16. 发明申请

WO2013097491A1 一种离子注入机自动建立束线与靶室高真空的方法审中-公开
公开(公告)号：WO2013097491A1
公开(公告)日：2013-07-04
申请号：PCT/CN2012/081492
申请日：2012-09-17
申请人：北京中科信电子装备有限公司
发明人：杨亚兵
IPC分类号： H01J37/317 , H01J37/304
CPC分类号： H01J37/18 , H01J37/3171 , H01J2237/304
摘要：一种离子注入机自动建立束线与靶室高真空的方法，包括：检测通信是否正常（1），检测束线与靶室是否是高真空状态（2），束线与靶室高真空未建立（3），检测水电气是否正常（4），关束线与靶室的所有阀门（5），开干泵RP2和差分抽气泵RP1（6），冷泵制冷、等待完成（7），检测冷泵是否制冷完成（8），开粗抽阀V8（9），关粗抽阀V8、开阀门V61s、分子泵TP3、WP3和源干泵RP3（10），检测源分子泵TP1是否开启（11），关阀门V46、开阀门V53（12），关阀门V46、开阀门V53（13），关阀门V53、开阀门V46（14），低规G15和G18值都小于1（15），开阀门V46和V53（16），开分子泵TP2（17），开冷泵隔离阀、高规除气（18），除气完成、开高规（19），束线与靶室高真空建立成功（20），状态错误（21），提示错误进入手动模式（22），束线与靶室高真空建立失败（23）。

17. 发明申请

WO2009155272A4 CROSS-SECTION SYSTEMS AND METHODS 审中-公开
标题翻译：交叉系统和方法
公开(公告)号：WO2009155272A4
公开(公告)日：2010-05-14
申请号：PCT/US2009047474
申请日：2009-06-16
申请人： CARL ZEISS SMT INC , SCIPIONI LAWRENCE , KNIPPELMEYER RAINER , RIEDESEL CHRISTOPH , MORGAN JOHN , MANTZ ULRICH , WAGEMANN ULRICH
发明人： SCIPIONI LAWRENCE , KNIPPELMEYER RAINER , RIEDESEL CHRISTOPH , MORGAN JOHN , MANTZ ULRICH , WAGEMANN ULRICH
IPC分类号： H01J37/30
CPC分类号： G01N1/286 , H01J2237/0807 , H01J2237/304 , H01J2237/31745 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A first instrument (230) is used to image a first semiconductor article having a trench (110) of defined cross-section, while a second instrument (220) is used to simultaneously prepare a second semiconductor article with a trench of defined cross-section. Furthermore, a method is disclosed to prepare a trench (110) of defined cross-section in a semiconductor article by rough milling and subsequent fine milling.
摘要翻译：第一仪器（230）用于对具有限定横截面的沟槽（110）的第一半导体产品成像，而第二器械（220）用于同时制备具有限定横截面的沟槽的第二半导体产品。此外，公开了一种通过粗铣和随后的精细铣削在半导体制品中制备具有限定横截面的沟槽（110）的方法。

18. 发明申请

WO2009155272A2 CROSS-SECTION SYSTEMS AND METHODS 审中-公开
标题翻译：交叉系统和方法
公开(公告)号：WO2009155272A2
公开(公告)日：2009-12-23
申请号：PCT/US2009/047474
申请日：2009-06-16
申请人： CARL ZEISS SMT. INC. , SCIPIONI, Lawrence , KNIPPELMEYER, Rainer , RIEDESEL, Christoph , MORGAN, John , MANTZ, Ulrich , WAGEMANN, Ulrich
发明人： SCIPIONI, Lawrence , KNIPPELMEYER, Rainer , RIEDESEL, Christoph , MORGAN, John , MANTZ, Ulrich , WAGEMANN, Ulrich
IPC分类号： H01J37/30
CPC分类号： G01N1/286 , H01J2237/0807 , H01J2237/304 , H01J2237/31745 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Cross-section systems and methods are disclosed. Methods can include imaging a cross-section of a first sample, and simultaneously preparing a cross-section of a second sample so that the cross-section of the second sample can be imaged. The first and second samples can be, for example, first and second semiconductor articles, respectively.
摘要翻译：公开了截面系统和方法。方法可以包括对第一样品的横截面进行成像，并且同时制备第二样品的横截面，使得可以对第二样品的横截面进行成像。第一和第二样品可以分别为例如第一和第二半导体制品。

19. 发明申请

WO2007035389A2 VACUUM REACTION CHAMBER WITH X-LAMP HEATER 审中-公开
标题翻译：真空反应室与X灯加热器
公开(公告)号：WO2007035389A2
公开(公告)日：2007-03-29
申请号：PCT/US2006/035753
申请日：2006-09-12
申请人： APPLIED MATERIALS, INC. , AL-BAYATI, Amir , D'CRUZ, Lester, A. , DEMOS, Alexandros, T. , DUBOIS, Dale, R. , ELSHEREF, Khaled, A. , IWASAKI, Naoyuki , M'SAAD, Hichem , ROCHA-ALVAREZ, Juan Carlos , SHAH, Ashish , SHIMIZU, Takashi
发明人： AL-BAYATI, Amir , D'CRUZ, Lester, A. , DEMOS, Alexandros, T. , DUBOIS, Dale, R. , ELSHEREF, Khaled, A. , IWASAKI, Naoyuki , M'SAAD, Hichem , ROCHA-ALVAREZ, Juan Carlos , SHAH, Ashish , SHIMIZU, Takashi
IPC分类号： G21G5/00
CPC分类号： H01J37/317 , B23K15/00 , C23F4/00 , H01J37/026 , H01J37/20 , H01J2237/004 , H01J2237/0044 , H01J2237/2001 , H01J2237/304 , H01J2237/3156 , H01J2237/316 , H01J2237/3165 , H01L21/67115
摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
摘要翻译：提供了用于基板的电子束处理的方法和装置。提供了一种电子束装置，其包括真空室，至少一个与真空室连通的热电偶组件，与真空室连通的加热装置及其组合。在一个实施例中，真空室包括电子源，其中电子源包括连接到高电压源的阴极，连接到低电压源的阳极和衬底支撑件。在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

20. 发明申请

WO02043104A2 HYBRID SCANNING SYSTEM AND METHODS FOR ION IMPLANTATION 审中-公开
标题翻译：混合扫描系统和离子植入方法
公开(公告)号：WO02043104A2
公开(公告)日：2002-05-30
申请号：PCT/US2001/044017
申请日：2001-11-21
IPC分类号： C23C14/48 , H01J37/04 , H01J37/317 , H01L21/265 , H01J37/304
CPC分类号： H01J37/3171 , H01J2237/20207 , H01J2237/20228 , H01J2237/304
摘要： An ion implantation system contains, in the ion implantation chamber, a workpiece holder that scans vertically while tilting a wafer at an angle of rotation that is rotated out of a perpendicular orientation with respect to the axis of projection in an ion beam. The implant angle into an implant surface on wafer that is retained by the workpiece holder is adjusted by selective rotation of the workpiece holder about its path of motion. A Faraday cup scans the ion beam along the intended location of the implant surface to form a setup measurement plane. The ion beam quality is adjusted to enhance beam uniformity along the setup plane according to these tilt-angle measurements. A charge neutralizing device, such as a flood gun, is moved in operational alignment with the workpiece.
摘要翻译：离子注入系统在离子注入室中包含垂直扫描的工件保持器，同时以相对于离子束中的突出轴线的垂直取向旋转的旋转角度倾斜晶片。通过工件保持器围绕其运动路径的选择性旋转来调节进入工件保持器所保持的晶片上植入物表面的植入角度。法拉第杯沿着植入物表面的预期位置扫描离子束以形成设置测量平面。根据这些倾斜角测量，调整离子束质量以提高沿着设置平面的光束均匀性。电荷中和装置，例如喷枪，与工件运动对准地移动。

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