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11. 发明申请

WO2006129126A2 LAYER-SELECTIVE LASER ABLATION PATTERNING 审中-公开
标题翻译：层选择性激光吸收图案
公开(公告)号：WO2006129126A2
公开(公告)日：2006-12-07
申请号：PCT/GB2006/050133
申请日：2006-05-30
申请人： PLASTIC LOGIC LIMITED , HAYTON, Carl , CAIN, Paul , BROWN, Thomas, Meredith
发明人： HAYTON, Carl , CAIN, Paul , BROWN, Thomas, Meredith
IPC分类号： H01L51/05
CPC分类号： H01L51/102 , H01L51/0017 , H01L51/0021 , H01L51/055
摘要： The present invention relates to methods of fabricating electronic devices such as thin film transistor (TFT) structures using laser ablation for selective patterning. A method of fabricating an organic electronic device, said organic electronic device having a structure including an upper conductive layer and an underlying layer immediately beneath said upper conducting layer and having at least one solution processable semiconducting layer, said upper conducting layer preferably having a thickness of between 10 nm and 200 nm, the method comprising patterning said upper conductive layer of said structure by: laser ablating said upper conductive layer using a pulsed laser to remove regions of upper conductive layer from said underlying layer for said patterning; and wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer to expose said underlying layer beneath.
摘要翻译：本发明涉及使用激光烧蚀来选择性图案化的诸如薄膜晶体管（TFT）结构的电子器件的制造方法。一种制造有机电子器件的方法，所述有机电子器件具有包括在上导电层正下方的上导电层和下层的结构，并且具有至少一个溶液可加工半导体层，所述上导电层优选具有在10nm和200nm之间，所述方法包括：通过以下步骤对所述结构的所述上导电层进行图案化：使用脉冲激光激光烧蚀所述上导电层，以从所述下层移除用于所述图案化的上导电层的区域; 并且其中所述激光烧蚀使用所述激光器的单个脉冲基本上完全去除所述上导电层的所述区域，以暴露下面的下层。

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