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    • 11. 发明申请
    • QUICK-CHANGE TOOL HOLDER WITH ADJUSTMENT MECHANISM
    • 具有调整机构的快速更换工具夹具
    • WO1994007637A1
    • 1994-04-14
    • PCT/US1993007871
    • 1993-08-18
    • KENNAMETAL INC.
    • KENNAMETAL INC.ERICKSON, Robert, A.OSHNOCK, James, A.
    • B23C05/26
    • B23B29/046B23B31/1071B23B2260/004Y10T82/2589Y10T407/2246
    • A quick-change tool holder (10) includes a tool support member (12) which is adapted to be mounted on a lathe turret or mounting block of a machine, a cutting head (14) formed with a seat (36) for receiving a cutting tool (38), and a clamping mechanism (16) for clamping the cutting head (14) to the support member (12). The tool support member (12) includes an axial bore (28) which receives a tubular shank (32) of the cutting unit (14). The clamping mechanism (16) is disposed within the axial bore (28) and includes a pair of radially expandable locking elements (94) to engage the tubular shank (32) of the cutting unit (14). The clamping mechanism (16) includes a key (82) which engages with a corresponding keyway (48) on the tubular shank (32) for angularly locating the cutting unit (14). Means are provided for rotating the clamping means (16) about a longitudinal axis of the support member (12) to change the angular location of the cutting unit (14).
    • 快速更换工具架(10)包括适于安装在机床的车床转台或安装块上的工具支撑构件(12),形成有座(36)的切割头(14),用于接收 切割工具(38)和用于将切割头(14)夹持到支撑构件(12)的夹紧机构(16)。 工具支撑构件(12)包括容纳切割单元(14)的管状柄(32)的轴向孔(28)。 夹紧机构(16)设置在轴向孔(28)内并且包括一对可径向扩张的锁定元件(94),以与切割单元(14)的管状柄(32)接合。 夹紧机构(16)包括与管状柄(32)上的对应的键槽(48)接合的用于角度地定位切割单元(14)的键(82)。 提供了用于围绕支撑构件(12)的纵向轴线旋转夹紧装置(16)以改变切割单元(14)的角位置的装置。
    • 19. 发明申请
    • CVD GROWN TRANSITION METAL CARBIDE AND NITRIDE WHISKERS
    • CVD过渡金属碳化物和氮化物
    • WO1990014451A1
    • 1990-11-29
    • PCT/US1990001755
    • 1990-03-29
    • KENNAMETAL INC.
    • KENNAMETAL INC.BAUER, Charles, ErikBRYANT, William, A.
    • C30B29/62
    • C30B25/005C30B29/36C30B29/38
    • A chemical vapor deposition process for producing single crystal whiskers of metal carbides, nitrides, or carbonitrides is provided. The process includes flushing a reactor having a suitable growth substrate surface heated to 1120 to 1225 degrees C and flowing reactant gases past the growth substrate to form whiskers. The reactant gases comprise a metal halide and one or more of nitrogen and methane. The atomic ratio of carbon and nitrogen to metal is about 0.7:1 and 20:1, respectively. The volume ratio of hydrocarbon and nitrogen to hydrogen is about 1:37 and 1:1.6, respectively. The preferred growth substrate materials are nickel powder dispersed onto alumina oxide plates or nickel electrolytically deposited onto TiC or TiN coated aluminum oxide plates. The whiskers may be subjected to a post-growth treatment to remove the residual nickel catalyst used to grow the whiskers. The process is a two-step procedure. In the first step, the whiskers are treated at between 350 to 400 degrees C at one atmosphere pressure with 2.8 slm of HCl in 11.4 slm of argon gas for approximately one hour to convert the nickel residual catalyst to NiCl2. In the second step, the whiskers are then heated to 1000 degrees C and treated with 11.4 slm of argon for one hour to cause the NiCl2 to sublime. This results in the reduction of the residual nickel content of the whiskers from 1-2 wt % to 0.2 wt %, an order of magnitude reduction, without adversely affecting the physical properties of the whiskers.
    • 提供了用于生产金属碳化物,氮化物或碳氮化物的单晶晶须的化学气相沉积方法。 该方法包括冲洗具有加热至1120至1225℃的合适生长衬底表面的反应器并使反应气体流过生长衬底以形成晶须。 反应物气体包括金属卤化物和氮气和甲烷中的一种或多种。 碳和氮与金属的原子比分别为约0.7:1和20:1。 烃和氮与氢的体积比分别为约1:37和1:1.6。 优选的生长衬底材料是分散在氧化铝板上的镍粉末或电解沉积到TiC或TiN涂覆的氧化铝板上的镍。 可以对晶须进行后期生长处理以除去用于生长晶须的残余镍催化剂。 这个过程是一个两步骤的过程。 在第一步骤中,将晶须在一个大气压下在350-400℃和在11.4slm氩气中的2.8slm的HCl处理约1小时,以将镍残留催化剂转化成NiCl 2。 在第二步中,将晶须加热至1000℃,用11.4slm氩气处理1小时,使NiCl 2升华。 这导致将晶须的残余镍含量从1-2重量%降低到0.2重量%,降低了数量级,而不会不利地影响晶须的物理性能。