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11. 发明申请

WO2005031819A1 A DEVICE AND A METHOD FOR FORMING A CAPACITOR DEVICE 审中-公开
标题翻译：一种用于形成电容器件的装置和方法
公开(公告)号：WO2005031819A1
公开(公告)日：2005-04-07
申请号：PCT/SG2004/000283
申请日：2004-09-03
申请人： INFINEON TECHNOLOGIES AG , ZHUANG, Haoren , NAGEL, Nicolas , LIAN, Jingyu , BRUCHHAUS, Rainer
发明人： ZHUANG, Haoren , NAGEL, Nicolas , LIAN, Jingyu , BRUCHHAUS, Rainer
IPC分类号： H01L21/02
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/92
摘要： A device and method for forming a capacitor device comprises forming a substrate, forming a first interlayer dielectric layer on the substrate and forming two or more contact plugs through the substrate. A conducting layer is formed on the first interlayer dielectric layer and an electrode is formed on alternate ones of the contact plugs by etching the conducting layer. The etched electrodes are then coated with a ferroelectric layer. The ferroelectric layer is etched from the surfaces separating the contact plugs and additional electrodes are created by filling the spaces between the electrodes on alternate ones of the contact plugs with a conductive material to establish electrical contact between the plugs and the electrodes.
摘要翻译：用于形成电容器器件的器件和方法包括形成衬底，在衬底上形成第一层间电介质层，并通过衬底形成两个或更多个接触插塞。在第一层间电介质层上形成导电层，通过蚀刻导电层，在交替的接触插塞上形成电极。然后用铁电层涂覆蚀刻的电极。从分离接触塞的表面蚀刻铁电层，并且通过用导电材料填充交替的接触插塞上的电极之间的空间来产生附加电极，以建立插塞和电极之间的电接触。

12. 发明申请

WO2004093168A1 A PROCESS FOR FABRICATION OF FERROELECTRIC DEVICES WITH REDUCED HYDROGEN ION DAMAGE 审中-公开
标题翻译：具有降低氢损伤的电磁装置的制造方法
公开(公告)号：WO2004093168A1
公开(公告)日：2004-10-28
申请号：PCT/SG2004/000065
申请日：2004-03-22
申请人： INFINEON TECHNOLOGIES AG , KABUSHIKI KAISHA TOSHIBA , HORNIK, Karl , ZHUANG, Haoren , MOON, Bum-Ki , HILLIGER, Andreas , NATORI, Katsuaki
发明人： HORNIK, Karl , ZHUANG, Haoren , MOON, Bum-Ki , HILLIGER, Andreas , NATORI, Katsuaki
IPC分类号： H01L21/02
CPC分类号： H01L28/57 , H01L21/02178 , H01L21/022 , H01L21/02266 , H01L21/0228 , H01L21/28568 , H01L21/3141 , H01L21/31616 , H01L28/65 , H01L28/75
摘要： A ferrocapacitor device comprising a ferroelectric capacitor structure which includes a bottom electrode (5), a ferroelectric layer (7), and a top electrode (9), formed over a substructure (1). A first Al 2 0 3 cover layer (15) is deposited over the structure by a physical vapour deposition process (such as sputtering), and a second Al 2 0 3 cover layer (17) is deposited over the first Al 2 0 3 cover layer (15) by atomic layer deposition. The first Al 2 0 3 cover layer (15) protects the capacitor structure during the formation of the second Al 2 0 3 cover layer (17), and the second Al 2 0 3 cover layer (17) protects the capacitor structure during back end processes performed on the FeRAM device.
摘要翻译：一种铁电体器件，包括形成在子结构（1）上的包括底部电极（5），铁电体层（7）和顶部电极（9）的铁电电容器结构。通过物理气相沉积工艺（例如溅射）在结构上沉积第一Al 2 O 3覆盖层（15），并且通过原子层沉积在第一Al 2 O 3覆盖层（15）上沉积第二Al 2 O 3覆盖层（17）。第一Al 2 O 3覆盖层（15）在形成第二Al 2 O 3覆盖层（17）期间保护电容器结构，并且第二Al 2 O 3覆盖层（17）在对FeRAM器件执行的后端处理期间保护电容器结构。

13. 发明申请

WO2004051711A2 FERROELECTRIC CAPACITOR AND PROCESS FOR ITS MANUFACTURE 审中-公开
标题翻译：电力电容器及其制造工艺
公开(公告)号：WO2004051711A2
公开(公告)日：2004-06-17
申请号：PCT/SG2003/000271
申请日：2003-11-17
申请人： INFINEON TECHNOLOGIES AG , EGGER, Ulrich , ZHUANG, Haoren , HORNIK, Karl
发明人： EGGER, Ulrich , ZHUANG, Haoren , HORNIK, Karl
IPC分类号： H01L21/00
CPC分类号： H01L28/55 , H01L21/02178 , H01L21/02266 , H01L21/31116 , H01L21/3162
摘要： A method of forming a capacitor, comprises the steps of (a) forming a matrix of ferroelectric capacitor elements on a substrate, (b) forming a CAP layer over the ferroelectric capacitor elements, and (c) etching the CAP layer to a more uniform thickness. Also, a capacitor comprises a substrate layer, a matrix of ferroelectric capacitor elements including a first electrode layer substantially fixed relative to the substrate, a second electrode layer, and a ferroelectric layer sandwiched between the first and second electrode layers; a shoulder layer extending from the substrate to the matrix; and a CAP layer etched to have substantially constant thickness covering sides of the matrix extending beyond the substrate.
摘要翻译：一种形成电容器的方法包括以下步骤：（a）在衬底上形成铁电电容器元件的矩阵，（b）在铁电电容器元件上形成CAP层，以及（c）将CAP层蚀刻成更均匀厚度。此外，电容器包括基板层，包括相对于基板基本上固定的第一电极层的铁电电容器元件的矩阵，第二电极层和夹在第一和第二电极层之间的铁电层; 从基底延伸到基体的肩层; 并且CAP层被蚀刻以具有基本上恒定的厚度，覆盖延伸超过衬底的矩阵的侧面。

14. 发明申请

WO2005010958A1 FABRICATION OF A FERAM CAPACITOR USING A NOBLE METAL HARDMASK 审中-公开
标题翻译：使用非金属硬质合金制造FERAM电容器
公开(公告)号：WO2005010958A1
公开(公告)日：2005-02-03
申请号：PCT/SG2004/000199
申请日：2004-07-06
申请人： INFINEON TECHNOLOGIES AG , EGGER, Ulrich , ZHUANG, Haoren , BRUCHHAUS, Rainer
发明人： EGGER, Ulrich , ZHUANG, Haoren , BRUCHHAUS, Rainer
IPC分类号： H01L21/02
CPC分类号： H01L28/55 , H01L21/31122 , H01L21/31144 , H01L21/32136 , H01L21/32139 , H01L28/65
摘要： A ferroelectric capacitor (202) is fabricated using a noble metal hardmask (203). A hardmask is deposited on a top electrode (203) of a capacitor stack comprising a ferroelectric layer (207) sandwiched between the top electrode and a bottom electrode (205). The top electrode is patterned (703) according to the pattern of the hardmask by etching at a first temperature. The top electrode (203) serves as the noble metal hardmask (203) and the ferroelectric layer is patterned (707) according to the pattern of the top electrode at a second temperature (705) lower than the first temperature, resulting in the top electrode having sidewalls beveled relative to a top surface of the top electrode etching. The bottom electrode is etched at a third temperature to form the capacitor.
摘要翻译：使用贵金属硬掩模（203）制造铁电电容器（202）。硬掩模沉积在电容器堆叠的顶部电极（203）上，电容器堆叠包括夹在顶部电极和底部电极（205）之间的铁电层（207）。根据硬掩模的图案，通过在第一温度下进行蚀刻，将顶部电极图案化（703）。顶部电极（203）用作贵金属硬掩模（203），并且在低于第一温度的第二温度（705）下，根据顶部电极的图案将铁电层图案化（707），导致顶部电极具有相对于顶部电极蚀刻的顶表面倾斜的侧壁。在第三温度下蚀刻底部电极以形成电容器。

15. 发明申请

WO2005031815A1 A DEVICE AND A METHOD FOR FORMING A FERROELECTRIC CAPACITOR DEVICE 审中-公开
标题翻译：一种用于形成电介质电容器件的器件和方法
公开(公告)号：WO2005031815A1
公开(公告)日：2005-04-07
申请号：PCT/SG2004/000267
申请日：2004-08-31
申请人： INFINEON TECHNOLOGIES AG , ZHUANG, Haoren , EGGER, Ulrich
发明人： ZHUANG, Haoren , EGGER, Ulrich
IPC分类号： H01L21/02
CPC分类号： H01L28/60 , H01L21/0337 , H01L21/31144 , H01L21/32139 , H01L28/55
摘要： A ferroelectric capacitor device, such as an FeRAM device is formed by forming a substrate extending in a first plane and comprising a number of layers of material, forming a hard mask layer on the substrate and forming a first layer of a first material on the hard mask layer. The hard mask shape is then defined by etching the hard mask layer. A second layer of the first material is deposited on the etched hard mask layer. The deposited second layer has one or more side surfaces extending substantially perpendicular to the plane of the substrate. The second layer and the number of layers forming the substrate are then etched to shape the ferroelectric capacitor device.
摘要翻译：诸如FeRAM器件的铁电电容器器件通过形成在第一平面中延伸并且包括多个材料层的衬底形成，在衬底上形成硬掩模层，并在硬质层上形成第一材料的第一层掩模层。然后通过蚀刻硬掩模层来限定硬掩模形状。第一材料的第二层沉积在蚀刻的硬掩模层上。沉积的第二层具有基本上垂直于衬底的平面延伸的一个或多个侧表面。然后蚀刻第二层和形成衬底的层数，以形成铁电电容器器件。

16. 发明申请

WO2005024919A1 A DEVICE AND METHOD FOR INHIBITING HYDROGEN DAMAGE IN FERROELECTRIC CAPACITOR DEVICES 审中-公开
标题翻译：用于抑制氢电容器装置中的氢损伤的装置和方法
公开(公告)号：WO2005024919A1
公开(公告)日：2005-03-17
申请号：PCT/SG2004/000251
申请日：2004-08-18
申请人： INFINEON TECHNOLOGIES AG , MOON, Bum-Ki , HORNIK, Karl , ZHUANG, Haoren , EGGER, Ulrich , LIAN, Jenny , HILLIGER, Andreas
发明人： MOON, Bum-Ki , HORNIK, Karl , ZHUANG, Haoren , EGGER, Ulrich , LIAN, Jenny , HILLIGER, Andreas
IPC分类号： H01L21/02
CPC分类号： H01L28/57 , H01L27/0805 , H01L27/11507
摘要： A ferroelectric capacitor device comprises a substrate, a contact plug passing through the substrate, a first electrode formed on the substrate, the first electrode being electrically connected to said plug, a ferroelectric layer formed on the first electrode, a second electrode formed on the ferroelectric layer, one or more first encapsulation layers on the second electrode, the encapsulation layers extending over the device, and one or more hydrogen storage material layers on the encapsulation layers. One or more second encapsulation layers may be formed on the one or more hydrogen storage material layers.
摘要翻译：铁电电容器装置包括基板，穿过基板的接触插塞，形成在基板上的第一电极，第一电极电连接到所述插头，形成在第一电极上的铁电层，形成在铁电体上的第二电极层，在第二电极上的一个或多个第一封装层，在器件上延伸的封装层以及封装层上的一个或多个储氢材料层。一个或多个第二封装层可以形成在一个或多个储氢材料层上。

17. 发明申请

WO2004077541A3 A METHOD OF ETCHING FERROELECTRIC DEVICES 审中-公开
公开(公告)号：WO2004077541A3
公开(公告)日：2004-09-10
申请号：PCT/SG2004/000034
申请日：2004-02-09
申请人： INFINEON TECHNOLOGIES AG , EGGER, Ulrich , ZHUANG, Haoren , BRUCHHAUS, Rainer
发明人： EGGER, Ulrich , ZHUANG, Haoren , BRUCHHAUS, Rainer
IPC分类号： H01L21/311
摘要： A method of etching a ferroelectric device (100) having a ferroelectric layer (112) between a top and a bottom electrode (114, 108) is disclosed herein. Hardmasks (116, 118) are deposited on the top electrode (114), two or more hardmasks being spaced apart by narrow first regions (115) and spaced apart from other hardmasks by wider second regions (117). The top electrode (114) and ferroelectric layer (112) are then etched to pattern the top electrode (114) thus forming capacitors (102, 104), and the bottom electrode (108) is etched by a process in which the second regions are etched more slowly than the second regions. Those capacitors having a first region between them have a common bottom electrode (108), but in the second regions the bottom electrode is severed. To pattern the bottom electrode (108), a fluorine-based chemistry followed thereafter by a CO-based chemistry are used in a two step etching process.

18. 发明申请

WO2004030069A2 METHOD OF PATTERNING CAPACITORS AND CAPACITORS MADE THEREBY 审中-公开
标题翻译：图案化电容器和由此制造的电容器的方法
公开(公告)号：WO2004030069A2
公开(公告)日：2004-04-08
申请号：PCT/SG2003/000220
申请日：2003-09-17
申请人： INFINEON TECHNOLOGIES AG
发明人： LIAN, Jenny , ZHUANG, Haoren , EGGER, Ulrich , HORNIK, Karl
IPC分类号： H01L21/311
CPC分类号： H01L28/55 , H01L21/31122
摘要： A method of forming a ferroelectric capacitor, in particular for use in a FeRAM or high-k DRAM application, and a capacitor made by the method. The method comprises forming a first layer which is patterned, for example by a reactive ion etching method. A ferroelectric material is then formed over the patterned first layer. The morphology of the ferroelectric material will be dependent upon the patterning of the first layer. The ferroelectric layer is then patterned, for example using a wet etching or a reactive ion etching method. The etching will depend upon the morphology of the ferroelectric layer. After etching the ferroelectric layer, a conductive layer is provided over the ferroelectric layer to form a first electrode of the capacitor. If the first layer is a conductive layer, this forms the second electrode. If the first layer is a non-conductive layer,. the conductive layer is patterned to form both the first and second electrodes.
摘要翻译：一种形成铁电电容器的方法，特别是用于FeRAM或高k DRAM应用中的方法以及由该方法制造的电容器。该方法包括形成例如通过反应离子蚀刻方法图案化的第一层。然后在图案化的第一层上形成铁电材料。铁电材料的形态将取决于第一层的图案化。然后，例如使用湿法蚀刻或反应离子蚀刻方法将铁电层图案化。蚀刻将取决于铁电层的形态。在腐蚀铁电层之后，在铁电层上提供导电层以形成电容器的第一电极。如果第一层是导电层，则这形成第二电极。如果第一层是非导电层，图案化导电层以形成第一和第二电极。

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