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11. 发明申请

WO1991006124A1 SOLID-STATE IMAGE SENSOR 审中-公开
标题翻译：固态图像传感器
公开(公告)号：WO1991006124A1
公开(公告)日：1991-05-02
申请号：PCT/US1990005496
申请日：1990-10-01
申请人： EASTMAN KODAK COMPANY
发明人： EASTMAN KODAK COMPANY , STEVENS, Eric, Gordon
IPC分类号： H01L27/148
CPC分类号： H01L27/14887 , H01L27/14831
摘要： A solid-state image sensor comprises a plurality of photodetectors (16) in a substrate (12) of a semiconductor material at a major surface (14) of the substrate and arranged in an array of rows and columns. A separate shift register (18), such as a CCD shift register, is in the substrate (12) and extends along each column of the photodetectors (16). Transfer gates (42) are provided to selectively transfer charge carriers from the photodetectors (16) to their adjacent shift register (18). A separate drain region (32) is provided in the substrate (12) at the major surface (14) adjacent each photodetector (16) and between adjacent photodetectors (16) in each column. A virtual barrier region (34) is provided across an edge of each photodetector (16) between the photodetector (16) and its adjacent drain region (32). A gate (24) is provided across the space between adjacent photodetectors (16) in each column for selectively allowing charge carriers in each photodetector (16) to be transferred to the drain (20) of the adjacent photodetector (16) to allow the photodetector (16) to be reset and thereby control the exposure time of the photodetectors (16). The drain region (32) serves as an anti-blooming drain for its adjacent photodetector (16) as well as a drain for resetting the photodetectors (16).

12. 发明申请

WO1992014265A2 CHARGE-COUPLED DEVICE (CCD) IMAGE SENSOR 审中-公开
标题翻译：电荷耦合器件（CCD）图像传感器
公开(公告)号：WO1992014265A2
公开(公告)日：1992-08-20
申请号：PCT/US1992000672
申请日：1992-02-03
申请人： EASTMAN KODAK COMPANY
发明人： EASTMAN KODAK COMPANY , STEVENS, Eric, Gordon
IPC分类号： H01L27/148
CPC分类号： H04N5/343 , H01L27/14831 , H04N5/372
摘要： A charge-coupled device (CCD) image sensor, which can be operated either in the interlace mode or in the non-interlace mode, includes in a substrate of a semiconductor material a plurality of photodetectors, such as photodiodes, arranged in an array of rows and columns. A separate CCD shift register in the substrate extends along each column of the photodetectors. First and second sets of conductive gates extend transversely across the CCD shift registers with each first gate extending across a portion of the photodetectors in each row and each of the second gates extending across the remaining portion of the photodetectors in each row. A transfer region extends across the substrate from a portion of each of the photodetectors to an adjacent CCD shift register. The transfer regions of alternate photodetectors in each column extends under the first gates of the photodetectors and the transfer regions of the other photodetectors in each column extends under the second gates of the respective photodetectors. To operate the CCD image sensor in an interlace mode, during the transfer stage the two sets of gates are pulsed alternately with a shift register read-out after each set of gates is pulsed to read-out one-half of a frame at a time. To operate the CCD image sensor in the non-interlace mode, during the transfer stage all of the gates are pulsed simultaneously to read-out the entire frame in a single scan.

13. 发明申请

WO1992001312A1 ANTIBLOOMING STRUCTURE FOR SOLID-STATE IMAGE SENSOR 审中-公开
标题翻译：固态图像传感器的防结构
公开(公告)号：WO1992001312A1
公开(公告)日：1992-01-23
申请号：PCT/US1991004590
申请日：1991-06-27
申请人： EASTMAN KODAK COMPANY
发明人： EASTMAN KODAK COMPANY , STEVENS, Eric, Gordon , LEE, Teh-Hsuang , BURKEY, Bruce, Curtiss
IPC分类号： H01L27/148
CPC分类号： H01L27/14887 , H01L27/14806
摘要： A solid-state image sensor includes a substrate (12) of a semi-conductor material of one conductivity type having a surface. A plurality of spaced, parallel CCDs (18) are in the substrate (12) at the surface (14). Each CCD (18) includes a channel region (24) of the opposite conductivity type in the substrate and a plurality of conductive gates (28, 30; 128, 130) extending across and insulated from the channel region (24). The conductive gates extend laterally across the channel regions of all of the CCDs and divide the channel regions into a plurality of phases and pixels. A drain region (36; 136) of the opposite conductivity type is in the substrate (12) at the surface and extends along the channel region (24) of at least one of the CCDs (18). A separate overflow channel region (38; 138) of the opposite conductivity type is in the substrate at said surface and extends from each of the CCD channel region phases to the adjacent drain region. A separate overflow barrier region (40; 140) of the one conductivity type is in the substrate and extends across an overflow channel region (38; 138) between the CCD channel region (24) and the drain (36; 136) to control the flow of charge carriers from each phase of the CCD channel region to the drain. Each of the CCDs (18) may have a separate drain region (36) or two adjacent CCDs may share a common drain region (136). A CCD barrier region (32; 132) extends across the channel region in each phase. The CCD barrier region (32; 132) contains the same impurity concentration as the overflow-barrier region (40; 140) of its respective phase and may be connected to the overflow-barrier region.

14. 发明申请

WO1992010854A1 IMAGE DEVICE WITH PHOTODIODE HAVING REAL TIME READOUT PROPERTY 审中-公开
标题翻译：具有实时读出属性的光电影的图像设备
公开(公告)号：WO1992010854A1
公开(公告)日：1992-06-25
申请号：PCT/US1991009053
申请日：1991-12-06
申请人： EASTMAN KODAK COMPANY
发明人： EASTMAN KODAK COMPANY , GABOURY, Michael, Joseph , LEE, Teh-Hsuang , STEVENS, Eric, Gordon
IPC分类号： H01L27/148
CPC分类号： H01L27/14887
摘要： In a solid state image sensor, such as a CCD image sensor having lateral antiblooming protection, the level of which is controlled by an overflow gate voltage forming a barrier, the storage of electrons in the photodiode junction region of the sensor is eliminated by removing the barrier and allowing the charge to flow from the sensor's photodiode junctions into the overflow region. The charge flow is then detected as a function of the instantaneous light impinging on the photodiodes. The physical connections of the overflow gates are selected to form zones. Since the charge flow now represents the instantaneous light intensity, higher frequency components are detected than that limited by the sensor sampling rate. An amplifier is connected to sense the charge flow from each zone. With the range of light intensity being large the amplifier is provided with a logarithmic feed back element. This element provides compression of a signal representing the sensed charge flow.

15. 发明申请

WO1991008589A1 IMAGE SENSOR 审中-公开
标题翻译：图像传感器
公开(公告)号：WO1991008589A1
公开(公告)日：1991-06-13
申请号：PCT/US1990006818
申请日：1990-11-28
申请人： EASTMAN KODAK COMPANY
发明人： EASTMAN KODAK COMPANY , STEVENS, Eric, Gordon
IPC分类号： H01L27/148
CPC分类号： H01L27/14831 , H04N5/37213
摘要： An image sensor is disclosed which comprises an imaging region (12) and horizontal shift registers (20, 22) which receive charge carriers generated in the imaging region (12) and transfer them to an output circuit for processing. In order to facilitate the transfer of charge carriers out of the sensor and to provide an imaged sensor which has a simplified structure, dual horizontal transfer registers (20, 22) are used and transfer of charge carriers between the two registers is accomplished whithout a separate transfer gate electrode.
摘要翻译：公开了一种具有接收在所述成像区域（12）中产生的电荷载体的成像区域（12）和水平位移寄存器（20，22）的图像传感器，并将它们传送到一个电路输出进行治疗。为了方便的电荷载流子从所述传感器传送并创建具有简化结构的图像传感器中使用，而不进行双水平传输寄存器（20，22）和寄存器之间的电荷载体转移一个单独的传输栅电极。

16. 发明申请

WO1992022092A1 CCD ELECTRODE STRUCTURE FOR IMAGE SENSORS 审中-公开
标题翻译： CCD电极结构图像传感器
公开(公告)号：WO1992022092A1
公开(公告)日：1992-12-10
申请号：PCT/US1992004445
申请日：1992-06-04
申请人： EASTMAN KODAK COMPANY
发明人： EASTMAN KODAK COMPANY , LOSEE, David, Lawrence , STEVENS, Eric, Gordon
IPC分类号： H01L27/148
CPC分类号： H01L31/02164 , H01L27/148
摘要： An image sensor including CCD, a charge coupled device (CCD) or shift register. Each CCD structure is formed of a set of electrodes wherein at least one electrode of each set is formed of a continuous layer of opaque conducting material.
摘要翻译：包括CCD，电荷耦合器件（CCD）或移位寄存器的图像传感器。每个CCD结构由一组电极形成，其中每组的至少一个电极由连续的不透明导电材料层形成。

17. 发明申请

WO1991015079A1 IMAGE SENSOR 审中-公开
标题翻译：图像传感器
公开(公告)号：WO1991015079A1
公开(公告)日：1991-10-03
申请号：PCT/US1991001588
申请日：1991-03-14
申请人： EASTMAN KODAK COMPANY
发明人： EASTMAN KODAK COMPANY , STEVENS, Eric, Gordon
IPC分类号： H04N03/15
CPC分类号： H01L27/14831 , H04N5/372 , H04N5/37213
摘要： An image sensor is disclosed which comprises an imaging region (12) and horizontal shift registers (20, 22) which receive charge carriers generated in the imaging region (12) and transfer them to an output circuit for processing. In order to facilitate the transfer of charge carriers out of the sensor and to provide an image sensor which has a simplified structure, dual horizontal transfer registers (20, 22) are used and transfer of charge carriers between the two registers (20, 22) is accomplished without a separate transfer gate electrode. Transfer regions (70) are disposed between alternate storage regions (72) of the two registers (20, 22) such that charge carriers in one-half of the storage regions (72) in one register (20) can be transferred to storage regions in the other register (22). The two registers (20, 22) can then be clocked out in parallel to read out a single line.

18. 发明申请

WO1989009495A1 SOLID-STATE IMAGE SENSOR 审中-公开
标题翻译：固态图像传感器
公开(公告)号：WO1989009495A1
公开(公告)日：1989-10-05
申请号：PCT/US1989000969
申请日：1989-03-13
申请人： EASTMAN KODAK COMPANY
发明人： EASTMAN KODAK COMPANY , STEVENS, Eric, Gordon
IPC分类号： H01L27/14
CPC分类号： H01L27/14887 , H01L27/14831
摘要： A solid-state image sensor is disclosed which comprises a photodiode (64; 64') formed in a P-type substrate (62; 62'). A charge-coupled device (66; 66') is disposed adjacent the photodiode for receiving signal carriers from the photodiode (64; 64'). A lateral-overflow drain (75; 75') is disposed adjacent the photodiode for receiving excess carriers from the photodiode (64; 64'). In order to provide a simplified image sensor, a virtual gate (71; 71') is formed between the photodiode (64; 64') and the drain (75; 75') to effect the flow of the excess carriers from the photodiode (64; 64').

19. 发明申请

WO1992003850A2 IMAGE SENSOR HAVING TRANSFER GATE BETWEEN THE PHOTODIODE AND THE CCD GATE 审中-公开
标题翻译：图像传感器在光电二极管和CCD栅极之间具有传输栅极
公开(公告)号：WO1992003850A2
公开(公告)日：1992-03-05
申请号：PCT/US1991005671
申请日：1991-08-09
申请人： EASTMAN KODAK COMPANY
发明人： EASTMAN KODAK COMPANY , ERHARDT, Herbert, James , NELSON, Edward, Tichenor , STEVENS, Eric, Gordon
IPC分类号： H01L27/148
CPC分类号： H01L29/76833 , H01L27/14831
摘要： An image sensor formed on a P-type substrate (12; 112) includes a plurality of pinned diode photodiodes (18; 118), a CCD shift register (20; 120) and a separate buried transfer gate (22; 122) located between each of the photodiodes (18; 118) and the CCD shift register (20; 120). The photodetectors (18; 118) are arranged in at least one line. The CCD shift register (20; 120) extends along the line of photodetectors (18; 118). Each of the pinned diode photodetectors (18; 118) includes a first region (24; 124) of N-type conductivity in the substrate (12; 112) and a second region (26; 126) of P+ type conductivity in the first region (24; 124) and along the substrate surface. The CCD shift register (20; 120) includes a channel region (30; 130) of N-type conductivity in the substrate surface and two sets of conductive gates (34, 36; 134) along the channel region (30; 130) and insulated from the substrate surface (14; 114). Each transfer gate (22; 122) includes a transfer channel region (46; 146) of N-type conductivity in the substrate and extending along the substrate surface from the shift register channel region (30; 130) to the first region (24; 124) of its respective photodetector (18; 118). Each gate (34; 134) of one of the sets of shift register gates may have a portion (50; 150) which extends over the transfer gate channel region (46; 146).
摘要翻译：（12; 112）布置成P型的衬底上的图像传感器包括多个光电二极管PIN二极管（18; 118），一个CCD移位寄存器（20; 120）埋入和一个单独的传输门（22; 122），放置在每个光电二极管（18; 118）和CCD寄存器（20; 120）之间。光电检测器（18; 118）被布置在至少一条线中。 CCD移位寄存器（20; 120）沿着光电检测器（18; 118）的线延伸。每个PIN二极管光电探测器（18; 118）包括在衬底（12; 112）中的第一N型导电区域（24; 124）和第二P型导电区域（26; 126）在第一区域（24; 124）中并沿着衬底表面。 CCD移位寄存器（20,120）包括位于衬底表面中的具有-N型导电性的沟道区域（30; 130）以及沿着衬底表面延伸的两组导电栅极（34,36; 134）沟道区域（30; 130）并且与衬底表面（14; 114）隔离。每个传输门（22; 122）包括位于衬底中并且沿沟道区（30; 122）的衬底表面延伸的具有-N型导电性的沟道传输区（46; 146） 130）移位到其相应的光电检测器（18; 118）的第一区域（24; 124）。其中一组移位寄存器门的每个门（34; 134）可具有在传送门的通道区域（46; 146）上方延伸的部分（50; 150）。。

20. 发明申请

WO1991006123A1 SOLID-STATE IMAGER 审中-公开
标题翻译：固态成像器
公开(公告)号：WO1991006123A1
公开(公告)日：1991-05-02
申请号：PCT/US1990005495
申请日：1990-10-01
申请人： EASTMAN KODAK COMPANY
发明人： EASTMAN KODAK COMPANY , STEVENS, Eric, Gordon
IPC分类号： H01L27/148
CPC分类号： H01L27/14831
摘要： A solid-state imager comprising a substrate (12) of a semiconductor material of one conductivity type having a major surface (14). A plurality of photodetectors (16) are in the substrate (12) and are arranged in an array of rows and columns. A separate CCD shift register (18) is in the substrate (12) along each column of the photodetectors (16) and between adjacent columns of the photodetectors (16). Each shift register (18) includes gates (44) which can be operated to selectively transfer charge carriers from the photodetectors (16) into the shift register (18). A separate drain (24) is located adjacent each photodetector (16) and a shift register (18). An anti-blooming barrier (26) is provided between each drain (24) and its adjacent photodetector (16). An exposure control barrier (28) is provided between each drain (24) and the adjacent shift register (18). The shift registers (18) are adpated to be operated to selectively reset the photodetectors (16) by transferring charge carriers from the photodetectors (16) across the shift registers (18) to the drains (24).

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