专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

WO2010053557A3 BACK-ILLUMINATED CMOS IMAGE SENSORS 审中-公开
标题翻译：后置照明CMOS图像传感器
公开(公告)号：WO2010053557A3
公开(公告)日：2010-08-19
申请号：PCT/US2009005989
申请日：2009-11-05
申请人： EASTMAN KODAK CO , ANDERSON TODD JEFFERY , MCCARTEN JOHN P , SUMMA JOSEPH R , TIVARUS CRISTIAN ALEXANDRU , STEVENS ERIC GORDON
发明人： ANDERSON TODD JEFFERY , MCCARTEN JOHN P , SUMMA JOSEPH R , TIVARUS CRISTIAN ALEXANDRU , STEVENS ERIC GORDON
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14689
摘要： A back-illuminated image sensor (500) includes a sensor layer (606) disposed between an insulating layer (604) and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors (616) formed in the sensor layer and a well (800) that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer including a region formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface (704) between the sensor layer and the insulating layer.
摘要翻译：背照式图像传感器（500）包括设置在绝缘层（604）和电连接到传感器层的电路层之间的传感器层（606）。成像区域包括形成在传感器层中的多个光电检测器（616）和跨越成像区域的阱（800）。阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，包括形成在光电检测器和埋置阱之间的区域。一个或多个侧孔可以横向邻近于每个光电检测器形成。阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面（704）的传感器层侧上的分离系数。

12. 发明申请

WO2010068249A1 TRENCH ISOLATION REGIONS IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的分离区域
公开(公告)号：WO2010068249A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/006375
申请日：2009-12-03
申请人： EASTMAN KODAK COMPANY , STEVENS, Eric Gordon , DOAN, Hung Quoc
发明人： STEVENS, Eric Gordon , DOAN, Hung Quoc
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L21/76224 , H01L27/1463
摘要： Trenches are formed in a substrate or layer and a solid source doped with one or more dopants is deposited over the image sensor such that the solid source fills the one or more trenches and is disposed on the surface of the substrate. The surface of the image sensor is then planarized so that the solid source remains only in the trenches. A thermal drive operation is performed to cause at least a portion of the one or more dopants in the solid source to diffuse into the portions of the substrate or layer that are immediately adjacent to and surround the sidewall and bottom surfaces of the trenches. The diffused dopant or dopants form passivation regions that passivate the interface between the substrate or layer and the sidewall and bottom surfaces of the trenches.
摘要翻译：沟槽形成在衬底或层中，并且掺杂有一种或多种掺杂剂的固体源沉积在图像传感器上，使得固体源填充一个或多个沟槽并且设置在衬底的表面上。然后将图像传感器的表面平坦化，使得固体源仅保留在沟槽中。执行热驱动操作以使固体源中的一种或多种掺杂剂的至少一部分扩散到紧邻和围绕沟槽的侧壁和底表面的衬底或层的部分。扩散掺杂剂或掺杂剂形成钝化区域，其钝化衬底或层与沟槽的侧壁和底表面之间的界面。

13. 发明申请

WO2010068236A1 SHALLOW TRENCH ISOLATION REGIONS IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的浅层分离区域
公开(公告)号：WO2010068236A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/006103
申请日：2009-11-13
申请人： EASTMAN KODAK COMPANY , STEVENS, Eric Gordon
发明人： STEVENS, Eric Gordon
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14689
摘要： An image sensor includes an imaging area that includes a plurality of pixels, with each pixel (500) including a photosensitive charge storage region (618) formed in a substrate. A passivation implantation region (616) contiguously surrounds the side wall and bottom surfaces of each trench in the one or more trench isolation regions. A portion of each passivation implantation region is laterally adjacent to a respective charge storage region and resides only in an isolation gap disposed between the respective charge storage region and a respective trench isolation region and does not substantially reside under the charge storage region. Each passivation implantation region is formed by implanting one or more dopants at a low energy into the side wall and bottom surfaces of each trench after annealing the image sensor and prior to filling the trenches with an insulating material.
摘要翻译：图像传感器包括包括多个像素的成像区域，每个像素（500）包括形成在基板中的光敏电荷存储区域（618）。钝化注入区域（616）连续地围绕所述一个或多个沟槽隔离区域中的每个沟槽的侧壁和底表面。每个钝化注入区域的一部分横向相邻于相应的电荷存储区域，并且仅驻留在设置在相应的电荷存储区域和相应沟槽隔离区域之间的隔离间隙中，并且基本上不位于电荷存储区域下方。每个钝化注入区域通过在退火图像传感器之后和在用绝缘材料填充沟槽之前将低能量的一种或多种掺杂剂注入每个沟槽的侧壁和底表面中来形成。

14. 发明申请

WO2007149137A1 PMOS PIXEL STRUCTURE WITH LOW CROSS TALK 审中-公开
标题翻译：具有低交叉点的PMOS像素结构
公开(公告)号：WO2007149137A1
公开(公告)日：2007-12-27
申请号：PCT/US2007/007388
申请日：2007-03-23
申请人： EASTMAN KODAK COMPANY , STEVENS, Eric, Gordon , KOMORI, Hirofumi
发明人： STEVENS, Eric, Gordon , KOMORI, Hirofumi
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14643 , H01L27/14656
摘要： An image sensor with an image area having a plurality of pixels each having a photodetector of a first conductivity type, the image sensor includes a substrate of the first conductivity type; a first layer of the second conductivity type between the substrate and the photodetectors, spanning the image area and biased at predetermined potential with respect to the substrate for driving excess carriers into the substrate to reduce cross talk; one or more adjacent active electronic components disposed in the first layer within each pixel; and electronic circuitry disposed in the substrate outside of the image area.
摘要翻译：一种图像传感器，具有具有多个像素的图像区域，每个像素具有第一导电类型的光电检测器，所述图像传感器包括第一导电类型的基板; 在衬底和光电检测器之间的第二导电类型的第一层跨越图像区域并相对于衬底偏置在预定电位，用于将过量的载流子驱动到衬底中以减少串扰; 设置在每个像素内的第一层中的一个或多个相邻的有源电子部件; 以及设置在图像区域外的基板中的电子电路。

15. 发明申请

WO2007038107A3 PHOTODETECTOR AND N-LAYER STRUCTURE FOR IMPROVED COLLECTION 审中-公开
标题翻译：用于改进收集的光电转换器和N层结构
公开(公告)号：WO2007038107A3
公开(公告)日：2007-10-04
申请号：PCT/US2006036559
申请日：2006-09-18
申请人： EASTMAN KODAK CO , STEVENS ERIC GORDON , NICHOLS DAVID NEWELL
发明人： STEVENS ERIC GORDON , NICHOLS DAVID NEWELL
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14643 , H01L31/035236
摘要： An image sensor with an image area having a plurality of photodetectors of a first conductivity type includes a substrate of the second conductivity type; a first layer of the first conductivity type spanning the image area; a second layer of the second conductivity type; wherein the first layer is between the substrate and the second layer, and the plurality of photodetectors is disposed in the second layer and abut the first layer.
摘要翻译：具有第一导电类型的多个光电检测器的具有图像区域的图像传感器包括第二导电类型的基板; 跨越图像区域的第一导电类型的第一层; 第二导电类型的第二层; 其中所述第一层位于所述衬底和所述第二层之间，并且所述多个光电检测器设置在所述第二层中并邻接所述第一层。

16. 发明申请

WO2010068252A1 IMAGE SENSORS WITH LATERAL OVERFLOW DRAINS 审中-公开
标题翻译：具有横向溢流排水的图像传感器
公开(公告)号：WO2010068252A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/006415
申请日：2009-12-07
申请人： EASTMAN KODAK COMPANY , BANGHART, Edmund, Kenneth , STEVENS, Eric, Gordon , DOAN, Hung Quoc
发明人： BANGHART, Edmund, Kenneth , STEVENS, Eric, Gordon , DOAN, Hung Quoc
IPC分类号： H01L27/148
CPC分类号： H01L27/14887
摘要： A lateral overflow drain (610) and a channel stop (608) are fabricated using a double mask process (1300, 1500). Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺（1300,1500）制造横向溢流漏斗（610）和通道停止件（608）。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢流漏斗的一个边缘与相应的通道挡块的边缘对准。

17. 发明申请

WO2010068244A1 METHOD OF FABRICATING IMAGE SENSORS WITH LATERAL OVERFLOW DRAINS 审中-公开
标题翻译：具有横向溢流排水的图像传感器的方法
公开(公告)号：WO2010068244A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/006283
申请日：2009-11-25
申请人： EASTMAN KODAK COMPANY , BANGHART, Edmund, Kenneth , STEVENS, Eric, Gordon , DOAN, Hung, Quoc
发明人： BANGHART, Edmund, Kenneth , STEVENS, Eric, Gordon , DOAN, Hung, Quoc
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14689 , H01L27/14674 , H01L27/14887
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

18. 发明申请

WO2008073247A1 TWO EPITAXIAL LAYERS WITH BURIED SUBCOLLECTOR TO REDUCE CROSSTALK IN AN IMAGE SENSOR 审中-公开
标题翻译：两个外延层与BURIED SUBCOLLECTOR减少图像传感器中的CROSSTALK
公开(公告)号：WO2008073247A1
公开(公告)日：2008-06-19
申请号：PCT/US2007/024888
申请日：2007-12-05
申请人： EASTMAN KODAK COMPANY , LAVINE, James Philip , STEVENS, Eric Gordon
发明人： LAVINE, James Philip , STEVENS, Eric Gordon
IPC分类号： H01L27/146
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate (10) of a first conductivity type having an image area wi.th -a plurality of photosensitive sites (70), wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector (40) of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括第一导电类型的基板（10），其具有第二至第三多个感光部位（70）的图像区域，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极（40），所述第二电导率收集另外部分所产生的电荷，否则其将扩散到相邻的光敏部位。

19. 发明申请

WO2006026434A1 FAST FLUSH STRUCTURE FOR IMAGE SENSORS 审中-公开
标题翻译：图像传感器快速FLUSH结构
公开(公告)号：WO2006026434A1
公开(公告)日：2006-03-09
申请号：PCT/US2005/030419
申请日：2005-08-25
申请人： EASTMAN KODAK COMPANY , STEVENS, Eric, Gordon , SHEPHERD, John, P. , NICHOLS, David, Newell
发明人： STEVENS, Eric, Gordon , SHEPHERD, John, P. , NICHOLS, David, Newell
IPC分类号： H01L27/148
CPC分类号： H01L27/1485 , H01L27/14887
摘要： An image sensor includes a substrate; a plurality of pixels on the substrate, one or more of the pixels comprises (i) first and second charge-storage regions having at least one photosensitive area; (ii) a lateral overflow drain; (iii) a first lateral overflow gate adjacent the first charge-storage regions that passes substantially all charges from the first charge-storage region to the lateral overflow drain; and (iv) a second lateral gate adjacent the second charge-storage region that passes excess photo-generated charge into the lateral overflow drain for blooming control.
摘要翻译：图像传感器包括基板; 基板上的多个像素，一个或多个像素包括（i）具有至少一个感光区域的第一和第二电荷存储区域; （ii）横向溢流排水管; （iii）与所述第一电荷存储区相邻的第一横向溢出门，所述第一电荷存储区基本上将所有电荷从所述第一电荷存储区域传递到所述横向溢流漏极; 和（iv）邻近第二电荷存储区域的第二横向栅极，其将过量的光生电荷传递到横向溢流漏极中以进行开花控制。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式