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    • 18. 发明申请
    • III-NITRIDE MATERIALS INCLUDING LOW DISLOCATION DENSITIES AND METHODS ASSOCIATED WITH THE SAME
    • 三氮化物材料包括低偏差密度和与之相关的方法
    • WO2006014472A1
    • 2006-02-09
    • PCT/US2005/023934
    • 2005-07-06
    • NITRONEX CORPORATIONPINER, Edwin, L.ROBERTS, John, ClaassenRAJAGOPAL, Pradeep
    • PINER, Edwin, L.ROBERTS, John, ClaassenRAJAGOPAL, Pradeep
    • C30B29/40
    • C30B29/403C30B25/02H01L21/02381H01L21/02458H01L21/02488H01L21/02505H01L21/0251H01L21/02513H01L21/0254H01L21/02543
    • Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material regions) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material regions) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material regions) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material regions) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects.
    • 提供包括一个或多个III族氮化物材料区域(例如,氮化镓材料区域)的半导体结构以及与这种结构相关联的方法。 III族氮化物材料区域)有利地具有低位错密度,特别是低螺旋位错密度。 在一些实施例中,可以基本上消除III族氮化物材料区域中的螺旋位错的存在)。 存在III族氮化物材料区域下方的应变吸收层)和/或加工条件可有助于实现低螺旋位错密度。 在一些实施例中,具有低位错密度的III族氮化物材料区域包括用作器件的有源区的氮化镓材料区域。 活性器件区域(例如,氮化镓材料区域)的低螺旋位错密度可以通过增加电子传输,限制非辐射复合和增加组成/生长均匀性等而导致改进的性能(例如电和光学) 效果。
    • 20. 发明申请
    • SOUND BARRIER
    • 声音障碍
    • WO0042255A8
    • 2000-11-02
    • PCT/AU0000006
    • 2000-01-07
    • ROBERTS JOHN KENNETHARCUS KENNETH JAMESSTANDLEY MICHAEL
    • ROBERTS JOHN KENNETHARCUS KENNETH JAMESSTANDLEY MICHAEL
    • E01F8/00
    • E01F8/0023E01F8/0011
    • The present invention provides a sound barrier (1) including a plurality of elongate panels (2) having first and second ends (3 and 4), each panel (2) being formed from a shell (5) defining an inner chamber (6) adapted to contain sound attenuating material, said plurality of panels (2) being supportable in a planar configuration by a first support means (7) adapted to engage said first and second ends (3 and 4) respectively. Preferably the shell (5) is constructed from plastic and/or fibreglass and the sound attenuating material is a fluid such as water which may optionally include other materials such as sand, slurry, concrete rubble, mud, etc. Some embodiments include second support means (9) which are attachable to the post (7) so as to engage the panels (2) and thereby transfer a substantial portion, or all of, the weight of each panel (2) to the post (7).
    • 本发明提供一种包括具有第一和第二端部(3和4)的多个细长面板(2)的声音屏障(1),每个面板(2)由限定内腔室(6)的壳体(5)形成, 适合于包含声音衰​​减材料,所述多个面板(2)可通过适于分别接合所述第一端和第二端(3和4)的第一支撑装置(7)以平面构造支撑。 优选地,壳体5由塑料和/或玻璃纤维构成,并且声音衰减材料是诸如水的流体,其可以可选地包括诸如沙子,泥浆,混凝土碎石,泥浆等的其他材料。一些实施例包括第二支撑装置 (9),其可附接到所述支柱(7)以与所述面板(2)接合并由此将每个面板(2)的重量的大部分或全部传递到所述支柱(7)。