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11. 发明申请

WO2003034503A1 A THIN FILM TRANSISTOR USING POLYSILICON AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：一种使用多晶硅的薄膜晶体管及其制造方法
公开(公告)号：WO2003034503A1
公开(公告)日：2003-04-24
申请号：PCT/KR2002/001298
申请日：2002-07-09
申请人： SAMSUNG ELECTRONICS CO., LTD. , KANG, Myung-Koo , KIM, Hyun-Jae , KANG, Sook-Young , PARK, Cheol-Ho
发明人： KANG, Myung-Koo , KIM, Hyun-Jae , KANG, Sook-Young , PARK, Cheol-Ho
IPC分类号： H01L29/786
CPC分类号： H01L29/66757 , H01L29/78675
摘要： In a method of manufacturing a thin film transistor according to the present invention, an amorphous silicon thin film is firstly formed on an insulating substrate and a planarization layer is formed thereon. Thereafter, the amorphous silicon thin film is crystallized by a solidification process using a laser-irradiation to form a polysilicon thin film. Next, the polysilicon thin film and the planarization layer are patterned to form a semiconductor layer, and a gate insulating layer covering the semiconductor layer is formed. Then, a gate electrode is formed on the gate insulating layer opposite the semiconductor layer. Next, impurities are implanted into the semiconductor layer to form a source region and a drain region opposite each other with respect to the gate electrode, and a source electrode and a drain electrode electrically connected to the source region and the drain region, respectively, are formed.
摘要翻译：在本发明的薄膜晶体管的制造方法中，首先在绝缘基板上形成非晶硅薄膜，在其上形成平坦化层。此后，通过使用激光照射的固化工艺使非晶硅薄膜结晶，形成多晶硅薄膜。接下来，对多晶硅薄膜和平坦化层进行构图以形成半导体层，并且形成覆盖半导体层的栅极绝缘层。然后，在与半导体层相对的栅极绝缘层上形成栅电极。接下来，将杂质注入到半导体层中以形成相对于栅极彼此相对的源极区域和漏极区域，并且分别与源极区域和漏极区域电连接的源极电极和漏极电极是形成。

12. 发明申请

WO2010077058A3 MOTOR TRANSMISSION APPARATUS HAVING A PLURALITY OF ELECTRIC MOTORS, POWER TRANSMISSION APPARATUS COMPRISING SAME, AND HYBRID VEHICLE COMPRISING THE MOTOR TRANSMISSION APPARATUS 审中-公开
标题翻译：具有多个电动马达的电动机传动装置，包括该电动机的动力传动装置和包括电动机传动装置的混合动力车
公开(公告)号：WO2010077058A3
公开(公告)日：2010-10-28
申请号：PCT/KR2009007871
申请日：2009-12-29
申请人： KANG MYUNG KOO
发明人： KANG MYUNG KOO
IPC分类号： B60K6/50 , B60K17/06 , F16H3/72
CPC分类号： B60K6/445 , B60K6/52 , Y02T10/6239 , Y02T10/6265
摘要： The present invention relates to a transmission apparatus for an electric vehicle or a hybrid vehicle. More particularly, the present invention relates to a motor transmission apparatus which has a plurality of electric motors, driving gears connected to the electric motors, and slave gears, to drive the front or rear wheels of the vehicle independently from one another. The present invention also relates to a hybrid vehicle using the motor transmission apparatus. The present invention discloses a motor transmission apparatus for a vehicle which is constituted by two or more electric motors connected to a battery, driving gears connected to the respective motor shafts of the electric motors, and slave gears engaged with the driving gears to drive either the front wheels or the rear wheels of the vehicle. The present invention also relates to a hybrid vehicle using the motor transmission apparatus.
摘要翻译：本发明涉及一种电动汽车或混合动力汽车的发送装置。更具体地说，本发明涉及一种电动机传动装置，其具有多个电动机，连接到电动机的驱动齿轮和从动齿轮，以彼此独立地驱动车辆的前轮或后轮。本发明还涉及一种使用该马达传动装置的混合动力车辆。本发明公开了一种车辆用电动机传动装置，其由与电池连接的两个以上的电动机构成，与电动机的各个电动机轴连接的驱动齿轮，与从动齿轮啮合的从动齿轮，前轮或车轮后轮。本发明还涉及一种使用该马达传动装置的混合动力车辆。

13. 发明申请

WO2009113749A1 WAFER TESTING SYSTEM COMPRISING CHILLER 审中-公开
标题翻译：包括冷冻机的水果测试系统
公开(公告)号：WO2009113749A1
公开(公告)日：2009-09-17
申请号：PCT/KR2008/001499
申请日：2008-03-17
申请人： SEMICS INC. , KANG, Myung-Koo , PARK, Chan-Min , KANG, Kun-Su
发明人： KANG, Myung-Koo , PARK, Chan-Min , KANG, Kun-Su
IPC分类号： H01L21/66
CPC分类号： H01L21/67109 , G01R31/2877
摘要： A wafer test system including a wafer prober device having a chuck is provided. The wafer test system includes: a dry air supply device receiving compressed air and dehumidifying the compressed air; a cooling device including a container for storing liquefied gas; and a central control device cooling dry air supplied from the dry air supply device, mixing the cooled dry air with a predetermined amount of the liquefied gas stored in the container, and supplying the mixture to the chuck of the wafer prober device. Accordingly, the wafer test system has refrigeration efficiency optimized for testing a wafer in an ultra-low temperature environment by using the wafer prober device, thereby reducing a preparation time for testing the wafer in the ultra-low temperature environment.
摘要翻译：提供了包括具有卡盘的晶片探测器装置的晶片测试系统。晶片测试系统包括：干燥空气供应装置，接收压缩空气并对压缩空气进行除湿; 冷却装置，包括用于储存液化气体的容器; 以及中央控制装置，其冷却从干燥空气供给装置供给的干燥空气，将冷却的干燥空气与存储在容器中的规定量的液化气体混合，将混合物供给到晶片探测装置的卡盘。因此，晶片测试系统具有优化的制冷效率，用于通过使用晶片探针器件在超低温环境中测试晶片，从而减少了在超低温环境下测试晶片的准备时间。

14. 发明申请

WO2004042781A3 THIN FILM TRANSISTOR ARRAY PANEL 审中-公开
标题翻译：薄膜晶体管阵列
公开(公告)号：WO2004042781A3
公开(公告)日：2004-09-30
申请号：PCT/KR0302346
申请日：2003-11-04
申请人： SAMSUNG ELECTRONICS CO LTD , LEE SU-GYEONG , KANG SOOK-YOUNG , KANG MYUNG-KOO , KIM HYUN-JAE , IM JAMES S
发明人： LEE SU-GYEONG , KANG SOOK-YOUNG , KANG MYUNG-KOO , KIM HYUN-JAE , IM JAMES S
IPC分类号： G02F1/136 , H01L21/77 , H01L27/12 , H01L29/786
CPC分类号： H01L27/1285 , H01L27/1214 , H01L27/1296 , H01L29/78645
摘要： A thin film transistor array panel is provided, which includes: a substrate (110) including a plurality of pixel areas; a semiconductor layer (140, 142) formed on the substrate (110) and including a plurality of pairs of first (140) and second (142) semiconductor portions in respective pixel areas; a first insulating layer (130) formed on the semiconductor layer; a gate wire (121-124); formed on the first insulating layer; a second insulating layer (180) formed on the gate wire (121-124); a data wire (171, 172) formed on the second insulating layer (180); a third insulating layer (185) formed on the data wire (171, 172) a pixel electrode (192) formed on the third insulating layer (185) and connected to the data wire (171, 172), wherein width and length of at least one of the first (140) and the second (142) semiconductor portions vary between at least two pixel areas.
摘要翻译：提供薄膜晶体管阵列面板，其包括：包括多个像素区域的基板（110）; 形成在所述基板（110）上并在各像素区域中包括多对第一（140）和第二（142）半导体部分的半导体层（140,142）形成在所述半导体层上的第一绝缘层（130）栅极线（121-124）; 形成在第一绝缘层上; 形成在栅极导线（121-124）上的第二绝缘层（180）; 形成在第二绝缘层（180）上的数据线（171,172）; 形成在数据线（171,172）上的形成在第三绝缘层（185）上并连接到数据线（171,172）的像素电极（192）的第三绝缘层（185），其中宽度和长度为第一（140）和第二（142）半导体部分中的至少一个在至少两个像素区域之间变化。

15. 发明申请

WO2004042781A2 THIN FILM TRANSISTOR ARRAY PANEL 审中-公开
标题翻译：薄膜晶体管阵列
公开(公告)号：WO2004042781A2
公开(公告)日：2004-05-21
申请号：PCT/KR2003/002346
申请日：2003-11-04
申请人： SAMSUNG ELECTRONICS CO., LTD. , LEE, Su-Gyeong , KANG, Sook-Young , KANG, Myung-Koo , KIM, Hyun-Jae , IM, James S.
发明人： LEE, Su-Gyeong , KANG, Sook-Young , KANG, Myung-Koo , KIM, Hyun-Jae , IM, James S.
IPC分类号： H01L
CPC分类号： H01L27/1214 , H01L27/1255 , H01L27/1285 , H01L27/1296 , H01L29/78645
摘要： A thin film transistor array panel is provided, which includes: a substrate including a plurality of pixel areas; a semiconductor layer formed on the substrate and including a plurality of pairs of first and second semiconductor portions in respective pixel areas; a first insulating layer formed on the semiconductor layer; a gate wire formed on the first insulating layer; a second insulating layer formed on the gate wire; a data wire formed on the second insulating layer; a third insulating layer formed on the data wire; a pixel electrode formed on the third insulating layer and connected to the data wire, wherein width and length of at least one of the first and the second semiconductor portions vary between at least two pixel areas.
摘要翻译：提供一种薄膜晶体管阵列面板，其包括：包括多个像素区域的基板; 半导体层，形成在所述基板上，并且在各像素区域中包括多对第一和第二半导体部分; 形成在所述半导体层上的第一绝缘层; 形成在所述第一绝缘层上的栅极线; 形成在栅极线上的第二绝缘层; 形成在所述第二绝缘层上的数据线; 形成在数据线上的第三绝缘层; 形成在第三绝缘层上并连接到数据线的像素电极，其中第一和第二半导体部分中的至少一个的宽度和长度在至少两个像素区域之间变化。

16. 发明申请

WO2003052833A1 A METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING POLY SILICON 审中-公开
标题翻译：使用聚硅制造薄膜晶体管的方法
公开(公告)号：WO2003052833A1
公开(公告)日：2003-06-26
申请号：PCT/KR2002/000131
申请日：2002-01-29
申请人： SAMSUNG ELECTRONICS CO., LTD. , SONG, Jean, Ho , CHOI, Joon, Hoo , CHOI, Beom-Rak , KANG, Myung-Koo , KANG, Sook-Young
发明人： SONG, Jean, Ho , CHOI, Joon, Hoo , CHOI, Beom-Rak , KANG, Myung-Koo , KANG, Sook-Young
IPC分类号： H01L29/786
CPC分类号： H01L29/66757 , H01L29/78675
摘要： A manufacturing method of a thin film transistor. An amorphous silicon thin film is formed on an insulating substrate, and is crystallized by a lateral solidification process with illumination of laser beams into the amorphous silicon thin film to form a polysilicon thin film. Next, protrusion portions protruding from the surface of the polysilicon thin film are removed by plasma dry-etching using a gas mixture including Cl 2 , SF 6 and Ar at the ratio of 3:1:2 to smooth the surface of the polysilicon thin film, and the semiconductor layer is formed by patterning the polysilicon thin film. A gate insulating film covering the semiconductor layer is formed and a gate electrode is formed on the gate insulating film opposite the semiconductor layer. A source region and a drain region opposite each other with respect to the gate electrode are formed by implanting impurities into I the semiconductor layer and a source electrode and drain electrode are forined to be electrically connected to the source region and drain region.
摘要翻译：薄膜晶体管的制造方法。在绝缘基板上形成非晶硅薄膜，并通过横向固化工艺使激光束照射到非晶硅薄膜中而形成多晶硅薄膜而结晶。接下来，通过使用包含Cl 2，SF 6和Ar的气体混合物以3:1:2的比例通过等离子体干法蚀刻去除从多晶硅薄膜的表面突出的突出部分，以平滑多晶硅薄膜的表面，并且通过图案化多晶硅薄膜形成半导体层。形成覆盖半导体层的栅极绝缘膜，并且在与半导体层相对的栅极绝缘膜上形成栅电极。通过将杂质注入到半导体层中而形成源极区域和相对于栅极电极相对的漏极区域，源电极和漏极电极被电连接到源极区域和漏极区域。

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