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91. 发明申请

WO2012039552A3 DEVICE FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN FILMS 审中-公开
标题翻译：用于制造多晶硅薄膜的器件
公开(公告)号：WO2012039552A3
公开(公告)日：2012-05-18
申请号：PCT/KR2011006363
申请日：2011-08-29
申请人： ENSILTECH CORP , RO JAE-SANG , HONG WON-EUI
发明人： RO JAE-SANG , HONG WON-EUI
IPC分类号： H01L21/02 , H01L29/786
CPC分类号： H01L21/02532 , H01L21/02425 , H01L21/02595 , H01L27/1285
摘要： The present invention relates to a device for applying an electric field, comprising: a chamber; a substrate stage which is installed in the chamber, and on which a substrate including a conductive film is placed; a power supply unit installed in the chamber, including an electrode terminal provided with a support and a first conductive electrode disposed in the central region of the support; and a second conductive electrode disposed between the electrode terminal and the conductive film. Thus, the present invention can provide a device for manufacturing polycrystalline silicon thin films that is capable of forming polycrystalline silicon thin films having uniform crystallinity by uniformly forming an electric field over the conductive film.
摘要翻译：本发明涉及一种施加电场的装置，包括：一个室; 衬底台，其安装在所述腔室中，并且其上放置有包括导电膜的衬底; 安装在所述室中的电源单元，包括设置有支撑件的电极端子和设置在所述支撑件的中心区域中的第一导电电极; 以及设置在电极端子和导电膜之间的第二导电电极。因此，本发明可以提供一种用于制造多晶硅薄膜的器件，其能够通过在导电膜上均匀形成电场而形成具有均匀结晶度的多晶硅薄膜。

92. 发明申请

WO2011090959A3 CONTROL OF COMPOSITION PROFILES IN ANNEALED CIGS ABSORBERS 审中-公开
标题翻译：厌氧消化吸收器中组成型号的控制
公开(公告)号：WO2011090959A3
公开(公告)日：2012-05-10
申请号：PCT/US2011021611
申请日：2011-01-19
申请人： AQT SOLAR INC , MUNTEANU MARIANA RODICA
发明人： MUNTEANU MARIANA RODICA
IPC分类号： H01L31/18 , H01L31/032
CPC分类号： H01L31/18 , H01L21/02425 , H01L21/02568 , H01L21/02614 , H01L21/02631 , H01L31/0322 , H01L31/065 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Particular embodiments of the present disclosure relate to the use of sputtering, and more particularly magnetron sputtering, in forming absorber structures, and particular multilayer absorber structures, that are subsequently annealed to obtain desired composition profiles across the absorber structures for use in photovoltaic devices.
摘要翻译：本公开的特定实施例涉及在形成吸收体结构和特定的多层吸收体结构中使用溅射，特别是磁控管溅射，其随后退火以获得跨越用于光伏器件的吸收体结构的期望的组成分布。

93. 发明申请

WO2011137216A2 METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS 审中-公开
标题翻译：基于聚合物的光伏电池的制备方法
公开(公告)号：WO2011137216A2
公开(公告)日：2011-11-03
申请号：PCT/US2011/034269
申请日：2011-04-28
申请人： DOW GLOBAL TECHNOLOGIES LLC , BRYDEN, Todd, R. , FENTON, Jeffrey, L., Jr. , MITCHELL, Gary, E. , THOMPSON, Kirk, R. , MILLS, Michael, E. , PARRILLO, David, J.
发明人： BRYDEN, Todd, R. , FENTON, Jeffrey, L., Jr. , MITCHELL, Gary, E. , THOMPSON, Kirk, R. , MILLS, Michael, E. , PARRILLO, David, J.
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , C23C14/0629 , C23C14/3414 , H01L21/0237 , H01L21/02425 , H01L21/02485 , H01L21/02557 , H01L21/02631 , H01L31/022466 , H01L31/0322 , H01L31/03928 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.
摘要翻译：本发明是一种在制造光伏电池的同时在铜硫属元素化物系吸收体上形成硫化镉基缓冲剂的方法。缓冲液在相对高的压力下溅射。所得到的电池具有良好的效率，并且根据一个实施例的特征在于吸收体和缓冲层之间的窄界面。根据第二实施方案，缓冲剂通过相对高的氧含量被进一步表征。

94. 发明申请

WO2011065665A3 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造氮化物半导体器件的方法
公开(公告)号：WO2011065665A3
公开(公告)日：2011-09-29
申请号：PCT/KR2010007188
申请日：2010-10-20
申请人： SILTRON INC , KIM YONG-JIN , LEE DONG-KUN , KIM DOO-SOO , LEE HO-JUN , LEE KYE-JIN
发明人： KIM YONG-JIN , LEE DONG-KUN , KIM DOO-SOO , LEE HO-JUN , LEE KYE-JIN
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02425 , H01L21/02458 , H01L21/02658 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.
摘要翻译：公开了一种制造氮化物半导体器件的方法。该方法包括在第一支撑衬底上形成氮化镓（GaN）外延层，在GaN外延层上形成第二支撑衬底，在除第一支撑衬底之外的另一个区域的表面上形成钝化层，蚀刻第一衬底通过使用钝化层作为掩模来支撑衬底，以及去除钝化层，从而暴露第二支撑衬底和GaN外延层。

95. 发明申请

WO2011051052A1 VERFAHREN ZUR HERSTELLUNG VON HALBLEITERSCHICHTEN 审中-公开
标题翻译：用于生产半导体层
公开(公告)号：WO2011051052A1
公开(公告)日：2011-05-05
申请号：PCT/EP2010/063713
申请日：2010-09-17
申请人： SCHÜCO TF GMBH & CO. KG , SICHLER, Steffen , WEIGEL, Sascha
发明人： SICHLER, Steffen , WEIGEL, Sascha
IPC分类号： C23C16/44
CPC分类号： C23C16/401 , C23C16/24 , C23C16/325 , C23C16/4405 , H01L21/02422 , H01L21/02425 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/0262
摘要： Ein Verfahren zum Herstellen von Halbleiterschichten in einer Beschichtungskammer (1) umfasst die Schritte: A) Auf ein Substrat (2) werden zumindest ein erstes Halbleitermaterial (3) und ein zweites Halbleitermaterial (4) aufgebracht, wobei das erste und zweite Halbleitermaterial (3,4) unterschiedliche Zusammensetzungen aufweisen und das zweite Halbleitermaterial (4) auf dem ersten Halbleitermaterial (3) aufgebracht wird; und B) Nach dem Aufbringen des ersten und zweiten Halbleitermaterials (3,4) wird das Substrat (2) aus der Beschichtungskammer (1) entfernt und Innenoberflächen (11) der Beschichtungskammer (1) werden von zweitem Halbleitermaterial (4') mittels eines ersten Reinigungsverfahrens (5) gereinigt, wobei erstes Halbleitermaterial (3') auf den Innenoberflächen (11) verbleibt.
摘要翻译：一种用于在涂覆室（1）制造半导体层的方法包括以下步骤：在基板上A）（2）至少施加一个第一半导体材料（3）和第二半导体材料（4），其中，所述第一和第二半导体材料（3， 4）具有（3）上施加所述第一半导体材料不同的组合物和所述第二半导体材料（4）; 及B）后，将第一和第二半导体材料（3,4）的应用程序被删除，在基板（2）（从涂布室的涂布室1）和内表面（11）（1）通过一个第一装置是一个第二半导体材料（4“）的纯化过程（5），由此所述内表面上的第一半导体材料（3“）（11）保持。

96. 发明申请

WO2010099544A3 TILED SUBSTRATES FOR DEPOSITION AND EPITAXIAL LIFT OFF PROCESSES 审中-公开
标题翻译：用于沉积和外延提升过程的倾斜基板
公开(公告)号：WO2010099544A3
公开(公告)日：2011-01-13
申请号：PCT/US2010025796
申请日：2010-03-01
申请人： ALTA DEVICES INC , HE GANG , HEGEDUS ANDREAS G
发明人： HE GANG , HEGEDUS ANDREAS G
IPC分类号： H01L31/042
CPC分类号： C30B25/18 , C30B29/42 , H01L21/02395 , H01L21/02425 , H01L21/02463 , H01L21/6835 , H01L31/03046 , H01L31/0735 , H01L31/184 , H01L31/1844 , H01L2221/6835 , Y02E10/544
摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) films and methods for producing such films. Embodiments provide a method to simultaneously and separately grow a plurality of ELO films or stacks on a common support substrate which is tiled with numerous epitaxial growth substrates or surfaces. Thereafter, the ELO films are removed from the epitaxial growth substrates by an etching step during an ELO process. The tiled growth substrate contains the epitaxial growth substrates disposed on the support substrate may be reused to grow further ELO films. In one embodiment, a tiled growth substrate is provided which includes two or more gallium arsenide growth substrates separately disposed on a support substrate having a coefficient of thermal expansion within a range from about 5 10-6 C-1 to about 9 10-6 C-1.
摘要翻译：本发明的实施方案一般涉及外延剥离膜（ELO）膜及其制造方法。实施例提供了一种在共同的支撑衬底上同时且分开地生长多个ELO膜或叠层的方法，所述共同支撑衬底被铺设有许多外延生长衬底或表面。此后，在ELO工艺期间通过蚀刻步骤从外延生长衬底去除ELO膜。平铺的生长衬底包含设置在支撑衬底上的外延生长衬底可以被再次用于生长另外的ELO膜。在一个实施例中，提供了一种平铺生长衬底，其包括分别设置在支撑衬底上的两个或更多个砷化镓生长衬底，其具有在约5×10 -6 C -1至约9×10 -6 C的范围内的热膨胀系数 -1。

97. 发明申请

WO2010039177A2 A SEMICONDUCTOR DEVICE HAVING A MULTI-LAYER SUBSTRATE AND A METHOD OF FORMING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：具有多层衬底的半导体器件和形成半导体器件的方法
公开(公告)号：WO2010039177A2
公开(公告)日：2010-04-08
申请号：PCT/US2009005236
申请日：2009-09-21
申请人： UNITED SOLAR OVONIC LLC , DOEHLER JOACHIM , JONES SCOTT , HOFFMAN KEVIN , LIU TONGYU
发明人： DOEHLER JOACHIM , JONES SCOTT , HOFFMAN KEVIN , LIU TONGYU
IPC分类号： H01L21/20
CPC分类号： H01L31/18 , H01L21/02422 , H01L21/02425 , H01L21/02428 , H01L21/02521 , H01L31/02
摘要： A semiconductor device is provided in accordance with an exemplary embodiment. The semiconductor device includes a semiconductive layer disposed over a multi-layer substrate. The multi-layer substrate includes a plurality of dissimilar regions, one of which is an inner magnetic region and the remainder of the multi-layer substrate is thermally symmetrical about the inner magnetic region.
摘要翻译：根据示例性实施例提供了一种半导体器件。该半导体器件包括设置在多层衬底上的半导体层。多层衬底包括多个不相似的区域，其中一个是内部磁性区域，并且多层衬底的其余部分关于内部磁性区域是热对称的。

98. 发明申请

WO2010031010A1 SOLAR PHOTOVOLTAIC DEVICES AND METHODS OF MAKING THEM 审中-公开
标题翻译：太阳能光伏器件及其制造方法
公开(公告)号：WO2010031010A1
公开(公告)日：2010-03-18
申请号：PCT/US2009/056873
申请日：2009-09-14
申请人： SANDIA SOLAR TECHNOLOGIES LLC , LOMASNEY, Henry, L.
发明人： LOMASNEY, Henry, L.
IPC分类号： C23C16/54 , H01L21/20
CPC分类号： C23C30/00 , C23C26/00 , C23C28/00 , H01L21/02422 , H01L21/02425 , H01L21/02568 , H01L31/0392 , H01L31/03928 , H01L31/0481 , Y02E10/541 , Y02P70/521
摘要： Solar photovoltaic (PV) devices, e.g., those based on the Copper Indium Selenide (CIS) family of absorbers, including CuIn(1-x)Ga(X)Se2 (CIGS) absorber thin-film PV devices, are provided. Embodiments provide PV devices comprising an alkali metal- containing polymeric film (ACPF), which is a film formed from a composite comprising an alkali metal-containing material and a polymer. Embodiments of this disclosure also provide PV devices comprising a thermally stable polymer film that does not contain an alkali metal (TSP). Included within the embodiments of this disclosure are flexible PV devices comprising a flexible base substrate onto which one or more ACPFs and/or TSPs is/are provided, as well as flexible PV devices wherein an ACPF or TSP itself constitutes the base substrate in the form of a stand alone film. Processes for making such flexible PV devices include roll-to-roll processes. PV devices disclosed herein will provide improved energy conversion efficiencies as a result of the delivery of sodium dopant into the absorber layer.
摘要翻译：提供太阳能光伏（PV）装置，例如基于硒化铟锡（CIS）系列吸收体的太阳能光伏（PV）器件，包括CuIn（1-x）Ga（X）Se2（CIGS）吸收体薄膜光伏器件。实施方案提供了包含含碱金属的聚合物膜（ACPF）的PV器件，其是由包含碱金属的材料和聚合物的复合材料形成的膜。本公开的实施方案还提供了包含不含碱金属（TSP）的热稳定聚合物膜的PV装置。包括在本公开的实施例内的柔性PV器件包括柔性基底，其上提供有一个或多个ACPF和/或TSP，柔性光伏器件，其中ACPF或TSP本身构成形式的基底的独立电影。用于制造这种柔性PV装置的方法包括卷对卷工艺。作为将钠掺杂剂递送到吸收层的结果，本文公开的PV器件将提供改进的能量转换效率。

99. 发明申请

WO2010006080A2 GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS 审中-公开
标题翻译： GRAPHENE和六方硼氮化硼平面及相关方法
公开(公告)号：WO2010006080A2
公开(公告)日：2010-01-14
申请号：PCT/US2009/049977
申请日：2009-07-08
申请人： SUNG, Chien-Min
发明人： SUNG, Chien-Min
IPC分类号： C01B31/02 , H01L21/02 , H01L21/20
CPC分类号： C01B31/0446 , B01J21/18 , B82Y30/00 , B82Y40/00 , C01B21/0648 , C01B32/184 , C01B32/194 , C01B32/196 , C01B2204/04 , C01B2204/32 , H01L21/0242 , H01L21/02425 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02573 , H01L21/02625 , H01L23/53276 , H01L2924/0002 , H05K1/0353 , Y10T428/30 , H01L2924/00
摘要： Graphene layers, hexagonal boron nitride layers, as well as other materials made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphene layer is provided. Such a method may include mixing a carbon source with a horizontally oriented molten solvent, precipitating the carbon source from the molten solvent to form a graphite layer across the molten solvent, and separating the graphite layer into a plurality of graphene layers.
摘要翻译：公开了石墨烯层，六方氮化硼层以及主要由sp2键合原子制成的其他材料和相关方法。在一个方面，例如，提供了一种形成石墨烯层的方法。这样的方法可以包括将碳源与水平取向的熔融溶剂混合，使碳源从熔融溶剂中沉淀以形成横跨熔融溶剂的石墨层，并将石墨层分离成多个石墨烯层。

100. 发明申请

WO2009066949A3 FABRICATING METHOD OF POLYCRYSTALLINE SILICON THIN FILM, POLYCRYSTALLINE SILICON THIN FILM FABRICATED USING THE SAME 审中-公开
标题翻译：多晶硅薄膜的制造方法，使用其制造的多晶硅薄膜
公开(公告)号：WO2009066949A3
公开(公告)日：2009-08-27
申请号：PCT/KR2008006863
申请日：2008-11-21
申请人： RO JAE-SANG , HONG WON-EUI
发明人： RO JAE-SANG , HONG WON-EUI
IPC分类号： H01L21/20
CPC分类号： H01L21/02425 , H01L21/02381 , H01L21/02422 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02595 , H01L21/02667 , H01L27/1281 , H01L29/66757 , H01L29/78603
摘要： Provided are a method of fabricating a polycrystalline silicon thin film using high temperature heat generated by Joule heating induced by application of an electrical field to a conductive layer, which can ensure process stability at high temperature, and thus processing time can be reduced and a polycrystalline silicon thin film having excellent crystallinity can be obtained, a polycrystalline thin film using the method and a thin film transistor including the polycrystalline thin film. The method includes providing a substrate, forming a metal or metal alloy layer having a melting point of 13000C or more on the substrate, forming an insulating layer on the metal or metal alloy layer, forming an amorphous silicon (a-Si) thin film, an amorphous/polycrystalline composite silicon thin film, or a poly-Si thin film on the insulating layer, and applying an electrical filed to the metal or metal alloy layer to induce Joule heating and generate high tem¬ perature heat, and crystallizing and annealing the amorphous silicon (a-Si) thin film, the amorphous/polycrystalline composite silicon thin film, or the poly-Si thin film using the high temperature heat.
摘要翻译：提供了使用通过向导电层施加电场而引起的焦耳加热产生的高温热制造多晶硅薄膜的方法，这可以确保高温下的工艺稳定性，从而可以减少处理时间，并且可以减少多晶可以获得具有优异结晶度的硅薄膜，使用该方法的多晶薄膜和包括多晶薄膜的薄膜晶体管。该方法包括提供基板，在基板上形成熔点为1300℃以上的金属或金属合金层，在金属或金属合金层上形成绝缘层，形成非晶硅（a-Si）薄膜，绝缘层上的非晶/多晶复合硅薄膜或多晶硅薄膜，并向金属或金属合金层施加电场以引起焦耳加热并产生高温度热，并使结晶和退火非晶硅（a-Si）薄膜，非晶/多晶复合硅薄膜或使用高温热的多晶硅薄膜。

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