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    • 94. 发明申请
    • TWO DIMENSIONAL SEPARATION SYSTEM
    • 两维分离系统
    • WO1994020840A1
    • 1994-09-15
    • PCT/US1994001863
    • 1994-02-22
    • THE UNIVERSITY OF NORTH CAROLINA AT CHAPEL HILL
    • THE UNIVERSITY OF NORTH CAROLINA AT CHAPEL HILLJORGENSON, James, W.LEMMO, Anthony, V.
    • G01N27/26
    • G01N30/38G01N27/44743G01N27/44773G01N30/02G01N30/461G01N30/463G01N2030/027G01N2030/383
    • The system comprises a flow gating interface having an effluent channel and a gating channel (36) formed therein. The gating channel (36) transversely intersects the efluent channel at an intersection portion so that the channels are in fluid communication with one another. The intersection portion divides the effluent channel into an upstream portion and a downstream portion, and divides the gating channel (36) into an upstream portion and a dowstream portion. A liquid chromatography column (34) is inserted into the effluent channel upstream portion and an electrophoresis capillary (35) is inserted into the effluent channel downstream portion. A flush solution inlet line (44) is connected to the gating cahanel upstream portion, and a flush solution outlet line (45) is connected to the gating channel downstream portion. A valve (41) regulates the flow of flush solution from flush solution inlet line (44) to the gating channel upstream portion.
    • 该系统包括具有流出通道的流动门控接口和其中形成的门控通道(36)。 门控通道(36)在交叉部分处与流出液通道横向相交,使得通道彼此流体连通。 交叉部分将流出通道分成上游部分和下游部分,并将浇口通道(36)分成上游部分和下游部分。 将液相色谱柱(34)插入流出物通道上游部分,并将电泳毛细管(35)插入流出物通道下游部分。 冲洗溶液入口管线(44)连接到门控上游部分,并且冲洗出口管线(45)连接到门控通道下游部分。 阀(41)调节冲洗溶液从冲洗溶液入口管线(44)到浇口通道上游部分的流动。
    • 95. 发明申请
    • METHOD FOR PLASMA PROCESSING AT HIGH PRESSURES
    • 高压等离子体处理方法
    • WO1994006150A1
    • 1994-03-17
    • PCT/US1993008202
    • 1993-08-31
    • THE UNIVERSITY OF NORTH CAROLINA AT CHAPEL HILLHOOKE, William, M.BOZEMAN, Steven, P.
    • THE UNIVERSITY OF NORTH CAROLINA AT CHAPEL HILL
    • H01J37/32
    • H01J37/32357
    • A method for plasma processing includes using a relatively high magnetic field and a relatively high pressure to create a first plasma region adjacent a window of a processing chamber having a lower radiation absorption and a second plasma region adjacent a substrate holder having a higher radiation absorption. Accordingly, a cooler plasma region is created adjacent the window to prevent contaminants from being etched from the window and adjacent chamber surface, and hotter plasma region is created adjacent the substrate to increase the processing rate. Additionally, the relatively high pressure of the processing gas, preferably greater than about 10 Torr and more preferably greater than about 100 Torr, increases the density of the plasma thereby increasing the processing rate. Alternatively, a high magnetic field and a high pressure create a radiation absorption region which is on the order of centimeters thick, for example 5-10 centimeters thick. Preferably, a uniform magnetic field creates uniform absorption in the absorption region.
    • 一种用于等离子体处理的方法包括使用相对高的磁场和相对高的压力来产生邻近具有较低辐射吸收的处理室的窗口的第一等离子体区域和与具有较高辐射吸收的衬底保持器相邻的第二等离子体区域。 因此,在窗口附近产生较冷的等离子体区域,以防止污染物从窗口和相邻的室表面被蚀刻,并且在衬底附近产生较热的等离子体区域以增加处理速率。 此外,加工气体的较高压力,优选大于约10托,更优选大于约100托,增加了等离子体的密度,从而提高了加工速率。 或者,高磁场和高压产生约为厘米厚的辐射吸收区域,例如5-10厘米厚。 优选地,均匀的磁场在吸收区域中产生均匀的吸收。