会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 92. 发明申请
    • AVALANCHE PHOTODIODE
    • AVALANCHE光电
    • WO1989006443A1
    • 1989-07-13
    • PCT/US1989000023
    • 1989-01-04
    • THE UNIVERSITY OF SOUTHERN CALIFORNIA
    • THE UNIVERSITY OF SOUTHERN CALIFORNIAFORREST, Stephen, R.
    • H01L29/161
    • H01L31/1075
    • Disclosed is a semiconductor material avalanche photodiode of a separate multiplication and absorption region heterostructure design (SAM-APD). The improved SAM-APD of this invention has a plurality of floating guard rings (54), (56) and (58) which are separate about a central region (50) and doped in the opposite high concentration from that of the multiplication region (46a) in which they are positioned. These rings float in the sense that they have no contact with the metalized p-contact (52) of the photodiode and no direct contact with the current source. This structure results in an enhanced avalanche effect in the central region with limited undesirable edge breakdown.
    • 公开了一种单独的乘法和吸收区域异质结构设计(SAM-APD)的半导体材料雪崩光电二极管。 本发明的改进的SAM-APD具有多个浮动保护环(54),(56)和(58),它们围绕中心区域(50)分开,并且以与增殖区域相反的高浓度 46a),其中它们被定位。 这些环是浮动的,因为它们不与光电二极管的金属化p-触点(52)接触,并且不与电流源直接接触。 这种结构导致在中心区域中具有有限的不期望的边缘击穿的增强的雪崩效应。