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    • 10. 发明申请
    • LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE SAME
    • 发光元件,发光装置及其制造方法
    • WO2011027653A1
    • 2011-03-10
    • PCT/JP2010/063595
    • 2010-08-04
    • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.SHITAGAKI, SatokoSEO, Satoshi
    • SHITAGAKI, SatokoSEO, Satoshi
    • H05B33/12H01L51/50
    • H01L51/5012H01L51/006H01L51/0072H01L51/0081H01L51/504H01L51/5048H01L2251/552
    • Disclosed is a light-emitting element which includes a first light-emitting layer over and in contact with a hole-transport layer and a second light-emitting layer over and in contact with the first light-emitting layer. The first and the second light-emitting layers contain a bipolar host material and an emissive guest material. The guest material in the first light-emitting layer has a lower ability for capturing a hole than a guest material in the second light-emitting layer; therefore, the hole-transport property of the first light-emitting layer can be controlled to be higher than that of the second light-emitting layer. The difference in hole-transport property between the first and second light-emitting layers allows a recombination region to be widely spread in the light-emitting layers. An anti-reducing material may be provided in the hole-transport layer, which prevents the hole-transport layer from being reduced by electrons which fail to undergo recombination in the light-emitting layers.
    • 公开了一种发光元件,其包括与空穴传输层相接触并与第一发光层接触的第一发光层和与第一发光层接触的第二发光层。 第一和第二发光层包含双极主体材料和发射客体材料。 第一发光层中的客体材料比第二发光层中的客体材料具有较低的捕获孔的能力; 因此,可以将第一发光层的空穴传输特性控制为高于第二发光层的空穴传输性。 第一发光层和第二发光层之间的空穴传输特性的差异允许复合区域在发光层中广泛扩散。 可以在空穴传输层中提供防还原材料,防止空穴传输层被发光层中不能再次发生复合的电子而被还原。