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1. 发明申请

WO2015140731A1 DEPOSITION PROCESS BASED ON STENCIL MASK AND APPLICATION TO THE FABRICATION OF TAGS SUPPORTING MULTI-FUNCTIONAL TRACEABLE CODES 审中-公开
标题翻译：基于横断面掩蔽的沉积过程及其应用于支持多功能可追踪码的标签的制作
公开(公告)号：WO2015140731A1
公开(公告)日：2015-09-24
申请号：PCT/IB2015/051983
申请日：2015-03-18
申请人： 3D-OXIDES
发明人： BENVENUTI, Giacomo , WAGNER, Estelle , SANDU, Cosmin
IPC分类号： B65C9/00 , G09F3/00 , C23C16/04 , C23C16/40 , C23C16/46 , C23C16/52 , B42D25/29
CPC分类号： C23C16/042 , B42D25/41 , B42D25/415 , B65C9/00 , B65D79/00 , B81C1/00 , C23C16/40 , C23C16/46 , C23C16/52 , G09F3/00
摘要： A chemical gas phase deposition process comprises steps of providing a high vacuum chamber, and inside the high vacuum chamber: positioning a substrate surface; positioning a mask parallel to the substrate surface, whereby the mask comprises one or more openings; adjusting a gap of determined dimension between the substrate surface and the mask; and orienting a plurality of chemical precursor beams of at least one precursor species towards the mask with line of sight propagation, each of the plurality of chemical precursor beams being emitted from an independent punctual source, and molecules of the chemical precursor pass through the one or more mask openings to impinge onto the substrate surface for deposition thereon. At least a part of the chemical precursor molecules decompose on the substrate surface at a decomposition temperature. The process further comprises adjusting a temperature of the substrate surface greater or equal to the chemical precursor molecule decomposition temperature, thereby remaining greater than a mask temperature, and maintaining the mask temperature below the decomposition temperature, thereby causing a decomposition of the chemical precursor and a growth of a film on the substrate surface, but not on the mask; and heating the substrate surface using a heating device.
摘要翻译：化学气相沉积工艺包括提供高真空室和高真空室内的步骤：定位衬底表面; 将掩模定位为平行于衬底表面，由此掩模包括一个或多个开口; 调整所述基板表面和所述掩模之间确定尺寸的间隙; 并且将至少一种前体物质的多个化学前体光束定向于具有视线传播的掩模，所述多个化学前体光束中的每一个从独立的准时源发射，并且化学前体的分子通过所述一个或更多的掩模开口撞击到衬底表面上用于在其上沉积。化学前体分子的至少一部分在分解温度下在基材表面上分解。该方法还包括调节基板表面的温度大于或等于化学前体分子分解温度，从而保持大于掩模温度，并且将掩模温度保持在分解温度以下，从而导致化学前体的分解和在基材表面上生长膜，而不是在掩模上生长; 并使用加热装置加热基板表面。

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