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1. 发明公开

US20230345747A1 FLEXIBLE SUBSTRATE 审中-公开
公开(公告)号：US20230345747A1
公开(公告)日：2023-10-26
申请号：US18300537
申请日：2023-04-14
申请人： Japan Display Inc.
发明人： Takumi SANO
IPC分类号： H10K39/38
CPC分类号： H10K39/38 , H10K39/401
摘要： According to one embodiment, a flexible substrate including an insulating base including a plurality of first strip portions, a plurality of second strip portions, and a plurality of island-shaped portions located at the intersections of the first strip portions and the second strip portions, a plurality of electric elements each including a lower electrode, an upper electrode, and an active layer located between the lower electrode and the upper electrode, and overlapping with the island-shaped portions, and a first stress relaxation layer located between the lower electrode and the active layer, wherein the first stress relaxation layer is formed of a conductive resin material.

2. 发明公开

US20240334720A1 FLEXIBLE DISPLAY MODULE AND DISPLAY TERMINAL 审中-公开
公开(公告)号：US20240334720A1
公开(公告)日：2024-10-03
申请号：US17595948
申请日：2021-09-24
申请人： WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
发明人： Li HU
IPC分类号： H10K39/38 , H01L25/16 , H10K39/34 , H10K59/131 , H10K102/00
CPC分类号： H10K39/38 , H10K39/34 , H10K59/131 , H01L25/167 , H10K2102/311
摘要： A flexible display module and a display terminal are provided. The flexible display module includes a plurality of island-shaped structures, a plurality of electrical connection structures, and a plurality of photosensitive structures. Two adjacent island-shaped structures are stretched and connected by the plurality of electrical connection structures. Each of the photosensitive structures is disposed between two adjacent island-shaped structures. The photosensitive structures are disposed on a side of the island-shaped structures away from a light-emitting direction of the flexible display module.

3. 发明公开

US20240107786A1 SOLID-STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20240107786A1
公开(公告)日：2024-03-28
申请号：US18256289
申请日：2021-12-07
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： KATSUHISA KUGIMIYA
IPC分类号： H10K39/32 , H10K39/00 , H10K39/38
CPC分类号： H10K39/32 , H10K39/38 , H10K39/601
摘要： A solid-state imaging element (1) according to the present disclosure includes a pixel array unit (10) in which a plurality of light receiving pixels (11) is two-dimensionally arranged. Each of the light receiving pixels (11) includes an organic photoelectric conversion unit (61) and another photoelectric conversion unit. The organic photoelectric conversion unit (61) includes a photoelectric conversion layer (63) made of an organic semiconductor material, a first electrode (62) located on a light incident side of the photoelectric conversion layer (63), and a second electrode (65) located on a side opposite to the light incident side of the photoelectric conversion layer (63). The other photoelectric conversion unit is located on a side opposite to the light incident side of the organic photoelectric conversion unit (61), and performs photoelectric conversion in a wavelength region different from a wavelength region of the organic photoelectric conversion unit (61). The second electrode (65) is connected to a connection wiring (51) including a metal wiring (54) made of metal and a transparent wiring (53) made of a transparent conductive film. The metal wiring (54) extends in a horizontal direction from a peripheral portion of the light receiving pixel (11) to a peripheral portion of the pixel array unit (10).

4. 发明公开

US20230337445A1 PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE 审中-公开
公开(公告)号：US20230337445A1
公开(公告)日：2023-10-19
申请号：US18044580
申请日：2021-08-19
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： OSAMU ENOKI
IPC分类号： H10K39/32 , H10K30/85 , H10K39/38 , H10K30/20 , H10K30/86 , H10K30/30 , H10K85/60
CPC分类号： H10K39/32 , H10K30/85 , H10K39/38 , H10K30/20 , H10K30/86 , H10K30/353 , H10K85/6572 , H10K2101/30
摘要： A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; an organic photoelectric conversion layer provided between the first electrode and second electrode; and a buffer layer provided between the first electrode and the organic photoelectric conversion layer, and including a mellitic acid derivative represented by the general formula (1).

5. 发明公开

US20230276641A1 PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE 审中-公开
公开(公告)号：US20230276641A1
公开(公告)日：2023-08-31
申请号：US18006569
申请日：2021-07-16
申请人： SONY GROUP CORPORATION
发明人： AYUMI KAI , YOSUKE SAITO
IPC分类号： H10K39/32 , H10K85/20 , H10K39/38 , H10K39/00 , H10K30/20 , H10K30/85 , H10K30/86
CPC分类号： H10K39/32 , H10K85/211 , H10K39/38 , H10K39/601 , H10K30/211 , H10K30/85 , H10K30/86 , H10K2101/30
摘要： A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material. The second organic semiconductor material has a Highest Occupied Molecular Orbital (HOMO) level being deeper than a Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and having a difference of 1.0 eV or more and 2.0 eV or less from the LUMO level of the first organic semiconductor material. The third organic semiconductor material has a crystalline property and has a linear absorption coefficient of 10000 cm−1 or less in a visible light region and an optical absorption edge wavelength of 550 nm or less.

6. 发明公开

US20240324261A1 DETECTION SUBSTRATE AND DETECTION APPARATUS 审中-公开
公开(公告)号：US20240324261A1
公开(公告)日：2024-09-26
申请号：US18579886
申请日：2022-07-27
申请人： Beijing BOE Sensor Technology Co., Ltd. , BOE Technology Group Co., Ltd.
发明人： Shoujin CAI , Cheng LI , Jie ZHANG , Junyu WU , Yajie FENG , Jin CHENG , Dexi KONG , Shuai XU , Chuncheng CHE , Yingzi WANG
IPC分类号： H10K39/38 , H10K39/32
CPC分类号： H10K39/38 , H10K39/32
摘要： Provided in the present disclosure are a detection substrate and a detection apparatus. The detection substrate includes: a base substrate; a plurality of pixel driving circuits, which are located on the base substrate; a first insulating layer, which is located on the side, which faces away from the base substrate, of a layer where the pixel driving circuits are located, where the first insulating layer includes a plurality of first through holes; and a plurality of photosensitive devices, which are located on the side of the first insulating layer that faces away from the layer where the pixel driving circuits are located.

7. 发明公开

US20240306407A1 IMAGING DEVICE 审中-公开
公开(公告)号：US20240306407A1
公开(公告)日：2024-09-12
申请号：US18661367
申请日：2024-05-10
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： SOGO OTA , YOSHIHIRO SATO
IPC分类号： H10K39/32 , H10K39/38
CPC分类号： H10K39/32 , H10K39/38
摘要： An imaging device includes pixels and pixel electrodes. Each of the pixels includes a semiconductor substrate, a photoelectric conversion layer, and a corresponding pixel electrode out of the pixel electrodes. The photoelectric conversion layer converts light into electric charges. The corresponding pixel electrode collects the electric charges. A pitch of the pixel electrodes is greater than a pitch of the pixels.

8. 发明公开

US20240032316A1 ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20240032316A1
公开(公告)日：2024-01-25
申请号：US18256084
申请日：2021-12-08
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： HITOSHI TSUNO , HIDEAKI TOGASHI , TOMOHIRO OHKUBO , MASAYUKI KURITA , SYUTO TAMURA , NOBUHIRO KAWAI , TOMOKI HIRAMATSU , MASAHIRO JOEI , KENICHI MURATA , HIDEKI TSUJIAI , TETSURO TAKADA
IPC分类号： H10K39/38
CPC分类号： H10K39/38 , H10K39/32
摘要： Light reduction in a wiring part connected to an optical device of an electronic device including the optical device is prevented. The electronic device includes an insulating layer, an interlayer connection wiring, and an upper layer wiring. The insulating layer is disposed adjacent to the lower layer wiring and includes a through hole. The interlayer connection wiring is a transparent wiring that is connected to the lower layer wiring in the through hole and is formed into a shape extending to a surface side of the insulating layer. The upper layer wiring is a transparent wiring that is stacked and connected to the interlayer connection wiring extending to the surface side of the insulating layer.

9. 发明公开

US20230320111A1 DISPLAY DEVICE 审中-公开
公开(公告)号：US20230320111A1
公开(公告)日：2023-10-05
申请号：US18176447
申请日：2023-02-28
申请人： SAMSUNG DISPLAY CO, LTD.
发明人： DAE-YOUNG LEE , SANGWOO KIM , HYEONSIK KIM
IPC分类号： H10K39/38 , G09G3/3233 , G06V40/13 , H10K59/131 , H10K59/121 , H10K39/34
CPC分类号： H10K39/38 , G09G3/3233 , G06V40/1318 , H10K59/131 , H10K59/1213 , H10K39/34 , G09G2310/0202 , G09G2360/14 , G09G2300/0452 , G09G2300/0819 , G09G2300/0842 , G09G2330/021 , G09G2300/0408 , H10K59/352
摘要： A display device includes a first pixel that includes a first pixel driving circuit and a first light emitting element, a second pixel that includes a second pixel driving circuit and a second light emitting element, a sensor that includes a sensor driving circuit and a light detection element, a first data line that extends in a first direction and is electrically connected to the first pixel, a second data line that extends in the first direction and is electrically connected to the second pixel, and a readout line that extends in the first direction and is electrically connected to the sensor. The readout line is disposed on a different layer from at least one of the first data line and the second data line.

10. 发明公开

US20240315060A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGE SENSOR INCLUDING THE SAME 审中-公开
公开(公告)号：US20240315060A1
公开(公告)日：2024-09-19
申请号：US18593261
申请日：2024-03-01
申请人： Samsung Electronics Co., Ltd.
发明人： Byeongeun KWAK , Joon Hak OH , Kiryong LEE , Sang Hyuk LEE , Moon-Ki JEONG , Seungwon KIM , Songse YI , Yeseul LEE , Joowon LEE
IPC分类号： H10K30/20 , H10K30/85 , H10K30/86 , H10K30/87 , H10K39/32 , H10K39/38 , H10K85/10 , H10K85/20 , H10K85/30 , H10K85/60 , H10K101/30 , H10K101/40
CPC分类号： H10K30/20 , H10K30/85 , H10K30/86 , H10K30/87 , H10K39/32 , H10K39/38 , H10K85/113 , H10K85/215 , H10K85/331 , H10K85/381 , H10K85/655 , H10K85/6572 , H10K85/6576 , H10K2101/30 , H10K2101/40
摘要： A photoelectric conversion device according to some example embodiments includes an upper electrode, a lower electrode, and an active layer including a donor material, an acceptor material, and a light-absorbing material and disposed between the upper electrode and the lower electrode, wherein the donor material includes a compound represented by Formula 1, and the light-absorbing material includes bis-(4-dimethylaminodithiobenzyl)-Ni(II) (BDN).

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