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    • 3. 发明公开
    • A PROCESS OF FORMING AN ELECTRODE INTERCONNECTION IN AN INTEGRATED MULTILAYER THIN-FILM ELECTRONIC DEVICE
    • US20240138248A1
    • 2024-04-25
    • US18548047
    • 2022-03-01
    • Commonwealth Scientific and Industrial Research Organisation
    • Doojin VAKRegine CHANTLERHasitha WEERASINGHE
    • H10K71/60H10K39/18
    • H10K71/60H10K39/18
    • A process of forming an electrode interconnection between at least two adjacent unit devices in an integrated multilayer thin-film electronic device comprising: providing an intermediary device that comprises: a first electrode layer on a thin film substrate comprising a first patterned coating that includes at least two spaced apart first electrode sections of adjacent unit devices; a first functional layer comprising a substantially continuous coating over the first electrode layer; and a second functional layer comprising a second patterned coating on the first functional layer comprising at least two spaced apart functional sections, each functional section positioned on the first functional layer to overlay a portion of one of the first electrode sections so to define a gap portion between adjacent functional sections that includes a portion of that first electrode section and the first functional layer; and applying a second electrode layer over the second functional layer as a third patterned coating that includes at least two spaced apart second electrode sections of adjacent unit devices, each second electrode section being positioned to overlay at least one functional section of the second functional layer and a portion of an adjoining gap portion that includes at least one portion of the first electrode section of an adjacent unit device, the third patterned coating being formed using a solution including a conductive species and at least a first solvent, wherein the first functional layer is soluble in the first solvent and the second functional layer has a low to zero solubility in the first solvent, such that application of the second electrode layer to the gap portion forms at least one electrically conductive path through the first functional layer between the first electrode and the second electrode of adjacent unit devices.
    • 8. 发明公开
    • A PROCESS OF FORMING AN ELECTRODE INTERCONNECTION IN AN INTEGRATED MULTILAYER THIN-FILM ELECTRONIC DEVICE
    • US20240237504A9
    • 2024-07-11
    • US18548047
    • 2022-03-01
    • Commonwealth Scientific and Industrial Research Organisation
    • Doojin VAKRegine CHANTLERHasitha WEERASINGHE
    • H10K71/60H10K39/18
    • H10K71/60H10K39/18
    • A process of forming an electrode interconnection between at least two adjacent unit devices in an integrated multilayer thin-film electronic device comprising: providing an intermediary device that comprises: a first electrode layer on a thin film substrate comprising a first patterned coating that includes at least two spaced apart first electrode sections of adjacent unit devices; a first functional layer comprising a substantially continuous coating over the first electrode layer; and a second functional layer comprising a second patterned coating on the first functional layer comprising at least two spaced apart functional sections, each functional section positioned on the first functional layer to overlay a portion of one of the first electrode sections so to define a gap portion between adjacent functional sections that includes a portion of that first electrode section and the first functional layer; and applying a second electrode layer over the second functional layer as a third patterned coating that includes at least two spaced apart second electrode sections of adjacent unit devices, each second electrode section being positioned to overlay at least one functional section of the second functional layer and a portion of an adjoining gap portion that includes at least one portion of the first electrode section of an adjacent unit device, the third patterned coating being formed using a solution including a conductive species and at least a first solvent, wherein the first functional layer is soluble in the first solvent and the second functional layer has a low to zero solubility in the first solvent, such that application of the second electrode layer to the gap portion forms at least one electrically conductive path through the first functional layer between the first electrode and the second electrode of adjacent unit devices.