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1. 发明公开

US20240375940A1 RESONANCE DEVICE AND RESONANCE DEVICE MANUFACTURING METHOD 审中-公开
公开(公告)号：US20240375940A1
公开(公告)日：2024-11-14
申请号：US18780926
申请日：2024-07-23
申请人： Murata Manufacturing Co., Ltd.
发明人： Masakazu FUKUMITSU
IPC分类号： B81B7/00 , B81C1/00 , H03H9/15
CPC分类号： B81B7/0038 , B81C1/00285 , H03H9/15 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81C2201/0176 , B81C2201/019 , H03H2009/155
摘要： A resonance device that includes: a first substrate which includes a first silicon substrate and a resonator; a second substrate arranged on a side of the resonator opposite to the first silicon substrate; and a bonding portion bonding the first substrate and the second substrate to each other so as to seal a vibration space of the resonator. The resonator has a silicon film on a surface thereof facing the first silicon substrate. The silicon film is directly bonded to the first silicon substrate in an entire circumferential region surrounding the vibration space in a plan view of the first substrate.

2. 发明授权

US11984869B2 Acoustic wave device 有权
公开(公告)号：US11984869B2
公开(公告)日：2024-05-14
申请号：US17223061
申请日：2021-04-06
申请人： Murata Manufacturing Co., Ltd.
发明人： Hideki Iwamoto , Takashi Yamane , Yasumasa Taniguchi , Katsuya Daimon
IPC分类号： H03H9/02 , H03H9/145 , H03H9/15 , H10N30/87
CPC分类号： H03H9/02574 , H03H9/14502 , H03H9/15 , H10N30/87
摘要： An acoustic wave device includes a piezoelectric body including first and second main surfaces facing each other, an IDT electrode provided on the first main surface of the piezoelectric body and including electrode fingers, a high acoustic velocity member on the second main surface side of the piezoelectric body, in which an acoustic velocity of a propagating bulk wave is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric body, and a first dielectric film provided on an upper surface of the electrode fingers, in which a portion where a dielectric is not present is provided between the electrode fingers of the IDT electrode.

3. 发明授权

US11677379B2 Microelectromechanical resonator 有权
公开(公告)号：US11677379B2
公开(公告)日：2023-06-13
申请号：US17544120
申请日：2021-12-07
申请人： SiTime Coporation
发明人： Joseph C. Doll , Nicholas Miller , Charles I. Grosjean , Paul M. Hagelin , Ginel C. Hill
IPC分类号： H03H9/125 , H03H3/007 , H03H9/02 , H03H9/10 , H03H9/24 , H03H9/17 , H03H3/02 , H03H9/15
CPC分类号： H03H9/125 , H03H3/0077 , H03H9/02259 , H03H9/02401 , H03H9/02448 , H03H9/1057 , H03H9/17 , H03H9/2463 , H03H2003/027 , H03H2009/02181 , H03H2009/02307 , H03H2009/155
摘要： A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

4. 发明授权

US11646714B2 Laterally vibrating bulk acoustic wave resonator 有权
公开(公告)号：US11646714B2
公开(公告)日：2023-05-09
申请号：US16505669
申请日：2019-07-08
申请人： Texas Instruments Incorporated
发明人： Jeronimo Segovia Fernandez , Peter Smeys , Ting-Ta Yen
IPC分类号： H03H9/17 , H03H9/64 , H03H9/02 , H03H9/15 , H03H9/05
CPC分类号： H03H9/175 , H03H9/02275 , H03H9/0542 , H03H9/64 , H03H2009/02299 , H03H2009/155
摘要： A laterally vibrating bulk acoustic wave (LVBAW) resonator includes a piezoelectric plate sandwiched between first and second metal layers. The second metal layer is patterned into an interdigital transducer (IDT) with comb-shaped electrodes having interlocking fingers. The width and pitch of the fingers of the electrodes determine the resonant frequency. A combined thickness of the first and second metal layers and the piezoelectric layer is less than the pitch of the interlocking fingers.

5. 发明申请

US20230115592A1 BULK ACOUSTIC WAVE DEVICE PACKAGING WITH REDISTRIBUTION USING SILICON DIOXIDE INSULATION 有权
公开(公告)号：US20230115592A1
公开(公告)日：2023-04-13
申请号：US17938114
申请日：2022-10-05
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Atsushi Takano , Mitsuhiro Furukawa , Yusuke Horiguchi
IPC分类号： H03H9/02 , H03H3/007 , H03H9/24 , H03H9/15
摘要： An electronic device package comprises an electrical device disposed on a base substrate, a conductive column in electrical communication with the electrical device and having a first end bonded to the base substrate, a cap substrate disposed over the electrical device and bonded to a second end of the conductive column, a layer of dielectric material disposed on the lower surface of the base substrate, a through substrate via in electrical communication with the conductive column and passing through the base substrate and the layer of dielectric material, a redistribution layer disposed on the layer of dielectric material, and a contact pad formed on the redistribution layer and in electrical communication with the through substrate via through the redistribution layer, the contact pad being horizontally displaced from a position directly below the through substrate via.

6. 发明授权

US11581871B1 Nonlinear acoustic medium 有权
公开(公告)号：US11581871B1
公开(公告)日：2023-02-14
申请号：US16269499
申请日：2019-02-06
申请人： FemtoDx, Inc.
发明人： Pritiraj Mohanty
IPC分类号： H03H9/54 , H03H9/52 , H03H9/24 , H03B19/00 , H03H9/02 , H03H9/00 , H03H9/15
摘要： Nonlinear acoustic media and related methods are described herein. The nonlinear acoustic media are configured to generate higher harmonic output signals from a single-frequency input signal. The higher harmonic output signals can be generated through the coupling of an acoustic dielectric medium to a nonlinear piezoelectric medium having four ports.

7. 发明申请

US20230006129A1 TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH REDUCED SUBSTRATE TO CONTACT BUMP THERMAL RESISTANCE 有权
公开(公告)号：US20230006129A1
公开(公告)日：2023-01-05
申请号：US17507550
申请日：2021-10-21
申请人： Resonant Inc.
发明人： Albert Cardona , Chris O'Brien , Greg Dyer
IPC分类号： H01L41/29 , H03H9/02 , H03H9/54 , H03H9/15 , H01L41/09 , H01L41/27
摘要： An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm, the overlapping distance of the interleaved fingers defining an aperture of the resonator device. Contact pads are formed at selected locations over the surface of the substrate to provide electrical connections between the IDT and contact bumps to be attached to the contact pads. The piezoelectric plate is removed from at least a portion of the surface area of the device beneath each of the contact pads to provide lower thermal resistance between the contact bumps and the substrate.

8. 发明授权

US11509277B2 Piezoelectric single crystal silicon carbide microelectromechanical resonators 有权
公开(公告)号：US11509277B2
公开(公告)日：2022-11-22
申请号：US16368802
申请日：2019-03-28
申请人： HRL Laboratories, LLC
发明人： Raviv Perahia , Logan D. Sorenson , Lian X. Huang , Jeremy Bregman
IPC分类号： H03H3/02 , H03H9/205 , H03H9/02 , H03H9/05 , H03H9/13 , H03H9/17 , H03H9/15
摘要： A resonator has a resonator body and a frame at least partially surrounding the resonator body, the resonator body being coupled to the frame by at least one tether. The resonator body, frame and at least one tether comprise silicon carbide. A plurality of interdigitated electrodes are disposed on the silicon carbide resonator body. The resonator body preferably comprises 6H silicon carbide and preferably has a crystalline c-axis oriented generally parallel to a thickness direction of the resonator body.

9. 发明申请

US20220360248A1 BULK ACOUSTIC WAVE FILTER AND MANUFACTURING METHOD THEREOF, COMMUNICATION DEVICE 有权
公开(公告)号：US20220360248A1
公开(公告)日：2022-11-10
申请号：US17874959
申请日：2022-07-27
申请人： Newsonic Technologies
发明人： Jian WANG
IPC分类号： H03H9/13 , H03H9/15 , H03H9/05 , H03H9/02
摘要： A bulk acoustic wave filter, a manufacturing method thereof, and a communication device are disclosed. The bulk acoustic wave filter includes a first filter substrate and a second filter substrate; the first filter substrate includes a first base substrate and a first resonator, a first electrode pad and a first auxiliary pad arranged on the first base substrate; the second filter substrate includes a second base substrate and a second resonator, a second electrode pad and a second auxiliary pad arranged on the second base substrate, the first filter substrate is arranged opposite to the second filter substrate, the first electrode pad and the second auxiliary pad are in contact with each other, and the second electrode pad and the first auxiliary pad are in contact with each other.

10. 发明申请

US20220286106A1 ELECTROACOUSTIC RESONATOR 有权
公开(公告)号：US20220286106A1
公开(公告)日：2022-09-08
申请号：US17597467
申请日：2020-07-14
申请人： RF360 EUROPE GMBH
发明人： Matthias PERNPEINTNER
IPC分类号： H03H9/02 , H03H9/15 , H03H9/25
摘要： An electroacoustic resonator comprises a substrate (3) with a piezoelectric material and an interdigital electrode structure on a top side (33) of the substrate. The electrode structure comprises a first electrode (1) and a second electrode (2) each with a busbar (20) and a plurality of fingers (10). The fingers of both electrodes interdigitate. The region of the top side between the two busbars is subdivided into two barrier regions (113), two trap regions (112) and one track region (111), the trap regions being located between the two barrier regions and the track region being located between the two trap regions. At least some fingers each comprise one barrier portion (13), two trap portions (12) and one track portion (11), wherein the barrier portion is associated with the barrier region closest to the busbar assigned to the finger, the trap portions are each associated with one of the trap regions and the track portion is associated with the track region. The fingers are configured such that the velocity of a main mode of surface acoustic waves is smaller in the trap regions than in the track region. Each electrode comprises a plurality of stub fingers (30) being shorter than the fingers. Each stub finger is associated only with the barrier region closest to the busbar assigned to the stub finger. The electrodes are configured such that a velocity of the main mode in the barrier regions is greater than in the track region.

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