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1. 发明授权

US10192710B2 Ion milling apparatus and ion milling method 有权
公开(公告)号：US10192710B2
公开(公告)日：2019-01-29
申请号：US15574873
申请日：2015-05-25
申请人： Hitachi High-Technologies Corporation
发明人： Yuki Tani , Hisayuki Takasu , Shuichi Takeuchi
IPC分类号： H01J37/305 , H01J37/08 , H01J27/04 , H01J37/30 , H01J37/24 , H01J37/302
摘要： An object of the present invention is to provide an ion milling apparatus capable of processing deposits attached to an ion gun and an ion milling method capable of processing deposits attached to an ion gun. The ion milling apparatus includes gas injection means for injecting a gas toward the ion gun, and the gas injection means included in the ion milling apparatus moves the deposits attached to the ion gun by injecting the gas toward the inside of the ion gun.

2. 发明申请

US20180306175A1 MAGNETIC FOCUSING IN AN ION PUMP USING INTERNAL FERROUS MATERIALS 审中-公开
公开(公告)号：US20180306175A1
公开(公告)日：2018-10-25
申请号：US15496684
申请日：2017-04-25
申请人： Edwards Vacuum LLC
发明人： Anthony Wynohrad , Joel Langeberg
IPC分类号： F04B37/04 , F04B37/14 , H01J27/02 , H01J37/08 , H01J27/04
CPC分类号： F04B37/04 , F04B37/14 , H01J27/024 , H01J27/04 , H01J37/08
摘要： An ion pump has an exterior magnet and a chamber wall defining an interior. The interior contains an anode having an exterior surface extending around an axis and defining an opening wherein the axis passes through the opening and a post made of ferrous material, aligned with the axis of the anode and positioned between the exterior magnet and the anode.

3. 发明申请

US20180130630A1 Ion Milling Apparatus and Ion Milling Method 审中-公开
公开(公告)号：US20180130630A1
公开(公告)日：2018-05-10
申请号：US15574873
申请日：2015-05-25
申请人： Hitachi High-Technologies Corporation
发明人： Yuki TANI , Hisayuki TAKASU , Shuichi TAKEUCHI
IPC分类号： H01J27/04 , H01J37/302 , H01J37/08 , H01J37/24 , H01J37/305
CPC分类号： H01J27/04 , H01J37/08 , H01J37/243 , H01J37/30 , H01J37/302 , H01J37/305 , H01J2237/08
摘要： An object of the present invention is to provide an ion milling apparatus capable of processing deposits attached to an ion gun and an ion milling method capable of processing deposits attached to an ion gun. The ion milling apparatus includes gas injection means for injecting a gas toward the ion gun, and the gas injection means included in the ion milling apparatus moves the deposits attached to the ion gun by injecting the gas toward the inside of the ion gun.

4. 发明授权

US5977552A Boron ion sources for ion implantation apparatus 失效
标题翻译：用于离子注入装置的硼离子源
公开(公告)号：US5977552A
公开(公告)日：1999-11-02
申请号：US990323
申请日：1997-12-11
申请人： Majeed A. Foad
发明人： Majeed A. Foad
IPC分类号： H01J27/04 , H01J37/317 , H01J37/08
CPC分类号： H01J27/04 , H01J2237/31701
摘要： In an efficient ion source BF.sub.3 gas is first passed over solid boron heated in an oven to at least 1100.degree. C. to reduce the BF.sub.3 to BF molecules. It is also proposed to use solid boron as feed stock by heating this in an oven to at least 1800.degree. C. to produce boron vapour. Either a reactive gas such as fluorine or an inert gas such as Argon is also introduced into the arc chamber to react with or sputter off boron condensing on the arc chamber walls.
摘要翻译：在有效的离子源中，BF 3气体首先通过在烘箱中加热至1100℃以上的固体硼，以将BF 3还原成BF分子。还提出使用固体硼作为原料，通过在烘箱中将其加热到至少1800℃以产生硼蒸气。诸如氟或惰性气体如氩气的反应性气体也被引入电弧室中以与在电弧室壁上凝结的硼反应或溅射掉。

5. 发明授权

US5896012A Metal ion plasma generator having magnetic field forming device located such that a triggering is between the magnetic field forming device and an anode 失效
标题翻译：具有磁场形成装置的金属离子等离子体发生器，其定位成使得在磁场形成装置和阳极之间触发
公开(公告)号：US5896012A
公开(公告)日：1999-04-20
申请号：US908985
申请日：1997-08-08
申请人： Jun Munemasa , Alexander Elkind , James R Treglio
发明人： Jun Munemasa , Alexander Elkind , James R Treglio
IPC分类号： C23C14/24 , C23C14/32 , H01J27/04 , H01J37/32 , H05B31/026 , H01J7/24
CPC分类号： H01J37/32055 , C23C14/325 , H01J27/04 , H01J37/3266
摘要： When a trigger discharge between a metal cathode and a trigger ring induces a vacuum-arc discharge between the cathode an anode, which vaporizes the substances of the cathode surface to produce a metal ion plasma, setting the pulse length of the arc pulse applied between the cathode and the anode to 1 msec or longer will soon short-circuit between the cathode and the trigger ring due to the vaporized substances deposited on the surface of the insulating ring. In order to solve this problem, a permanent magnet 36 for forming a magnetic field across a space between the anode 26 and the cathode 34 is provided close to the rear side of the trigger ring 35 so as to guide the substances vaporized from the cathode 34 toward the anode 26. Thereby, a longer continuous operation can be done with setting the arc pulse longer. moreover, since the permanent magnet 36 is provided at the foregoing position, the magnet does not receive a thermal load by the vacuum-arc discharge, which maintains a stable operation and makes the total construction compact.
摘要翻译：当金属阴极和触发环之间的触发放电在阴极和阴极表面的物质蒸发以产生金属离子等离子体的阴极之间引起真空电弧放电时，设置施加在金属阴极和触发环之间的电弧脉冲的脉冲长度阴极和阳极至1毫秒或更长时间将由于沉积在绝缘环表面上的汽化物质而在阴极和触发环之间短路。为了解决这个问题，在触发环35的后侧附近设置用于在阳极26和阴极34之间的空间形成磁场的永磁体36，以引导从阴极34蒸发的物质从而可以通过更长时间地设置电弧脉冲来进行更长的连续操作。此外，由于永久磁铁36设置在上述位置，所以磁体不会受到真空电弧放电的热负荷的影响，从而保持了稳定的动作，使总体结构紧凑。

6. 发明授权

US5600136A Single potential ion source 失效
标题翻译：单电位离子源
公开(公告)号：US5600136A
公开(公告)日：1997-02-04
申请号：US474593
申请日：1995-06-07
申请人： Marsbed Hablanian , Asoka Ratnam
发明人： Marsbed Hablanian , Asoka Ratnam
IPC分类号： H01J27/02 , H01J27/04 , H01J37/08 , H01J49/10 , H01J49/16 , B01D59/44 , H01J27/00 , H01J49/00
CPC分类号： H01J27/04 , H01J49/16
摘要： A single potential ion source includes a single conical electrode encircled by a cylindrical magnet. At least one filament is placed proximate to the electrode. This arrangement serves to accelerate electrons created by energy from the filament toward a center axis of the conical electrode. The electrons collide with gas particles to create a focused ion stream. The stream may be directed into a magnetic field in a mass spectrometer tube.
摘要翻译：单个电位离子源包括由圆柱形磁体包围的单个圆锥形电极。至少一根细丝放置在电极附近。这种布置用于加速从细丝向锥形电极的中心轴产生的能量。电子与气体颗粒碰撞以产生聚焦离子流。流可以被引导到质谱管中的磁场中。

7. 发明授权

US5498290A Confinement of secondary electrons in plasma ion processing 失效
标题翻译：等离子体离子处理中二次电子的限制
公开(公告)号：US5498290A
公开(公告)日：1996-03-12
申请号：US113552
申请日：1993-08-27
申请人： Jesse N. Matossian , John D. Williams
发明人： Jesse N. Matossian , John D. Williams
IPC分类号： C23C14/48 , H01J27/04 , H01J37/08 , H01J37/317 , H01J37/32 , H01L21/265 , C23C16/00
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/3233 , H01J2237/026
摘要： A plasma ion implantation apparatus includes a vacuum chamber that receives the object within its walls. The object is supported upon an electrically conductive base that is electrically isolated from the wall of the vacuum chamber. An electrically conductive enclosure is positioned between the object and the wall of the vacuum chamber and supported upon the base. The enclosure is made of an electrically conductive material. A plasma source is positioned so as to create a plasma in the vicinity of the object to be implanted. A voltage source applies an electrical voltage to the base and thence the enclosure relative to the wall of the vacuum chamber. Secondary electrons emitted from the object during implantation are reflected back into the plasma by the enclosure, reducing X-ray production and improving plasma efficiency.
摘要翻译：等离子体离子注入装置包括在其壁内接收物体的真空室。该物体被支撑在与真空室的壁电绝缘的导电基底上。导电外壳位于物体和真空室的壁之间，并被支撑在基座上。外壳由导电材料制成。等离子体源被定位成在待植入物体附近产生等离子体。电压源将电压施加到基座，并且从而将外壳相对于真空室的壁施加电压。在植入期间从物体发射的二次电子被外壳反射回等离子体，减少X射线产生并提高等离子体效率。

8. 发明授权

US4344019A Penning discharge ion source with self-cleaning aperture 失效
标题翻译： Penning放电离子源具有自清洁孔径
公开(公告)号：US4344019A
公开(公告)日：1982-08-10
申请号：US205398
申请日：1980-11-10
申请人： Basil F. Gavin , Robert A. MacGill , Raymond K. Thatcher
发明人： Basil F. Gavin , Robert A. MacGill , Raymond K. Thatcher
IPC分类号： H01J27/04
CPC分类号： H01J27/04
摘要： An ion source of the Penning discharge type having a self-cleaning aperture is provided by a second dynode (24) with an exit aperture (12) in a position opposite a first dynode 10a, from which the ions are sputtered, two opposing cathodes (14, 16), each with an anode (18, 20) for accelerating electrons emitted from the cathodes into a cylindrical space defined by the first and second dynode. A support gas maintained in this space is ionized by the electrons. While the cathodes are supplied with a negative pulse to emit electrons, the first dynode is supplied with a negative pulse (e.g., -300 V) to attract atoms of the ionized gas (plasma). At the same time, the second dynode may also be supplied with a small voltage that is negative with respect to the plasma (e.g., -5 V) for tuning the position of the plasma miniscus for optimum extraction geometry. When the negative pulse to the first dynode is terminated, the second dynode is driven strongly negative (e.g., -600 V) thereby allowing heavy sputtering to take place for a short period to remove virtually all of the atoms deposited on the second dynode from material sputtered off the first dynode. An extractor (22) immediately outside the exit aperture of the second dynode is maintained at ground potential during this entire period of sputtering while the anode, dynode and cathode reference voltage is driven strongly positive (about +20 kV to +30 kV) so that ions accelerated through the aperture will be at ground potential. In that manner, material from the first dynode deposited on the second dynode will be sputtered, in time, to add to the ion beam. Atoms sputtered from the second dynode which do not become ionized and exit through the slit will be redeposited on the first dynode, and hence recycled for further ion beam generation during subsequent operating cycles.
摘要翻译：具有自清洁孔径的Penning放电型离子源由具有出口孔（12）的第二倍增电极（24）提供在与第一倍增电极10a相对的位置，离子被溅射出来，两个相对的阴极每个具有用于将从阴极发射的电子加速到由第一和第二倍增电极限定的圆柱形空间中的阳极（18,20）。保持在该空间中的支撑气体被电子电离。当阴极被提供有负脉冲以发射电子时，第一倍增电极被提供有负脉冲（例如，-300V）以吸引电离气体（等离子体）的原子。同时，也可以向第二倍增电极提供相对于等离子体为负的小电压（例如，-5V），用于调整等离子体液面的位置以获得最佳的提取几何形状。当第一倍增极的负脉冲终止时，第二倍增电极被强烈地负（例如，-600V），从而允许在很短的时间内发生重的溅射，从而从材料中去除几乎所有沉积在第二倍增极上的原子溅出第一个dynode。在整个溅射期间，紧邻第二倍增电极的出口孔外面的提取器（22）保持接地电位，而阳极，倍增极和阴极参考电压被强烈地驱动（约+ 20kV至+ 30kV），使得通过孔径加速的离子将处于地电位。以这种方式，沉积在第二倍增电极上的第一倍增电极的材料将被及时地溅射以添加到离子束。从第二倍增极溅射的不会离子化并通过狭缝出射的原子将重新沉积在第一倍增极上，因此在随后的操作循环期间再循环用于进一步的离子束产生。

9. 发明授权

US4046666A Device for providing high-intensity ion or electron beam 失效
标题翻译：用于提供高强度离子或电子束的装置
公开(公告)号：US4046666A
公开(公告)日：1977-09-06
申请号：US684418
申请日：1976-05-07
申请人： Edwin D. McClanahan , Ronald W. Moss
发明人： Edwin D. McClanahan , Ronald W. Moss
IPC分类号： C23C14/35 , H01J3/04 , H01J27/00 , H01J27/04 , H01J27/20 , H01J37/06 , H01J37/08 , H01J37/34 , C23C15/00 , H01J19/04
CPC分类号： C23C14/35 , H01J27/20 , H01J37/06 , H01J37/08 , H01J37/34
摘要： A thin film of a low-thermionic-work-function material is maintained on the cathode of a device for producing a high-current, low-pressure gas discharge by means of sputter deposition from an auxiliary electrode. The auxiliary electrode includes a surface with a low-work-function material, such as thorium, uranium, plutonium or one of the rare earth elements, facing the cathode but at a disposition and electrical potential so as to extract ions from the gas discharge and sputter the low-work-function material onto the cathode. By continuously replenishing the cathode film, high thermionic emissions and ion plasmas can be realized and maintained over extended operating periods.
摘要翻译：在用于通过辅助电极的溅射沉积产生高电流，低压气体放电的装置的阴极上保持低热离子功函数材料的薄膜。辅助电极包括具有低功函数材料的表面，例如钍，铀，钚或稀土元素之一，面对阴极，但处于位置和电势，从而从气体放电中提取离子，将低功函数材料溅射到阴极上。通过不断补充阴极膜，可以在延长的工作周期内实现和维持高热离子发射和离子等离子体。

10. 发明授权

US3955118A Cold-cathode ion source 失效
标题翻译：冷阴极离子源
公开(公告)号：US3955118A
公开(公告)日：1976-05-04
申请号：US551217
申请日：1975-02-19
申请人： John Peter Wilfred Flemming
发明人： John Peter Wilfred Flemming
IPC分类号： H01J27/04 , H01J37/08 , H01J1/30 , H01J3/04 , H01J3/40 , H01J7/24
CPC分类号： H01J27/04 , H01J37/08
摘要： A cold-cathode ion source includes a specially shaped hollow anode and specially shaped anode-cathode insulators to preclude the buildup of short-circuiting bridges of sputtered cathode material. When used with solid feed material, the source can also include an oven-anode having cavities for vaporizing the solid feed material and passages connecting the cavities to the bore of the anode. The geometry of the oven-anode provides an increasing temperature gradient from the cavities to the bore that minimizes condensation of vaporized feed material that could block the ports.
摘要翻译：冷阴极离子源包括特殊形状的中空阳极和特殊形状的阳极 - 阴极绝缘体，以排除溅射阴极材料短路桥的积聚。当与固体进料一起使用时，源还可以包括具有用于蒸发固体进料的空腔的炉阳极和将空腔连接到阳极的孔的通道。烤箱阳极的几何形状提供了从空腔到孔的增加的温度梯度，其最小化可阻塞端口的汽化进料的冷凝。

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