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    • 1. 发明授权
    • Mask data generation method, mask fabrication method, exposure method, device fabrication method, and storage medium
    • 掩模数据生成方法,掩模制造方法,曝光方法,器件制造方法和存储介质
    • US08144967B2
    • 2012-03-27
    • US12210547
    • 2008-09-15
    • Miyoko Kawashima
    • Miyoko Kawashima
    • G03F1/02
    • G03F1/36
    • The invention provides a generation method of generating data of a mask, comprising a calculation step of calculating an aerial image formed on an image plane of a projection optical system, an extraction step of extracting a two-dimensional image from the aerial image, a determination step of determining a main pattern of the mask based on the two-dimensional image, an extraction step of extracting, from the aerial image, a peak portion at which a light intensity takes a peak value in a region other than a region in which the main pattern is projected, a determination step of determining an assist pattern based on the light intensity of the peak portion, and a generation step of inserting the assist pattern into a portion of the mask, which corresponds to the peak portion, thereby generating, as the data of the mask, pattern data including the assist pattern and the main pattern.
    • 本发明提供一种生成掩模的数据的生成方法,包括计算在投影光学系统的像面上形成的空间像的计算步骤,从空中图像提取二维图像的提取步骤, 基于二维图像确定掩模的主图案的步骤,提取步骤,从空间图像中提取除了区域以外的区域中的光强度具有峰值的峰值部分, 主图案被投影,基于峰部的光强度来确定辅助图案的确定步骤以及将辅助图案插入与峰部对应的部分中的生成步骤,从而生成作为 掩模的数据,包括辅助图案和主图案的图案数据。
    • 4. 发明授权
    • Sensitized photochemical switching for cholesteric liquid crystal displays
    • 用于胆甾型液晶显示器的敏化光化学切换
    • US07563389B2
    • 2009-07-21
    • US12331827
    • 2008-12-10
    • Deepak ShuklaKrishnan Chari
    • Deepak ShuklaKrishnan Chari
    • C09K19/36C09K19/52C09K19/54C09K19/58G02F1/13G03F1/02G03F7/004
    • C09K19/586C09K19/588Y10T428/10Y10T428/1036Y10T428/1055
    • The present invention relates to photo-tunable dopant compositions comprising a photo-reactive chiral compound capable of undergoing a photochemical reaction resulting in the loss of chirality, and a triplet sensitizer. The present invention also relates to a display comprising a substrate, a liquid crystalline layer thereon, wherein the liquid crystalline layer comprises a nematic host, at least one chiral dopant, a photo-reacted compound, and a triplet sensitizer, and at least one transparent conductive layer. The present invention also relates to a method of tuning a cholesteric liquid crystal material comprising providing at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound; combining the at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound to form a mixture; and irradiating the mixture for a period of time.
    • 本发明涉及光可掺杂掺杂剂组合物,其包含能够经历导致手性丧失的光化学反应的光反应性手性化合物和三线态敏化剂。 本发明还涉及一种显示器,其包括基底,其上的液晶层,其中所述液晶层包括向列型主体,至少一种手性掺杂剂,光反应化合物和三线态敏化剂,以及至少一种透明 导电层。 本发明还涉及一种调节胆甾型液晶材料的方法,包括提供至少一种介晶化合物,至少一种三线态敏化剂和至少一种光反应性手性化合物; 组合所述至少一种介晶化合物,至少一种三线态敏化剂和至少一种光反应性手性化合物以形成混合物; 并将混合物照射一段时间。
    • 5. 发明申请
    • Contrast Enhancing Exposure System and Method For Use In Semiconductor Fabrication
    • 对比增强曝光系统和半导体制造中的使用方法
    • US20080206679A1
    • 2008-08-28
    • US11677879
    • 2007-02-22
    • George LiuVencent ChangNorman ChenKuei Shun ChenChin-Hsiang Lin
    • George LiuVencent ChangNorman ChenKuei Shun ChenChin-Hsiang Lin
    • G03F1/02
    • G03F1/144G03F1/70G03F7/0045G03F7/2022G03F7/70475
    • Contrast enhancing exposure apparatus and method for use in semiconductor fabrication are described. In one embodiment, a method for forming a pattern on a substrate, wherein the substrate includes a photoresist layer comprising photoacid generators (“PAGs”) and photobase generators (“PBGs”), is described. The method includes dividing the pattern into two component patterns; exposing the photoresist layer of the substrate to UV light through a first mask corresponding to a first one of the component patterns; subsequent to the exposing the photoresist layer of the substrate to UV light through the first mask, exposing the photoresist layer of the substrate to UV light through a second mask corresponding to a second one of the component patterns, wherein the PAGs and PBGs disposed in areas of the photoresist layer that have been exposed to UV light at least twice are activated and wherein the activated PAGs neutralize the activated PBGs in areas of the photoresist layer that have been exposed to UV light at least twice.
    • 描述了用于半导体制造的对比增强曝光装置和方法。 在一个实施例中,描述了在衬底上形成图案的方法,其中衬底包括包含光酸发生器(“PAG”)和光产生器(“PBG”)的光致抗蚀剂层。 该方法包括将图案划分成两个分量图案; 通过与第一组分图案相对应的第一掩模将衬底的光致抗蚀剂层暴露于UV光; 在将衬底的光致抗蚀剂层暴露于通过第一掩模的UV光之后,通过对应于第二组件图案的第二掩模将衬底的光致抗蚀剂层暴露于UV光,其中设置在区域中的PAG和PBG 已经暴露于UV光的光致抗蚀剂层至少两次被激活,并且其中激活的PAG在已经暴露于UV光的光致抗蚀剂层的区域中中和活化的PBG至少两次。
    • 6. 发明授权
    • Process for the production of masked positive color images by the silver
dye bleach process
    • 通过银染料漂白工艺生产掩蔽的正彩色图像的工艺
    • US4197123A
    • 1980-04-08
    • US924476
    • 1978-07-13
    • Alfred OetikerChristoph ChylewskiMax Marthaler
    • Alfred OetikerChristoph ChylewskiMax Marthaler
    • G03C7/02G03C7/28G03F1/00G03F1/02G03C7/04G03C7/16
    • G03C7/28
    • The present invention provides a new process for the production of masked subtractive positive color images by the silver dye bleach process, which comprises the steps of exposure, silver developing, dye-bleaching, silver-bleaching and fixing. The photographic material used contains, in at least two layers, one image-wise bleachable dye per layer, the absorption maximum of the dye corresponding in each case to one of the three primary colors red, green and blue and a silver halide emulsion layer sensitive in a specific spectral region being allocated to each dye, wherein this material (a) in at least one layer contains a dye, the undesired secondary color density of which is to be compensated, and a silver halide emulsion containing silver iodide is allocated to this dye, in the same layer and/or an adjacent layer, (b) in at least one further layer contains at least one further dye, the main color density of which corresponds to a secondary color density, which is to be compensated, of the first dye, and also a silver halide emulsion free from iodide ions, (c) contains a further layer which is adjacent to layer (b) and contains colloidal nuclei which are able, under reducing conditions, to deposit metallic silver from soluble silver complexes, and also contains an insensitive iodide-free silver halide emulsion which is not spectrally sensitized, and optionally a stabilizer, and (d) containing a separating layer, which does not contain any of the dyes of the layer or layers (a), between the layer or layers (a) and the layer (c). The silver developing bath with which the material is treated contains ligands which form water-soluble and diffusible silver complexes with silver.
    • 本发明提供了一种用于通过银染料漂白方法生产掩蔽的减去正彩色图像的新方法,其包括曝光,银显影,染料漂白,银漂白和定影的步骤。 使用的照相材料在至少两层中每层含有一个成像漂白染料,染料在每种情况下的吸收最大值分别为三原色之一,红色,绿色和蓝色,卤化银乳剂层敏感 在分配给每种染料的特定光谱区域中,其中至少一层中的该材料(a)含有染料,其不希望的二次色密度被补偿,并且将含有碘化银的卤化银乳剂分配给该染料 在同一层和/或相邻层中的染料,(b)在至少一个另外的层中含有至少一种另外的染料,其主要颜色密度对应于要补偿的第二颜色密度 第一染料,以及不含碘离子的卤化银乳剂,(c)含有与层(b)相邻的另一层,并含有胶体核,其能够在还原条件下从solubl沉积金属银 e银络合物,并且还含有不受光谱敏化的不含碘化物的卤化银乳剂,以及任选的稳定剂,和(d)含有不含任何层或层的染料的分离层(a ),层或层(a)和层(c)之间。 处理材料的银显影槽含有与银形成水溶性和可扩散的银络合物的配体。
    • 8. 发明授权
    • Full phase shifting mask in damascene process
    • 镶嵌过程中的全相移掩模
    • US07659042B2
    • 2010-02-09
    • US12184215
    • 2008-07-31
    • Christophe Pierrat
    • Christophe Pierrat
    • G03F1/02
    • G03F1/30G03F1/70
    • A full phase shifting mask (FPSM) can be advantageously used in a damascene process for hard-to-etch metal layers. Because the FPSM can be used with a positive photoresist, features on an original layout can be replaced with shifters on a FPSM layout. Adjacent shifters should be of opposite phase, e.g. 0 and 180 degrees. In one embodiment, a dark field trim mask can be used with the FPSM. The trim mask can include cuts that correspond to cuts on the FPSM. Cuts on the FPSM can be made to resolve phase conflicts between proximate shifters. In one case, exposing two proximate shifters on the FPSM and a corresponding cut on the trim mask can form a feature in the metal layer. The FPSM and/or the trim mask can include proximity corrections to further improve printing resolution.
    • 全相移掩模(FPSM)可有利地用于难蚀刻金属层的镶嵌工艺。 因为FPSM可以与正光致抗蚀剂一起使用,原始布局上的特征可以用FPSM布局上的移位器替代。 相邻移位器应该是相反的,例如 0和180度。 在一个实施例中,暗场修剪掩模可以与FPSM一起使用。 修剪蒙版可以包括对应于FPSM上的切割的切口。 可以对FPSM进行切割以解决相邻移位器之间的相位冲突。 在一种情况下,在FPSM上曝光两个相邻的移位器并且在修剪蒙版上相应的切割可以在金属层中形成特征。 FPSM和/或修剪掩模可以包括接近校正以进一步提高打印分辨率。