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    • 7. 发明授权
    • Image pickup apparatus and radiation image pickup apparatus
    • 图像拾取装置和放射线图像拾取装置
    • US07858947B2
    • 2010-12-28
    • US12474404
    • 2009-05-29
    • Chiori MochizukiMasakazu MorishitaKeiichi NomuraMinoru WatanabeTakamasa Ishii
    • Chiori MochizukiMasakazu MorishitaKeiichi NomuraMinoru WatanabeTakamasa Ishii
    • H01L27/146G01T1/24G01T1/26
    • H01L27/14609H01L27/14636H01L27/14676
    • To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.
    • 为了改善传感器复位方法,从而实现读取运动图像的高速率,本发明提供一种图像拾取装置和放射线图像拾取装置,包括:沿行和列方向排列在基板上的多个像素,每个 像素,具有转换元件和转印开关元件; 在行方向上与多个所述转印开关元件连接的驱动配线; 以及在行方向上连接到多个转换元件的转换元件布线,其中复位开关元件设置在转换元件布线和用于提供用于复位转换元件的复位电压的复位布线之间,偏置开关元件 设置在转换元件布线和用于提供用于操作转换元件的偏置电压的偏置布线之间。
    • 8. 发明申请
    • MINIATURIZED, LOW POWER FGMOSFET RADIATION SENSOR AND WIRELESS DOSIMETER SYSTEM
    • MINIATURIZED,低功率FGMOSFET辐射传感器和无线剂量系统
    • US20100096556A1
    • 2010-04-22
    • US12580670
    • 2009-10-16
    • Muhammad ARSALANAtif SHAMIMNicholas Garry TARRLangis ROY
    • Muhammad ARSALANAtif SHAMIMNicholas Garry TARRLangis ROY
    • G01T1/02H01L27/14G01T1/26
    • G01T1/026H01L27/14659
    • A miniaturized floating gate (FG) MOSFET radiation sensor system is disclosed, The sensor preferably comprises a matched pair of sensor and reference FGMOSFETs wherein the sensor FGMOSFET has a larger area floating gate with an extension over a field oxide layer, for accumulation of charge and increased sensitivity. Elimination of a conventional control gate and injector gate reduces capacitance, and increases sensitivity, and allows for fabrication using standard low cost CMOS technology. A sensor system may be provided with integrated signal processing electronics, for monitoring a change in differential channel current ID, indicative of radiation dose, and an integrated negative bias generator for automatic pre-charging from a low voltage power source. Optionally, the system may be coupled to a wireless transmitter. A compact wireless sensor System on Package solution is presented, suitable for dosimetry for radiotherapy or other biomedical applications.
    • 公开了一种小型浮动栅(FG)MOSFET辐射传感器系统。该传感器优选地包括一对匹配的传感器和参考FGMOSFET,其中传感器FGMOSFET具有在场氧化物层上延伸的较大面积的浮动栅极,用于积聚电荷, 灵敏度提高。 消除传统的控制栅极和注入器栅极降低了电容,并提高了灵敏度,并允许使用标准的低成本CMOS技术制造。 传感器系统可以设置有集成的信号处理电子器件,用于监测指示辐射剂量的差分通道电流ID的变化,以及用于从低压电源自动预充电的集成负偏压发生器。 可选地,系统可以耦合到无线发射机。 介绍了一种紧凑型无线传感器系统包装解决方案,适用于放射治疗或其他生物医学应用的剂量测定。
    • 9. 发明申请
    • SOLID-STATE NEUTRON AND ALPHA PARTICLES DETECTOR AND METHODS FOR MANUFACTURING AND USE THEREOF
    • 固体中子和阿尔法粒子检测器及其制造和使用方法
    • US20090302226A1
    • 2009-12-10
    • US11883842
    • 2006-02-08
    • Michael M. SchieberAssaf ZuckGad Marom
    • Michael M. SchieberAssaf ZuckGad Marom
    • G01T1/178G01T3/08G01T1/24H01L21/00G01T1/26
    • G01T3/08
    • A solid-state detector for detection of neutron and alpha particles detector and methods for manufacturing and use thereof are described. The detector has an active region formed of a polycrystalline semiconductor compound comprising a particulate semiconductor material sensitive to neutron and alpha particles radiation imbedded in a binder. The particulate semiconductor material contains at least one element sensitive to neutron and alpha particles radiation, selected from a group including 10Boron, 6Lithium, 113Cadmium, 157Gadolinium and 199Mercury. The semiconductor compound is sandwiched between an electrode assembly configured to detect the neutron and alpha particles interacting with the bulk of the active region. The binder can be either an organic polymer binder or inorganic binder. The organic polymer binder comprises at least one polymer that can be selected from the group comprising polystyrene, polypropylene, Humiseal™ and Nylon-6. The inorganic binder can be selected from B2O3, PbO/B2O3/, Bi2O3/PbO, Borax glass, Bismuth Borate glass and Boron Oxide based glass.
    • 描述了用于检测中子和α粒子检测器的固态检测器及其制造和使用方法。 检测器具有由多晶半导体化合物形成的有源区,该多晶半导体化合物包含对嵌入在粘合剂中的中子和α粒子辐射敏感的微粒半导体材料。 颗粒状半导体材料含有至少一种对中子和α粒子辐射敏感的元素,其选自包括10Boron,6La,113Cadium,157Gadolinium和199Mercury的组。 半导体化合物被夹在被配置为检测与活性区域的大部分相互作用的中子和α粒子的电极组件之间。 粘合剂可以是有机聚合物粘合剂或无机粘合剂。 有机聚合物粘合剂包含至少一种可选自聚苯乙烯,聚丙烯,Humiseal TM和尼龙-6的聚合物。 无机粘合剂可以选自B2O3,PbO / B2O3 /,Bi2O3 / PbO,硼砂玻璃,硼酸铋玻璃和氧化硼基玻璃。
    • 10. 发明申请
    • Flat-panel detector with avalanche gain
    • 具有雪崩增益的平板探测器
    • US20060054835A1
    • 2006-03-16
    • US11201658
    • 2005-08-10
    • John RowlandsWei Zhao
    • John RowlandsWei Zhao
    • G01T1/26
    • G01T1/2018G01T1/2928
    • The present invention is an indirect AMFPI wherein a phosphor such as a structured cesium iodide (CsI) is used to convert x-ray energy to optical photons or a charge, which is then detected by a two-dimensional array of either thin-film transistors (TFTs) such as an amorphous a-Se TFTs or a photodiode array. A scanning control circuit generates pulses to turn on the TFTs one row at a time, and thus the charge in the individual arrays is transferred from the TFT to one or more external charge-sensitive amplifiers. The charge-sensitive amplifiers are shared by all the pixels in the same column. The two-dimensional array can be read in real time.
    • 本发明是间接AMFPI,其中使用诸如结构化碘化铯(CsI)的磷光体将x射线能量转换成光子或电荷,然后通过薄膜晶体管的二维阵列 (TFT),例如非晶形a-Se TFT或光电二极管阵列。 扫描控制电路产生脉冲以一次一行地导通TFT,因此各阵列中的电荷从TFT传送到一个或多个外部电荷敏感放大器。 电荷敏感放大器由同一列中的所有像素共享。 可以实时读取二维数组。