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    • 6. 发明授权
    • Method for manufacturing trichlorosilane
    • 制备三氯硅烷的方法
    • US08828345B2
    • 2014-09-09
    • US13533035
    • 2012-06-26
    • Mitsutoshi Narukawa
    • Mitsutoshi Narukawa
    • C01B33/00C01B33/08C01B33/04C01B33/02
    • C01F7/58C01B33/1071
    • This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.
    • 该制造三氯硅烷的方法包括:使冶金级硅与四氯化硅和氢反应,得到反应气体; 冷凝反应气体以获得冷凝物; 并使用包括第一蒸馏塔和二级蒸馏塔的蒸馏系统蒸馏冷凝物,以精制三氯硅烷。 在将冷凝物保持在高温状态下,使冷凝物中的氯化铝浓度变成饱和溶解度以下的范围内,冷凝物流入第一蒸馏塔。 在第一蒸馏塔中蒸馏的液体通过二次蒸馏塔蒸馏以精制三氯硅烷。 其中氯化铝浓缩的液体从第一蒸馏塔的底部提取。 将萃取液浓缩并干燥,然后排出氯化铝。
    • 9. 发明申请
    • Fluorspar/Iodide process for reduction,purificatioin, and crystallization of silicon
    • 用于还原,纯化和硅结晶的荧光/碘化法
    • US20120082610A1
    • 2012-04-05
    • US12924667
    • 2010-10-02
    • Matthew J. Channon
    • Matthew J. Channon
    • C01B33/023C01B33/08
    • C01B33/10768C01B7/14C01B33/031C01B33/10705
    • Method and apparatus for producing molten purified crystalline silicon from low-grade siliceous fluorspar ore, sulfur trioxide gas, and a metallic iodide salt. Method involves: (1) initially reacting silicon dioxide-bearing fluorspar ore and sulfur trioxide gas in sulfuric acid to create silicon tetrafluoride gas and fluorogypsum; (2) reacting the product gas with a heated iodide salt to form a fluoride salt and silicon tetraiodide; (3) isolating silicon tetraiodide from impurities and purifying it by washing steps and distillation in a series of distillation columns; (4) heating the silicon tetraiodide to its decomposition temperature in a silicon crystal casting machine, producing pure molten silicon metal ready for crystallization; and pure iodine gas, extracted as liquid in a cold-wall chamber. The system is batch process-based, with continuous elements. The system operates largely at atmospheric pressure, requiring limited inert gas purges during batch changes.
    • 从低等级硅质萤石,三氧化硫气体和金属碘化物盐生产熔融纯化晶体硅的方法和装置。 方法包括:(1)首先使含二氧化硅的氟石和三氧化硫气体在硫酸中反应,生成四氟化硅气体和氟石膏; (2)使产物气体与加热的碘化物盐反应以形成氟化物盐和四碘化硅; (3)从杂质中分离四碘化硅,并通过洗涤步骤进行纯化并在一系列蒸馏塔中进行蒸馏; (4)在硅晶体铸造机中加热四碘化硅至其分解温度,制备准备结晶的纯熔融硅金属; 和纯碘气体,在冷壁室中作为液体提取。 该系统是基于批处理的,具有连续的元素。 该系统主要在大气压下运行,在批量更换期间需要有限的惰性气体清洗。