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    • 4. 发明授权
    • Superconductor magnetic memory using magnetic films
    • 使用磁性膜的超导体磁记忆体
    • US5039656A
    • 1991-08-13
    • US316699
    • 1989-02-28
    • Yasuharu Hidaka
    • Yasuharu Hidaka
    • G11C11/44H01L27/18H01L39/18
    • H01L39/18G11C11/44H01L27/18Y10S505/70Y10S505/704Y10S505/832Y10S505/833
    • This invention relates to a magnetic memory including a first superconductor wire, a second superconductor wire disposed in such a manner as to cross the first superconductor wire substantially orthogonally, a first magnetic film disposed at the point of intersection between the first and second superconductor wires and a second magnetic film interposed between the first magnetic film and the first or second superconductor films, wherein at least one of the uniaxial magnetic anisotropy within the plane of the films and coercive force of the first and second magnetic films is mutually different. Furthermore, a superconductor film containing a large number of microscopic Josephson junctions is disposed between the first and second magnetic films or on the other side of the superconductor wire connected to the magnetic film, and a lead wire for applying a current is connected to the superconductor film.
    • 本发明涉及一种磁存储器,包括第一超导体线,第二超导体线,其布置成基本正交地穿过第一超导体线;布置在第一和第二超导体线之间的交点处的第一磁性膜和 插入在第一磁性膜和第一或第二超导膜之间的第二磁性膜,其中膜的平面内的单轴磁各向异性和第一和第二磁性膜的矫顽力中的至少一个相互不同。 此外,在第一和第二磁性膜之间或连接到磁性膜的超导体线的另一侧上设置包含大量微观约瑟夫逊结的超导体膜,并且将用于施加电流的引线连接到超导体 电影。