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1. 发明授权

US12054842B2 Composition for tin-silver alloy electroplating comprising a complexing agent 有权
公开(公告)号：US12054842B2
公开(公告)日：2024-08-06
申请号：US17040642
申请日：2019-03-22
申请人： BASF SE
发明人： Katharina Fritzsche , Doris Kremzow-Graw , Marco Arnold , Alexander Fluegel
IPC分类号： C25D3/32 , B32B33/00 , C07D213/32 , C25D3/46 , C25D3/60 , C25D3/64 , C25D5/02 , C25D7/00
CPC分类号： C25D3/32 , B32B33/00 , C07D213/32 , C25D3/46 , C25D3/60 , C25D3/64 , C25D5/02 , C25D7/00
摘要： An aqueous composition comprising (a) metal ions comprising tin ions and silver ions and (b) at least one complexing agent of formula (C1) R1—X1—S—X21[D1-X22—]n—S—X3—R2, (C2) R1—X1—S—X31-D2-[X32—S—]nX3—R2, (C3) R3—X1—S—X41-[D3-X42—]nS—X3—R4 wherein X1, X3 are independently selected from a linear or branched C1-C12 alkanediyl, which may be unsubstituted or substituted by OH; X21, X22 are independently selected from X1, which may be further substituted by —X5—COOR12, —X5—SO2—O—R12, a C2 to C6 polyoxyalkylene group of formula —(O—CH2—CHR11)z—OH, or a combination thereof, and —X1—NH—CO—X6—CO—NH—X1—; X31, X32 are independently selected from a chemical bond and X1; X41, X42 are independently selected from X1; X5 is a linear or branched Ci to C10 alkyl; X6 is selected from X1 and a divalent 5 or 6 membered aromatic group; R1, R2 are independently selected from a monovalent 5 or 6 membered aromatic N-heterocyclic group comprising one N atom or two N atoms which are separated by at least one C atom, and its derivatives received by N-alkylation with a C1-C6-alkyl group, which may be substituted by —COOR12 or —SO2—O—R12, and which aromatic N-heterocyclic group may optionally further comprise, under the proviso that X21 is substituted by at least one OH, one S atom; R3, R4 are independently selected from a monovalent 5 or 6 membered aliphatic N-heterocyclic group comprising one N atom and one O atom; D1 is independently selected from S, O and NR10−; D2 is (a) a divalent 5 or 6 membered aliphatic heterocyclic ring system comprising 1 or 2 S atoms, or (b) a 5 or 6 membered aromatic heterocyclic ring system comprising at least two N atoms and optionally one or two S atoms; D3 is independently selected from S and NR10−; n is an integer of from 0 to 5; z is an integer from 1 to 50; R10 is selected from H and a linear or branched C1-C12 alkyl; R11 is selected from H and a linear or branched C1 to C6 alkyl; and R12 is selected from R10 and a cation.

2. 发明授权

US11686007B2 Tin-indium alloy electroplating solution 有权
公开(公告)号：US11686007B2
公开(公告)日：2023-06-27
申请号：US16220883
申请日：2018-12-14
申请人： New Mexico Tech University Research Park Corporation
发明人： Bhaskar S. Majumdar , Sherin Bhassyvasantha , Luke Soule
IPC分类号： C25D3/56 , C25D3/60 , C25D3/32 , C25D3/30 , H05K3/24 , C23C18/31 , C25D17/10
CPC分类号： C25D3/60 , C23C18/31 , C25D3/30 , C25D3/32 , C25D17/10 , H05K3/24
摘要： The disclosure provides a Sn—In electroplating bath that is Pb-free, environmentally safe, operates at room temperature, and does not require changes in existing plating assemblies. Room temperature aging and limited thermal cycling tests show that the electroplated Sn—In alloy film on a Cu substrate effectively mitigates whisker growth.

3. 发明授权

US11274375B2 Tin plating bath and a method for depositing tin or tin alloy onto a surface of a substrate 有权
公开(公告)号：US11274375B2
公开(公告)日：2022-03-15
申请号：US16466842
申请日：2017-12-20
申请人： Atotech Deutschland GmbH
发明人： Kadir Tuna , Arnd Kilian
IPC分类号： B22F7/00 , C25D3/32 , C23C18/16 , C23C18/48 , C23C18/52 , C09D5/00 , C09D5/10 , C23C16/00 , C23C18/00
摘要： The present invention concerns a tin plating bath comprising tin ions; at least one complexing agent selected from the group consisting of pyrophosphate ions, linear polyphosphate ions and cyclic polyphosphate ions and a nitrogen and sulfur containing stabilizing additive and titanium (III) ions as a reducing agent suitable to reduce tin ions to metallic tin. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.

4. 发明申请

US20210180201A1 COMPOSITION FOR TIN OR TIN ALLOY ELECTROPLATING COMPRISING SUPPRESSING AGENT 有权
公开(公告)号：US20210180201A1
公开(公告)日：2021-06-17
申请号：US17048770
申请日：2019-04-11
申请人： BASF SE
发明人： Alexander FLUEGEL , Marco ARNOLD , Nadine ENGELHARDT , Marcel Patrik KIENLE
IPC分类号： C25D3/32
摘要： The present invention provides an aqueous composition comprising tin ions and at least one compound of formula I wherein X1 is selected from a linear or branched C1-C12 alkanediyl, which may optionally be interrupted by O or S or a C5 to C12 aromatic moiety, R11 is a copolymer of ethylene oxide and a further C3 to C6 alkylene oxide, wherein the content of ethylene oxide is from 5 to 30% by weight, R12 is selected from H, R11, R40, R13, R14, are (a) independently selected from H, R11, R40, or (b) may together form a divalent group X13; X13 is selected from a linear or branched C1-C12 alkanediyl, which may optionally be interrupted by O, S or NR43; R40 is H or a linear or branched C1-C20 alkyl, R43 is selected from H, R11 and a linear or branched C1-C20 alkyl.

5. 发明申请

US20210025070A1 COMPOSITION FOR TIN-SILVER ALLOY ELECTROPLATING COMPRISING A COMPLEXING AGENT 有权
公开(公告)号：US20210025070A1
公开(公告)日：2021-01-28
申请号：US17040642
申请日：2019-03-22
申请人： BASF SE
发明人： Katharina FRITZSCHE , Doris KREMZOW-GRAW , Marco ARNOLD , Alexander FLUEGEL
IPC分类号： C25D3/32 , C25D3/46
摘要： An aqueous composition comprising (a) metal ions comprising tin ions and silver ions and (b) at least one complexing agent of formula (C1) R1—X1—S—X21[D1-X22—]n—S—X3—R2, (C2) R1—X1—S—X31-D2-[X32—S—]nX3—R2, (C3) R3—X1—S—X41-[D3—X42—]nS—X3—R4 wherein X1, X3 are independently selected from a linear or branched C1-C12 alkanediyl, which may be unsubstituted or substituted by OH; X21, X22 are independently selected from X1, which may be further substituted by —X5—COOR12, —X5—SO2—O—R12, a C2 to C6 polyoxyalkylene group of formula —(O—CH2—CHR11)z—OH, or a combination thereof, and —X1—NH—CO—X6—CO—NH—X1—; X31, X32 are independently selected from a chemical bond and X1; X41, X42 are independently selected from X1; X5 is a linear or branched Ci to C10 alkyl; X6 is selected from X1 and a divalent 5 or 6 membered aromatic group; R1, R2 are independently selected from a monovalent 5 or 6 membered aromatic N-heterocyclic group comprising one N atom or two N atoms which are separated by at least one C atom, and its derivatives received by N-alkylation with a C1-C6-alkyl group, which may be substituted by —COOR12 or —SO2—O—R12, and which aromatic N-heterocyclic group may optionally further comprise, under the proviso that X21 is substituted by at least one OH, one S atom; R3, R4 are independently selected from a monovalent 5 or 6 membered aliphatic N-heterocyclic group comprising one N atom and one O atom; D1 is independently selected from S, O and NR10−; D2 is (a) a divalent 5 or 6 membered aliphatic heterocyclic ring system comprising 1 or 2 S atoms, or (b) a 5 or 6 membered aromatic heterocyclic ring system comprising at least two N atoms and optionally one or two S atoms; D3 is independently selected from S and NR10−; n is an integer of from 0 to 5; z is an integer from 1 to 50; R10 is selected from H and a linear or branched C1-C12 alkyl; R11 is selected from H and a linear or branched C1 to C6 alkyl; and R12 is selected from R10 and a cation.

6. 发明申请

US20210025069A1 TIN OR TIN ALLOY PLATING SOLUTION AND BUMP FORMING METHOD 有权
公开(公告)号：US20210025069A1
公开(公告)日：2021-01-28
申请号：US16768921
申请日：2019-03-19
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Koji Tatsumi
IPC分类号： C25D3/32 , C25D5/50 , H01L23/00 , C25D3/60
摘要： This tin or tin alloy plating solution includes a soluble salt including at least a stannous salt (A), an acid selected from an organic acid and an inorganic acid or a salt thereof (B), a surfactant (C), benzalacetone (D), and a solvent (E), wherein the plating solution is used to form a pattern in which bump diameters are different from each other on a base material, an amount of the benzalacetone (D) is 0.05 g/L to 0.2 g/L, a mass ratio (C/D) of the surfactant (C) to the benzalacetone (D) is 10 to 200, and a mass ratio (E/D) of the solvent (E) to the benzalacetone (D) is 10 or more.

7. 发明授权

US10829862B2 Tin-plated product and method for producing same 有权
公开(公告)号：US10829862B2
公开(公告)日：2020-11-10
申请号：US15122568
申请日：2015-02-25
申请人： DOWA METALTECH CO., LTD. , YAZAKI CORPORATION
发明人： Tatsunori Murata , Hirotaka Kotani , Hideki Endo , Akira Sugawara , Yuta Sonoda , Tetsuo Kato , Hideki Ohsumi , Jyun Toyoizumi
IPC分类号： C25D5/50 , B32B15/01 , C25D5/34 , C25D5/12 , C25D7/00 , C25D3/12 , C25D3/32 , C25D3/38 , C25F1/00
摘要： In a tin-plated product wherein a surface of a substrate 10 of copper or a copper alloy is plated with tin, an underlying layer 12 of at least one of nickel and a copper-nickel alloy is formed on the surface of the substrate 10, and an outermost layer formed on the surface of the underlying layer 12 is composed of a copper-tin alloy layer 14 and tin layers 16, the copper-tin alloy 14 being formed of a large number of crystal grains of a copper-tin alloy, each of the tin layers 16 being arranged in a corresponding one of recessed portions, each of which is formed between adjacent crystal grains of the large number of crystal grains of the copper-tin alloy, the adjacent crystal grains being adjacent to each other on the outermost surface of the outer most layer, the area ratio occupied by the tin layers 16 on the outermost surface being 20 to 80%, and the maximum thickness of the tin layers 16 being smaller than the average particle diameter of the crystal grains of the copper-tin alloy.

8. 发明授权

US10683275B2 Leveler, leveler composition and method for electrodeposition of metals in microelectronics 有权
公开(公告)号：US10683275B2
公开(公告)日：2020-06-16
申请号：US16389934
申请日：2019-04-20
申请人： Shinhao Materials LLC
发明人： Yun Zhang , Tao Ma , Peipei Dong , Zifang Zhu , Chen Chen
IPC分类号： C07D311/86 , C07D311/84 , C25D3/38 , C25D7/12 , C25D3/22 , C25D3/32 , C25D3/46 , C25D3/54
摘要： The present application discloses a levelling compound for electrodepositing metals. The metal is of formula (II):

9. 发明授权

US10648096B2 Electrolyte, method of forming a copper layer and method of forming a chip 有权
公开(公告)号：US10648096B2
公开(公告)日：2020-05-12
申请号：US14948463
申请日：2015-11-23
申请人： Infineon Technologies AG
发明人： Werner Robl , Michael Melzl , Manfred Schneegans , Bernhard Weidgans , Franziska Haering
IPC分类号： C25D5/50 , C25D17/12 , C25D3/38 , C25D3/48 , C25D3/46 , C25D3/12 , C25D3/52 , C25D3/32 , C25D15/00 , C25D7/12 , H01L21/288 , H01L23/532
摘要： An electrolyte may be provided. The electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C., and a water soluble metal salt, and the electrolyte may be free from carbon nanotubes. In various embodiments, a method of forming a metal layer may be provided: The method may include depositing a metal layer on a carrier using an electrolyte, wherein the electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C. and a water soluble metal salt, wherein the electrolyte is free from carbon nanotubes; and annealing the metal layer to form a metal layer comprising a plurality of pores. In various embodiments, a semiconductor device may be provided. The semiconductor device may include a metal layer including a plurality of pores, wherein the plurality of pores may be formed in the metal layer as remnants of an additive having resided in the plurality of pores and having at least partially decomposed or evaporated. To keep a high elasticity over a wide temperature range (up to 450° C.), an adhesion layer may stabilize the metal grain boundaries and may fix dislocation gliding inside metal grains. In various embodiments, a metal layer is provided. The metal layer may include a plurality of pores having ellipsoidal or spheroidal shape.

10. 发明申请

US20190301039A1 METAL DEPOSITS, COMPOSITIONS, AND METHODS FOR MAKING THE SAME 审中-公开
公开(公告)号：US20190301039A1
公开(公告)日：2019-10-03
申请号：US16438077
申请日：2019-06-11
申请人： Iontra LLC
发明人： Daniel A. Konopka , Li Hsien Chou
IPC分类号： C25D3/20 , C25D3/32 , C25D3/58 , C25D3/38 , C25D3/10 , C25D3/26 , C25D3/22 , C25D3/12
摘要： Provided herein is a composition for forming a metal deposit on a substrate. The composition consists essentially of a carboxamide, trialkylamine chloride, and a metal salt. The carboxamide comprises Formula (I). The trialkylamine chloride and the carboxamide are in molar ratio between 1:1 and 1:30 to form an ionic liquid. The trialkylamine chloride is trimethylamine chloride (TMACl), triethylamine chloride (TEACl), triethanolamine chloride, or combinations thereof. The metal salt has the formula MXy, wherein M is a metal, X is a halide, and y is an oxidation number of M, the metal salt being in a concentration between about 0.2 and about 1.5 moles per liter of the ionic liquid. The metal deposit has an average grain size between about 0.2 μm and about 3 μm and contains less than about 1 mol % of each oxygen, carbon, and chlorine.

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