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1. 发明申请

US20180026224A1 CORE-SHELL NANOWIRE, METHOD FOR SYNTHESIZING THE CORE-SHELL NANOWIRE, AND TRANSPARENT ELECTRODE AND ORGANIC LIGHT EMITTING DIODE INCLUDING THE CORE-SHELL NANOWIRE 审中-公开
公开(公告)号：US20180026224A1
公开(公告)日：2018-01-25
申请号：US15546528
申请日：2015-01-26
申请人： DUKSAN HI-METAL CO., LTD.
发明人： Young Zo YOO , Yoon Soo CHOI , Yeong Jin LIM
IPC分类号： H01L51/52
CPC分类号： H01L51/5206 , B82Y20/00 , B82Y30/00 , B82Y40/00 , Y10S977/762 , Y10S977/766 , Y10S977/81 , Y10S977/892 , Y10S977/896 , Y10S977/932
摘要： A nanowire according to an embodiment of the invention comprises a nanowire core and a metal-compound coated on the nanowire core, wherein the nanowire core comprises at least two bent portions, and wherein an angle (α) between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0

2. 发明授权

US09791602B2 Nanowire bundle array, ultrahigh-performance broadband optical film, and method of manufacturing the same 有权
公开(公告)号：US09791602B2
公开(公告)日：2017-10-17
申请号：US15010044
申请日：2016-01-29
申请人： INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
发明人： Kyoung Sik Kim , Gu Min Kang , Kyu Young Bae
IPC分类号： G02B5/02 , B82Y20/00
CPC分类号： G02B5/0247 , B82Y20/00 , B82Y30/00 , B82Y40/00 , G02B5/02 , G02B5/0268 , G02B5/0278 , Y02E10/52 , Y02E10/549 , Y10S977/766
摘要： Disclosed are a nanowire bundle array performing optical haze control for enhancing optical characteristics of optoelectronic device systems and optical systems, an ultrahigh-performance broadband optical film, and a method of manufacturing the same.

3. 发明申请

US20060226551A1 Integrated circuit device and method of producing the same 有权
公开(公告)号：US20060226551A1
公开(公告)日：2006-10-12
申请号：US11448805
申请日：2006-06-08
申请人： Yuji Awano
发明人： Yuji Awano
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/7784 , B82Y10/00 , H01L21/28562 , H01L21/28581 , H01L21/76838 , H01L21/76879 , H01L23/53276 , H01L29/42316 , H01L29/475 , H01L29/66431 , H01L29/66454 , H01L29/7783 , H01L51/0048 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/762 , Y10S977/765 , Y10S977/766 , H01L2924/00
摘要： An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by breaking the limit of lithography technique is provided. The former device comprises a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, the via being formed of one or more cylindrical structures made up of carbon atoms. The latter device comprises a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, at least part of the wiring members being formed of one or more cylindrical structures made up of carbon atoms. The latter device is preferably manufactured by a method comprising using a CVD process for the formation of the cylindrical structures, while applying a direct current electric field so as to grow the cylindrical structures in one direction, or applying an alternating current electric field so as to grow the cylindrical structures in two directions. A semiconductor device using a carbon nanotube and a method of forming a pattern using a carbon nanotube as a mask are also disclosed.

4. 发明授权

US10619135B2 Growth factor-free proliferation and differentiation of neural stem cells on inorganic extracellular nanomatrices 有权
公开(公告)号：US10619135B2
公开(公告)日：2020-04-14
申请号：US15600808
申请日：2017-05-22
申请人： Hong Kong Baptist University
发明人： Kin Lam Yung , Zhifeng Huang , Nga Ping Lui
IPC分类号： C01B33/18 , C12N5/0797 , C01G23/04 , C01G23/047 , B82Y30/00 , B82Y5/00 , B82Y40/00
CPC分类号： C12N5/0623 , C01B33/18 , C01G23/043 , C01G23/047 , B82Y5/00 , B82Y30/00 , B82Y40/00 , C01P2004/16 , C12N2533/00 , C12N2535/00 , Y10S977/766 , Y10S977/768 , Y10S977/891 , Y10S977/923
摘要： The present invention provides nanostructures for use in proliferation and differentiation of neural stem cells. The present invention also provides method of proliferating and differentiating neural stem cells.

5. 发明授权

US07696843B2 MEMS filter device having a nanosize coupling element and manufacturing method thereof 失效
标题翻译：具有纳米尺寸耦合元件的MEMS滤波器件及其制造方法
公开(公告)号：US07696843B2
公开(公告)日：2010-04-13
申请号：US11570924
申请日：2005-07-25
申请人： Akinori Hashimura
发明人： Akinori Hashimura
IPC分类号： H03H9/50 , H03H9/05
CPC分类号： H03H9/462 , B82Y10/00 , B82Y30/00 , H03H9/2436 , H03H9/505 , H03H2009/0237 , H03H2009/02496 , H03H2009/02503 , H03H2009/02527 , H03H2009/2442 , Y10S977/742 , Y10S977/762 , Y10S977/766
摘要： An object of the invention is to provide a coupling element of an MEMS filter with design flexibility and minimization of mass loading effects. The invention provides a structure wherein the mass loading effects are not reflected on the MEMS filter characteristic by using a nanosize coupling element with a very small mass compared to a microsize MEMS resonator, such as a carbon nanotube (CNT), as a coupling element part.
摘要翻译：本发明的一个目的是提供具有设计灵活性和最小化质量负载效应的MEMS滤波器的耦合元件。本发明提供了一种结构，其中通过使用具有非常小的质量的纳米尺度耦合元件，与微型MEMS谐振器（例如碳纳米管（CNT））作为耦合元件部分相比，质量负载效应未反映在MEMS滤波器特性上。

6. 发明授权

US07332810B2 Integrated circuit device and method of producing the same 有权
标题翻译：集成电路装置及其制造方法
公开(公告)号：US07332810B2
公开(公告)日：2008-02-19
申请号：US11448805
申请日：2006-06-08
申请人： Yuji Awano
发明人： Yuji Awano
IPC分类号： H01L23/48
CPC分类号： H01L29/7784 , B82Y10/00 , H01L21/28562 , H01L21/28581 , H01L21/76838 , H01L21/76879 , H01L23/53276 , H01L29/42316 , H01L29/475 , H01L29/66431 , H01L29/66454 , H01L29/7783 , H01L51/0048 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/762 , Y10S977/765 , Y10S977/766 , H01L2924/00
摘要： An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by breaking the limit of lithography technique is provided. The former device comprises a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, the via being formed of one or more cylindrical structures made up of carbon atoms. The latter device comprises a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, at least part of the wiring members being formed of one or more cylindrical structures made up of carbon atoms. The latter device is preferably manufactured by a method comprising using a CVD process for the formation of the cylindrical structures, while applying a direct current electric field so as to grow the cylindrical structures in one direction, or applying an alternating current electric field so as to grow the cylindrical structures in two directions. A semiconductor device using a carbon nanotube and a method of forming a pattern using a carbon nanotube as a mask are also disclosed.
摘要翻译：提供一种集成电路装置，其具有具有良好的抗迁移性的通孔，导致布线的断裂，或具有通过破坏光刻技术的极限而被罚款的布线结构的集成电路器件。前一种器件包括制造在半导体衬底上的多个元件，用于制造元件和集成电路器件功能的布线，以及用于将不同层中的布线互连的通孔，该通孔由一个或多个由碳原子。后一种装置包括制造在半导体衬底上的多个元件和用于使元件和集成电路器件起作用的布线构件，至少部分布线构件由一个或多个由碳原子组成的圆柱形结构形成。后一种装置优选通过包括使用CVD工艺来形成圆柱形结构的方法制造，同时施加直流电场以使圆柱形结构沿一个方向生长，或施加交流电场，以便在两个方向上生长圆柱形结构。还公开了使用碳纳米管的半导体器件和使用碳纳米管作为掩模形成图案的方法。

7. 发明申请

US20070267735A1 Semiconductor device with semiconductor chips mounted on mounting board 有权
标题翻译：具有半导体芯片的半导体器件安装在安装板上
公开(公告)号：US20070267735A1
公开(公告)日：2007-11-22
申请号：US11706347
申请日：2007-02-15
申请人： Yuji Awano , Masataka Mizukoshi , Taisuke Iwai , Tomoji Nakamura
发明人： Yuji Awano , Masataka Mizukoshi , Taisuke Iwai , Tomoji Nakamura
IPC分类号： H01L23/48
CPC分类号： H01L23/49811 , H01L21/6835 , H01L23/49877 , H01L24/03 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/72 , H01L24/73 , H01L24/90 , H01L24/91 , H01L2224/03505 , H01L2224/0401 , H01L2224/11003 , H01L2224/13078 , H01L2224/13099 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81901 , H01L2224/81904 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/014 , Y10S977/72 , Y10S977/721 , Y10S977/722 , Y10S977/762 , Y10S977/763 , Y10S977/766 , Y10S977/784 , Y10S977/932 , Y10S977/936 , Y10S977/937 , Y10S977/938 , Y10S977/963 , H01L2924/00 , H01L2224/72
摘要： A plurality of conductive pads (2) are formed on a mounting surface of a mounting board. Conductive pads (11) are formed on a principal surface of a semiconductor chip (10) at positions corresponding to the conductive pads of the mounting board, when the principal surface faces toward the mounting board. A plurality of conductive nanotubes (12) extend from the conductive pads of one of the mounting board and the semiconductor chip. A press mechanism (3) presses the semiconductor chip against the mounting board and restricts a position of the semiconductor chip on the mounting surface to mount the semiconductor chip on the mounting board, in a state that tips of the conductive nanotubes are in contact with the corresponding conductive pads not formed with the conductive nanotubes.
摘要翻译：多个导电焊盘（2）形成在安装板的安装表面上。当主表面朝向安装板时，导电焊盘（11）在与安装板的导电焊盘相对应的位置处形成在半导体芯片（10）的主表面上。多个导电纳米管（12）从安装板和半导体芯片之一的导电焊盘延伸。按压机构（3）将半导体芯片压靠在安装基板上，并将半导体芯片的位置限制在安装面上，以将半导体芯片安装在安装基板上，导电性纳米管的尖端与不形成导电纳米管的相应的导电焊盘。

8. 发明申请

US20060243972A1 Structure of polymer-matrix conductive film and method for fabricating the same 失效
公开(公告)号：US20060243972A1
公开(公告)日：2006-11-02
申请号：US11477412
申请日：2006-06-30
申请人： Ruoh-Huey Uang , Yu-Chih Chen , Ren-Jan Lin , Syh-Yuh Cheng
发明人： Ruoh-Huey Uang , Yu-Chih Chen , Ren-Jan Lin , Syh-Yuh Cheng
IPC分类号： H01L29/08
CPC分类号： H01L23/49827 , B82Y10/00 , H01L24/29 , H01L24/83 , H01L2224/2919 , H01L2224/29298 , H01L2224/838 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/12044 , H01L2924/14 , H01R4/04 , H01R13/2414 , H05K3/323 , H05K2201/026 , H05K2201/083 , H05K2201/10378 , H05K2203/0726 , H05K2203/104 , Y10S977/761 , Y10S977/762 , Y10S977/766 , Y10S977/77 , Y10S977/778 , Y10T29/49126 , Y10T29/49155 , Y10T29/49204 , H01L2924/00 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： A composite conductive film formed of a polymer-matrix and a plurality of conductive lines less than micro-sized and its fabricating method are provided. The conductive lines are arranged parallel and spaced apart from each other so as to provide anisotropic conductivity. The present conductive film can serve as an electrical connection between a fine-pitch chip and a substrate. Additionally, an adhesive layer is formed on two opposite sides of the conductive film along its conductive direction to increase adhesive areas. The strength and reliability of the package using the conductive film are thus enhanced.

9. 发明授权

US07084507B2 Integrated circuit device and method of producing the same 有权
公开(公告)号：US07084507B2
公开(公告)日：2006-08-01
申请号：US10107480
申请日：2002-03-28
申请人： Yuji Awano
发明人： Yuji Awano
IPC分类号： H01L23/48
CPC分类号： H01L29/7784 , B82Y10/00 , H01L21/28562 , H01L21/28581 , H01L21/76838 , H01L21/76879 , H01L23/53276 , H01L29/42316 , H01L29/475 , H01L29/66431 , H01L29/66454 , H01L29/7783 , H01L51/0048 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/762 , Y10S977/765 , Y10S977/766 , H01L2924/00
摘要： An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by breaking the limit of lithography technique is provided. The former device comprises a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, the via being formed of one or more cylindrical structures made up of carbon atoms. The latter device comprises a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, at least part of the wiring members being formed of one or more cylindrical structures made up of carbon atoms. The latter device is preferably manufactured by a method comprising using a CVD process for the formation of the cylindrical structures, while applying a direct current electric field so as to grow the cylindrical structures in one direction, or applying an alternating current electric field so as to grow the cylindrical structures in two directions. A semiconductor device using a carbon nanotube and a method of forming a pattern using a carbon nanotube as a mask are also disclosed.

10. 发明申请

US20180323399A1 METHOD OF MANUFACTURING METAL NANOWIRE AND LIGHT-TRANSMITTING ELECTRODE AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING METAL NANOWIRE MANUFACTURED THEREBY 审中-公开
公开(公告)号：US20180323399A1
公开(公告)日：2018-11-08
申请号：US16015015
申请日：2018-06-21
申请人： Duksan Hi-Metal Co., Ltd.
发明人： Young Zo YOO , Yoon Soo CHOI , Yeong Jin LIM
IPC分类号： H01L51/52 , B82Y40/00
CPC分类号： H01L51/5206 , B82Y20/00 , B82Y30/00 , B82Y40/00 , Y10S977/762 , Y10S977/766 , Y10S977/81 , Y10S977/892 , Y10S977/896 , Y10S977/932
摘要： A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle (α) between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0°

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