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1. 发明授权

US07521693B2 Ion sources, systems and methods 有权
公开(公告)号：US07521693B2
公开(公告)日：2009-04-21
申请号：US11599935
申请日：2006-11-15
申请人： Billy W. Ward , John A. Notte, IV , Louis S. Farkas, III , Randall G. Percival , Raymond Hill , Shawn McVey , Johannes Bihr
发明人： Billy W. Ward , John A. Notte, IV , Louis S. Farkas, III , Randall G. Percival , Raymond Hill , Shawn McVey , Johannes Bihr
IPC分类号： H01J49/10 , H01J27/26 , H01J27/02
CPC分类号： H01J37/08 , B82Y10/00 , B82Y40/00 , H01J27/26 , H01J37/20 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J37/3174 , H01J2237/0807 , H01J2237/202 , H01J2237/20228 , H01J2237/2566 , H01J2237/2623 , H01J2237/2812 , H01J2237/30438 , H01J2237/3174 , H01J2237/31755
摘要： Ion sources, systems and methods are disclosed.

2. 发明授权

US07511280B2 Ion sources, systems and methods 有权
公开(公告)号：US07511280B2
公开(公告)日：2009-03-31
申请号：US11600513
申请日：2006-11-15
申请人： Billy W. Ward , John A. Notte, IV , Louis S. Farkas, III , Randall G. Percival , Raymond Hill
发明人： Billy W. Ward , John A. Notte, IV , Louis S. Farkas, III , Randall G. Percival , Raymond Hill
IPC分类号： H01J49/10 , H01J27/26 , H01J27/02
CPC分类号： H01J37/08 , B82Y10/00 , B82Y40/00 , H01J27/26 , H01J37/20 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J37/3174 , H01J2237/0807 , H01J2237/202 , H01J2237/20228 , H01J2237/2566 , H01J2237/2623 , H01J2237/2812 , H01J2237/30438 , H01J2237/3174 , H01J2237/31755
摘要： Ion sources, systems and methods are disclosed.

3. 发明申请

US20070221843A1 Ion sources, systems and methods 有权
标题翻译：离子源，系统和方法
公开(公告)号：US20070221843A1
公开(公告)日：2007-09-27
申请号：US11599879
申请日：2006-11-15
申请人： Billy Ward , John Notte , Louis Farkas , Randall Percival , Raymond Hill
发明人： Billy Ward , John Notte , Louis Farkas , Randall Percival , Raymond Hill
IPC分类号： G01N23/00 , H01J27/02
CPC分类号： H01J37/08 , B82Y10/00 , B82Y40/00 , H01J37/20 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J37/3174 , H01J2237/0807 , H01J2237/202 , H01J2237/20228 , H01J2237/2566 , H01J2237/2623 , H01J2237/2812 , H01J2237/30438 , H01J2237/3174 , H01J2237/31755
摘要： Ion sources, systems and methods are disclosed.
摘要翻译：公开了离子源，系统和方法。

4. 发明申请

US20070210251A1 Ion sources, systems and methods 有权
公开(公告)号：US20070210251A1
公开(公告)日：2007-09-13
申请号：US11600874
申请日：2006-11-15
申请人： Billy Ward , John Notte , Louis Farkas , Randall Percival , Raymond Hill
发明人： Billy Ward , John Notte , Louis Farkas , Randall Percival , Raymond Hill
IPC分类号： G01N23/00
CPC分类号： H01J37/08 , B82Y10/00 , B82Y40/00 , G01N23/2255 , H01J27/26 , H01J37/20 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J37/3174 , H01J2237/0807 , H01J2237/202 , H01J2237/20228 , H01J2237/2566 , H01J2237/2623 , H01J2237/2812 , H01J2237/30438 , H01J2237/3174 , H01J2237/31755
摘要： Ion sources, systems and methods are disclosed.

5. 发明申请

US20070194251A1 Ion sources, systems and methods 有权
公开(公告)号：US20070194251A1
公开(公告)日：2007-08-23
申请号：US11600361
申请日：2006-11-15
申请人： Billy Ward , John Notte , Louis Farkas , Randall Percival , Raymond Hill , Klaus Edinger , Lars Markwort , Dirk Aderhold , Ulrich Mantz
发明人： Billy Ward , John Notte , Louis Farkas , Randall Percival , Raymond Hill , Klaus Edinger , Lars Markwort , Dirk Aderhold , Ulrich Mantz
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , B82Y10/00 , B82Y40/00 , H01J27/26 , H01J37/20 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J37/3174 , H01J2237/0807 , H01J2237/202 , H01J2237/20228 , H01J2237/2566 , H01J2237/2623 , H01J2237/2812 , H01J2237/30438 , H01J2237/3174 , H01J2237/31755
摘要： Ion sources, systems and methods are disclosed.

6. 发明申请

US20150213997A1 ION SOURCES, SYSTEMS AND METHODS 有权
公开(公告)号：US20150213997A1
公开(公告)日：2015-07-30
申请号：US14684607
申请日：2015-04-13
申请人： Carl Zeiss Microscopy, LLC
发明人： Billy W. Ward , John A. Notte, IV , Louis S. Farkas, III , Randall G. Percival , Raymond Hill , Klaus Edinger , Lars Markwort , Dirk Aderhold , Ulrich Mantz
IPC分类号： H01J37/08 , H01J37/304 , H01J37/305 , H01J37/256 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J27/26 , H01J37/08 , H01J37/20 , H01J37/252 , H01J37/256 , H01J37/28 , H01J37/304 , H01J37/3053 , H01J37/3056 , H01J2237/08 , H01J2237/0807 , H01J2237/202 , H01J2237/20228 , H01J2237/2566 , H01J2237/2623 , H01J2237/2812 , H01J2237/30438 , H01J2237/31701 , H01J2237/3174 , H01J2237/3175 , H01J2237/31755
摘要： Ion sources, systems and methods are disclosed.

7. 发明申请

US20140077684A1 PARTICLE SOURCES AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：颗粒源及其制造方法
公开(公告)号：US20140077684A1
公开(公告)日：2014-03-20
申请号：US13512396
申请日：2012-05-04
申请人： Huarong Liu , Ping Chen
发明人： Huarong Liu , Ping Chen
IPC分类号： H01J37/04 , H01J9/02
CPC分类号： H01J37/04 , B82Y40/00 , H01J9/02 , H01J9/025 , H01J27/26 , H01J37/073 , H01J37/08 , H01J2237/06341 , H01J2237/0807 , H01J2237/2623 , H01L21/31116
摘要： The present disclosure provides a method for manufacturing a particle source comprising: placing a metal wire in vacuum, introducing active gas, adjusting a temperature of the metal wire and applying a positive high voltage V to the metal wire to generate at a side of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than a field evaporation electric field of material for the metal wire, so that metal atoms at the top of the metal wire are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.
摘要翻译：本公开提供了一种制造颗粒源的方法，包括：将金属丝放置在真空中，引入活性气体，调节金属丝的温度并向金属丝施加正高电压V以在头的一侧产生的金属线，其中执行场诱导化学蚀刻（FICE）的蚀刻区域; 通过FICE增加金属线头顶部的表面电场比金属线材料的场蒸发电场大，金属线顶部的金属原子被蒸发掉; 在通过FICE激活场蒸发之后，引起FICE和场蒸发之间的相互调节，直到金属丝的头部具有基部和底部的尖端的组合的形状; 并且当金属丝的头部具有预定形状时，停止FICE和场蒸发。

8. 发明授权

US07554097B2 Ion sources, systems and methods 有权
公开(公告)号：US07554097B2
公开(公告)日：2009-06-30
申请号：US11599915
申请日：2006-11-15
申请人： Billy W. Ward , John A. Notte, IV , Louis S. Farkas, III , Randall G. Percival , Raymond Hill
发明人： Billy W. Ward , John A. Notte, IV , Louis S. Farkas, III , Randall G. Percival , Raymond Hill
IPC分类号： H01J49/10 , H01J27/02 , H01J27/26
CPC分类号： H01J37/08 , B82Y10/00 , B82Y40/00 , H01J27/26 , H01J37/20 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J37/3174 , H01J49/142 , H01J2237/0807 , H01J2237/202 , H01J2237/20228 , H01J2237/2566 , H01J2237/2623 , H01J2237/2812 , H01J2237/30438 , H01J2237/3174 , H01J2237/31755
摘要： Ion sources, systems and methods are disclosed.

9. 发明授权

US07488952B2 Ion sources, systems and methods 有权
公开(公告)号：US07488952B2
公开(公告)日：2009-02-10
申请号：US11600535
申请日：2006-11-15
申请人： Billy W. Ward , John A. Notte, IV , Louis S. Farkas, III , Randall G. Percival , Raymond Hill , Lars Markwort , Dirk Aderhold
发明人： Billy W. Ward , John A. Notte, IV , Louis S. Farkas, III , Randall G. Percival , Raymond Hill , Lars Markwort , Dirk Aderhold
IPC分类号： H01J27/26 , H01J27/02 , H01J49/10
CPC分类号： H01J37/08 , B82Y10/00 , B82Y40/00 , H01J27/26 , H01J37/20 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J37/3174 , H01J2237/0807 , H01J2237/202 , H01J2237/20228 , H01J2237/2566 , H01J2237/2623 , H01J2237/2812 , H01J2237/30438 , H01J2237/3174 , H01J2237/31755
摘要： Ion sources, systems and methods are disclosed.

10. 发明授权

US07431856B2 Nano-tip fabrication by spatially controlled etching 有权
标题翻译：通过空间控制蚀刻的纳米尖端制造
公开(公告)号：US07431856B2
公开(公告)日：2008-10-07
申请号：US11383909
申请日：2006-05-17
申请人： Mohamed Rezeq , Jason Pitters , Robert Wolkow
发明人： Mohamed Rezeq , Jason Pitters , Robert Wolkow
IPC分类号： B44C1/22
CPC分类号： G01Q70/16 , H01J1/3044 , H01J9/025 , H01J2237/2623
摘要： A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.
摘要翻译：制造纳米尖端的方法包括将具有顶点和柄的前体纳米尖端放置在真空室中; 任选地将电场施加到所述前体纳米尖端以除去氧化物和其它污染物质; 随后通过蚀刻剂气体优先吸附在柄上，将真空室中的蚀刻剂气体允许进行现场辅助蚀刻; 并且随着蚀刻进行，逐渐减小所施加的电场以限制蚀刻剂气体对柄的吸附。

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