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    • 9. 发明授权
    • Method and device for measuring permittivity and/or permeability
    • 测量介电常数和/或渗透率的方法和装置
    • US08994386B2
    • 2015-03-31
    • US13256294
    • 2010-03-02
    • Ludovic FourneaudLaurent Dussopt
    • Ludovic FourneaudLaurent Dussopt
    • G01R27/26G01N22/00
    • G01R27/2617G01N22/00
    • The invention relates to a method for measuring the permittivity and/or perviousness of a sample of a nonconductive material, said method comprising: a) measuring a value representative of an admittance Ytestco, b) measuring a value representative of an admittance Ytestcc only from the amplitude and the phase of the electromagnetic waves reflected onto an interface between the sample and the end of a second waveguide having at least one conductive web separated from a conductive sheath by a layer of dielectric material, said second waveguide also including a short circuit between the central web and the sheath at the interface with the sample, and c) calculating the permittivity of the sample from the values representative of the admittances Ytestco and Ytestcc and/or calculating the perviousness of the sample from the values representative of the admittances Ytestco and Ytestcc.
    • 本发明涉及一种用于测量非导电材料的样品的介电常数和/或渗透性的方法,所述方法包括:a)测量代表导纳Ytestco的值,b)仅测量代表导纳Ytestcc的值, 振幅和反射到样品与第二波导的端部之间的界面上的电磁波的相位,该第二波导具有通过介电材料层与导电护套分开的至少一个导电网,所述第二波导还包括在 中心网和与样品接口的护套,以及c)从代表导体Ytestco和Ytestcc的值中计算样品的介电常数和/或从代表导体的测试值Ytestco和Ytestcc计算样品的透视度 。
    • 10. 发明授权
    • Measuring apparatus and method for measuring a surface capacitance of an insulating film
    • 用于测量绝缘膜的表面电容的测量装置和方法
    • US07812621B2
    • 2010-10-12
    • US12664840
    • 2008-07-31
    • Katsunori MakiharaSeiichi MiyazakiSeiichiro Higashi
    • Katsunori MakiharaSeiichi MiyazakiSeiichiro Higashi
    • G01R27/26G01R31/26
    • G01R27/2617H01L22/14H01L2924/0002H01L2924/00
    • A measuring unit applies a dc voltage causing an inversion layer to be formed on an interface between a semiconductor substrate and an insulating film to the semiconductor substrate while changing a change speed of a level of the dc voltage, and measures a current flowing through the insulating film. An arithmetic unit obtains a straight line showing a relationship between the current flowing through the insulating film and the change speed of the dc voltage on the basis of a relationship between the current measured by the measuring unit and the dc voltage, and calculates a slope of the obtained straight line as surface capacitance of the insulating film. The arithmetic unit calculates permittivity of the insulating film on the basis of the calculated surface capacitance, an area of contact between a probe and the insulating film and a thickness of the insulating film.
    • 测量单元在改变直流电压电平的变化速度的同时,向半导体衬底施加导致形成在半导体衬底和绝缘膜之间的界面上的反型层的直流电压,并测量流过绝缘体的电流 电影。 算术单元根据由测量单元测得的电流和直流电压之间的关系,获得表示流过绝缘膜的电流与直流电压的变化速度之间的关系的直线,并且计算斜率 所获得的直线作为绝缘膜的表面电容。 算术单元根据计算出的表面电容,探针和绝缘膜之间的接触面积和绝缘膜的厚度来计算绝缘膜的介电常数。